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1. 发明专利

JP2012209370A Three-layer stack type elastomer stamp, organic thin film forming method using the same, and organic device 有权
标题翻译：三层堆叠型弹性体印章，有机薄膜成型方法及其有机装置
公开(公告)号：JP2012209370A
公开(公告)日：2012-10-25
申请号：JP2011072828
申请日：2011-03-29
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： IGAWA MITSUHIRO , YAMADA JUICHI , HASEGAWA TATSUO
IPC分类号： H01L21/368 , B32B27/30 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide an elastomer stamp that is adaptive to a thin film formation process of high productivity and specifications thereof due to diversification of solvents used for ink and addition of a heating mechanism for a printing process using the elastomer stamp such as a μCP method, a contact casting method, etc.SOLUTION: There is provided a three-layer stack type elastomer stamp having a three-layer structure including an intermediate layer comprising fluorine-based elastomer with superior solvent resistance, and an upper layer and a lower layer comprising different elastomer from the intermediate layer, at least one of the upper layer and lower layer being a layer which comes into contact with ink and comprises silicone-based elastomer having a peelable surface.
摘要翻译：要解决的问题：提供一种弹性体印模，其适用于由于用于油墨的溶剂的多样化而具有高生产率和规格的薄膜形成工艺，并且添加使用弹性体印模的印刷方法的加热机构例如μCP法，接触铸造法等。解决方案：提供一种具有三层结构的三层叠层型弹性体印模，其包括具有优异耐溶剂性的含氟基弹性体的中间层，以及上层和下层，其包含与中间层不同的弹性体，上层和下层中的至少一层是与油墨接触的层，并且包含具有可剥离表面的硅氧烷基弹性体。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012054371A Organic thin film semiconductor device and method for manufacturing the same 有权
标题翻译：有机薄膜半导体器件及其制造方法
公开(公告)号：JP2012054371A
公开(公告)日：2012-03-15
申请号：JP2010195270
申请日：2010-09-01
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： YAMADA JUICHI , HASEGAWA TATSUO
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide an organic thin film semiconductor device capable of simplifying a manufacturing process, while simultaneously realizing high mobility, low contact resistance, low threshold voltage and low sub-threshold value, and a method for manufacturing the same.SOLUTION: The organic thin film semiconductor device is a bottom contact type, an electrode end having a tapered slope which is widened from the organic semiconductor side to an insulating layer side, is formed adjacent to at least the insulating layer among sides of the electrode, the rising angle represented by the inclination of slope with respect to a layer direction of the insulating layer of the electrode end, is less than or equal to allowable growth angle θ° of the organic molecule forming the organic semiconductor layer defined by the following formula (1): θ=tan(e/d) (the formula (1)), d represents a thickness of a crystal grain of the organic molecule, e represents a thickness of single layer of the organic molecule.
摘要翻译：解决的问题：提供能够简化制造工艺的同时实现高迁移率，低接触电阻，低阈值电压和低亚阈值的有机薄膜半导体器件及其制造方法。解决方案：有机薄膜半导体器件是底部接触型的，具有从有机半导体侧加宽到绝缘层侧的锥形斜面的电极端形成在至少绝缘层附近电极，相对于电极端的绝缘层的层方向的倾斜倾斜度表示的上升角小于或等于容许生长角θ max 形成由下式（1）定义的有机半导体层的有机分子的角度：θ max = tan - 1 e / d）（式（1）），d表示有机分子的晶粒的厚度，e表示有机分子的单层的厚度。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012043926A Method of manufacturing organic semiconductor thin film 有权
标题翻译：制造有机半导体薄膜的方法
公开(公告)号：JP2012043926A
公开(公告)日：2012-03-01
申请号：JP2010182945
申请日：2010-08-18
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , MINEMAWARI HIROMI , YAMADA JUICHI , MATSUI HIROYUKI
IPC分类号： H01L21/368 , C09D11/00 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic semiconductor thin film which is homogeneous in the film quality and film thickness and then homogeneous with extremely less pin hole including a peripheral edge part in a certain decided area when the organic semiconductor thin film comprising single-component organic molecules is manufactured by a printing method.SOLUTION: The method of manufacturing the organic semiconductor thin film includes: a step of preparing a first ink obtained by dissolving an organic semiconductor into an organic solvent having high affinity at a high concentration for the organic semiconductor and a second ink comprising the organic solvent having low affinity for the organic semiconductor; and a step of discharging the first and second inks simultaneously or alternately from each ink head and mixing them on a substrate.
