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1. 发明授权

US6043003A E-beam application to mask making using new improved KRS resist system 有权
公开(公告)号：US6043003A
公开(公告)日：2000-03-28
申请号：US356309
申请日：1999-07-16
申请人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
发明人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/143
摘要： The present invention relates to chemically amplified resists and resist systems wherein some of the polar functional groups of the aqueous base soluble polymer or copolymers are protected with a cyclic aliphatic ketal protecting group such as methoxycyclohexanyl. The resists and the resist systems of the present invention containing the new protecting group have improved shelf-life and vacuum stability as compared to the prior art resists. Thus, the resists of the present invention are highly useful in e-beam lithographic applications.

2. 发明授权

US6037097A E-beam application to mask making using new improved KRS resist system 失效
标题翻译：电子束应用于使用新的改进的KRS抗蚀剂系统进行掩模制作
公开(公告)号：US6037097A
公开(公告)日：2000-03-14
申请号：US14432
申请日：1998-01-27
申请人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
发明人： James J. Bucchignano , Wu-Song Huang , Ahmad D. Katnani , Kim Y. Lee , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/143
摘要： The present invention relates to chemically amplified resists and resist systems wherein some of the polar functional groups of the aqueous base soluble polymer or copolymers are protected with a cyclic aliphatic ketal protecting group such as methoxycyclohexanyl. The resists and the resist systems of the present invention containing the new protecting group have improved shelf-life and vacuum stability as compared to the prior art resists. Thus, the resists of the present invention are highly useful in e-beam lithographic applications.
摘要翻译：本发明涉及化学放大抗蚀剂和抗蚀剂体系，其中水性基团可溶性聚合物或共聚物的一些极性官能团用环状脂族缩酮保护基如甲氧基环己基保护。与现有技术的抗蚀剂相比，含有新保护基的本发明的抗蚀剂和抗蚀剂体系具有改善的保质期和真空稳定性。因此，本发明的抗蚀剂在电子束光刻应用中非常有用。

3. 发明授权

US06617086B2 Forming a pattern of a negative photoresist 有权
公开(公告)号：US06617086B2
公开(公告)日：2003-09-09
申请号：US09796445
申请日：2001-03-02
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03C300
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.

4. 发明授权

US06251569B1 Forming a pattern of a negative photoresist 有权
标题翻译：形成负光致抗蚀剂的图案
公开(公告)号：US06251569B1
公开(公告)日：2001-06-26
申请号：US09373555
申请日：1999-08-13
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03F730
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
摘要翻译：已经发现了一组新的基于聚合物侧基碳基 - 氧键重新分配的非化学扩增负色调水/水基（可显影（photo））抗蚀剂。

5. 发明授权

US08029975B2 Fused aromatic structures and methods for photolithographic applications 有权
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US08029975B2
公开(公告)日：2011-10-04
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

6. 发明申请

US20090004596A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 失效
公开(公告)号：US20090004596A1
公开(公告)日：2009-01-01
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03C1/73 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.

7. 发明申请

US20090286180A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
标题翻译：用于光刻应用的熔融芳构结构和方法
公开(公告)号：US20090286180A1
公开(公告)日：2009-11-19
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

8. 发明授权

US07566527B2 Fused aromatic structures and methods for photolithographic applications 失效
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US07566527B2
公开(公告)日：2009-07-28
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

