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1. 发明授权

US06730596B1 Method of and apparatus for forming interconnection 失效
标题翻译：形成互连的方法和装置
公开(公告)号：US06730596B1
公开(公告)日：2004-05-04
申请号：US09868140
申请日：2001-06-15
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
IPC分类号： H01L214763
CPC分类号： H05K3/4061 , B05C11/08 , C23C18/02 , C23C18/08 , H01L21/288 , H01L21/6715 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H05K1/0306 , H05K3/045 , H05K3/102 , H05K2201/0257 , H01L2924/00
摘要： The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.
摘要翻译：本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。该方法具有如下步骤：制备在其表面形成有微细凹槽的基材，将至少部分由金属制成的超微粒子分散在预定溶剂中，制备超细颗粒分散液体，将超细颗粒分散液体供应到细小凹槽加热衬底以熔融和粘合金属，并化学机械抛光衬底的表面以从中除去过量附着的金属。根据本发明，可以使用便宜的材料稳定地沉积质量好的互连金属。

2. 发明授权

US06972256B2 Method and apparatus for forming thin film of metal 失效
标题翻译：用于形成金属薄膜的方法和装置
公开(公告)号：US06972256B2
公开(公告)日：2005-12-06
申请号：US09890330
申请日：2000-11-29
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
IPC分类号： C23C18/14 , H01L21/288 , H01L21/768 , H05K3/10 , H01L21/44
CPC分类号： H05K3/105 , C23C18/14 , H01L21/288 , H01L21/76885
摘要： The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.
摘要翻译：本发明涉及在半导体或其他基板的表面上形成铜，银等薄金属膜的方法和装置。一种形成薄金属膜的方法包括制备分散在预定溶剂中的含金属有机化合物的分散液体，将分散的液体涂布在基材表面上并蒸发溶剂以形成涂层，能量束到涂层，以分解被包含在涂层中的能量束和接合金属的区域中的包覆层中的有机物质。根据本发明，可以形成薄膜金属膜高质量，高稳定地品质。在高度集成的半导体电路中用作金属互连的金属薄膜有助于制造半导体器件的工艺的进展。

3. 发明授权

US06709555B1 Plating method, interconnection forming method, and apparatus for carrying out those methods 失效
标题翻译：电镀方法，互连形成方法以及用于实施这些方法的装置
公开(公告)号：US06709555B1
公开(公告)日：2004-03-23
申请号：US09868524
申请日：2001-06-19
申请人： Naoaki Ogure , Akira Fukunaga , Hiroshi Nagasawa
发明人： Naoaki Ogure , Akira Fukunaga , Hiroshi Nagasawa
IPC分类号： C25D1700
CPC分类号： H01L21/76843 , C23C18/06 , C23C18/08 , C23C18/1653 , H01L21/288 , H01L21/67034 , H01L21/67103 , H01L21/67109 , H01L21/6715 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a plating method for use in forming a liner for plating in a conductor-embedding fine recess that is defined in a surface of a semiconductor substrate, and an interconnection forming method for use in forming an interconnection using such a liner, and characterized by reducing an organic metal compound in a nonaqueous solvent to plate a surface of a base material with metal. The plating method can easily be used similarly to an aqueous electroless plating process and is capable of forming a defect-free sound metal plated layer on the surface of a substrate which has a fine recess or the like for embedding a conductor therein, and the interconnection forming method is capable of forming an embedded interconnection that comprises a defect-free sound electric conductor in a fine recess.
摘要翻译：本发明涉及一种用于形成在半导体衬底的表面中限定的导体嵌入微细凹槽中的电镀衬层的电镀方法，以及用于使用这种衬垫形成互连的互连形成方法，其特征在于，在非水溶剂中还原有机金属化合物，用金属对基材的表面进行平版化。电镀方法可以容易地与含水化学镀方法相同地使用，并且能够在具有用于将导体嵌入其中的细凹槽等的基板的表面上形成无缺陷的金属电镀层，并且互连形成方法能够在细凹槽中形成包括无缺陷声导体的嵌入式互连。

