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1. 发明授权

US07781305B2 Controlled cleaving process 有权
标题翻译：受控切割过程
公开(公告)号：US07781305B2
公开(公告)日：2010-08-24
申请号：US12080114
申请日：2008-03-31
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放部分供体基质。

2. 发明授权

US07759217B2 Controlled process and resulting device 失效
标题翻译：控制过程和结果设备
公开(公告)号：US07759217B2
公开(公告)日：2010-07-20
申请号：US11627924
申请日：2007-01-26
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

3. 发明授权

US06486041B2 Method and device for controlled cleaving process 有权
标题翻译：控制裂解过程的方法和装置
公开(公告)号：US06486041B2
公开(公告)日：2002-11-26
申请号：US09790026
申请日：2001-02-20
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L2130
CPC分类号： H01L21/26506 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2658 , H01L21/76254
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供扩张切割前缘以释放供体来自供体衬底的剩余部分的材料。

4. 发明授权

US06391740B1 Generic layer transfer methodology by controlled cleavage process 有权
标题翻译：通过受控裂解过程的通用层转移方法
公开(公告)号：US06391740B1
公开(公告)日：2002-05-21
申请号：US09301082
申请日：1999-04-28
申请人： Nathan W. Cheung , Francois J. Henley
发明人： Nathan W. Cheung , Francois J. Henley
IPC分类号： H01L2146
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成弱化区域的步骤。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

5. 发明授权

US06248649B1 Controlled cleavage process and device for patterned films using patterned implants 有权
标题翻译：使用图案化植入物的受控裂解工艺和图案化膜的装置
公开(公告)号：US06248649B1
公开(公告)日：2001-06-19
申请号：US09335221
申请日：1999-06-17
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21425
CPC分类号： H01L21/67092 , H01L21/76254
摘要： A technique for forming a film of material from a donor substrate. The technique has a step of introducing energetic particles in a selected patterned manner through a surface of a donor substrate having devices to a selected depth underneath the surface, where the particles have a relatively high concentration to define a donor substrate material above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate at the selected depth, whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：从供体基材形成材料膜的技术。该技术具有以选定的图案化方式通过具有器件的施主衬底的表面将能量粒子引入到表面下方的选定深度的步骤，其中颗粒具有相对较高的浓度以在所选择的深度上限定施主衬底材料，在所选深度处的图案的颗粒。能量源被引导到供体基底的选定区域以引发基底在所选择的深度处的受控裂解作用，于是该切割作用提供了扩张切割前沿，以使供体材料从供体基底的剩余部分释放。

6. 发明授权

US6159824A Silicon-on-silicon wafer bonding process using a thin film blister-separation method 失效
标题翻译：硅硅片接合工艺采用薄膜吸塑分离法
公开(公告)号：US6159824A
公开(公告)日：2000-12-12
申请号：US25967
申请日：1998-02-19
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： B24C1/00 , B26F3/00 , B26F3/02 , B32B5/16 , B81C1/00 , H01L21/00 , H01L21/18 , H01L21/20 , H01L21/22 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/36 , H01L21/38 , H01L21/425 , H01L21/44 , H01L21/46 , H01L21/461 , H01L21/48 , H01L21/50 , H01L21/762 , H01L21/78 , H01L21/8238
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A method for fabricating silicon-on-silicon substrates. A donor wafer (40) is attached to a target wafer (46) using a low-temperature bonding process. The low-temperature bonding process maintains the integrity of a layer of microbubbles (41). Subsequent processing separates a thin film (45) of material from the donor wafer. A high-temperature annealing process finishes the bonding process of the thin film to the target wafer to produce a hybrid wafer suitable for fabricating integrated circuit devices or other devices.
摘要翻译：一种用于制造硅上硅衬底的方法。使用低温接合工艺将施主晶片（40）附接到目标晶片（46）。低温粘合工艺保持了一层微泡（41）的完整性。随后的处理从供体晶片分离出薄膜（45）。高温退火处理完成薄膜与目标晶片的接合工艺，以制造适于制造集成电路器件或其它器件的混合晶片。

7. 发明申请

US20110294306A1 CONTROLLED PROCESS AND RESULTING DEVICE 审中-公开
标题翻译：控制过程和结果设备
公开(公告)号：US20110294306A1
公开(公告)日：2011-12-01
申请号：US13207304
申请日：2011-08-10
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/263
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/2658 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
摘要翻译：一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

8. 发明授权

US08012852B2 Controlled process and resulting device 有权
标题翻译：控制过程和结果设备
公开(公告)号：US08012852B2
公开(公告)日：2011-09-06
申请号：US12789361
申请日：2010-05-27
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

9. 发明授权

US06890838B2 Gettering technique for wafers made using a controlled cleaving process 有权
标题翻译：使用受控切割工艺制造的晶圆的吸收技术
公开(公告)号：US06890838B2
公开(公告)日：2005-05-10
申请号：US10402356
申请日：2003-03-26
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/20 , H01L21/223 , H01L21/265 , H01L21/322 , H01L21/762
CPC分类号： H01L21/3223 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/2658 , H01L21/3226 , H01L21/76254
摘要： A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.
摘要翻译：一种在使用受控断裂工艺制成的晶片中形成吸气层的技术。吸气层可以通过使用束线或等离子体浸没离子注入植入，或者通过通过化学气相沉积形成诸如多晶硅的材料的膜制成。使用受控的裂解工艺来形成绝缘体上多层硅衬底的晶片。吸杂层去除和/或吸引晶片中的杂质，这可能不利于在晶片上制成的集成电路器件的功能和可靠性。

10. 发明授权

US06335264B1 Controlled cleavage thin film separation process using a reusable substrate 有权
标题翻译：使用可重复使用的基材的受控裂解薄膜分离方法
公开(公告)号：US06335264B1
公开(公告)日：2002-01-01
申请号：US09663043
申请日：2000-09-15
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21265
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.
摘要翻译：一种从供体衬底（10）形成材料（12）的薄膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定上述施主衬底材料（12）所选深度。能量被提供到衬底的选定区域以从施主衬底切割材料薄膜。将颗粒再次引入供体底物的供体底物的新鲜表面下方。然后从供体基材上切下第二薄膜材料。

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