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1. 发明授权

US06700170B1 Insulated gate transistor having a gate insulator containing nitrogen atoms and fluorine atoms 有权
标题翻译：绝缘栅晶体管具有含有氮原子和氟原子的栅极绝缘体
公开(公告)号：US06700170B1
公开(公告)日：2004-03-02
申请号：US09471173
申请日：1999-12-23
申请人： Narihiro Morosawa , Hiroshi Iwata
发明人： Narihiro Morosawa , Hiroshi Iwata
IPC分类号： H01L29772
CPC分类号： H01L21/28202 , H01L21/28176 , H01L21/823842 , H01L21/823857 , H01L29/518
摘要： An insulated gate transistor in which nitride oxide film having a nitrogen concentration of 1×1020 (/cm3) or more and containing a halogen element is used as a gate insulator. Because the gate insulator has a nitrogen concentration of 1×1020 (/cm3) or more, boron contained in the gate electrode of the p-type transistor is never diffused into the channel. Further because a halogen element is contained in the gate insulator, transistor conductance is increased and reliability in hot carrier injection is improved. Thus, an insulated gate transistor which has a sufficiently large conductance and which is superior in reliability can be fabricated.
摘要翻译：绝缘栅晶体管，其中氮浓度为1×10 20（/ cm 3）以上并含有卤素元素的氮氧化物膜用作栅极绝缘体。因为栅极绝缘体的氮浓度为1×10 20（/ cm 3）以上，所以p型晶体管的栅电极中所含的硼不会扩散到沟道中。此外，由于卤素元素包含在栅极绝缘体中，晶体管导通性增加，并且热载流子注入中的可靠性提高。因此，可以制造具有足够大电导且可靠性优异的绝缘栅晶体管。

2. 发明授权

US06545328B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06545328B1
公开(公告)日：2003-04-08
申请号：US09548633
申请日：2000-04-12
申请人： Narihiro Morosawa , Hiroshi Iwata
发明人： Narihiro Morosawa , Hiroshi Iwata
IPC分类号： H01L2782
CPC分类号： H01L29/41783 , H01L21/28035 , H01L21/28052 , H01L21/32105 , H01L21/32155 , H01L21/823814 , H01L21/823828 , H01L29/4916 , H01L29/665 , H01L29/66545
摘要： A semiconductor device includes an insulating gate field effect transistor including a gate electrode, wherein the gate electrode includes a polycrystalline semiconductor film having a crystal defect density of about 1×1018 cm−3 or less. In certain embodiments, the polycrystalline semiconductor film may be oxidation thermally annealed by subjecting the polycrystalline semiconductor film to thermal treatment in an oxidation atmosphere to carry out oxidization of the polycrystalline semiconductor film and activation of impurities simultaneously.
摘要翻译：半导体器件包括具有栅电极的绝缘栅场效应晶体管，其中栅电极包括晶体缺陷密度约为1×1018cm-3或更小的多晶半导体膜。在某些实施方案中，多晶半导体膜可以通过在多晶半导体膜中在氧化气氛中进行热处理来进行氧化热退火，以进行多晶半导体膜的氧化和同时活化杂质。

3. 发明授权

US09412763B2 Display device and electronic unit 有权
标题翻译：显示设备和电子单元
公开(公告)号：US09412763B2
公开(公告)日：2016-08-09
申请号：US13417989
申请日：2012-03-12
申请人： Narihiro Morosawa
发明人： Narihiro Morosawa
IPC分类号： G02F1/1362 , H01L29/786 , H01L27/12 , G02F1/1368 , H01L27/32
CPC分类号： H01L27/1255 , G02F1/13306 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/136213 , G02F1/1368 , G02F2001/133357 , H01L27/1225 , H01L27/3262 , H01L27/3265 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
摘要： A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.
摘要翻译：显示装置包括基板，显示元件，作为显示元件的驱动元件的晶体管和保持与视频信号对应的电荷的保持电容元件，并且包括第一导电膜，包括氧化物的第一半导体层半导体，绝缘膜和第二导电膜。显示元件，晶体管和保持电容元件设置在基板上。

4. 发明授权

US08497504B2 Thin film transistor and display unit 有权
标题翻译：薄膜晶体管和显示单元
公开(公告)号：US08497504B2
公开(公告)日：2013-07-30
申请号：US13287689
申请日：2011-11-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
IPC分类号： H01L29/10
CPC分类号： H01L27/3262 , H01L27/1225 , H01L29/41733 , H01L29/458 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2251/5315
摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
摘要翻译：能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