4. 发明申请

US20080271911A1 Submerged Electrode and Material Thereof 审中-公开
标题翻译：浸没电极及其材料
公开(公告)号：US20080271911A1
公开(公告)日：2008-11-06
申请号：US10567151
申请日：2004-08-04
申请人： Naoaki Ogure , Manabu Tsujimura
发明人： Naoaki Ogure , Manabu Tsujimura
IPC分类号： H01R11/00 , H05K1/00
CPC分类号： C02F1/46109 , C02F1/46114 , C02F2001/46138 , C02F2001/46152 , C02F2101/308 , C02F2103/34 , Y10T29/49117
摘要： [Problems] To provide an electrode that is stable in liquid and is capable of processing a large volume of liquid and a small electrode that is capable of processing a large volume of liquid at high speed; provide a liquid processor and method of processing liquid in which the electrode is used; provide and electrode material being hard to be damaged by thermal stress; and provide an electrode, liquid processor and method of processing liquid in which the electrode material is used.[Means for solving problems] An electrode of configuration resulting from coating solid pieces of 5 to 60 mm size with electrically conductive diamond, supporting them on supports and bringing the same into contact with each other so as to realize current passage as a whole is used in various electrochemical process. Also, an electrode including (1) electrically conductive substrate, (2) covering layer covering the electrically conductive substrate and (3) electrically conductive diamond particles fixed on the covering layer, wherein each of the electrically conductive diamond particles is partially brought into contact with the electrically conductive substrate and another portion thereof is partially exposed on the surface of the covering layer. Further, an electrode material, wherein an entire side surface of columnar or tubular substrate is coated with electrically conductive diamond is used.
摘要翻译： [问题]提供一种在液体中稳定并能够加工大量液体的电极和能够高速加工大量液体的小电极; 提供液体处理器和处理使用电极的液体的方法; 提供并且难以被热应力损坏的电极材料; 并提供电极，液体处理器和处理使用电极材料的液体的方法。 [解决问题的方法]使用导电金刚石涂覆5〜60mm尺寸的实心片，将其支撑在支撑体上并使其彼此接触以实现整体的电流通过的结构电极被使用在各种电化学过程中。此外，包括（1）导电基板，（2）覆盖导电基板的覆盖层的电极和（3）固定在覆盖层上的导电金刚石颗粒，其中每个导电金刚石颗粒部分地与导电性基板和其另一部分部分露出在覆盖层的表面上。此外，使用其中柱状或管状基板的整个侧表面涂覆有导电金刚石的电极材料。

5. 发明授权

US06391775B1 Method of forming embedded copper interconnections and embedded copper interconnection structure 失效
标题翻译：形成嵌入式铜互连和嵌入式铜互连结构的方法
公开(公告)号：US06391775B1
公开(公告)日：2002-05-21
申请号：US09660411
申请日：2000-09-12
申请人： Naoaki Ogure , Hiroaki Inoue
发明人： Naoaki Ogure , Hiroaki Inoue
IPC分类号： H01L2144
CPC分类号： H01L21/7684 , H01L21/288 , H01L21/76888 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： Embedded interconnections of copper are formed by forming an insulating layer, forming embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.
摘要翻译：铜的嵌入式互连通过形成绝缘层而形成，在绝缘层中形成铜的嵌入互连，根据化学机械抛光使绝缘层的暴露的上表面和铜共面的嵌入式互连的暴露表面，以及形成在铜的嵌入式互连的暴露表面上的保护性银膜。在现有的绝缘层上重复这些步骤，从而产生多层铜的嵌入互连。根据浸镀法，铜的嵌入互连的暴露表面镀银。

6. 发明授权

US5820649A Method of and apparatus for continuously producing a solid material 失效
标题翻译：连续生产固体材料的方法和设备
公开(公告)号：US5820649A
公开(公告)日：1998-10-13
申请号：US843185
申请日：1997-04-14
申请人： Naoaki Ogure , Kazuyoshi Terashima
发明人： Naoaki Ogure , Kazuyoshi Terashima
IPC分类号： C30B29/06 , C30B15/00 , C30B15/02 , C30B15/20 , H01L31/04 , C03B20/00
CPC分类号： C30B29/06 , C30B15/002 , C30B15/02 , Y10T117/1044 , Y10T117/1052 , Y10T117/1056
摘要： A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.
摘要翻译：将诸如熔融硅的液体材料储存在坩埚中。将与坩埚中的液体材料相同并保持在相同条件下的液体材料从辅助坩埚连续供应到坩埚中，以保持坩埚中的液体材料的表面水平恒定。当液体材料固化成诸如单晶硅的带状薄腹板的固体材料时，液体材料以预定速度从坩埚中连续拉起。

