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1. 发明授权

US06320213B1 Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same 失效
标题翻译：贵金属电极和金属化层之间的扩散障碍，以及包含该扩散阻挡层的集成电路和半导体器件
公开(公告)号：US06320213B1
公开(公告)日：2001-11-20
申请号：US08994089
申请日：1997-12-19
申请人： Peter S. Kirlin , Scott R. Summerfelt , Paul McIntryre
发明人： Peter S. Kirlin , Scott R. Summerfelt , Paul McIntryre
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L28/55
摘要： A dynamic random access memory device (100) includes storage capacitors using a high dielectric constant material, such as, BaSrTiO3, SrBi2Ta2O9 and PbZrTiO3, for the capacitors' insulator. The device includes a conductive plug (106) formed over and connecting with a semiconductor substrate (102). A buffer layer (107) of titanium silicide lays over the plug, and this layer serves to trap “dangling” bonds and to passivate the underlying surface. A first diffusion barrier layer (108), e.g., titanium aluminum nitride, covers the titanium silicide. A capacitor first electrode (110) lays over the diffusion barrier layer. The high dielectric constant material (112) is laid over the capacitor first electrode. A capacitor second electrode (116) is laid over the high dielectric constant material. A second diffusion barrier layer (120) is deposited on the capacitor second electrode. A conductor, such as aluminum (130), is laid over the second diffusion barrier layer. An isolation dielectric (132) can be deposited over the conductor at a high temperature without causing oxygen or metallic diffusion through the first and second diffusion barrier layers.
摘要翻译：动态随机存取存储器件（100）包括用于电容器绝缘体的诸如BaSrTiO3，SrBi2Ta2O9和PbZrTiO3的高介电常数材料的存储电容器。该器件包括形成在半导体衬底（102）上并与其连接的导电插塞（106）。硅化钛缓冲层（107）位于塞子上，该层用于捕获“悬挂”键并钝化下面的表面。第一扩散阻挡层（108），例如氮化铝钛覆盖硅化钛。电容器第一电极（110）覆盖在扩散阻挡层上。高介电常数材料（112）放置在电容器第一电极上。电容器第二电极（116）放置在高介电常数材料上。第二扩散阻挡层（120）沉积在电容器第二电极上。诸如铝（130）的导体被放置在第二扩散阻挡层上。绝缘电介质（132）可以在高温下沉积在导体上，而不会引起氧或金属扩散通过第一和第二扩散阻挡层。

2. 发明授权

US6126996A Metal complex source reagents for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的金属复合源试剂
公开(公告)号：US6126996A
公开(公告)日：2000-10-03
申请号：US990943
申请日：1997-12-15
申请人： Peter S. Kirlin , Duncan W. Brown , Thomas W. Baum , Brian A. Vaarstra , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Thomas W. Baum , Brian A. Vaarstra , Robin A. Gardiner
IPC分类号： H01L21/31 , C07F1/08 , C07F3/00 , C07F3/04 , C07F5/00 , C07F7/00 , C07F7/28 , C07F9/00 , C07F11/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C23C16/18 , C07F19/005 , C07F3/003 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAY with X;y is an integer having a value of 2, 3 or 4;each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：下式的金属有机络合物：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许MAY与X的络合; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Th，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，Pd，Pt ，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

3. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

4. 发明授权

US5711816A Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same 失效
标题翻译：源试剂液体输送装置和包含该源试剂液体输送装置的化学气相沉积系统
公开(公告)号：US5711816A
公开(公告)日：1998-01-27
申请号：US484025
申请日：1995-06-07
申请人： Peter S. Kirlin , Robin L. Binder , Robin A. Gardiner , Peter Van Buskirk , Gregory Stauf , Jiming Zhang
发明人： Peter S. Kirlin , Robin L. Binder , Robin A. Gardiner , Peter Van Buskirk , Gregory Stauf , Jiming Zhang
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , H01L39/24 , C23C16/00
CPC分类号： C23C16/4483 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , H01L39/2441 , Y10S261/65
摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.
摘要翻译：一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。载气可以流过闪蒸基质结构以产生含有闪蒸的源试剂的载气混合物。基体结构优选具有高的表面体积比，并且可以适当地包括诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型，以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

5. 发明授权

US08299286B2 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US08299286B2
公开(公告)日：2012-10-30
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Connie L. Gordon, legal representative , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
发明人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
IPC分类号： C07F7/00 , C23C18/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
摘要翻译：提供了一种二酮醇盐金属化合物和一种源试剂组合物。所述二烷基醇盐金属化合物可以包括选自Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd，Cr，W ，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi，Lu，Th ，Pd，Pt，Ga，In，Au，Ag，Li，Na，K，Rb，Cs，Mo和Yb。该金属可以与至少一种醇盐配体和一种β-二酮配体络合。

