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    • 2. 发明授权
    • Semiconductor light reception device of end face light incidence type
    • 端面光入射型半导体光接收装置
    • US06710378B1
    • 2004-03-23
    • US09645876
    • 2000-08-25
    • Masao MakiuchiNami YasuokaHaruhisa SodaTakuya Fujii
    • Masao MakiuchiNami YasuokaHaruhisa SodaTakuya Fujii
    • H01L31109
    • G02B6/42G02B6/12004H01L31/02327
    • A photo sensor is formed in a partial area of the principal surface of a substrate. The photo sensor includes a light reception layer parallel to the principal surface, the light reception layer being made of semiconductor and generating carriers in response to received light. A light waveguide is formed in a partial area of the principal surface of the substrate, the light waveguide propagating light in a direction parallel to the principal surface and introducing light into the light reception layer. A semi-insulating semiconductor film covers side faces of the photo sensor. A pair of electrodes flows current into the light reception layer of the photo sensor in a thickness direction of the light reception layer. A semiconductor light reception device having a structure suitable for high-speed operation and easy to manufacture is provided.
    • 光传感器形成在基板的主表面的局部区域中。 光传感器包括平行于主表面的光接收层,光接收层由半导体制成并响应于接收的光产生载体。 光波导形成在基板的主表面的局部区域中,光波导在平行于主表面的方向上传播光,并将光引入光接收层。 半绝缘半导体膜覆盖光传感器的侧面。 一对电极在光接收层的厚度方向上流入光传感器的光接收层。 提供了具有适合于高速运行且易于制造的结构的半导体光接收装置。
    • 5. 发明授权
    • Semiconductor device having flip chip bonding pads matched with pin
photodiodes in a symmetrical layout configuration
    • 具有pin光电二极管的半导体器件
    • US5252852A
    • 1993-10-12
    • US989877
    • 1992-12-11
    • Masao MakiuchiTatsuyuki SanadaOsamu Wada
    • Masao MakiuchiTatsuyuki SanadaOsamu Wada
    • H01L27/144H01L31/0232H01L31/105H01L29/161H01L29/205H01L29/225H01L33/00
    • H01L31/0232H01L27/1443H01L31/105
    • As semiconductor device includes a substrate and first and second semiconductor light receiving elements which are spaced apart and monolithically integrated on the substrate. The light receiving elements each has first and second terminals. A first flip-chip bonding pad is formed on the surface of the device and the device includes a first conductor element which electrically interconnects the first terminals of the elements in series and includes a centrally disposed portion that is electrically connected to the first flip-chip bonding pad. Second and third flip-chip bonding pads are also formed on a surface of the device and elongated electrodes are provided for electrically interconnecting the second terminal of the first light receiving element with the second flip-chip bonding pad and the second terminal of the second light receiving element with the third flip-chip bonding pad. The elongated electrodes have essentially the same length so as to stabilize the optical and electrical balance characteristics of the device and provide a satisfactory dual balance optical receiver.
    • 由于半导体器件包括衬底和间隔开并且整体地集成在衬底上的第一和第二半导体光接收元件。 光接收元件各自具有第一和第二端子。 第一倒装芯片焊盘形成在器件的表面上,器件包括第一导体元件,其将元件的第一端子串联连接并且包括电中连接到第一倒装芯片的中心设置部分 接合垫。 第二和第三倒装芯片接合焊盘也形成在器件的表面上,并且提供细长电极用于将第一光接收元件的第二端子与第二倒装芯片接合焊盘和第二端子的第二端子电互连 接收元件与第三倒装芯片接合焊盘。 细长电极具有基本上相同的长度,以便稳定器件的光学和电气平衡特性并提供令人满意的双重平衡光学接收器。
    • 7. 发明授权
    • Laser diode for producing an output optical beam in a direction
substantially perpendicular to epitaxial layers
    • 用于在基本垂直于外延层的方向上产生输出光束的激光二极管
    • US5309468A
    • 1994-05-03
    • US883027
    • 1992-05-14
    • Masao Makiuchi
    • Masao Makiuchi
    • H01S5/00H01L27/15H01S3/00H01S3/0933H01S5/026H01S5/10H01S5/14H01S5/183H01S3/19
    • H01S5/18388H01S3/0933H01S5/02288H01L27/15H01L33/10H01S5/0262H01S5/14H01S5/18308
    • A laser diode for producing an optical beam in a direction substantially perpendicular to epitaxial layers. The laser diode comprises a substrate, a disc-shaped active layer provided epitaxially on the substrate for producing an optical beam as a result of the stimulated emission, a disc-shaped contact layer provided epitaxially on the active layer for injecting carriers into the active layer, an optical confinement layer provided on the substrate to surround the active layer and the contact layer laterally for confining the optical beam in the active layer, a convex mirror part provided on a lower major surface of the substrate for reflecting back the optical beam such that the optical beam is converged to the active layer, an opposing mirror part provided in correspondence to an upper major surface of the contact layer, a first electrode provided on the contact layer for injecting carriers of a first polarity, a second electrode provided on the lower major surface of the substrate for injecting carriers of a second polarity, and an optical passage provided in correspondence to the spherical surface of the convex lens part for emitting the optical beam as a parallel beam.
