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1. 发明授权

US08143514B2 Method and structure for hydrogenation of silicon substrates with shaped covers 失效
公开(公告)号：US08143514B2
公开(公告)日：2012-03-27
申请号：US12204730
申请日：2008-09-04
申请人： Yick Chuen Chan , Pui Yee Joan Ho , Nathan W. Cheung , Chung Chan
发明人： Yick Chuen Chan , Pui Yee Joan Ho , Nathan W. Cheung , Chung Chan
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/18 , H01L31/0236 , H01L31/1892 , Y02E10/50 , Y10T156/11
摘要： Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.

2. 发明授权

US08143511B2 Texture process and structure for manufacture of composite photovoltaic device substrates 失效
标题翻译：用于制造复合光伏器件基板的纹理工艺和结构
公开(公告)号：US08143511B2
公开(公告)日：2012-03-27
申请号：US12182663
申请日：2008-07-30
申请人： Yick Chuen Chan , Nathan W. Cheung
发明人： Yick Chuen Chan , Nathan W. Cheung
IPC分类号： H02N6/00
CPC分类号： H01L31/1896 , H01L31/0475 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A composite structure, e.g., rigid or flexible. The structure has a layer transferred photovoltaic material (e.g., single crystal silicon) having a first region and a second region, and a thickness of material provided between the first region and the second region. The structure has a glue layer overlying the second region. A permeable membrane structure is overlying the glue layer, the permeable membrane structure configured to facilitate outgassing of any volatile species in the glue layer to allow the glue layer to bind the permeable membrane to the layer transferred photovoltaic material.
摘要翻译：复合结构，例如刚性或柔性。该结构具有具有第一区域和第二区域的层转移的光伏材料（例如，单晶硅）和设置在第一区域和第二区域之间的材料的厚度。该结构具有覆盖第二区域的胶层。渗透膜结构覆盖在胶层上，可渗透膜结构被配置为有助于使胶层中的任何挥发性物质脱气，以使胶层将可渗透膜与转移的光伏材料结合。

3. 发明授权

US07781305B2 Controlled cleaving process 有权
标题翻译：受控切割过程
公开(公告)号：US07781305B2
公开(公告)日：2010-08-24
申请号：US12080114
申请日：2008-03-31
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放部分供体基质。

4. 发明授权

US07759217B2 Controlled process and resulting device 失效
标题翻译：控制过程和结果设备
公开(公告)号：US07759217B2
公开(公告)日：2010-07-20
申请号：US11627924
申请日：2007-01-26
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

5. 发明授权

US06486041B2 Method and device for controlled cleaving process 有权
标题翻译：控制裂解过程的方法和装置
公开(公告)号：US06486041B2
公开(公告)日：2002-11-26
申请号：US09790026
申请日：2001-02-20
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L2130
CPC分类号： H01L21/26506 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2658 , H01L21/76254
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供扩张切割前缘以释放供体来自供体衬底的剩余部分的材料。

6. 发明授权

US06391740B1 Generic layer transfer methodology by controlled cleavage process 有权
标题翻译：通过受控裂解过程的通用层转移方法
公开(公告)号：US06391740B1
公开(公告)日：2002-05-21
申请号：US09301082
申请日：1999-04-28
申请人： Nathan W. Cheung , Francois J. Henley
发明人： Nathan W. Cheung , Francois J. Henley
IPC分类号： H01L2146
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成弱化区域的步骤。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

7. 发明授权

US06344404B1 Method of separation films from bulk substrates by plasma immersion ion implantation 有权
标题翻译：通过等离子体浸没离子注入分离大片基片的方法
公开(公告)号：US06344404B1
公开(公告)日：2002-02-05
申请号：US09431007
申请日：1999-11-01
申请人： Nathan W. Cheung , Xiang Lu , Chenming Hu
发明人： Nathan W. Cheung , Xiang Lu , Chenming Hu
IPC分类号： H01L21265
CPC分类号： H01L21/2236 , H01L21/76251 , Y10S438/977
摘要： A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation (“PIII”) system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.
摘要翻译：用于使用等离子体浸没离子注入（“PIII”）系统10制造诸如绝缘体上硅衬底之类的衬底的技术。该技术包括具有提供衬底2100的步骤的方法。离子被植入2109 衬底的表面到第一期望深度，以使用等离子体浸没离子注入系统10提供离子的第一分布。注入的离子限定了植入物上方的材料2101的第一厚度。然后，全部能量增加基底以引发裂解作用，其中分裂作用足以使材料的厚度从基底的剩余部分完全释放。通过PIII系统，以有效和成本有效的方式将离子引入衬底。

