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1. 发明申请

US20060118598A1 Bonding apparatus and bonding method 审中-公开
标题翻译：接合装置和接合方法
公开(公告)号：US20060118598A1
公开(公告)日：2006-06-08
申请号：US11291838
申请日：2005-12-02
申请人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
发明人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
IPC分类号： B23K1/00 , B23K5/00 , B23K20/14
CPC分类号： B23K20/023 , B23K2101/40
摘要： A bonding apparatus can bond contacts of electronic components directly to each other without the need for solder. The bonding apparatus include a hermetically sealed processing chamber, a plurality of bases for holding at least two workpieces having respective bonding regions in the processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller for controlling a predetermined pressure to be developed in the processing chamber, a heater for heating the workpieces in the processing chamber, and a bonding unit for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber.
摘要翻译：接合装置可以将电子部件的触点彼此直接接合而不需要焊料。接合装置包括密封处理室，用于在处理室中保持具有各自的接合区域的至少两个工件的多个基座，用于引入处理气体以将接合区域引入处理室的气体入口，压力控制器用于控制处理室中要显影的预定压力，用于加热处理室中的工件的加热器，以及用于在处理室中将工件的接合区域彼此压合并粘合的接合单元。

2. 发明申请

US20070289604A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20070289604A1
公开(公告)日：2007-12-20
申请号：US11587974
申请日：2005-04-27
申请人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
发明人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： C23G1/02 , B08B3/00 , G05D23/00 , G05D99/00
CPC分类号： H01L21/76838 , H01L21/02063 , H01L21/02068 , H01L21/67253
摘要： To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10. The process gas supply system 30 has an evaporator 32 keeping liquid material of the reducing organic compound therein and having an evaporating liquid surface S, a process gas pipe 18 for directing the process gas containing the reducing organic compound evaporated in the evaporator 32 into the process chamber 10, and a throttle element 40 disposed in the process gas pipe 18 for controlling the flow rate of the process gas to be supplied to the process chamber 10 by adjusting the opening of the throttle element 40. The opening of the throttle element 40 is so set that the pressure variation in the evaporator 32 can be maintained within a prescribed range.
摘要翻译：提供一种能够提供含有蒸发还原性有机化合物的气体的装置和方法，同时严格控制其流速来处理基板上的金属表面，而不会导致形成半导体元件的各种类型的膜的劣化简单的设备配置。该装置包括用于将基板W保持在其中的处理室10，气密的处理室10，用于控制处理室10中的压力的抽空控制系统20以及用于提供含有将有机化合物还原成处理室10。工艺气体供给系统30具有：蒸发器32，其中还原有机化合物的液体材料保持在其中并具有蒸发的液体表面S;一个工艺气体管道18，用于将含有在蒸发器32中蒸发的还原性有机化合物的工艺气体引导到过程设置在处理气体管道18中的节流元件40，用于通过调节节流元件40的开口来控制供给处理室10的处理气体的流量。节流元件40的开度被设定为使得蒸发器32中的压力变化可以保持在规定范围内。

3. 发明授权

US08205625B2 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US08205625B2
公开(公告)日：2012-06-26
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： B08B5/00 , B08B13/00
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： A surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA）而不用等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

4. 发明申请

US20100097607A1 Film Thickness Measuring Method and Substrate Processing Apparatus 审中-公开
标题翻译：薄膜厚度测量方法和基板处理设备
公开(公告)号：US20100097607A1
公开(公告)日：2010-04-22
申请号：US11989763
申请日：2006-08-01
申请人： Akira Susaki , Shohei Shima , Yukio Fukunaga , Hideki Tateishi , Junko Mine
发明人： Akira Susaki , Shohei Shima , Yukio Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： G01B11/06 , C23C14/52 , B05C11/00 , B01J19/00 , G01J4/00 , C23G1/02
CPC分类号： G01B11/0641
摘要： A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference Δ, measured by ellipsometry, based on a predetermined relationship between the phase difference Δ and the thickness of the oxide film or thin film of the metal or alloy.
摘要翻译：膜厚测量方法可以在更短的时间内更简单地进行氧化膜厚度的测量。薄膜厚度测量方法包括基于相位差＆Dgr之间的预定关系，通过使用通过椭偏仪测量的相位差＆Dgr i来确定金属或合金的氧化物膜或薄膜的厚度; 以及金属或合金的氧化膜或薄膜的厚度。

5. 发明申请

US20080124932A1 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US20080124932A1
公开(公告)日：2008-05-29
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： H01L21/302 , B08B13/00 , B08B5/00 , C23F1/08
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： An surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA），而不需要进行等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