摘要翻译：要解决的问题：提供一种制造有机半导体薄膜的方法，该有机半导体薄膜在膜质量和膜厚度方面是均匀的，然后在具有特定决定区域的包括周边边缘部分的极少的针孔时均匀，当有机通过印刷法制造包含单组分有机分子的半导体薄膜。解决方案：制造有机半导体薄膜的方法包括：制备通过将有机半导体溶解在有机半导体的高浓度的高亲和力的有机溶剂中而获得的第一油墨的步骤和包含有机半导体的第二油墨的步骤对有机半导体具有低亲和力的有机溶剂; 以及从每个墨头同时或交替地排出第一和第二墨水并将它们混合在基底上的步骤。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2009094420A Method of manufacturing organic semiconductor apparatus and organic semiconductor apparatus 有权
标题翻译：制造有机半导体器件和有机半导体器件的方法
公开(公告)号：JP2009094420A
公开(公告)日：2009-04-30
申请号：JP2007266083
申请日：2007-10-12
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TAKAHASHI YUKIHIRO , HASEGAWA TATSUO , YAMADA JUICHI , TOKURA YOSHINORI
IPC分类号： H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a method of inexpensively manufacturing an organic semiconductor layer and an organic semiconductor apparatus without using vacuum or a solvent. SOLUTION: The method of manufacturing the organic semiconductor apparatus includes a process of preparing organic semiconductor powder and causing a film to attract the powder, a process of piling up the film on a substrate with the surface where the organic semiconductor power is attracted down, and a process of attaining the organic semiconductor layer by pressurizing the substrate from the surface of the film and packing an organic semiconductor powder layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种在不使用真空或溶剂的情况下廉价地制造有机半导体层和有机半导体装置的方法。解决方案：制造有机半导体装置的方法包括制备有机半导体粉末并使膜吸引粉末的方法，在具有有机半导体功率的表面吸附基板上的膜堆积的过程以及通过从膜的表面加压基板并填充有机半导体粉末层来获得有机半导体层的工艺。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2005249461A Isotropic high-pressure applying device for x-ray diffraction analysis 审中-公开
$Isotropic high-pressure applying device for x-ray diffraction analysis$
标题翻译：用于X射线衍射分析的等压高压应用器件
公开(公告)号：JP2005249461A
公开(公告)日：2005-09-15
申请号：JP2004057378
申请日：2004-03-02
申请人： High Energy Accelerator Research Organization , Kyowa Seisakusho:Kk , National Institute Of Advanced Industrial & Technology , 大学共同利用機関法人高エネルギー加速器研究機構 , 株式会社協和製作所 , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , KUMAI REIJI , TAKAHASHI YUKIHIRO , TOKURA YOSHINORI , SAWA HIROSHI , TOYOSHIMA SATOAKI
IPC分类号： G01N23/20 , G21K5/00 , G21K5/02
摘要： PROBLEM TO BE SOLVED: To provide an isotropic high-pressure applying device for X-ray diffraction analysis, capable of applying good controllability of about 1.5 GPa or lower and hydrostatic pressure of high uniformity, by constituting the window part of a clamping type high-pressure cell of beryllium high with strong transmission intensity for the X-rays.
