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1. 发明申请

US20100090196A1 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20100090196A1
公开(公告)日：2010-04-15
申请号：US12654016
申请日：2009-12-08
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L29/66
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth Layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层三层）被形成为没有应变的第二侧阻挡层。

2. 发明申请

US20070194299A1 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20070194299A1
公开(公告)日：2007-08-23
申请号：US11444420
申请日：2006-06-01
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

3. 发明授权

US07968868B2 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07968868B2
公开(公告)日：2011-06-28
申请号：US12654016
申请日：2009-12-08
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

4. 发明授权

US07663139B2 Optical semiconductor device and manufacturing method of the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07663139B2
公开(公告)日：2010-02-16
申请号：US11444420
申请日：2006-06-01
申请人： Nami Yasuoka , Kenichi Kawaguchi
发明人： Nami Yasuoka , Kenichi Kawaguchi
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/0352 , H01L31/035236
摘要： A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.
摘要翻译：在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层）每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

5. 发明授权

US07875946B2 Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
标题翻译：导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器
公开(公告)号：US07875946B2
公开(公告)日：2011-01-25
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

6. 发明申请

US20060273421A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20060273421A1
公开(公告)日：2006-12-07
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

7. 发明申请

US20110068428A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20110068428A1
公开(公告)日：2011-03-24
申请号：US12926484
申请日：2010-11-22
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

8. 发明授权

US06943422B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US06943422B2
公开(公告)日：2005-09-13
申请号：US10624553
申请日：2003-07-23
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

9. 发明授权

US06906308B2 Semiconductor light receiving device in which optical and electric signal are propagated at matched velocities 失效
标题翻译：其中光和电信号以匹配的速度传播的半导体光接收装置
公开(公告)号：US06906308B2
公开(公告)日：2005-06-14
申请号：US10106188
申请日：2002-03-27
申请人： Nami Yasuoka , Haruhisa Soda
发明人： Nami Yasuoka , Haruhisa Soda
IPC分类号： G02B6/42 , G01J5/08 , G02B6/12 , G02B6/43 , H01L31/00 , H01L31/0232 , H01L31/0304 , H01L31/10 , H01L31/105 , H01L31/18
CPC分类号： H01L31/1844 , G02B6/12004 , G02B6/43 , G02B2006/12195 , H01L31/02325 , H01L31/03046 , H01L31/105 , Y02E10/544 , Y02P70/521
摘要： A plurality of semiconductor devices are disposed in a line on the surface of a supporting substrate. Each semiconductor device is adapted to generate an electric signal depending on the intensity of incident light. Adjacent semiconductor devices are optically coupled by an interconnecting optical waveguide so that light can pass through the semiconductor device one by one in a direction from a first stage closest to an input end to a last stage. An electric signal transmission line is formed of a pair of conductors connected to the semiconductor devices so that the electric signal generated by the semiconductor devices can propagate. One conductor of the pair of conductors of the electric signal transmission line is formed so as to extend in the air above the supporting substrate between adjacent semiconductor devices.
摘要翻译：多个半导体器件以支持衬底的表面上的直线布置。每个半导体器件适于根据入射光的强度产生电信号。相邻的半导体器件通过互连光波导光学耦合，使得光可以在从最接近输入端到最后级的第一级的方向上一个接一个地穿过半导体器件。电信号传输线由连接到半导体器件的一对导体形成，使得由半导体器件产生的电信号可以传播。电信号传输线的一对导体中的一个导体形成为在相邻的半导体器件之间的支撑衬底上方的空气中延伸。

10. 发明授权

US06710378B1 Semiconductor light reception device of end face light incidence type 有权
标题翻译：端面光入射型半导体光接收装置
公开(公告)号：US06710378B1
公开(公告)日：2004-03-23
申请号：US09645876
申请日：2000-08-25
申请人： Masao Makiuchi , Nami Yasuoka , Haruhisa Soda , Takuya Fujii
发明人： Masao Makiuchi , Nami Yasuoka , Haruhisa Soda , Takuya Fujii
IPC分类号： H01L31109
CPC分类号： G02B6/42 , G02B6/12004 , H01L31/02327
摘要： A photo sensor is formed in a partial area of the principal surface of a substrate. The photo sensor includes a light reception layer parallel to the principal surface, the light reception layer being made of semiconductor and generating carriers in response to received light. A light waveguide is formed in a partial area of the principal surface of the substrate, the light waveguide propagating light in a direction parallel to the principal surface and introducing light into the light reception layer. A semi-insulating semiconductor film covers side faces of the photo sensor. A pair of electrodes flows current into the light reception layer of the photo sensor in a thickness direction of the light reception layer. A semiconductor light reception device having a structure suitable for high-speed operation and easy to manufacture is provided.
摘要翻译：光传感器形成在基板的主表面的局部区域中。光传感器包括平行于主表面的光接收层，光接收层由半导体制成并响应于接收的光产生载体。光波导形成在基板的主表面的局部区域中，光波导在平行于主表面的方向上传播光，并将光引入光接收层。半绝缘半导体膜覆盖光传感器的侧面。一对电极在光接收层的厚度方向上流入光传感器的光接收层。提供了具有适合于高速运行且易于制造的结构的半导体光接收装置。

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