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1. 发明申请

US20070052024A1 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US20070052024A1
公开(公告)日：2007-03-08
申请号：US11510454
申请日：2006-08-26
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

2. 发明申请

US20050269562A1 Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) 审中-公开
标题翻译：薄膜晶体管（TFT）和具有薄膜晶体管（TFT）的平板显示面板
公开(公告)号：US20050269562A1
公开(公告)日：2005-12-08
申请号：US11126300
申请日：2005-05-11
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee
IPC分类号： H01L51/50 , G02F1/136 , H01L21/336 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H05B33/14
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0036 , H01L51/0055 , H01L51/0541
摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

3. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

4. 发明申请

US20100252803A1 THIN FILM TRANSISTOR HAVING A NANO SEMICONDUCTOR SHEET AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US20100252803A1
公开(公告)日：2010-10-07
申请号：US12814414
申请日：2010-06-11
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L29/66
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

5. 发明申请

US20060138405A1 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 审中-公开
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20060138405A1
公开(公告)日：2006-06-29
申请号：US11298211
申请日：2005-12-09
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

6. 发明授权

US08344364B2 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US08344364B2
公开(公告)日：2013-01-01
申请号：US12814414
申请日：2010-06-11
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L29/08 , B32B17/12 , B32B18/00
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

7. 发明授权

US07812342B2 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same 有权
标题翻译：具有纳米半导体薄片的薄膜晶体管及其制造方法
公开(公告)号：US07812342B2
公开(公告)日：2010-10-12
申请号：US11510454
申请日：2006-08-25
申请人： Sang-Min Lee , Nam-Choul Yang
发明人： Sang-Min Lee , Nam-Choul Yang
IPC分类号： H01L51/00
CPC分类号： H01L29/78681 , B82Y10/00 , H01L27/1292 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/66969 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0097 , Y02E10/549 , Y02P70/521 , Y10S977/755
摘要： Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film.
摘要翻译：提供了纳米半导体薄片，使用纳米半导体薄片的薄膜晶体管（TFT）和使用纳米半导体薄片的平板显示器。纳米半导体薄片具有优异的特性，可以在室温下制造，具有良好的柔韧性。纳米半导体片包括：第一膜和设置在第一膜的至少一侧或内侧的第二膜，并且包括基本上彼此平行排列的多个纳米颗粒。此外，提供了制造纳米半导体薄片的方法和使用纳米半导体薄片制造TFT和平板显示器的方法。制造纳米半导体薄片的方法包括：形成具有基本上平行布置的多个纳米颗粒的第一聚合物微纤维; 准备第一部电影; 以及在所述第一膜的至少一侧或内侧布置多个所述第一微纤维。

8. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

9. 发明授权

US08802967B2 Photoelectric conversion module 有权
标题翻译：光电转换模块
公开(公告)号：US08802967B2
公开(公告)日：2014-08-12
申请号：US12662337
申请日：2010-04-12
申请人： Nam-Choul Yang , Ji-Won Lee
发明人： Nam-Choul Yang , Ji-Won Lee
IPC分类号： H02N6/00 , H01L31/042 , H01G9/20
CPC分类号： H01G9/2068 , H01G9/2077 , Y02E10/542 , Y02P70/521
摘要： A photoelectric conversion module including a pair of substrates facing each other and forming a space for containing an electrolyte therein, a sealing member placed along the edges of the pair of substrates to seal the electrolyte, defining a plurality of photoelectric cells between the pair of substrates, and having an open portion to form an electrolyte inlet, and an inlet sealer formed along the electrolyte inlet. The photoelectric conversion module has improved durability, reliability, and mass-productivity.
摘要翻译：一种光电转换模块，包括一对基板，彼此面对并形成用于容纳电解质的空间;密封部件，沿着该对基板的边缘放置以密封电解质，在该对基板之间限定多个光电单元并且具有开口部分以形成电解质入口，以及沿着电解质入口形成的入口密封件。光电转换模块具有改进的耐久性，可靠性和批量生产率。

10. 发明授权

US08173485B2 Method of manufacturing organic light emitting device 有权
标题翻译：制造有机发光装置的方法
公开(公告)号：US08173485B2
公开(公告)日：2012-05-08
申请号：US12510939
申请日：2009-07-28
申请人： Alex Song , Nam-Choul Yang , Min-Chul Suh , Seong-Taek Lee
发明人： Alex Song , Nam-Choul Yang , Min-Chul Suh , Seong-Taek Lee
IPC分类号： H01L51/56
CPC分类号： H01L51/56 , H01L27/3246 , H01L27/3283
摘要： A method of manufacturing an organic light emitting device by which a pixel defining layer can be easily formed. The method includes: forming a first electrode on a substrate; forming a photoresist layer to cover the first electrode; patterning the photoresist layer and forming a blocking layer so that the blocking layer is on a side of the first electrode opposite to a side facing the substrate; forming a pixel defining layer on the substrate to cover side ends of the first electrode; removing the blocking layer and exposing the side of the first electrode contacting the blocking layer; forming an intermediate layer including an organic light emitting layer on the side of the first electrode that is exposed by removing the blocking layer; and forming a second electrode on the intermediate layer.
摘要翻译：可以容易地形成像素限定层的有机发光器件的制造方法。该方法包括：在基板上形成第一电极; 形成光致抗蚀剂层以覆盖第一电极; 图案化光致抗蚀剂层并形成阻挡层，使得阻挡层位于与面向衬底的一侧相反的第一电极的一侧; 在所述基板上形成像素限定层以覆盖所述第一电极的侧端; 去除阻挡层并暴露接触阻挡层的第一电极的侧面; 通过去除所述阻挡层而在所述第一电极的一侧形成包含有机发光层的中间层; 以及在所述中间层上形成第二电极。

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