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1. 发明授权

US08771537B2 Plasma treatment device and plasma treatment method 有权
标题翻译：等离子处理装置和等离子体处理方法
公开(公告)号：US08771537B2
公开(公告)日：2014-07-08
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

2. 发明申请

US20050254504A1 Gateway apparatus 失效
标题翻译：网关设备
公开(公告)号：US20050254504A1
公开(公告)日：2005-11-17
申请号：US10936584
申请日：2004-09-09
申请人： Toshihisa Ozu
发明人： Toshihisa Ozu
IPC分类号： H04L12/66 , H04L1/00 , H04L12/26 , H04L12/46
CPC分类号： H04L43/00 , H04L43/0817
摘要： When a device alarm is raised in a signal processing unit 104 of a gateway apparatus 100, a transmit CH-AIS data generating unit 109 generates CH-AIS data including alarm information provided on a trunk-channel by trunk-channel basis, a packet assembling unit 105 packetizes the generated CH-AIS data into CH-AIS packets and transmits them to another gateway apparatus 100 which is disposed opposite to the gateway apparatus 100. The other gateway apparatus 100 then analyzes the CH-AIS packets received thereby by using a received CH-AIS data analysis unit 110, and notifies AIS provided on a trunk-channel by trunk-channel basis to an exchange thereof via an AIS trunk output unit 101.
摘要翻译：当网关设备100的信号处理单元104中发生设备报警时，发送CH-AIS数据生成单元109生成包括通过中继信道基于中继信道提供的告警信息的CH-AIS数据，分组组合单元105将生成的CH-AIS数据分组到CH-AIS分组中，并将它们发送到与网关装置100相对设置的另一网关装置100。另一个网关装置100然后通过使用接收到的CH-AIS数据分析单元110来分析接收到的CH-AIS分组，并通过中继线信道将在中继线信道上提供的AIS通过AIS干线输出单元进行交换 101。

3. 发明授权

US08969210B2 Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method 有权
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和半导体装置的制造方法
公开(公告)号：US08969210B2
公开(公告)日：2015-03-03
申请号：US13232160
申请日：2011-09-14
申请人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
发明人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/762 , H01L21/768 , H01L29/66
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32706 , H01L21/31116 , H01L21/76224 , H01L21/76897 , H01L29/6653 , H01L29/6656
摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
摘要翻译：提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

4. 发明申请

US20130102157A1 ETCHING METHOD AND DEVICE 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US20130102157A1
公开(公告)日：2013-04-25
申请号：US13807550
申请日：2011-04-19
申请人： Toshihisa Ozu
发明人： Toshihisa Ozu
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/334 , H01L21/31116 , H01L21/76834 , H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.
摘要翻译：当蚀刻形成在基板上的绝缘膜时，蚀刻方法可以防止在绝缘膜下产生的氧等离子体的不利影响。蚀刻方法包括：第一蚀刻步骤，用于将绝缘膜暴露于已经变成等离子体的处理气体中，以将绝缘膜蚀刻到厚度方向的一部分; 用于将完成第一蚀刻后残留的绝缘膜暴露于氧等离子体以去除沉积在剩余绝缘膜的表面上的沉积材料的沉积材料去除步骤; 以及将剩余绝缘膜暴露于已经变成等离子体以处理剩余绝缘膜的处理气体的第二蚀刻。

5. 发明申请

US20130071955A1 PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻法
公开(公告)号：US20130071955A1
公开(公告)日：2013-03-21
申请号：US13234449
申请日：2011-09-16
申请人： Hiroki Kintaka , Toshihisa Ozu , Masahiko Takahashi
发明人： Hiroki Kintaka , Toshihisa Ozu , Masahiko Takahashi
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01J37/32238 , H01J37/3244 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20
摘要： A method for processing a substrate to form a desired pattern by an etching process after forming a mask pattern over the substrate includes the steps of: forming two layers over the substrate; measuring a width of the mask pattern or an etched pattern of one of the two layers; and adjusting a flow rate of any one of HBr and other gases, used in the etching process, based on the measured width. The two layers may include a silicon nitride layer and an organic dielectric layer.
摘要翻译：在衬底上形成掩模图案之后通过蚀刻工艺处理衬底以形成期望图案的方法包括以下步骤：在衬底上形成两层; 测量所述掩模图案的宽度或所述两层之一的蚀刻图案; 并且基于所测量的宽度调节在蚀刻工艺中使用的HBr和其它气体中的任何一种的流速。两层可以包括氮化硅层和有机电介质层。

