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1. 发明申请

US20050269562A1 Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) 审中-公开
标题翻译：薄膜晶体管（TFT）和具有薄膜晶体管（TFT）的平板显示面板
公开(公告)号：US20050269562A1
公开(公告)日：2005-12-08
申请号：US11126300
申请日：2005-05-11
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L51/50 , G02F1/136 , H01L21/336 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H05B33/14
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0036 , H01L51/0055 , H01L51/0541
摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

2. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

3. 发明授权

US07381984B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07381984B2
公开(公告)日：2008-06-03
申请号：US11280761
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L21/336 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/002
摘要： Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained. A flat panel display including the TFT is reliable and has low power consumption.
摘要翻译：提供一种薄膜晶体管和包括该薄膜晶体管的有机电致发光显示器。有机电致发光显示器包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及由在源极和漏极之间形成的路易斯酸化合物和有机半导体层构成的吸电子层。可以容易地积累电荷，使得在半导体层中发生沟道掺杂效应，从而防止形成能量势垒并增加注入到沟道中的载流子的数量。结果，可以获得具有低接触电阻，大量注入载流子和良好的电荷迁移率的TFT。包括TFT的平板显示器是可靠的并且具有低功耗。

4. 发明申请

US20060138405A1 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 审中-公开
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20060138405A1
公开(公告)日：2006-06-29
申请号：US11298211
申请日：2005-12-09
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

5. 发明申请

US20060124924A1 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US20060124924A1
公开(公告)日：2006-06-15
申请号：US11280761
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/002
摘要： Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained. A flat panel display including the TFT is reliable and has low power consumption.
摘要翻译：提供一种薄膜晶体管和包括该薄膜晶体管的有机电致发光显示器。有机电致发光显示器包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及由在源极和漏极之间形成的路易斯酸化合物和有机半导体层构成的吸电子层。可以容易地积累电荷，使得在半导体层中发生沟道掺杂效应，从而防止形成能量势垒并增加注入到沟道中的载流子的数量。结果，可以获得具有低接触电阻，大量注入载流子和良好的电荷迁移率的TFT。包括TFT的平板显示器是可靠的并且具有低功耗。

6. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

7. 发明授权

US07714321B2 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
公开(公告)号：US07714321B2
公开(公告)日：2010-05-11
申请号：US11378011
申请日：2006-03-17
申请人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
发明人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0003 , H01L51/0545
摘要： An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
摘要翻译：公开了一种有机薄膜晶体管，包括该有机薄膜晶体管的平面显示装置和制造该有机薄膜晶体管的方法。在一个实施例中，有机薄膜晶体管包括：i）衬底，ii）设置在衬底上的栅电极，iii）设置在栅电极上的栅极绝缘膜，iv）与每个间隔开的源电极和漏电极 v）与源电极和漏极接触的有机半导体层，并且具有与相邻的有机薄膜晶体管不同的边缘，以及vi）设置成覆盖有机半导体的悬臂层接触设置在有机半导体层中或其下方的层的一部分，并且暴露于有机半导体层的边缘的外侧。根据一个实施例，容易获得有机半导体层的图案化效果，并且提高诸如开/关比的特性。

8. 发明授权

US07671359B2 Thin film transistor, a method for preparing the same and a flat panel display employing the same 有权
标题翻译：薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器
公开(公告)号：US07671359B2
公开(公告)日：2010-03-02
申请号：US11329865
申请日：2006-01-09
申请人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
发明人： Min-Chul Suh , Myeong-Seob So , Jae-Bon Koo , Nam-Choul Yang
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0062 , H01L51/0078 , H01L51/0541 , H01L51/0583
摘要： Provided are a thin film transistor, a method for preparing the same and a flat panel display employing the same. The thin film transistor includes a gate electrode, source and drain electrodes insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes, an insulating layer, and a carrier blocking layer interposed between the semiconductor layer and the insulating layer and preventing electrons or holes moving through semiconductor layer from being trapped in the insulating layer. Since the thin film transistor is constructed such that the carrier blocking layer is interposed between the semiconductor layer and the insulating layer, the electrons or holes injected into the semiconductor layer can be prevented from being trapped in the insulating layer, thereby suppressing hysteresis characteristic. In addition, a reliable flat panel display device can be manufactured using the thin film transistor.
摘要翻译：提供薄膜晶体管，其制备方法和采用该薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，与栅电极绝缘的源电极和漏电极，与栅电极绝缘并电连接到源极和漏极的半导体层，绝缘层和插入在半导体之间的载流子阻挡层层和绝缘层，并且防止移动通过半导体层的电子或空穴被捕获在绝缘层中。由于薄膜晶体管被构造为使得载流子阻挡层插入在半导体层和绝缘层之间，因此可以防止注入到半导体层中的电子或空穴被捕获在绝缘层中，从而抑制滞后特性。此外，可以使用薄膜晶体管制造可靠的平板显示装置。

9. 发明申请

US20090272969A1 METHOD OF PATTERNING AN ORGANIC THIN FILM, AN ORGANIC THIN FILM TRANSISTOR, A METHOD OF MANUFACTURING AN ORGANIC THIN FILM TRANSISTOR, AND AN ORGANIC ELECTROLUMINESCENE DISPLAY DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：有机薄膜的形成方法，有机薄膜晶体管，有机薄膜晶体管的制造方法和有机薄膜晶体管的有机电致发光显示器件
公开(公告)号：US20090272969A1
公开(公告)日：2009-11-05
申请号：US12504312
申请日：2009-07-16
申请人： Min-Chul Suh , Jae-Bon Koo
发明人： Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3244 , H01L51/0019 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.
摘要翻译：提供了可以防止有机半导体层的表面损伤的有机薄膜图案化的方法。此外，提供了可以减少截止电流并且可以防止有机半导体层的表面损伤的有机薄膜晶体管和有机薄膜晶体管的制造方法，以及具有有机薄膜晶体管的有机电致发光显示装置。图案化有机薄膜的方法包括在基板上形成有机薄膜，在有机薄膜的一部分上选择性地印刷掩模材料，使用掩模材料干燥蚀刻有机薄膜的暴露部分，面具材料。

10. 发明授权

US07582894B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07582894B2
公开(公告)日：2009-09-01
申请号：US11280105
申请日：2005-11-15
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/283 , H01L51/0003 , H01L51/0021 , H01L51/0096 , H01L51/0516 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.
摘要翻译：公开了具有均匀特性的有机TFT和具有有机TFT的平板显示器，其中有机TFT包括通过旋涂形成的有机半导体层。有机TFT的一个实施例包括：基板，设置在基板上的栅电极，覆盖栅电极的栅极绝缘膜，设置在栅极绝缘膜上的有机半导体层，以及与栅极绝缘膜接触的源电极和漏电极有机半导体层，其中在所述栅极绝缘膜上形成有多个突出部，并且所述突出部从所述源极延伸到所述漏电极。

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