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    • 1. 发明专利
    • Method of manufacturing organic semiconductor thin film
    • 制造有机半导体薄膜的方法
    • JP2012043926A
    • 2012-03-01
    • JP2010182945
    • 2010-08-18
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • HASEGAWA TATSUOMINEMAWARI HIROMIYAMADA JUICHIMATSUI HIROYUKI
    • H01L21/368C09D11/00H01L29/786H01L51/05H01L51/40
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic semiconductor thin film which is homogeneous in the film quality and film thickness and then homogeneous with extremely less pin hole including a peripheral edge part in a certain decided area when the organic semiconductor thin film comprising single-component organic molecules is manufactured by a printing method.SOLUTION: The method of manufacturing the organic semiconductor thin film includes: a step of preparing a first ink obtained by dissolving an organic semiconductor into an organic solvent having high affinity at a high concentration for the organic semiconductor and a second ink comprising the organic solvent having low affinity for the organic semiconductor; and a step of discharging the first and second inks simultaneously or alternately from each ink head and mixing them on a substrate.
    • 要解决的问题:提供一种制造有机半导体薄膜的方法,该有机半导体薄膜在膜质量和膜厚度方面是均匀的,然后在具有特定决定区域的包括周边边缘部分的极少的针孔时均匀,当有机 通过印刷法制造包含单组分有机分子的半导体薄膜。 解决方案:制造有机半导体薄膜的方法包括:制备通过将有机半导体溶解在有机半导体的高浓度的高亲和力的有机溶剂中而获得的第一油墨的步骤和包含有机半导体的第二油墨的步骤 对有机半导体具有低亲和力的有机溶剂; 以及从每个墨头同时或交替地排出第一和第二墨水并将它们混合在基底上的步骤。 版权所有(C)2012,JPO&INPIT
    • 3. 发明专利
    • Evaluation method of organic thin film transistor
    • 有机薄膜晶体管的评估方法
    • JP2013004637A
    • 2013-01-07
    • JP2011132799
    • 2011-06-15
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所Fuji Electric Co Ltd富士電機株式会社
    • HASEGAWA TATSUOMATSUI HIROYUKITSUTSUMI JUNYAYAMADA JUICHIKANAI NAOYUKI
    • H01L21/336H01L29/786H01L51/05
    • PROBLEM TO BE SOLVED: To provide an evaluation method of an organic thin film transistor capable of observing the microscopic aspect of the electrical charge state in the channel region of an organic thin film transistor, and capable of capturing a change in electrical charge density due to a defect such as charge trap.SOLUTION: In the evaluation method of an organic thin film transistor having a gate electrode, a source electrode, a drain electrode, a gate insulating film layer, and an organic semiconductor layer, and in which the electrical charge state in a channel region defined by the electrodes is controlled by a voltage applied via the electrodes, a modulation voltage oscillating with time by a rectangular wave or a sine wave is applied via the electrodes, the channel region is irradiated with laser light and the transmitted light thereof is obtained, the intensity of transmitted light (T) when the modulation voltage is high, and a value (ΔT) obtained by subtracting the intensity of transmitted light when the modulation voltage is low from the intensity of transmitted light (T) are measured, and then the electrical charge density distribution of the channel region is determined based on these values (T and ΔT).
    • 要解决的问题:为了提供能够观察有机薄膜晶体管的沟道区域中的电荷状态的微观方面并且能够捕获电荷变化的有机薄膜晶体管的评估方法 由于诸如电荷陷阱的缺陷导致的密度。 解决方案:在具有栅电极,源电极,漏电极,栅绝缘膜层和有机半导体层的有机薄膜晶体管的评估方法中,其中沟道中的电荷状态 由电极限定的区域由通过电极施加的电压进行控制,经由电极施加随时间被矩形波或正弦波振荡的调制电压,通过激光照射通道区域并获得透射光 ,调制电压高时的透射光强度(T)和从透射光强度(T)减去调制电压为低时的透射光强度而得到的值(ΔT),然后, 基于这些值(T和ΔT)确定通道区域的电荷密度分布。 版权所有(C)2013,JPO&INPIT