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1. 发明授权

US4279648A High silicon chromium nickel steel for strong nitric acid 失效
标题翻译：高硅铬镍钢用于强硝酸
公开(公告)号：US4279648A
公开(公告)日：1981-07-21
申请号：US103922
申请日：1979-12-17
申请人： Naoya Ito , Kiichi Saito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
发明人： Naoya Ito , Kiichi Saito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
IPC分类号： C22C38/00 , B23K35/30 , C22C38/40 , C22C38/48 , C22C38/50 , C22C38/58 , F16J3/04 , C22C38/02
CPC分类号： C22C38/48 , C22C38/40 , C22C38/50 , C22C38/58
摘要： A high-silicon-nickel-chromium steel resistant to concentrated nitric acid with a good workability and a good weldability, comprisingcarbon in an amount of not more than 0.03% (C.ltoreq.0.03%),silicon in an amount of from more than 5% to not more than 7% (5%
摘要翻译：耐高浓度硝酸的高硅镍铬钢，具有良好的可加工性和良好的可焊性，其中碳含量不超过0.03％（C≤0.03％），硅量较多 5％〜7％以下（5％

2. 发明授权

US4381941A Method for improving surface defect of specific steel resistant to concentrated nitric acid 失效
标题翻译：改善耐硝酸浓度的钢的表面缺陷的方法
公开(公告)号：US4381941A
公开(公告)日：1983-05-03
申请号：US246859
申请日：1981-03-23
申请人： Naoya Ito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
发明人： Naoya Ito , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masayoshi Miki
IPC分类号： C21C7/04 , C21C7/00 , C22C38/48 , C22C38/50 , C22C38/58 , C22C33/00
CPC分类号： C22C38/50 , C21C7/0006 , C22C38/48 , C22C38/58
摘要： A method for improving surface defect of specific steel resistant to concentrated nitric acid, wherein the specific steel in a molten state, either a stainless steel comprising C.ltoreq.0.1 wt %, 2.5.ltoreq.Si.ltoreq.5 wt %, Mn.ltoreq.2 wt %,15.ltoreq.Cr.ltoreq.20 wt %, 10.ltoreq.Ni.ltoreq.22 wt %,C.times.10.ltoreq. at least one of Nb, Ta and Zr.ltoreq.2.5 wt %,the balance being iron and inevitable impurities,or a high-silicon-nickel-chromium steel comprisingC.ltoreq.0.03 wt %, 5.ltoreq.Si.ltoreq.7 wt %, Mn.ltoreq.10 wt %,7.ltoreq.Cr.ltoreq.16 wt %, 10.ltoreq.Ni.ltoreq.19 wt %,C.times.4.ltoreq. at least one of Nb, Ta and Zr.ltoreq.2 wt %,the balance being iron and inevitable impurities,is admixed with titanium (0.05.ltoreq.Ti.ltoreq.0.2 wt %) when producing said steel.
摘要翻译：一种改善对浓硝酸耐腐蚀的特种钢的表面缺陷的方法，其中熔融状态的特定钢，包括C≤0.1重量％，2.5≤Si≤5重量％的不锈钢，Mn Nb，Ta和Zr中的至少一种2.5重量％，25重量％，15重量％，20重量％，10重量％，余量为铁和不可避免的杂质，或包含C <0.03重量％，5≤Si≤7重量％，Mn <10重量％，7重量％ / = Cr <16wt％，10≤Ni≤19wt％，Cx4 = Nb，Ta和Zr中的至少一种2wt％，余量为铁和不可避免的杂质，在制造所述钢时与钛（0.05≤Ti≤0.2wt％）混合。

