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1. 发明授权

US08771537B2 Plasma treatment device and plasma treatment method 有权
标题翻译：等离子处理装置和等离子体处理方法
公开(公告)号：US08771537B2
公开(公告)日：2014-07-08
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

2. 发明申请

US20110114261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110114261A1
公开(公告)日：2011-05-19
申请号：US13003102
申请日：2009-06-16
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
IPC分类号： C23F1/08
CPC分类号： H01L21/6719 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01L21/67126 , H01L21/68785
摘要： A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
摘要翻译：等离子体处理装置包括处理容器，其中对待处理的基板进行等离子体处理，保持台设置在处理容器中并保持在其上待处理的基板，电介质板，其设置在位置面向保持阶段并将微波传输到处理容器中，以及反应气体供应单元，其向保持阶段保持的待处理基板的中心区域提供用于等离子体处理的反应气体。这里，反应气体供给单元包括喷射器基座，该喷射器基座设置在比介质板的面向保持台的壁面更靠内侧的位置。在喷射器基座中形成供应孔，其将用于等离子体处理的反应气体供应到处理容器中。

3. 发明申请

US20120012556A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20120012556A1
公开(公告)日：2012-01-19
申请号：US12919293
申请日：2009-02-26
申请人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
发明人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
摘要翻译：等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同温度。

4. 发明授权

US09263298B2 Plasma etching apparatus and plasma etching method 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US09263298B2
公开(公告)日：2016-02-16
申请号：US12919293
申请日：2009-02-26
申请人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
发明人： Naoki Matsumoto , Kazuto Takai , Reika Ko , Nobuyuki Okayama
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/3213 , H01J37/32 , H01L21/67
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
摘要翻译：等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同温度。

5. 发明授权

US08800484B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08800484B2
公开(公告)日：2014-08-12
申请号：US13003102
申请日：2009-06-16
申请人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
发明人： Naoki Matsumoto , Kazuyuki Kato , Masafumi Shikata , Kazuto Takai
IPC分类号： C23C16/511 , H01L21/67 , H01J37/32 , H01L21/687 , C23F1/00
CPC分类号： H01L21/6719 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01L21/67126 , H01L21/68785
摘要： A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.
摘要翻译：等离子体处理装置包括处理容器，其中对待处理的基板进行等离子体处理，保持台设置在处理容器中并保持在其上待处理的基板，电介质板，其设置在位置面向保持阶段并将微波传输到处理容器中，以及反应气体供应单元，其向保持阶段保持的待处理基板的中心区域提供用于等离子体处理的反应气体。这里，反应气体供给单元包括喷射器基座，该喷射器基座设置在比介质板的面向保持台的壁面更靠内侧的位置。在喷射器基座中形成供应孔，其将用于等离子体处理的反应气体供应到处理容器中。

6. 发明申请

US20120190208A1 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20120190208A1
公开(公告)日：2012-07-26
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

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