    • 一种用于在大致垂直于外延层的方向上产生光束的激光二极管。 激光二极管包括衬底,在衬底上外延设置的用于产生作为受激发射的结果的光束的盘形有源层,在有源层上外延地设置用于将载流子注入到有源层中的盘形接触层 设置在基板上以围绕有源层和接触层的光限制层,用于将光束限制在有源层中;凸面镜部,设置在基板的下主表面上以反射光束,使得 光束会聚到有源层,相对的反射镜部分对应于接触层的上主表面设置,第一电极设置在接触层上,用于注入第一极性的载流子,第二电极设置在下层 用于注入第二极性的载体的基板的主表面以及对应于球形体设置的光学通道 用于将光束发射为平行光束的凸透镜部分的表面。
    • 8. 发明授权
    • Method of producing semiconductor laser
    • 半导体激光器的制造方法
    • US4716125A
    • 1987-12-29
    • US935323
    • 1986-11-26
    • Masao Makiuchi
    • Masao Makiuchi
    • H01S5/00H01S5/042H01L21/203H01L21/223H01L21/225H01L21/265
    • H01S5/0424
    • A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad layer is formed so as to have a property of reducing the diffusion coefficient of impurities, from the lower portion toward the upper portion thereof. Impurity atoms are thermally diffused into the lower clad layer from the top surface thereof to form an N-type region and a P-type region, respectively. The side diffusion fronts of the N- and P-type regions are nearly vertical, and thus a narrow MQW active region is defined by disordered portions of the MQW active layer in the N- and P-type regions. The light and carriers are effectively confined in the narrow active region by using the vertical and transverse double-heterostructures and refractive index differences.
    • 复合半导体激光器包括半绝缘基板,下覆盖层,MQW有源层,上覆盖层和在其顶表面上的两个电极。 上覆盖层形成为具有从下部朝向上部降低杂质的扩散系数的性质。 杂质原子从其顶表面热扩散到下包层中,分别形成N型区和P型区。 N型和P型区域的侧向扩散前沿几乎是垂直的,因此窄的MQW有源区由N和P型区域中的MQW有源层的无序部分限定。 通过使用垂直和横向双异质结构和折射率差异,光和载流子被有效地限制在窄的有源区域中。
    • 9. 发明申请
    • Apparatus and method for detecting target
    • 用于检测目标的装置和方法
    • US20080293154A1
    • 2008-11-27
    • US12071634
    • 2008-02-25
    • Masao Makiuchi
    • Masao Makiuchi
    • G01N21/64
    • G01N21/6428G01N21/07G01N21/645G01N2021/6432G01N2021/6484
    • The target detecting apparatus includes: a first container having a metal inside and containing a fluorescent particle which generates fluorescence on exposure to light and quenches the fluorescence on contacting the metal; a second container having the metal inside and containing a target sample that contains at least the fluorescent particle therein; a centrifugal force giving unit configured to allow the fluorescent particles to be in contact with the metal by giving a centrifugal force to the first container and the second container; a light irradiation unit configured to expose the fluorescent particle contained in each of the first container and the second container to light; and a fluorescence detecting unit configured to detect an intensity of fluorescence generated by the fluorescent particle upon exposure to light from the light irradiation unit.
    • 目标检测装置包括:第一容器,其内部具有金属,并含有在暴露于光时产生荧光并在接触金属时淬灭荧光的荧光颗粒; 第二容器,其内部具有金属,并含有至少含有荧光体的目标样品; 离心力赋予单元,被配置为通过向所述第一容器和所述第二容器施加离心力来允许所述荧光颗粒与所述金属接触; 光照射单元,被配置为将包含在第一容器和第二容器中的每一个中的荧光颗粒曝光; 以及荧光检测单元,被配置为在暴露于来自所述光照射单元的光时检测由所述荧光颗粒产生的荧光的强度。
    • 10. 发明申请
    • Fluorescence detecting device
    • 荧光检测装置
    • US20080142730A1
    • 2008-06-19
    • US11979579
    • 2007-11-06
    • Masao MakiuchiKazuko Matsumoto
    • Masao MakiuchiKazuko Matsumoto
    • G01N21/64
    • G01N21/6408G01N21/645G01N21/6452G01N2021/6484
    • To provide a technology of increasing a sensitivity of detecting fluorescence. A fluorescence detecting device includes an excitation light source emitting excitation light that excites a fluorescence-marked measured object, a first optical path via which the excitation light impinges on the fluorescence-marked measured object, a detector detecting fluorescence emitted when the excitation light impinges on the fluorescence-marked measured object, a second optical path via which the fluorescence gets incident on the detector, and a chopper chopping the excitation light passing through the first optical path and the fluorescence passing through the second optical path, and thus controlling a relative relationship between a passage period of the excitation light and a passage period of the fluorescence.
    • 提供增加检测荧光的灵敏度的技术。 荧光检测装置包括:激发光源,其发射激发荧光标记测量对象的激发光;激发光照射在荧光标记的被测物体上的第一光路;检测器,其检测当激发光照射时发射的荧光 荧光标记测量对象,荧光入射到检测器上的第二光路,以及切割通过第一光路的激发光和通过第二光路的荧光的斩光器,从而控制相关关系 在激发光的通过期间和荧光的通过期间。