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1. 发明授权

US06340734B1 Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US06340734B1
公开(公告)日：2002-01-22
申请号：US09454563
申请日：1999-12-07
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： C08G7706
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

2. 发明授权

US6087064A Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US6087064A
公开(公告)日：2000-07-11
申请号：US146867
申请日：1998-09-03
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/075 , G03C1/725
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

3. 发明授权

US06939664B2 Low-activation energy silicon-containing resist system 失效
标题翻译：低活化能含硅抗蚀剂体系
公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

4. 发明申请

US20050106494A1 Silicon-containing resist systems with cyclic ketal protecting groups 审中-公开
标题翻译：具有环状缩酮保护基的含硅抗蚀剂体系
公开(公告)号：US20050106494A1
公开(公告)日：2005-05-19
申请号：US10716785
申请日：2003-11-19
申请人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
IPC分类号： G03F7/039 , C08G77/22 , G03C1/492 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/11 , G03F7/20 , H01L21/027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0046 , G03F7/0757
摘要： Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的光致抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅倍半硅氧烷聚合物含有侧链溶解性抑制性环状缩酮酸不稳定部分，具有低活化能的酸催化裂解。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

5. 发明授权

US07901864B2 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US07901864B2
公开(公告)日：2011-03-08
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy A. Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03C1/00 , H01L21/00 , G03F1/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，其包括至少一种水溶性基团可溶部分，包含水溶性基团可溶部分的聚合物，交联剂和辐射敏感性酸发生剂。

6. 发明授权

US06730454B2 Antireflective SiO-containing compositions for hardmask layer 有权
标题翻译：用于硬掩模层的抗反射SiO组合物
公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译：存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。

7. 发明授权

US07270931B2 Silicon-containing compositions for spin-on ARC/hardmask materials 有权
标题翻译：用于旋涂ARC /硬掩模材料的含硅组合物
公开(公告)号：US07270931B2
公开(公告)日：2007-09-18
申请号：US10679782
申请日：2003-10-06
申请人： Marie Angelopoulos , Wu-Song Huang , Arpan P. Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Marie Angelopoulos , Wu-Song Huang , Arpan P. Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03C1/73 , G03C1/825 , G03C1/835
CPC分类号： G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

8. 发明申请

US20060063103A1 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
标题翻译：辐射敏感性组合物和使用该辐射敏感组合物制造器件的方法
公开(公告)号：US20060063103A1
公开(公告)日：2006-03-23
申请号：US10948826
申请日：2004-09-23
申请人： Wu-Song Huang , Marie Angelopoulos , Timothy Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Marie Angelopoulos , Timothy Brunner , Dirk Pfeiffer , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/0755 , G03F7/0382 , G03F7/0392
摘要： A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.
摘要翻译：辐射敏感性组合物（以及使用该组合物制造器件的方法）包括非聚合倍半硅氧烷，其包含至少一种酸不稳定部分，包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物部分和辐射敏感性酸产生剂。另一种辐射敏感组合物（以及使用该组合物制造器件的方法）包括非聚合物倍半硅氧烷，包括至少一种水溶性基团可溶部分，包含碱性水溶性部分的聚合物，交联剂和辐射敏感性酸产生剂。

9. 发明申请

US20050089792A1 LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM 失效
标题翻译：低活性能含硅电阻系统
公开(公告)号：US20050089792A1
公开(公告)日：2005-04-28
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert Allen , Marie Angelopoulos , Ranee Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有具有低溶解性的抑制酸不稳定部分用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

10. 发明授权

US07361444B1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 有权
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07361444B1
公开(公告)日：2008-04-22
申请号：US09256034
申请日：1999-02-23
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/023
CPC分类号： G03F7/091 , Y10S430/145
摘要： Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.
摘要翻译：公开了包括双层和顶面成像的多层抗蚀剂结构，其利用用作ARC的调谐底层，平坦化层和耐蚀刻硬掩模，其特性如光学，化学和物理性质被定制以产生呈现高分辨率的多层抗蚀剂结构自由光刻及其制备方法。这些下层膜包括其加工条件被控制的基于酚醛清漆的抗蚀剂的组，诸如BARL材料的聚芳基砜，聚羟基苯乙烯基衍生物，作为与含有交联剂的蒽甲醇反应的聚羟基苯乙烯和聚羟基苯乙烯的共聚物的实例，以及酸催化剂（热酸生成剂），聚酰亚胺，聚醚，特别是聚亚芳基醚，聚芳基硫醚，聚碳酸酯如聚芳基碳酸酯，环氧化物，环氧丙烯酸酯，聚亚芳基如聚苯撑，聚亚芳基亚乙烯基如聚亚苯基亚乙烯基，聚乙烯基咔唑，环烯烃和聚酯。这种膜的折射率和消光系数在UV和DUV波长，特别是365,248,293和157nm以及EUV下可调节为约1.4至约2.1和约0.1至约0.6。此外，在本发明中制备的底层膜不与抗蚀剂界面混合和除气产物对抗蚀剂的污染相互作用。双层和TSI抗蚀剂结构可用于248,193,157，EUV，X射线，电子束和离子束技术。

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