6. 发明授权

US4610770A Method and apparatus for sputtering 失效
标题翻译：溅射的方法和装置
公开(公告)号：US4610770A
公开(公告)日：1986-09-09
申请号：US686005
申请日：1984-12-24
申请人： Hiroshi Saito , Hideki Tateishi , Shigeru Kobayashi , Susumu Aiuchi , Yasumichi Suzuki , Masao Sakata , Hideaki Shimamura , Tsuneaki Kamei
发明人： Hiroshi Saito , Hideki Tateishi , Shigeru Kobayashi , Susumu Aiuchi , Yasumichi Suzuki , Masao Sakata , Hideaki Shimamura , Tsuneaki Kamei
IPC分类号： C23C14/36 , C23C14/34 , C23C14/35 , C23C14/46 , H01J37/34 , H01L21/203 , H01L21/31
CPC分类号： H01J37/32192 , C23C14/34 , C23C14/46 , H01J37/3266 , H01J37/34
摘要： A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).
摘要翻译：用于产生镜面磁场的一对磁体设置在承载目标的电极结构的外侧。来自微波源的微波被引入并由用于产生高密度等离子体的反射镜磁场限定的空间中。当在靶的表面的较宽区域上保持这种高密度等离子体时，施加基本上垂直于靶的表面的电场，以溅射目标材料。当在处理室外部形成的高密度等离子体被引导以朝向处理室内的目标区域迁移时，可以选择等离子体产生的优化条件。从靶的整个表面溅射材料的能力增加了基板上的膜沉积速率，并提高了目标利用率（沉积在基板上的材料的量/目标的可用面积）。

7. 发明申请

US20110155581A1 METHOD FOR FORMING METAL FILM 有权
标题翻译：形成金属膜的方法
公开(公告)号：US20110155581A1
公开(公告)日：2011-06-30
申请号：US12977592
申请日：2010-12-23
申请人： Akira SUSAKI , Tsutomu Nakada , Hideki Tateishi
发明人： Akira SUSAKI , Tsutomu Nakada , Hideki Tateishi
IPC分类号： C25D5/10 , C25D3/02 , C25D3/38 , C25D3/12 , C25D5/34 , C25D5/12
CPC分类号： C25D3/38 , C25D3/12 , C25D5/38 , C25D5/42 , C25D5/44
摘要： A metal film-forming method is capable of forming a metal film on a surface of a base metal film, formed on a surface of a substrate, with sufficient adhesion to the base metal film even when a natural oxide film is formed on the surface of the base metal film. The metal film-forming method includes: preparing a substrate having a base metal film formed on a surface; and carrying out electroplating of the substrate using the base metal film as a cathode and another metal as an anode while immersing the substrate in a solution containing a metal complex and a reducing material, both dissolved in a solvent, to form a metal film, deriving from a metal contained in the metal complex, on the surface of the base metal film.
摘要翻译：金属膜形成方法能够在形成在基板表面上的基底金属膜的表面上形成金属膜，即使当在基体金属膜的表面上形成自然氧化膜时，也能够对基底金属膜具有足够的粘合力贱金属膜。金属膜形成方法包括：制备在表面上形成有贱金属膜的基板; 并且使用基底金属膜作为阴极和另一种金属作为阳极进行基板的电镀，同时将基板浸入含有溶解在溶剂中的金属络合物和还原材料的溶液中以形成金属膜，得到从包含在金属络合物中的金属在基底金属膜的表面上。

8. 发明授权

US07709394B2 Substrate processing method and apparatus fabrication process of a semiconductor device 有权
标题翻译：半导体器件的衬底处理方法和器件制造工艺
公开(公告)号：US07709394B2
公开(公告)日：2010-05-04
申请号：US11687738
申请日：2007-03-19
申请人： Hidenori Miyoshi , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
发明人： Hidenori Miyoshi , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.
摘要翻译：一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

9. 发明申请

US20070224725A1 SUBSTRATE PROCESSING METHOD AND APPARATUS FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的基板处理方法和装置制造工艺
公开(公告)号：US20070224725A1
公开(公告)日：2007-09-27
申请号：US11687738
申请日：2007-03-19
申请人： Hidenori MIYOSHI , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
发明人： Hidenori MIYOSHI , Kenji Ishikawa , Yukio Takigawa , Yoshihiro Nakata , Hideki Tateishi
IPC分类号： H01L51/40 , H01L21/00
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.
摘要翻译：一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

10. 发明授权

US4401539A Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure 失效
标题翻译：用于溅射装置的溅射阴极结构，用于控制由所述溅射阴极结构产生的磁通量的方法，以及使用所述溅射阴极结构形成膜的方法
公开(公告)号：US4401539A
公开(公告)日：1983-08-30
申请号：US343858
申请日：1982-01-29
申请人： Katsuo Abe , Shigeru Kobayashi , Tsuneaki Kamei , Hideki Tateishi , Susumu Aiuchi
发明人： Katsuo Abe , Shigeru Kobayashi , Tsuneaki Kamei , Hideki Tateishi , Susumu Aiuchi
IPC分类号： H01J37/34 , C23C15/00
CPC分类号： H01J37/3426 , H01J37/3408 , H01J37/3458 , H01J37/347
摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.
摘要翻译：公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度）以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

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