SOLUTION: This clamping type high-pressure applying device is used for analyzing the structure of a substance under isotropic hydrostatic pressure and is equipped with the window part having X-ray transmissivity provided to the sample chamber part, in which the pressure medium and the substance are sealed. The window part is constituted of beryllium, and a seal member molded from a fluoroplastic is mounted inside the window member.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于X射线衍射分析的各向同性的高压施加装置，通过构成夹紧的窗口部分，能够提供约1.5GPa以下的良好的可控性和高均匀性的静水压力铍高压电池高，透射强度高。解决方案：该夹紧型高压施加装置用于分析各向同性流体静压下的物质的结构，并且具有设置在样品室部分的具有X射线透射率的窗口部分，其中压力介质并且物质被密封。窗部由铍构成，由氟塑料成型的密封构件安装在窗构件的内部。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2013004637A Evaluation method of organic thin film transistor 审中-公开
标题翻译：有机薄膜晶体管的评估方法
公开(公告)号：JP2013004637A
公开(公告)日：2013-01-07
申请号：JP2011132799
申请日：2011-06-15
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Fuji Electric Co Ltd , 富士電機株式会社
发明人： HASEGAWA TATSUO , MATSUI HIROYUKI , TSUTSUMI JUNYA , YAMADA JUICHI , KANAI NAOYUKI
IPC分类号： H01L21/336 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide an evaluation method of an organic thin film transistor capable of observing the microscopic aspect of the electrical charge state in the channel region of an organic thin film transistor, and capable of capturing a change in electrical charge density due to a defect such as charge trap.SOLUTION: In the evaluation method of an organic thin film transistor having a gate electrode, a source electrode, a drain electrode, a gate insulating film layer, and an organic semiconductor layer, and in which the electrical charge state in a channel region defined by the electrodes is controlled by a voltage applied via the electrodes, a modulation voltage oscillating with time by a rectangular wave or a sine wave is applied via the electrodes, the channel region is irradiated with laser light and the transmitted light thereof is obtained, the intensity of transmitted light (T) when the modulation voltage is high, and a value (ΔT) obtained by subtracting the intensity of transmitted light when the modulation voltage is low from the intensity of transmitted light (T) are measured, and then the electrical charge density distribution of the channel region is determined based on these values (T and ΔT).
摘要翻译：要解决的问题：为了提供能够观察有机薄膜晶体管的沟道区域中的电荷状态的微观方面并且能够捕获电荷变化的有机薄膜晶体管的评估方法由于诸如电荷陷阱的缺陷导致的密度。解决方案：在具有栅电极，源电极，漏电极，栅绝缘膜层和有机半导体层的有机薄膜晶体管的评估方法中，其中沟道中的电荷状态由电极限定的区域由通过电极施加的电压进行控制，经由电极施加随时间被矩形波或正弦波振荡的调制电压，通过激光照射通道区域并获得透射光，调制电压高时的透射光强度（T）和从透射光强度（T）减去调制电压为低时的透射光强度而得到的值（ΔT），然后，基于这些值（T和ΔT）确定通道区域的电荷密度分布。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2006237271A Organic semiconductor device 有权
标题翻译：有机半导体器件
公开(公告)号：JP2006237271A
公开(公告)日：2006-09-07
申请号：JP2005049759
申请日：2005-02-24
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TAKAHASHI YUKIHIRO , HASEGAWA TATSUO , ABE YASUSHI , TOKURA YOSHINORI
IPC分类号： H01L29/786 , H01L21/28 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To realize an organic semiconductor device which has high performance and is provided with an electrode operating as p-type and an electrode operating n-type in a single organic semiconductor layer.
SOLUTION: The organic semiconductor device is provided with at least two kinds of electrodes 2, 3, 4, and 5 that can efficiently implant electrons and positive holes to an organic semiconductor layer 40, and that are comprised of a conductive charge-transfer complex that is made by the combination of an electron donative material and an electron-accepting molecular material; and that can efficiently implant electrons and another conductive charge-transfer complex that has a different combination of constituent molecular and can efficiently implant positive holes.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了实现具有高性能的有机半导体器件，并且在单个有机半导体层中设置有作为p型工作的电极和n型工作的电极。解决方案：有机半导体器件设置有至少两种电极2,3,4和5，其可以有效地将有机半导体层40的电子和正空穴注入，并且由导电的电荷 - 通过电子供体材料和电子接受分子材料的组合制成的转移络合物; 并且可以有效地注入电子和另一导电电荷转移络合物，其具有不同组成分子的组合并可以有效地注入正孔。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006049578A Organic semiconductor device 审中-公开
标题翻译：有机半导体器件
公开(公告)号：JP2006049578A
公开(公告)日：2006-02-16
申请号：JP2004228575
申请日：2004-08-04
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , TAKAHASHI YUKIHIRO , ABE YASUSHI , TOKURA YOSHINORI
IPC分类号： H01L51/05 , H01L21/28 , H01L21/285 , H01L21/288 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/786 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an electrode for realizing an n-type organic transistor having high mobility and an organic semiconductor device using electrons as carriers and having high performance.