5. 发明授权

US08309956B2 Thin film transistor, display unit, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，显示单元和制造薄膜晶体管的方法
公开(公告)号：US08309956B2
公开(公告)日：2012-11-13
申请号：US12629283
申请日：2009-12-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
IPC分类号： H01L29/10 , H01L29/12 , H01L29/08 , H01L35/24 , H01L51/00 , H01L31/102
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262
摘要： A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.
摘要翻译：薄膜晶体管包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与栅极绝缘膜上的栅电极对应的沟道区域的氧化物半导体薄膜层; 至少形成在与栅极绝缘膜和氧化物半导体薄膜层上的沟道区域对应的区域中的沟道保护层，其包括下层侧的第一沟道保护层和第二沟道保护层上层侧以及源极/漏极，其形成在沟道保护层上并与氧化物半导体薄膜层电连接。第一沟道保护层由氧化物绝缘材料制成，第一沟道保护层和第二沟道保护层中的一个或两个由低透氧材料制成。

6. 发明申请

US20100133525A1 THIN FILM TRANSISTOR, DISPLAY UNIT, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，显示单元及制造薄膜晶体管的方法
公开(公告)号：US20100133525A1
公开(公告)日：2010-06-03
申请号：US12629283
申请日：2009-12-02
申请人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
发明人： Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga
IPC分类号： H01L29/786 , H01L51/52 , H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262
摘要： A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.
摘要翻译：薄膜晶体管包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与栅极绝缘膜上的栅电极对应的沟道区域的氧化物半导体薄膜层; 至少形成在与栅极绝缘膜和氧化物半导体薄膜层上的沟道区域对应的区域中的沟道保护层，其包括下层侧的第一沟道保护层和第二沟道保护层上层侧以及源极/漏极，其形成在沟道保护层上并与氧化物半导体薄膜层电连接。第一沟道保护层由氧化物绝缘材料制成，第一沟道保护层和第二沟道保护层中的一个或两个由低透氧材料制成。

7. 发明授权

US6018182A Insulating gate field effect semiconductor device and method of manufacturing the same 失效
标题翻译：绝缘栅场效应半导体器件及其制造方法
公开(公告)号：US6018182A
公开(公告)日：2000-01-25
申请号：US859100
申请日：1997-05-20
申请人： Narihiro Morosawa
发明人： Narihiro Morosawa
IPC分类号： H01L21/316 , H01L21/28 , H01L21/336 , H01L29/49 , H01L29/786 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66765 , H01L21/28158 , H01L29/4908
摘要： An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulator film are lowered, and causing no degradation of device characteristics and no lowering of reliability are caused. A SiO.sub.2 film including fluorine atoms is used as the gate insulator film to compensate defects in the gate insulator film and at the interface between the channel semiconductor film and the gate insulator film.
摘要翻译：一种绝缘栅场效应半导体器件，其具有高耐潮湿吸附的栅极绝缘膜，其中栅绝缘膜中的阱密度和沟道半导体膜与栅极绝缘膜之间的界面处的陷阱密度降低，并且不会导致器件劣化引起特性并且不降低可靠性。使用包含氟原子的SiO 2膜作为栅极绝缘膜来补偿栅极绝缘膜中的缺陷和沟道半导体膜与栅极绝缘膜之间的界面。

8. 发明授权

US08618545B2 Thin film transistor and display 有权
标题翻译：薄膜晶体管和显示屏
公开(公告)号：US08618545B2
公开(公告)日：2013-12-31
申请号：US13400845
申请日：2012-02-21
申请人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
发明人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译：提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。薄膜晶体管包括：栅电极; 活性层以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触，所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。

9. 发明授权

US08426851B2 Thin film transistor and display device 有权
公开(公告)号：US08426851B2
公开(公告)日：2013-04-23
申请号：US12654658
申请日：2009-12-29
申请人： Narihiro Morosawa , Takashige Fujimori
发明人： Narihiro Morosawa , Takashige Fujimori
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/41733 , H01L29/45 , H01L29/78606
摘要： Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

10. 发明授权

US08247811B2 Thin-film transistor and display device 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US08247811B2
公开(公告)日：2012-08-21
申请号：US12694354
申请日：2010-01-27
申请人： Narihiro Morosawa , Takashige Fujimori
发明人： Narihiro Morosawa , Takashige Fujimori
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/3244 , H01L2251/5315
摘要： A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
摘要翻译：薄膜晶体管包括：形成在基板上的栅电极; 形成与所述栅电极对应的沟道区域的氧化物半导体层; 形成在所述基板和所述栅极上的第一栅极绝缘膜，并且包括氮化硅膜; 选择性地形成为与所述氧化物半导体层接触的第二栅极绝缘膜，所述第二栅极绝缘膜在与所述氧化物半导体层对应的所述第一栅极绝缘膜上的区域中，并且包括氧化硅膜和氧氮化硅膜之一; 源极/漏极; 和保护膜。氧化物半导体层的上表面和侧表面以及第二栅极绝缘膜的侧表面在第一栅极绝缘膜上被源/漏电极和保护膜覆盖。

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