3. 发明授权

US4585479A Welding material of ferrite-austenite two-phase stainless steel and method of application 失效
标题翻译：铁素体 - 奥氏体两相不锈钢焊接材料及其应用
公开(公告)号：US4585479A
公开(公告)日：1986-04-29
申请号：US580667
申请日：1984-02-16
申请人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
发明人： Masahiro Aoki , Kiichi Saito , Takeshi Yoshida , Noriyasu Ikeda , Masanori Takahashi , Masao Okubo , Masaaki Nagayama
IPC分类号： B23K35/12 , B23K35/30 , C22C38/40
CPC分类号： B23K35/3086
摘要： This invention relates to a welding material of ferrite-austenite two-phase stainless steel capable of producing a weld metal having a high resistance to corrosion, particularly in an environment containing nitric acid, and the method of application therefor. The welding material consists essentially of not more than 0.03% of C, not more than 2.0% of Si, not more than 2.0% of Mn, 25 to 30% of Cr, 7 to 12% of Ni, not more than 0.35% of N, and the balance Fe and inevitable impurities. The Ni balance value given by the following formula ranges between -11.7 and -6.7:Ni balance value=Ni%+0.5.times.Mn%+30.times.(C+N)%-1.1 (Cr%+1.5.times.Si%)+8.2.
摘要翻译：本发明涉及能够生产具有高抗腐蚀性的焊接金属的铁素体 - 奥氏体两相不锈钢的焊接材料，特别是在含有硝酸的环境中，以及其应用方法。焊接材料基本上由不超过0.03％的C，不超过2.0％的Si，不超过2.0％的Mn，25至30％的Cr，7至12％的Ni，不超过0.35％的 N，余量为Fe和不可避免的杂质。由以下公式给出的Ni平衡值在-11.7和-6之间。

4. 发明授权

US4653684A Welding material for austenite stainless steel having high Si content and method of application 失效
标题翻译：具有高Si含量的奥氏体不锈钢焊接材料和应用方法
公开(公告)号：US4653684A
公开(公告)日：1987-03-31
申请号：US650763
申请日：1984-09-12
申请人： Kiichi Saito , Masahiro Aoki , Noriyasu Ikeda , Masayoshi Miki , Masaaki Nagayama
发明人： Kiichi Saito , Masahiro Aoki , Noriyasu Ikeda , Masayoshi Miki , Masaaki Nagayama
IPC分类号： B23K35/30 , C22C38/34 , B23K35/22 , C22C38/40
CPC分类号： B23K35/3086
摘要： This invention relates to a welding material for welding a high-Si austenite stainless steel, capable of ensuring a high corrosion resistance of the weld metal in hot nitric acid of high concentration, while maintaining a toughness of the weld metal not smaller than 2 Kg-m/cm.sup.2, and the method of application therefor. The welding material has a composition containing not greater than 0.015% of C, 5 to 7% of Si, not greater than 2% of Mn, 15 to 20% of Cr, 10 to 22% of Ni, not greater than 0.02% of N, not greater than 0.45% of one or both of Nb and Ta, and the balance substantially Fe and inevitable impurities the sum of C and N contents is selected to be not greater than 0.03% and the sum of Nb and Ta contents is selected to be not smaller than 15.times.(C+N)%. The Ni-balance value given by the following formula ranges between -4 and -2.Ni balance value=% Ni+30(%C+%N)+0.5(%Mn)-1.1(%Cr+1.5.times.%Si)+8.2
摘要翻译：本发明涉及一种用于焊接高Si奥氏体不锈钢的焊接材料，其能够确保焊接金属在高浓度热硝酸中的高耐蚀性，同时保持焊接金属的韧性不小于2Kg- m / cm 2及其应用方法。该焊接材料的组成为：C：不大于0.015％，Si：5〜7％，Mn：2％以下，Cr：15〜20％，Ni：10〜22％，Ni： N，不大于Nb和Ta中的一种或两种的0.45％，余量基本上为Fe和不可避免的杂质，C和N含量的总和被选择为不大于0.03％，并且选择Nb和Ta的总和不小于15x（C + N）％。由以下公式给出的Ni平衡值范围介于-4和-2之间。 Ni平衡值=％Ni + 30（％C +％N）+0.5（％Mn）-1.1（％Cr + 1.5x％Si）+8.2