6. 发明授权

US08753527B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US08753527B2
公开(公告)日：2014-06-17
申请号：US13128951
申请日：2009-11-11
申请人： Tetsuya Nishizuka , Masahiko Takahashi , Toshihisa Ozu
发明人： Tetsuya Nishizuka , Masahiko Takahashi , Toshihisa Ozu
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32192 , H01L21/3065 , H01L21/76229
摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.
摘要翻译：等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。

7. 发明申请

US20120064726A1 PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：等离子体蚀刻装置，等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US20120064726A1
公开(公告)日：2012-03-15
申请号：US13232160
申请日：2011-09-14
申请人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
发明人： Toshihisa Nozawa , Masaru Sasaki , Jun Hashimoto , Shota Yoshimura , Toshihisa Ozu , Tetsuya Nishizuka
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32192 , H01J37/32706 , H01L21/31116 , H01L21/76224 , H01L21/76897 , H01L29/6653 , H01L29/6656
摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.
摘要翻译：提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

8. 发明申请

US20050259669A1 Media gateway device 审中-公开
标题翻译：媒体网关设备
公开(公告)号：US20050259669A1
公开(公告)日：2005-11-24
申请号：US10988598
申请日：2004-11-16
申请人： Toshihisa Ozu
发明人： Toshihisa Ozu
IPC分类号： H04L12/713 , H04L20060101 , H04L12/24 , H04L12/66 , H04L29/14 , H04M7/00 , H04L12/56
CPC分类号： H04L12/66 , H04L41/0631 , H04L69/40 , H04M3/08 , H04M7/1255
摘要： A gateway device is set to the doubled construction of the media gateway of the normal operation and the media gateway for redundancy. When a device failure is generated in the above media gateway of the normal operation, a signal path is controlled so as to be switched to the media gateway for redundancy by a switching unit. The IP address and the MAC address possessed in the above media gateway of the normal operation are transferred to the media gateway for redundancy simultaneously with the switching from the above media gateway of the normal operation to the media gateway for redundancy.
摘要翻译：网关设备被设置为正常操作的媒体网关和媒体网关的冗余结构。当在正常操作的上述媒体网关中产生设备故障时，控制信号路径以便切换到媒体网关，以便通过交换单元进行冗余。将正常操作的上述媒体网关中的IP地址和MAC地址与正常操作的上述媒体网关切换到媒体网关进行冗余同时传送到媒体网关以实现冗余。

9. 发明授权

US08835320B2 Etching method and device 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US08835320B2
公开(公告)日：2014-09-16
申请号：US13807550
申请日：2011-04-19
申请人： Toshihisa Ozu
发明人： Toshihisa Ozu
IPC分类号： H01L21/311 , H01L21/8238 , H01J37/32 , H01L29/66 , H01L21/3065 , H01L29/78 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/334 , H01L21/31116 , H01L21/76834 , H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.
摘要翻译：当蚀刻形成在基板上的绝缘膜时，蚀刻方法可以防止在绝缘膜下产生的氧等离子体的不利影响。蚀刻方法包括：第一蚀刻步骤，用于将绝缘膜暴露于已经变成等离子体的处理气体中，以将绝缘膜蚀刻到厚度方向的一部分; 用于将完成第一蚀刻后残留的绝缘膜暴露于氧等离子体以去除沉积在剩余绝缘膜的表面上的沉积材料的沉积材料去除步骤; 以及将剩余绝缘膜暴露于已经变成等离子体以处理剩余绝缘膜的处理气体的第二蚀刻。

10. 发明申请

US20120190208A1 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20120190208A1
公开(公告)日：2012-07-26
申请号：US13391196
申请日：2010-08-10
申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
发明人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/31116 , H01L21/32137
摘要： Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
摘要翻译：改善基板表面上的等离子体工艺的均匀性。在通过从处理容器中导入的处理气体产生等离子体来处理基板的等离子体处理装置中，导入到处理容器内的基板的中心部分的加工气体的导入量与导入量在等离子体处理中改变了被引入处理容器内的基板周边部分的处理气体。因此，可以减小衬底的中心部分和周边部分之间的蚀刻速率等的变化。因此，提高了衬底表面上的等离子体处理的均匀性。

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