SOLUTION: The problem is solved by the organic semiconductor device. The organic semiconductor device has at least an organic semiconductor layer 40. The organic semiconductor device further has at least electrodes 2 and 3 forming a conductive charge transfer complex, by combining an electron donative molecular material with an electron acceptable molecular material having an ionizing energy the same as or similar to a molecular material constituting an organic semiconductor in the electrodes or parts of the electrodes on the sides brought into contact with the organic semiconductor, for improving the injection efficiency of electrons to the organic semiconductor as the electrodes constituting electrical contacts with the organic semiconductor layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于实现具有高迁移率的n型有机晶体管的电极和使用电子作为载体并具有高性能的有机半导体器件。解决方案：问题由有机半导体器件解决。有机半导体器件至少具有有机半导体层40.有机半导体器件至少具有形成导电电荷转移络合物的电极2和3，通过将给电子分子材料与具有电离能的电子可接受分子材料组合与构成与有机半导体接触的侧面的电极或电极的部分中的构成有机半导体的分子材料相同或类似，为了提高电子与有机半导体的接触的注入效率，因为与有机半导体层。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2014195794A 導電性パターンの形成方法有权
标题翻译：形成导电图案的方法
公开(公告)号：JP2014195794A
公开(公告)日：2014-10-16
申请号：JP2013186922
申请日：2013-09-10
申请人：独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： YAMADA JUICHI , HASEGAWA TATSUO , MATSUOKA AKIRA , KATO AYANO
IPC分类号： B05D5/12 , B05D3/06 , C09D11/00
摘要：【課題】金属ナノ粒子インクを用いて、高精細で高導電性の導電性パターンを形成する方法を提供する。【解決手段】基体上に形成された絶縁膜に対して、紫外線をパターン領域に照射した後、粒子表面が有機分子層で保護された金属ナノ粒子を溶媒中に分散したインクを、前記基体上に塗布することにより、前記パターン領域に前記インクを付着・凝集させ、導電性パターンを得る。塗布は、基体との間隙又は接触部に前記インクが保持される塗布部材によることが好ましく、ブレード塗布やロール塗布などが好ましい。【選択図】図1
摘要翻译：要解决的问题：提供一种通过使用金属纳米颗粒油墨形成具有高清晰度和高导电性的导电图案的方法。溶液：通过涂覆其中颗粒表面被有机分子层保护的金属纳米颗粒分散在溶剂中的油墨在用紫外线照射形成在基板上的绝缘膜的图案区域之后，在基板上，并且在图案区域上粘附并聚集墨以获得导电图案。优选通过将墨水保持在构件和基板之间的间隙或接触部分中的涂布构件进行涂布，并且优选刮涂，辊涂等。

10. 发明专利

JP2007305807A Manufacturing method for organic semiconductor device 有权
标题翻译：有机半导体器件的制造方法
公开(公告)号：JP2007305807A
公开(公告)日：2007-11-22
申请号：JP2006133068
申请日：2006-05-11
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , HIRAOKA MAKI , YAMADA JUICHI , TOKURA YOSHINORI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To make possible the creation of an electrode used for organic semiconductor devices by the solution process of an organic metal thin film, even though there are used conductive charge transferring complex materials whose solutions are formed hardly due to their generally low solubilities in solvents.
SOLUTION: A manufacturing method for organic semiconductor devices includes a process for forming an organic semiconductor layer, and a process for forming a conductive charge transferring complex electrode on a portion of the organic semiconductor layer. In the formation of the conductive charge transferring complex electrode, electron donating molecules and electron accepting molecules are solved respectively in different organic solvents from each other to obtain two kinds of inks, and to make them react by discharging them simultaneously or alternately from their respective ink heads.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了有可能通过有机金属薄膜的溶液处理来形成用于有机半导体器件的电极，即使使用导电电荷转移复合材料，其解决方案几乎不由于它们的形成在溶剂中通常溶解度低。解决方案：有机半导体器件的制造方法包括形成有机半导体层的工艺，以及在有机半导体层的一部分上形成导电电荷转移复电极的工艺。在导电电荷转移复电极的形成中，给电子分子和电子接受分子分别溶解在不同的有机溶剂中以获得两种油墨，并使它们通过从它们各自的油墨同时或交替地排出而反应头。版权所有（C）2008，JPO＆INPIT

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