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1. 发明授权

US06943422B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US06943422B2
公开(公告)日：2005-09-13
申请号：US10624553
申请日：2003-07-23
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

2. 发明授权

US07507600B2 Semiconductor photodetecting device and method for fabricating the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US07507600B2
公开(公告)日：2009-03-24
申请号：US11180689
申请日：2005-07-14
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： H01L21/00
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.
摘要翻译：一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

3. 发明申请

US20050272180A1 Semiconductor photodetecting device and method for fabricating the same 有权
公开(公告)号：US20050272180A1
公开(公告)日：2005-12-08
申请号：US11180689
申请日：2005-07-14
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Akito Kuramata
IPC分类号： G02B6/122 , G02B6/13 , G02B6/132 , G02B6/42 , H01L21/00 , H01L31/0232 , H01L31/075 , H01L31/10
CPC分类号： G02B6/132 , G02B6/1228 , G02B6/4204 , H01L31/02327
摘要： A semiconductor photodetecting device including a PIN photodiode formed on an SI—InP substrate; a buried optical waveguide portion formed on the SI—InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI—InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.

4. 发明授权

US07875946B2 Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
标题翻译：导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器
公开(公告)号：US07875946B2
公开(公告)日：2011-01-25
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

5. 发明申请

US20060273421A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20060273421A1
公开(公告)日：2006-12-07
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

6. 发明申请

US20110068428A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20110068428A1
公开(公告)日：2011-03-24
申请号：US12926484
申请日：2010-11-22
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

7. 发明授权

US4984032A Semiconductor photodiode 失效
标题翻译：半导体光电二极管
公开(公告)号：US4984032A
公开(公告)日：1991-01-08
申请号：US297391
申请日：1989-01-17
申请人： Shuichi Miura , Takashi Mikawa , Haruhiko Kuwatsuka , Nami Yasuoka
发明人： Shuichi Miura , Takashi Mikawa , Haruhiko Kuwatsuka , Nami Yasuoka
IPC分类号： H01L31/0304 , H01L31/107
CPC分类号： H01L31/03042 , H01L31/03046 , H01L31/1075 , Y02E10/544
摘要： An APD includes a substrate formed of n.sup.+ -type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor, whose aluminum content ratio x is typically within a range from 0.1 to 0.3. A light absorbing layer is formed of an-type GaSb semiconductor on the substrate. An avalanche multiplication layer is formed of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconduct, whose aluminum content ratio x is from 0.02 to 0.1, typically 0.065, so that an ionization rate ratio of positive and negative carriers is essentially maximized by a resonant impact ionization phenomenon. A p.sup.+ -region is formed as a surface layer of n-type Al.sub.x Ga.sub.1-x Sb or Al.sub.x Ga.sub.1-x Sb.sub.y As.sub.1-y semiconductor on the avalanche multiplication layer or directly in the avalanche multiplication layer so as to form a pn junction. Electrodes are formed on the p-type region and the substrate so as to apply a bias voltage to the APD. A light to be detected is injected through the substrate via an opening in the substrate electrode, while producing no carriers therein, into the light absorbing layer. The avalanche multiplication layer generates resonant impact ionization with only the positive carriers from the light absorbing layer, so that low noise and fast operation of the APD is achieved. Furthermore, the APD structure of the invention allows for easy design of an APD.

8. 发明授权

US08772896B2 Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
标题翻译：导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器
公开(公告)号：US08772896B2
公开(公告)日：2014-07-08
申请号：US12926484
申请日：2010-11-22
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

9. 发明申请

US20070216996A1 Optical integrated device and optical module 有权
标题翻译：光集成器件和光模块
公开(公告)号：US20070216996A1
公开(公告)日：2007-09-20
申请号：US11471586
申请日：2006-06-21
申请人： Shinsuke Tanaka , Ken Morito , Haruhiko Kuwatsuka
发明人： Shinsuke Tanaka , Ken Morito , Haruhiko Kuwatsuka
IPC分类号： H01S3/00
CPC分类号： H01S5/026 , G02B2006/12147 , H01S5/0268 , H01S5/0425 , H01S5/4025 , H01S5/50 , H01S5/5027
摘要： An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical coupler for optically coupling signal lights propagated along the plural input optical waveguides to the single output optical waveguide, and a semiconductor optical amplifier gate array formed from a plurality of semiconductor optical amplifiers provided on the input optical waveguides, respectively, and each having an electrode on the surface thereof. The optical integrated device further includes a plurality of signal lines formed on the surface of the optical integrated device in such a manner as to extend from the electrodes to an end face of the optical integrated device on which none of the input ports and the output port is provided.
摘要翻译：光学集成装置包括多个输入光波导，分别连接到设置在光学集成装置的一个端面上的多个输入端口，连接到输出端口的单个输出光波导，用于将传播的信号光光学耦合的光耦合器沿着多个输入光波导到单输出光波导，以及半导体光放大器门阵列，分别由设置在输入光波导上的多个半导体光放大器形成，并且每个具有在其表面上的电极。光学集成器件还包括多个信号线，其形成在光学集成器件的表面上，从电极延伸到光学集成器件的端面，其中没有输入端口和输出端口被提供。

10. 发明授权

US06542286B2 Wavelength converting device and converting method 失效
标题翻译：波长转换装置及其转换方法
公开(公告)号：US06542286B2
公开(公告)日：2003-04-01
申请号：US09759338
申请日：2001-01-16
申请人： Haruhiko Kuwatsuka
发明人： Haruhiko Kuwatsuka
IPC分类号： G02F1365
CPC分类号： G02F1/3536 , G02F2001/01766
摘要： A multi quantum well layer has a lamination of first and second quantum well layers each sandwiched between barrier layers and defining a quantum well. The band gap of the second quantum well layer is larger than the band gap of the first quantum well layer. Current is flowed through the multi quantum well layer from a pair of electrodes. A first optical system input inputting a signal light wave to the multi quantum well layer via an input plane of the multi quantum well layer. A second optical system propagates an output light wave output from an output plane of the multi quantum well layer. A wavelength converting device is provided which can suppress the conversion efficiency from being lowered at a large detuning angular and obtain a relatively high conversion efficiency even at a negative detuning angular frequency.
摘要翻译：多量子阱层具有分别夹在势垒层之间并限定量子阱的第一和第二量子阱层的叠层。第二量子阱层的带隙大于第一量子阱层的带隙。电流从一对电极流过多量子阱层。第一光学系统，通过多量子阱层的输入面输入信号光波到多量子阱层。第二光学系统传播从多量子阱层的输出平面输出的输出光波。提供一种波长转换装置，其可以抑制转换效率在大的失谐角度下降低，并且即使在负失谐角频率下也能获得相对较高的转换效率。

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