5. 发明授权

US4659397A Manufacturing process for plate or forging of ferrite-austenite two-phase stainless steel 失效
标题翻译：铁素体 - 奥氏体两相不锈钢板或锻造的制造工艺
公开(公告)号：US4659397A
公开(公告)日：1987-04-21
申请号：US646896
申请日：1984-08-31
申请人： Mineo Kobayashi , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masaaki Nagayama
发明人： Mineo Kobayashi , Takeshi Yoshida , Masahiro Aoki , Masao Okubo , Masaaki Nagayama
IPC分类号： C22C38/00 , C21D8/00 , C21D9/46 , C22C38/40 , C22C38/54 , C21D7/13
CPC分类号： C21D8/005 , C22C38/40
摘要： This invention relates to a manufacturing process for plate or forging (bar, stamp work or the like) of ferrite-austenite two-phase stainless steel, containing C at 0.03% or below, Si at 2.0% or below, Mn at 2.0% or below, Cr at 25 to 35%, Ni at 6 to 15%, N at 0.35% or below, and Fe and inevitable impurity for the remainder with or without adding B at 0.001 to 0.030% with the following nickel balance value specified at -3 to -9 and comprising an average crystal grain size at 0.015 mm or below from heating an ingot of the above mentioned ferrite-austenite two-phase stainless steel at 1,200.degree. C. or below and keeping a forging ratio by hot working at 5 or over.Ni balance value=Ni %+0.5 Mn %+30.times.(C+N) %-1.1(Cr %+1.5 Si %)+8.2
摘要翻译：本发明涉及含有0.03％以下的C，2.0％以下的Si，2.0％以下的Mn的铁素体 - 奥氏体相两相不锈钢的板或锻造（钢筋，冲压加工等）的制造方法， 25％〜35％的Cr，6〜15％的Ni，0.35％以下的N，Fe和不可避免的杂质，其余有或没有添加B为0.001〜0.030％，以下的镍平衡值规定为：在上述铁素体 - 奥氏体相两相不锈钢锭的1200℃或更低温度下加热锭子的平均晶粒尺寸为0.015mm或更小，并且通过热加工保持锻压比为5或过度。 Ni平衡值= Ni％+ 0.5 Mn％+ 30x（C + N）％-1.1（Cr％+ 1.5Si％）+ 8.2

6. 发明授权

US08449160B2 Multi-wavelength light emitting device 有权
标题翻译：多波长发光装置
公开(公告)号：US08449160B2
公开(公告)日：2013-05-28
申请号：US12849352
申请日：2010-08-03
申请人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
发明人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
IPC分类号： F21V7/04
CPC分类号： G02B6/4204 , G02B27/0994 , G02B27/1006 , G02B27/104 , G02B27/123 , H01S5/02212 , H01S5/02284 , H01S5/4012 , H01S5/4093 , H04N9/3129 , H04N9/3161
摘要： A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要翻译：多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分来自发光点。

7. 发明授权

US08179931B2 Wavelength tunable filter and wavelength tunable laser module 有权
标题翻译：波长可调滤波器和波长可调激光模块
公开(公告)号：US08179931B2
公开(公告)日：2012-05-15
申请号：US12622785
申请日：2009-11-20
申请人： Hideo Arimoto , Masahiro Aoki
发明人： Hideo Arimoto , Masahiro Aoki
IPC分类号： H01S3/10
CPC分类号： G02F1/3133 , H01S5/06256 , H01S5/1032 , H01S5/1035
摘要： A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
摘要翻译：波长可调滤波器和波长可调激光器模块是一种同向耦合器类型，其特性与处理误差不会显着变化。它们被构造成包括具有第一光波导和第二光波导的半导体衬底。第一和第二光波导从半导体衬底的第一侧延伸到相对的第二侧。第一光波导包括具有周期性凸起和凹陷的平面布局的第一芯层和垂直夹着第一芯层的一对电极。第二光波导包括具有比第一芯层低的折射率的第二芯层。此外，具有与第二芯层相同的组成和膜厚度的层被放置在第一芯层下方。

8. 发明申请

US20110227116A1 LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置，光接收装置及其制造方法
公开(公告)号：US20110227116A1
公开(公告)日：2011-09-22
申请号：US13129115
申请日：2009-10-21
申请人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
发明人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
IPC分类号： H01L33/34 , H01L33/60 , H01L31/028 , H01L31/18
CPC分类号： H01S5/3201 , H01L31/103 , H01L31/1808 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/0264 , H01S5/0424 , H01S5/1032 , H01S5/1231 , H01S5/125 , H01S5/3223 , Y02E10/50
摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
摘要翻译：本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜。