7. 发明授权

US5705230A Method for filling small holes or covering small recesses in the surface of substrates 失效
标题翻译：填充小孔或覆盖基板表面的小凹槽的方法
公开(公告)号：US5705230A
公开(公告)日：1998-01-06
申请号：US324460
申请日：1994-10-17
申请人： Toru Matanabe , Hirokazu Ezawa , Masahiro Miyata , Yukio Ikeda , Manabu Tsujimura , Hiroaki Inoue , Takeyuki Odaira , Naoaki Ogure
发明人： Toru Matanabe , Hirokazu Ezawa , Masahiro Miyata , Yukio Ikeda , Manabu Tsujimura , Hiroaki Inoue , Takeyuki Odaira , Naoaki Ogure
IPC分类号： C23C18/34 , C23C18/16 , C23C26/00 , C25D5/18 , C25D5/20 , H01L21/48 , H01L21/768 , H05K3/42 , B05D1/18
CPC分类号： C23C18/1608 , C23C18/1612 , C23C18/1651 , C23C18/1666 , C23C18/1831 , H01L21/486 , H01L21/76877 , H05K3/422
摘要： The improved method comprises contacting a substrate 5 at least once by a liquid containing the elements that compose a pure metal or an alloy with which the small holes or recesses 3a in the substrate 5 are to be filled or covered, whereby the liquid wets the inner surfaces of said small holes or recesses 3a while, at the same time, said pure metal or said alloy is deposited on the surface of said substrate 5. The method is capable of filling small holes or covering small recesses in the surface of the substrate 5 with improved efficiency while, at the same time, it improves the heat resistance and materials stability of the part that contains the formed filling or covering layer.
摘要翻译：改进的方法包括使基底5至少一次由含有构成纯金属的元素的液体或与基底5中的小孔或凹槽3a填充或覆盖的合金相接触，由此液体润湿内部所述小孔或凹部3a的表面，同时所述纯金属或所述合金沉积在所述基板5的表面上。该方法能够填充小孔或覆盖基板5的表面中的小凹槽同时提高了包含形成的填充或覆盖层的部件的耐热性和材料稳定性。

8. 发明授权

US5656542A Method for manufacturing wiring in groove 失效
标题翻译：槽内布线方法
公开(公告)号：US5656542A
公开(公告)日：1997-08-12
申请号：US544453
申请日：1995-10-18
申请人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
发明人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
IPC分类号： H01L21/768 , H01L23/532 , H01L21/26
CPC分类号： H01L21/76873 , H01L21/76843 , H01L21/76858 , H01L21/76877 , H01L23/53242 , H01L23/53247 , H01L2924/0002
摘要： In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
摘要翻译：在根据本发明的半导体器件及其制造方法中，例如，在硅衬底上沉积绝缘膜，并且根据预定的布线图案在绝缘膜中形成凹槽。钛和钯依次沉积在绝缘膜上以分别形成钛膜和钯膜。通过电镀在钯膜上形成银膜，通过研磨形成槽状的银布线层。所得结构在约700℃的温度下退火，并通过使钛膜和钯膜彼此合金化形成金属间化合物。因此，电阻低于铝的掩埋型布线层由银布线层和金属间化合物构成。

9. 发明申请

US20060118598A1 Bonding apparatus and bonding method 审中-公开
标题翻译：接合装置和接合方法
公开(公告)号：US20060118598A1
公开(公告)日：2006-06-08
申请号：US11291838
申请日：2005-12-02
申请人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
发明人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
IPC分类号： B23K1/00 , B23K5/00 , B23K20/14
CPC分类号： B23K20/023 , B23K2101/40
摘要： A bonding apparatus can bond contacts of electronic components directly to each other without the need for solder. The bonding apparatus include a hermetically sealed processing chamber, a plurality of bases for holding at least two workpieces having respective bonding regions in the processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller for controlling a predetermined pressure to be developed in the processing chamber, a heater for heating the workpieces in the processing chamber, and a bonding unit for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber.
摘要翻译：接合装置可以将电子部件的触点彼此直接接合而不需要焊料。接合装置包括密封处理室，用于在处理室中保持具有各自的接合区域的至少两个工件的多个基座，用于引入处理气体以将接合区域引入处理室的气体入口，压力控制器用于控制处理室中要显影的预定压力，用于加热处理室中的工件的加热器，以及用于在处理室中将工件的接合区域彼此压合并粘合的接合单元。

10. 发明授权

US06921722B2 Coating, modification and etching of substrate surface with particle beam irradiation of the same 失效
标题翻译：用其粒子束照射进行涂层，改性和蚀刻基材表面
公开(公告)号：US06921722B2
公开(公告)日：2005-07-26
申请号：US09866843
申请日：2001-05-30
申请人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
发明人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
IPC分类号： C23C16/18 , C23C16/452 , C23C16/48 , H01J37/32 , H01L21/285 , H01L21/3213 , H01L21/302
CPC分类号： H01J37/32422 , C23C16/18 , C23C16/452 , C23C16/486 , C23C16/487 , H01J37/3233 , H01L21/28556 , H01L21/32136
摘要： There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.
摘要翻译：提供了在基板的表面上进行表面处理如涂层，变性，改性和蚀刻的方法。该方法包括以下步骤：使表面处理气体与基板的表面接触，并用快速粒子束照射基板的表面，以增强表面和/或表面处理气体的活性，由此有助于表面和气体之间的反应。快速粒子束可以选自电子束，带电粒子束，原子束和分子束。例如，在涂布操作期间，将气体的预定组分元素化学沉积到表面上，并且用颗粒束照射基板的表面的预定部分，以在预定部分上形成涂层。

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