6. 发明授权

US06846424B2 Plasma-assisted dry etching of noble metal-based materials 有权
标题翻译：贵金属材料等离子体辅助干法蚀刻
公开(公告)号：US06846424B2
公开(公告)日：2005-01-25
申请号：US09874102
申请日：2001-06-05
申请人： Thomas H. Baum , Phillip Chen , Frank DiMeo, Jr. , Peter C. Van Buskirk , Peter S. Kirlin
发明人： Thomas H. Baum , Phillip Chen , Frank DiMeo, Jr. , Peter C. Van Buskirk , Peter S. Kirlin
IPC分类号： C07F15/00 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , H01L21/02 , H01L21/3213 , H01L21/00
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/32136 , H01L28/55
摘要： A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
摘要翻译：用于去除和/或干蚀刻贵金属基材料结构的方法，例如用于微电子器件的电极形成的铱。通过涉及一种或多种卤化有机和/或无机物质的激发的等离子体生成来提供蚀刻物质，并且在蚀刻条件下，包括这种蚀刻物质的蚀刻剂介质和氧化气体与贵金属基材料接触。等离子体形成和等离子体与贵金属基材料的接触可以在下游微波处理系统中进行，以提供适合于高贵率制造贵金属形成电极的微电子器件和前体结构的处理，或其他导电元件或产品制品的特征。

7. 发明授权

US6162712A Platinum source compositions for chemical vapor deposition of platinum 失效
标题翻译：用于铂化学气相沉积的铂源组合物
公开(公告)号：US6162712A
公开(公告)日：2000-12-19
申请号：US008705
申请日：1998-01-16
申请人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
发明人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
IPC分类号： C07C49/12 , C07C49/167 , C07C49/92 , C07F15/00 , C07F17/02 , C23C14/26 , C23C16/18 , G06F12/00 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/44
CPC分类号： C23C16/18 , C07C49/92 , C07F17/02 , H01L28/65
摘要： A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
摘要翻译：一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中：R选自由氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基组成的组; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丁基，叔丁基 - 丁基，三氟甲基，全氟乙基和全氟正丙基，和（ⅱ）其溶剂介质。本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上在CVD反应器中。

8. 发明授权

US6132492A Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same 失效
标题翻译：用于分配高纯度气体的基于吸附剂的气体储存和输送系统，以及利用其制造半导体器件，产品和前体结构的装置和工艺
公开(公告)号：US6132492A
公开(公告)日：2000-10-17
申请号：US82596
申请日：1998-05-21
申请人： Steven J. Hultquist , Glenn M. Tom , Peter S. Kirlin , James V. McManus
发明人： Steven J. Hultquist , Glenn M. Tom , Peter S. Kirlin , James V. McManus
IPC分类号： B01D53/04 , B01D53/22 , B01D53/34 , F17C11/00
CPC分类号： B01D53/0446 , B01D53/229 , B01D53/34 , F17C11/00 , B01D2253/102 , B01D2253/104 , B01D2253/108 , B01D2253/202 , B01D2256/26 , B01D2258/0216 , B01D2259/4525 , F17C2223/0123 , F17C2270/0518 , H01J2237/006 , H01J2237/31701 , Y10S95/901 , Y10S95/902
摘要： A sorbent-based gas storage and dispensing system, including a storage and dispensing vessel containing a solid-phase physical sorbent medium having a sorbate gas physically adsorbed thereon. A chemisorbent material is provided in the vessel to chemisorb the impurities for gas phase removal thereof in the storage and dispensing vessel. Desorbed sorbate gas is discharged from the storage and dispensing vessel by a dispensing assembly coupled to the vessel. The chemisorbent may be provided in a capsule including an impurity-permeable, but sorbate gas-impermeable membrane, and installed in the vessel at the time of sorbent material loading. Semiconductor manufacturing processes and products manufactured by such processes are described.
摘要翻译：一种基于吸附剂的气体储存和分配系统，包括储存和分配容器，其含有物理吸附在其上的山梨酸气体的固相物理吸附剂介质。在容器中提供化学吸附剂材料以化学吸附杂质，以便在储存和分配容器中气相除去。解吸的山梨酸气体通过联接到容器的分配组件从储存和分配容器排出。化学吸附剂可以设置在胶囊中，包括杂质可渗透但不吸水气体的不透气膜，并且在吸附剂材料装载时安装在容器中。描述了通过这些工艺制造的半导体制造工艺和产品。

9. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

10. 发明授权

US5783716A Platinum source compositions for chemical vapor deposition of platinum 失效
标题翻译：用于铂化学气相沉积的铂源组合物
公开(公告)号：US5783716A
公开(公告)日：1998-07-21
申请号：US673372
申请日：1996-06-28
申请人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
发明人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
IPC分类号： C07C49/12 , C07C49/167 , C07C49/92 , C07F15/00 , C07F17/02 , C23C14/26 , C23C16/18 , G06F12/00 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： C23C16/18 , C07C49/92 , C07F17/02 , H01L28/65
摘要： A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
摘要翻译：一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中： R选自氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丙基，丁基，叔丁基，三氟甲基，全氟乙基和全氟正丙基，和（ii）其溶剂介质。本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上在CVD反应器中。

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