9. 发明申请

US20110098477A1 Method Of Producing Compound Having Anti-Hcv Activity 审中-公开
标题翻译：生产具有抗Hcv活性的化合物的方法
公开(公告)号：US20110098477A1
公开(公告)日：2011-04-28
申请号：US11988003
申请日：2006-06-27
申请人： Masahiro Aoki , Yoshie Nagahashi , Hideyuki Kato , Tatsuya Ito , Miyako Masubuchi , Toru Okuda
发明人： Masahiro Aoki , Yoshie Nagahashi , Hideyuki Kato , Tatsuya Ito , Miyako Masubuchi , Toru Okuda
IPC分类号： C07D213/55 , C07C229/36 , C12P13/04
CPC分类号： C07C229/36 , C07C231/14 , C12P13/02 , C07C235/76
摘要： There is provided a convenient and inexpensive method of producing a compound which has a high activity of inhibiting replication of hepatitis C virus (HCV) and is useful for preventing and treating a liver disease caused by HCV infection.It is a method of biologically producing a compound represented by the formula (1): [wherein A represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a pharmaceutically acceptable salt thereof, a method comprising adding an amino acid derivative represented by the formula (3): [wherein A has the same meaning as defined for the compound of the above formula (1); and R represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a salt thereof into the fungal mycelium or the culture medium/culture broth of a filamentous fungal strain having an ability to produce the compound represented by the formula (2): to thereby cause the fungal strain to directly produce the compound of the formula (1).
摘要翻译：提供了一种方便且廉价的生产具有抑制丙型肝炎病毒（HCV）复制活性的化合物的方法，并且可用于预防和治疗由HCV感染引起的肝脏疾病。生物地制造式（1）表示的化合物或其药学上可接受的盐的方法：[其中A表示氢原子，碳原子数1〜8的直链或支链烷基等] 包括加入由式（3）表示的氨基酸衍生物的方法：[其中A具有与上述式（1）的化合物相同的含义; R表示氢原子，碳原子数为1〜8的直链或支链烷基等，或其盐形成具有生产能力的丝状真菌菌株的真菌菌丝体或培养液/培养液由式（2）表示的化合物：由此使真菌菌株直接生成式（1）的化合物。

10. 发明授权

US07906237B2 Battery 有权
标题翻译：电池
公开(公告)号：US07906237B2
公开(公告)日：2011-03-15
申请号：US10866214
申请日：2004-06-10
申请人： Momoe Adachi , Shigeru Fujita , Masahiro Aoki , Hiroyuki Akashi , Yoshiaki Naruse
发明人： Momoe Adachi , Shigeru Fujita , Masahiro Aoki , Hiroyuki Akashi , Yoshiaki Naruse
IPC分类号： H01M4/58 , H01M6/04
CPC分类号： H01M10/054 , H01M4/134 , H01M10/052 , H01M10/0565 , H01M10/0568 , H01M2300/0025
摘要： A battery is provided which has a high capacity and can improve battery characteristics, such as cycle characteristics. The battery includes a spirally wound electrode body, wherein a cathode and an anode are wound with a separator in between. The anode includes, for example, simple substances, alloys, compounds of metal elements or metalloid elements capable of forming an alloy with Li, the like and combinations thereof. An electrolytic solution wherein an electrolyte salt is dissolved in a solvent is impregnated in the separator. For the electrolyte salt, a light metallic salt having B—O bond or P—O bond, such as difluoro[oxalato-O,O′]lithium borate and tetra fluoro[oxalato-O,O′]lithium phosphate, can be used. By forming a stable coating, decomposition reaction of the solvent can be inhibited, and reaction between the anode and the solvent can be prevented.
摘要翻译：提供具有高容量并且可以改善诸如循环特性的电池特性的电池。电池包括螺旋卷绕的电极体，其中阴极和阳极在其间缠绕有隔膜。阳极包括例如能够与Li形成合金的简单物质，合金，金属元素的化合物或类金属元素及其组合。将电解质盐溶解在溶剂中的电解液浸渍在隔膜中。对于电解质盐，可以使用具有B-O键或P-O键的轻金属盐，例如二氟[草酸-O，O']硼酸锂和四氟[草酸-O，O']磷酸锂。通过形成稳定的涂层，能够抑制溶剂的分解反应，能够防止阳极与溶剂的反应。

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