专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09263252B2 Method of protecting an interlayer dielectric layer and structure formed thereby 有权
标题翻译：保护层间电介质层的方法和由此形成的结构
公开(公告)号：US09263252B2
公开(公告)日：2016-02-16
申请号：US13735949
申请日：2013-01-07
申请人： Chun-Wei Chang , Yi-An Lin , Neng-Kuo Chen , Sey-Ping Sun , Clement Hsingjen Wann , Yu-Lien Huang
发明人： Chun-Wei Chang , Yi-An Lin , Neng-Kuo Chen , Sey-Ping Sun , Clement Hsingjen Wann , Yu-Lien Huang
IPC分类号： H01L29/78 , H01L21/336 , H01L21/02 , H01L29/66
CPC分类号： H01L21/022 , H01L29/66545
摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.
摘要翻译：该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。该方法还包括形成保护层以填充空腔。该方法还包括平坦化保护层。平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

2. 发明授权

US09589803B2 Gate electrode of field effect transistor 有权
标题翻译：场效应晶体管的栅电极
公开(公告)号：US09589803B2
公开(公告)日：2017-03-07
申请号：US13572494
申请日：2012-08-10
申请人： Neng-Kuo Chen , Clement Hsingjen Wann , Yi-An Lin , Chun-Wei Chang , Sey-Ping Sun
发明人： Neng-Kuo Chen , Clement Hsingjen Wann , Yi-An Lin , Chun-Wei Chang , Sey-Ping Sun
IPC分类号： H01L29/94 , H01L21/28 , H01L21/3105 , H01L29/66 , H01L21/8238 , H01L29/78 , H01L29/165
CPC分类号： H01L29/66545 , H01L21/28123 , H01L21/31053 , H01L21/3212 , H01L21/32134 , H01L21/32135 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L29/165 , H01L29/6653 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： This description relates to a gate electrode of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate electrode over the substrate including a first top surface and a sidewall; a source/drain (S/D) region at least partially disposed in the substrate on one side of the gate electrode; a spacer on the sidewall distributed between the gate electrode and the S/D region; and a contact etch stop layer (CESL) adjacent to the spacer and further comprising a portion extending over the S/D region, wherein the portion has a second top surface substantially coplanar with the first top surface.
摘要翻译：该描述涉及场效应晶体管的栅电极。场效应晶体管的示例性结构包括：衬底; 位于所述基板上方的包括第一顶表面和侧壁的栅电极; 至少部分地设置在所述栅电极的一侧的所述衬底中的源极/漏极（S / D）区域; 在所述侧壁上的间隔物分布在所述栅电极和所述S / D区之间; 以及与所述间隔物相邻的接触蚀刻停止层（CESL），并且还包括在所述S / D区域上延伸的部分，其中所述部分具有与所述第一顶表面基本上共面的第二顶表面。

3. 发明申请

US20140061738A1 Method to Form a CMOS Image Sensor 有权
标题翻译：形成CMOS图像传感器的方法
公开(公告)号：US20140061738A1
公开(公告)日：2014-03-06
申请号：US13602494
申请日：2012-09-04
申请人： Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
发明人： Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Jiech-Fun Lu , Chun-Wei Chang , Wang-Pen Mo , Jhy-Jyi Sze , Chia-Shiung Tsai
IPC分类号： H01L31/0216
CPC分类号： H01L21/266 , H01L27/14689
摘要： The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.
摘要翻译：本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。三层光致抗蚀剂包括沉积在基底上的旋涂碳层，在旋涂碳层上方形成的含硅的硬掩模层，以及形成在含硅硬质层的硅层之上的光致抗蚀剂层，面具。形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模，然后转移到旋涂碳上，并且限定要选择性地注入离子的衬底区域。

