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1. 发明授权

US06713358B1 Method for making a semiconductor device having a high-k gate dielectric 有权
标题翻译：制造具有高k栅极电介质的半导体器件的方法
公开(公告)号：US06713358B1
公开(公告)日：2004-03-30
申请号：US10288043
申请日：2002-11-05
申请人： Robert S. Chau , Timothy E. Glassman , Christopher G. Parker , Matthew V. Metz , Lawrence J. Foley , Reza Arghavani , Douglas W. Barlage
发明人： Robert S. Chau , Timothy E. Glassman , Christopher G. Parker , Matthew V. Metz , Lawrence J. Foley , Reza Arghavani , Douglas W. Barlage
IPC分类号： H01L21336
CPC分类号： H01L21/28194 , H01L21/28167 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After forming a silicon nitride layer on the high-k gate dielectric layer, a gate electrode is formed on the silicon nitride layer.
摘要翻译：描述制造半导体器件的方法。该方法包括在衬底上形成高k栅介质层。在高k栅极电介质层上形成氮化硅层之后，在氮化硅层上形成栅电极。

2. 发明授权

US06689675B1 Method for making a semiconductor device having a high-k gate dielectric 有权
标题翻译：制造具有高k栅极电介质的半导体器件的方法
公开(公告)号：US06689675B1
公开(公告)日：2004-02-10
申请号：US10285915
申请日：2002-10-31
申请人： Christopher G. Parker , Markus Kuhn , Ying Zhou
发明人： Christopher G. Parker , Markus Kuhn , Ying Zhou
IPC分类号： H01L213205
CPC分类号： H01L21/28194 , H01L29/517
摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
摘要翻译：描述制造半导体器件的方法。该方法包括在衬底上形成高k栅极电介质层，氧化高k栅极电介质层的表面，然后在氧化的高k栅极电介质层上形成栅电极。

3. 发明授权

US09081633B2 Remote application connection sharing 有权
标题翻译：远程应用连接共享
公开(公告)号：US09081633B2
公开(公告)日：2015-07-14
申请号：US12785613
申请日：2010-05-24
申请人： Stephen R. Gordon , Christopher G. Parker , Terry Malcolm Lentz, Jr. , John M. VanderKolk
发明人： Stephen R. Gordon , Christopher G. Parker , Terry Malcolm Lentz, Jr. , John M. VanderKolk
IPC分类号： G06F15/16 , G06F9/54 , G06F17/30
CPC分类号： H04L67/125 , G06F9/544 , G06F17/30873 , H04L51/046 , H04L67/02 , H04L67/40
摘要： One or more techniques and/or systems are disclosed for sharing a connection to a remote-based application running on a server. A plurality of client-side browser instantiations can be associated with the remote-based application, such as by running instantiations of the remote application locally on respective client machines. The client-side browser instantiations are able to write to and read from a local global storage regarding the remote-based application, and are notified of a state change to the local global storage, without polling. A first browser instantiation registers as a primary instantiation with the local global storage, and connects to the server for the remote-based application. One or more second browser instantiations registered with the local global storage, along with the primary browser instantiation, can send and receive updates for the remote-based application through the primary browser instantiation, utilizing state change notifications.
摘要翻译：公开了一种或多种技术和/或系统，用于共享与在服务器上运行的基于远程的应用的连接。多个客户端浏览器实例可以与基于远程的应用相关联，例如通过在相应的客户机上本地运行远程应用的实例化。客户端浏览器实例能够从本地全局存储器写入和读取有关基于远程的应用程序，并通知状态更改到本地全局存储，而无需轮询。第一个浏览器实例化将作为本地全局存储的主要实例注册，并连接到基于远程应用程序的服务器。使用本地全局存储器注册的一个或多个第二个浏览器实例化以及主要的浏览器实例可以通过主要的浏览器实例发送和接收基于远程应用程序的更新，利用状态改变通知。

4. 发明申请

US20110289191A1 REMOTE APPLICATION CONNECTION SHARING 有权
标题翻译：远程应用连接共享
公开(公告)号：US20110289191A1
公开(公告)日：2011-11-24
申请号：US12785613
申请日：2010-05-24
申请人： Stephen R. Gordon , Christopher G. Parker , Terry Malcolm Lentz, JR. , John M. VanderKolk
发明人： Stephen R. Gordon , Christopher G. Parker , Terry Malcolm Lentz, JR. , John M. VanderKolk
IPC分类号： G06F15/16 , G06F3/01 , G06F15/173
CPC分类号： H04L67/125 , G06F9/544 , G06F17/30873 , H04L51/046 , H04L67/02 , H04L67/40
摘要： One or more techniques and/or systems are disclosed for sharing a connection to a remote-based application running on a server. A plurality of client-side browser instantiations can be associated with the remote-based application, such as by running instantiations of the remote application locally on respective client machines. The client-side browser instantiations are able to write to and read from a local global storage regarding the remote-based application, and are notified of a state change to the local global storage, without polling. A first browser instantiation registers as a primary instantiation with the local global storage, and connects to the server for the remote-based application. One or more second browser instantiations registered with the local global storage, along with the primary browser instantiation, can send and receive updates for the remote-based application through the primary browser instantiation, utilizing state change notifications.
摘要翻译：公开了一种或多种技术和/或系统，用于共享与在服务器上运行的基于远程的应用的连接。多个客户端浏览器实例可以与基于远程的应用相关联，例如通过在相应的客户机上本地运行远程应用的实例化。客户端浏览器实例能够从本地全局存储器写入和读取有关基于远程的应用程序，并通知状态更改到本地全局存储，而无需轮询。第一个浏览器实例化将作为本地全局存储的主要实例注册，并连接到基于远程应用程序的服务器。使用本地全局存储器注册的一个或多个第二个浏览器实例，以及主要的浏览器实例，可以通过主要的浏览器实例发送和接收基于远程应用程序的更新，利用状态改变通知。

5. 发明申请

US20070288889A1 Source Code Commenting Via Speech Recording and Recognition 审中-公开
标题翻译：源代码通过语音记录和识别进行评论
公开(公告)号：US20070288889A1
公开(公告)日：2007-12-13
申请号：US11422898
申请日：2006-06-08
申请人： Christopher Harrison , Meng Mao , Christopher G. Parker
发明人： Christopher Harrison , Meng Mao , Christopher G. Parker
IPC分类号： G06F9/44
CPC分类号： G06F8/73 , G10L15/26
摘要： A computer programmer can verbally add comments to source code by making verbal utterances into a microphone. These utterances are detected and recorded with an audio recording program. The recorded utterances are converted to text which also contain references to the audio data. The programmer indicates relevant source code positions by using key phrases in the utterances or by cursor position. The text and links to the audio recording are then inserted into relevant source code positions as comments.
摘要翻译：计算机程序员可以通过将口头发音写入麦克风来口头地向源代码添加注释。用音频记录程序检测和记录这些话语。录制的话语被转换为还包含对音频数据的引用的文本。程序员通过在话语中或通过光标位置使用关键短语来指示相关的源代码位置。然后将文本和音频录制的链接作为注释插入相关的源代码位置。

6. 发明授权

US06787440B2 Method for making a semiconductor device having an ultra-thin high-k gate dielectric 有权
公开(公告)号：US06787440B2
公开(公告)日：2004-09-07
申请号：US10315268
申请日：2002-12-10
申请人： Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
发明人： Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
IPC分类号： H01L214763
CPC分类号： H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.

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