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1. 发明申请

US20120012556A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20120012556A1
公开(公告)日：2012-01-19
申请号：US12919293
申请日：2009-02-26
申请人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
发明人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
摘要翻译：等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同温度。

2. 发明授权

US09263298B2 Plasma etching apparatus and plasma etching method 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US09263298B2
公开(公告)日：2016-02-16
申请号：US12919293
申请日：2009-02-26
申请人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
发明人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/3213 , H01J37/32 , H01L21/67
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
摘要翻译：等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同温度。

3. 发明申请

US20110114261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110114261A1
公开(公告)日：2011-05-19
申请号：US13003102
申请日：2009-06-16
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
IPC分类号： C23F1/08
CPC分类号： H01L21/6719 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01L21/67126 , H01L21/68785
摘要： A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
摘要翻译：等离子体处理装置包括处理容器，其中对待处理的基板进行等离子体处理，保持台设置在处理容器中并保持在其上待处理的基板，电介质板，其设置在位置面向保持阶段并将微波传输到处理容器中，以及反应气体供应单元，其向保持阶段保持的待处理基板的中心区域提供用于等离子体处理的反应气体。这里，反应气体供给单元包括喷射器基座，该喷射器基座设置在比介质板的面向保持台的壁面更靠内侧的位置。在喷射器基座中形成供应孔，其将用于等离子体处理的反应气体供应到处理容器中。

4. 发明授权

US08800484B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08800484B2
公开(公告)日：2014-08-12
申请号：US13003102
申请日：2009-06-16
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
IPC分类号： C23C16/511 , H01L21/67 , H01J37/32 , H01L21/687 , C23F1/00
CPC分类号： H01L21/6719 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01L21/67126 , H01L21/68785
摘要： A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
摘要翻译：等离子体处理装置包括处理容器，其中对待处理的基板进行等离子体处理，保持台设置在处理容器中并保持在其上待处理的基板，电介质板，其设置在位置面向保持阶段并将微波传输到处理容器中，以及反应气体供应单元，其向保持阶段保持的待处理基板的中心区域提供用于等离子体处理的反应气体。这里，反应气体供给单元包括喷射器基座，该喷射器基座设置在比介质板的面向保持台的壁面更靠内侧的位置。在喷射器基座中形成供应孔，其将用于等离子体处理的反应气体供应到处理容器中。

5. 发明申请

US20120190208A1 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20120190208A1
公开(公告)日：2012-07-26
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

6. 发明授权

US08771537B2 Plasma treatment device and plasma treatment method 有权
标题翻译：等离子处理装置和等离子体处理方法
公开(公告)号：US08771537B2
公开(公告)日：2014-07-08
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

7. 发明申请

US20110240598A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110240598A1
公开(公告)日：2011-10-06
申请号：US13129607
申请日：2009-08-25
申请人： Nobuyuki Okayama , Naoki Matsumoto
发明人： Nobuyuki Okayama , Naoki Matsumoto
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/3244 , C23C16/452 , C23C16/4558 , H01J37/32192
摘要： A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provided at a center of a dielectric plate 16 and configured to supply the reactant gas in a directly downward direction toward a central region of a processing target substrate W held on a holding table 14; and a second reactant gas supply unit 62 provided at a position directly above the holding table 14 but not directly above the processing target substrate W held on the holding table 14 and configured to supply the reactant gas toward a center of the processing target substrate W held on the holding table 14.
摘要翻译：等离子体处理装置11包括用于将等离子体处理用反应气体供给到处理室12中的反应气供给部13.反应气供给部13具备设置在电介质板16的中央的第一反应气供给部61 并且被配置为朝向保持在保持台14上的处理对象基板W的中心区域的直接向下方向供给反应气体; 以及第二反应气体供给部62，其设置在保持台14正上方的位置，但不是保持在保持台14上的处理对象基板W的正上方，并被配置为朝向处理对象基板W的中心供给反应气体在桌子14上。

8. 发明授权

US08920596B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08920596B2
公开(公告)日：2014-12-30
申请号：US12862915
申请日：2010-08-25
申请人： Naoki Mihara , Naoki Matsumoto , Jun Yoshikawa , Kazuo Murakami
发明人： Naoki Mihara , Naoki Matsumoto , Jun Yoshikawa , Kazuo Murakami
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/513 , H01J37/3244 , H01J37/32449
摘要： In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
摘要翻译：在通过对引入到处理容器中的处理气体进行等离子体处理衬底的等离子体处理装置中，在处理容器的顶表面上形成引入处理气体的引入单元; 气体保持部，其通过供给通路收集从处理容器的外部供给的处理气体，并且在导入单元中形成有能够使气体保持部与处理容器内部连通的多个气体喷出孔 ; 在气体保持部的与供给通道的开口相对的位置处不形成气体喷出孔; 并且每个气体喷射孔的横截面具有扁平形状。

9. 发明授权

US08877004B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08877004B2
公开(公告)日：2014-11-04
申请号：US12866545
申请日：2009-02-06
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Masaru Sasaki
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.
摘要翻译：电介质板20设置在面向处理室2的基座3的顶面上，并且具有多个微波透射槽33的缝隙天线30设置在电介质板20的顶表面上。突起构件21 在电介质板20的底面的周边部设置有与电介质板20分离的部件，以防止异常放电。通过调整突起部件21的圆筒部的外周面22与处理室2的侧壁的内周面5a之间的间隙，调整电介质板20附近的电场强度，突出部件21的圆筒部的厚度。

10. 发明授权

US08617865B2 Tannase, gene encoding same, and process for producing same 有权
标题翻译：鞣酸酶，编码基因的基因及其制备方法
公开(公告)号：US08617865B2
公开(公告)日：2013-12-31
申请号：US13124510
申请日：2009-10-02
申请人： Megumi Nakagawa , Naoki Matsumoto , Hitoshi Amano , Shotaro Yamaguchi
发明人： Megumi Nakagawa , Naoki Matsumoto , Hitoshi Amano , Shotaro Yamaguchi
IPC分类号： C12N9/14
CPC分类号： C12N9/18 , C12P7/42
摘要： Disclosed is a thermostable tannase derived from a microorganism. Specifically disclosed is a thermostable tannase derived from Aspergillus awamori or Aspergillus niger. A preferred embodiment of the tannase has the following chemoenzymatic properties: (1) activity: to act on a depside bond to thereby cause hydrolysis; (2) molecular weight: about 230,000 Da (as measured by gel filtration); and (3) thermal stability: stable at a temperature up to 65° C. (pH 5.0, 30 min.)
摘要翻译：公开了一种衍生自微生物的热稳定性鞣酸酶。具体公开了源自泡盛曲霉或黑曲霉的热稳定性鞣酸酶。鞣酸酶的优选实施方案具有以下化学酶学性质：（1）活性：作用于脱附键从而引起水解; （2）分子量：约230,000Da（通过凝胶过滤测量）; 和（3）热稳定性：在高达65℃的温度下稳定（pH5.0,30分钟）

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