4. 发明申请

US20130027877A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20130027877A1
公开(公告)日：2013-01-31
申请号：US13553831
申请日：2012-07-20
申请人： Ching-Fu Yang , Hui-Lian Chang , Ming-Wang Lin , Chun-Wei Chang
发明人： Ching-Fu Yang , Hui-Lian Chang , Ming-Wang Lin , Chun-Wei Chang
IPC分类号： H05K7/20
CPC分类号： G06F1/203
摘要： An electronic device including a main body, a rotating base, a motherboard and a driving module is provided. The rotating base has a first vent. The rotating base is pivoted to the main body and suitable for being rotated between an operating position and a retracting position. When the rotating base is located at the operating position, the first vent is exposed from the main body, and when the rotating base is located at the retracting position, the first vent is retracted in the main body. The driving module includes a controlling element and a first locking element. The controlling element is disposed on the main body and suitable for moving between an enable position and a disable position. The first locking element is connected to the controlling element, and the controlling element drives the first locking element to position the rotating base.
摘要翻译：提供一种包括主体，旋转底座，母板和驱动模块的电子设备。旋转底座具有第一通气口。旋转底座枢转到主体并且适于在操作位置和缩回位置之间旋转。当旋转底座位于操作位置时，第一排气孔从主体露出，当旋转底座位于缩回位置时，第一排气口缩回主体。驱动模块包括控制元件和第一锁定元件。控制元件设置在主体上并且适于在使能位置和禁用位置之间移动。第一锁定元件连接到控制元件，并且控制元件驱动第一锁定元件以定位旋转底座。

5. 发明申请

US20110248394A1 LEADFRAME PACKAGE FOR HIGH-SPEED DATA RATE APPLICATIONS 有权
标题翻译： LEADFRAME包用于高速数据速率应用
公开(公告)号：US20110248394A1
公开(公告)日：2011-10-13
申请号：US13085446
申请日：2011-04-12
申请人： Nan-Jang Chen , Chun-Wei Chang , Sheng-Ming Chang , Che-Yuan Jao , Ching-Chih Li , Nan-Cheng Chen
发明人： Nan-Jang Chen , Chun-Wei Chang , Sheng-Ming Chang , Che-Yuan Jao , Ching-Chih Li , Nan-Cheng Chen
IPC分类号： H01L23/495
CPC分类号： H01L24/49 , H01L23/49503 , H01L23/49541 , H01L23/49551 , H01L24/48 , H01L2224/05554 , H01L2224/48177 , H01L2224/48247 , H01L2224/49109 , H01L2224/49175 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor package includes a die pad; a semiconductor die mounted on the die pad; a plurality of leads disposed along peripheral edges of the die pad; a ground bar between the leads and the die pad; and a plurality of bridges connecting the ground bar with the die pad, wherein a gap between two adjacent bridges has a length that is equal to or less than 3 mm.
摘要翻译：半导体封装包括管芯焊盘; 安装在管芯焊盘上的半导体管芯; 沿着所述管芯焊盘的周缘设置的多个引线; 引线和芯片焊盘之间的接地棒; 以及将接地棒与管芯焊盘连接的多个桥，其中两个相邻桥之间的间隙具有等于或小于3mm的长度。

6. 发明授权

US07528165B2 Indole compounds 有权
标题翻译：吲哚化合物
公开(公告)号：US07528165B2
公开(公告)日：2009-05-05
申请号：US11195531
申请日：2005-08-01
申请人： Hsing-Pang Hsieh , Jing-Ping Liou , Jang-Yang Chang , Chun-Wei Chang
发明人： Hsing-Pang Hsieh , Jing-Ping Liou , Jang-Yang Chang , Chun-Wei Chang
IPC分类号： A61K31/40
CPC分类号： A61K31/405 , C07D209/08 , C07D209/12 , C07D209/14 , C07D209/30 , C07D401/06 , C07D405/06 , C07D491/04
摘要： This invention relates to methods of inhibiting tubulin polymerization and treating cancer and other angiogenesis-related disorders with indole compounds of the formula: wherein L1, L2, R1, R2, Ra, Rb, Rc, Rd, and Re are defined herein.
摘要翻译：本发明涉及抑制微管蛋白聚合和用下式的吲哚化合物治疗癌症和其它血管发生相关病症的方法：其中L1，L2，R1，R2，Ra，Rb，Rc，Rd和Re在本文中定义。

7. 发明公开

US20240091910A1 VISE QUICK-CHANGE BASE WITH IMPROVED STRUCTURE 审中-公开
公开(公告)号：US20240091910A1
公开(公告)日：2024-03-21
申请号：US17933486
申请日：2022-09-20
申请人： Chun-Wei Chang
发明人： Chun-Wei Chang
IPC分类号： B25B1/24 , B25B1/10
CPC分类号： B25B1/2484 , B25B1/103
摘要： A quick-change vice base with improved structure, which comprises: a base body, a quick-change coupler, a moveable block set and a central bolt, wherein, the bottoms of the first moveable block and second moveable block are respectively locked with a moveable block positioning base, one end of the moveable block positioning base has a pushing block; when the lead screw rotates clockwise, the first moveable block and the second moveable block will move toward the quick-change coupler, so that the curved stopping blocks on the first moveable block and the second moveable block will be fitted into the recesses of the quick-change coupler; when the lead screw rotates anticlockwise, the first movable block and the second movable block will move away from the quick-change coupler and drive the moveable block positioning seat to move simultaneously.