8. 发明授权

US06248649B1 Controlled cleavage process and device for patterned films using patterned implants 有权
标题翻译：使用图案化植入物的受控裂解工艺和图案化膜的装置
公开(公告)号：US06248649B1
公开(公告)日：2001-06-19
申请号：US09335221
申请日：1999-06-17
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21425
CPC分类号： H01L21/67092 , H01L21/76254
摘要： A technique for forming a film of material from a donor substrate. The technique has a step of introducing energetic particles in a selected patterned manner through a surface of a donor substrate having devices to a selected depth underneath the surface, where the particles have a relatively high concentration to define a donor substrate material above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate at the selected depth, whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：从供体基材形成材料膜的技术。该技术具有以选定的图案化方式通过具有器件的施主衬底的表面将能量粒子引入到表面下方的选定深度的步骤，其中颗粒具有相对较高的浓度以在所选择的深度上限定施主衬底材料，在所选深度处的图案的颗粒。能量源被引导到供体基底的选定区域以引发基底在所选择的深度处的受控裂解作用，于是该切割作用提供了扩张切割前沿，以使供体材料从供体基底的剩余部分释放。

9. 发明授权

US6159824A Silicon-on-silicon wafer bonding process using a thin film blister-separation method 失效
标题翻译：硅硅片接合工艺采用薄膜吸塑分离法
公开(公告)号：US6159824A
公开(公告)日：2000-12-12
申请号：US25967
申请日：1998-02-19
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： B24C1/00 , B26F3/00 , B26F3/02 , B32B5/16 , B81C1/00 , H01L21/00 , H01L21/18 , H01L21/20 , H01L21/22 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/36 , H01L21/38 , H01L21/425 , H01L21/44 , H01L21/46 , H01L21/461 , H01L21/48 , H01L21/50 , H01L21/762 , H01L21/78 , H01L21/8238
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A method for fabricating silicon-on-silicon substrates. A donor wafer (40) is attached to a target wafer (46) using a low-temperature bonding process. The low-temperature bonding process maintains the integrity of a layer of microbubbles (41). Subsequent processing separates a thin film (45) of material from the donor wafer. A high-temperature annealing process finishes the bonding process of the thin film to the target wafer to produce a hybrid wafer suitable for fabricating integrated circuit devices or other devices.
摘要翻译：一种用于制造硅上硅衬底的方法。使用低温接合工艺将施主晶片（40）附接到目标晶片（46）。低温粘合工艺保持了一层微泡（41）的完整性。随后的处理从供体晶片分离出薄膜（45）。高温退火处理完成薄膜与目标晶片的接合工艺，以制造适于制造集成电路器件或其它器件的混合晶片。

10. 发明授权

US08153892B2 Internal light trapping method and structure using porous monocyrstalline silicon films for photovoltaic applications 失效
标题翻译：用于光伏应用的多孔单晶硅膜的内部光捕获方法和结构
公开(公告)号：US08153892B2
公开(公告)日：2012-04-10
申请号：US12196244
申请日：2008-08-21
申请人： Yick Chuen Chan , Nathan W. Cheung , Chung Chan
发明人： Yick Chuen Chan , Nathan W. Cheung , Chung Chan
IPC分类号： H01L31/00
CPC分类号： H01L31/035281 , H01L31/0236 , H01L31/0392 , H01L31/054 , H01L31/068 , H01L31/1892 , Y02E10/547
摘要： A thin photovoltaic device for solar cell applications. As used herein, the term “thin” generally means less than about 20 microns of silicon crystal material, but can also be other dimensions. The term thin should not be limited and should be construed broadly and consistently as one of ordinary skill in the art. In a specific embodiment, the device has a support substrate having a surface region. The device has a thickness of photovoltaic material overlying the surface region of support substrate and having a predefined surface texture to facilitate trapping of one or more incident photons using at least a refraction process to cause the one or more photons to traverse a longer optical path within an inner region of the thickness of material according to a specific embodiment. In a specific embodiment the longer optical path is provided relative to a shorter optical path characteristic of a surface region without the predefined surface roughness. In a specific embodiment, the device also has a dimension of about one wavelength of visible light to about two microns characterizing the thickness of the photovoltaic material.
摘要翻译：一种用于太阳能电池应用的薄型光伏器件。如本文所用，术语“薄”通常是指小于约20微米的硅晶体材料，但也可以是其它尺寸。术语“薄”不应该被限制，并且应该被广泛地和一致地解释为本领域普通技术人员。在具体实施例中，该装置具有具有表面区域的支撑基板。该器件具有覆盖在支撑衬底的表面区域上的光伏材料的厚度并且具有预定义的表面纹理，以便于使用至少一个折射过程捕获一个或多个入射光子，以使一个或多个光子穿过更长的光路，根据具体实施例的材料厚度的内部区域。在具体实施例中，相对于表面区域的较短光路特征提供较长的光路而没有预定的表面粗糙度。在具体实施例中，该装置还具有大约一个波长的可见光的尺寸，大约两微米，表征光伏材料的厚度。

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