9. 发明授权

US07695897B2 Structures and methods for low-k or ultra low-k interlayer dielectric pattern transfer 失效
标题翻译：低k或超低k层间电介质图案转移的结构和方法
公开(公告)号：US07695897B2
公开(公告)日：2010-04-13
申请号：US11429709
申请日：2006-05-08
申请人： James J. Bucchignano , Gerald W. Gibson , Mary B. Rothwell , Roy R. Yu
发明人： James J. Bucchignano , Gerald W. Gibson , Mary B. Rothwell , Roy R. Yu
IPC分类号： G03F7/00 , G03F7/26
CPC分类号： H01L21/31144 , H01L21/76802 , H01L21/76813
摘要： The present invention relates to improved methods and structures for forming interconnect patterns in low-k or ultra low-k (i.e., having a dielectric constant ranging from about 1.5 to about 3.5) interlevel dielectric (ILD) materials. Specifically, reduced lithographic critical dimensions (CDs) (i.e., in comparison with target CDs) are initially used for forming a patterned resist layer with an increased thickness, which in turn allows use of a simple hard mask stack comprising a lower nitride mask layer and an upper oxide mask layer for subsequent pattern transfer. The hard mask stack is next patterned by a first reactive ion etching (RIE) process using an oxygen-containing chemistry to form hard mask openings with restored CDs that are substantially the same as the target CDs. The ILD materials are then patterned by a second RIE process using a nitrogen-containing chemistry to form the interconnect pattern with the target CDs.
摘要翻译：本发明涉及用于形成低k或超低k（即介电常数范围为约1.5至约3.5）层间电介质（ILD）材料的互连图案的改进方法和结构。具体地说，减小的光刻关键尺寸（CD）（即与目标CD相比）最初用于形成具有增加的厚度的图案化抗蚀剂层，其又允许使用包括下部氮化物掩模层的简单硬掩模层，用于随后的图案转印的上氧化物掩模层。接下来通过使用含氧化学物质的第一反应离子蚀刻（RIE）工艺来形成硬掩模叠层，以形成具有与目标CD基本相同的恢复的CD的硬掩模开口。然后通过使用含氮化学物质的第二RIE方法将ILD材料图案化，以形成与目标CD的互连图案。

10. 发明申请

US20100196806A1 STRUCTURES AND METHODS FOR LOW-K OR ULTRA LOW-K INTERLAYER DIELECTRIC PATTERN TRANSFER 审中-公开
标题翻译：低K或超低介电常数介质转移的结构与方法
公开(公告)号：US20100196806A1
公开(公告)日：2010-08-05
申请号：US12758431
申请日：2010-04-12
申请人： James J. Bucchignano , Gerald W. Gibson , Mary B. Rothwell , Roy R. Yu
发明人： James J. Bucchignano , Gerald W. Gibson , Mary B. Rothwell , Roy R. Yu
IPC分类号： G03F1/00
CPC分类号： H01L21/31144 , H01L21/76802 , H01L21/76813
摘要： The present invention relates to improved methods and structures for forming interconnect patterns in low-k or ultra low-k (i.e., having a dielectric constant ranging from about 1.5 to about 3.5) interlevel dielectric (ILD) materials. Specifically, reduced lithographic critical dimensions (CDs) (i.e., in comparison with target CDs) are initially used for forming a patterned resist layer with an increased thickness, which in turn allows use of a simple hard mask stack comprising a lower nitride mask layer and an upper oxide mask layer for subsequent pattern transfer. The hard mask stack is next patterned by a first reactive ion etching (RIE) process using an oxygen-containing chemistry to form hard mask openings with restored CDs that are substantially the same as the target CDs. The ILD materials are then patterned by a second RIE process using a nitrogen-containing chemistry to form the interconnect pattern with the target CDs.
摘要翻译：本发明涉及用于形成低k或超低k（即介电常数范围为约1.5至约3.5）层间电介质（ILD）材料的互连图案的改进方法和结构。具体地说，减小的光刻关键尺寸（CD）（即与目标CD相比）最初用于形成具有增加的厚度的图案化抗蚀剂层，其又允许使用包括下部氮化物掩模层的简单硬掩模层，用于随后的图案转印的上氧化物掩模层。接下来通过使用含氧化学物质的第一反应离子蚀刻（RIE）工艺来形成硬掩模叠层，以形成具有与目标CD基本相同的恢复的CD的硬掩模开口。然后通过使用含氮化学物质的第二RIE方法将ILD材料图案化，以形成与目标CD的互连图案。

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