8. 发明授权

US11077531B2 Fixture block composite structure for workpiece positioning 有权
公开(公告)号：US11077531B2
公开(公告)日：2021-08-03
申请号：US16175841
申请日：2018-10-31
申请人： Chun-Wei Chang
发明人： Chun-Wei Chang
IPC分类号： B23Q3/06 , B25B1/02 , B25B1/24 , B25B1/08
摘要： A fixture block composite structure for workpiece positioning comprises a fixture block group composed of at least a stop fixture block and at least a one-sided movable fixture block. The stop fixture block is fixed to a base by a plurality of mountings, and two opposite lateral sides of the stop fixture block in the extending direction of base are provided with a fixed upright positioning plane respectively. The one-sided movable fixture block has a fixed holder, the holder is fixed to the base by a plurality of mountings. The holder is provided with a movable piece which can be driven to reciprocate towards the positioning plane on the stop fixture block. The movable piece is provided with a clamping surface on one side facing the positioning plane.

9. 发明授权

US09028915B2 Method of forming a photoresist layer 有权
标题翻译：形成光致抗蚀剂层的方法
公开(公告)号：US09028915B2
公开(公告)日：2015-05-12
申请号：US13602465
申请日：2012-09-04
申请人： Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
发明人： Chun-Wei Chang , Chih-Chien Wang , Wang-Pen Mo , Hung-Chang Hsieh
IPC分类号： B05D3/12 , H01L21/67 , G03F7/16
CPC分类号： H01L21/02282 , B05D1/005 , G03F7/091 , G03F7/162 , H01L21/0271 , H01L21/0276 , H01L21/6715
摘要： A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
摘要翻译：公开了一种在半导体器件上形成光致抗蚀剂层的方法。示例性的包括提供晶片。该方法还包括在第一次循环期间以第一速度旋转晶片，同时将预湿材料分配在晶片上并以第二速度在第一周期期间旋转晶片，同时预湿材料继续被分配在晶圆上。该方法还包括在第一速度的第二循环期间旋转晶片，同时预湿材料继续分配在晶片上，并且在第二次循环期间以第二速度旋转晶片，同时预湿材料继续分配在晶片上。该方法还包括以三速旋转晶片，同时将光致抗蚀剂材料分配在包括预湿材料的晶片上。

10. 发明授权

US08839002B2 Optical media recording device for protecting device keys and related method 有权
标题翻译：用于保护设备密钥的光媒体记录设备及相关方法
公开(公告)号：US08839002B2
公开(公告)日：2014-09-16
申请号：US12107773
申请日：2008-04-23
申请人： Chun-Wei Chang
发明人： Chun-Wei Chang
IPC分类号： G06F12/14 , G06F21/72 , H04L9/00
CPC分类号： G06F12/14 , G06F21/10 , G06F21/72 , G11B20/00086 , G11B20/0021 , G11B20/00224 , G11B20/00246 , G11B20/00427 , G11B2220/215 , G11B2220/2541 , G11B2220/2579 , H04L9/00 , H04N7/1675 , H04N21/42692 , H04N21/4334 , H04N21/4408 , H04N21/63345
摘要： To protect device keys, an optical media recording device capable of performing AACS encryption on data does not have any device keys, and the optical media recording device performs AACS encryption by activating recording software stored in a memory the optical media recording device, and utilizing a pre-calculated media key stored in the memory of the optical media recording device to perform AACS encryption on the data.
摘要翻译：为了保护设备密钥，能够对数据执行AACS加密的光学介质记录设备没有任何设备密钥，并且光学介质记录设备通过激活存储在光学介质记录设备的存储器中的记录软件来执行AACS加密，并且利用存储在光学媒体记录装置的存储器中的预先计算的媒体密钥，以对该数据执行AACS加密。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式