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1. 发明专利

JP2003050584A Method and system for wafer-level tuning of bulk acoustic wave resonator and filter 有权
标题翻译：大容量波形谐振器和滤波器的水平调谐方法与系统
公开(公告)号：JP2003050584A
公开(公告)日：2003-02-21
申请号：JP2002126693
申请日：2002-04-26
申请人： Nokia Corp , ノキアコーポレーション
发明人： ELLA JUHA , TIKKA PASI , KAITILA JYRKI
IPC分类号： H01L21/66 , G10K11/04 , H01L41/09 , H01L41/18 , H01L41/22 , H03H3/04 , H03H9/17
CPC分类号： H03H3/04 , H03H2003/0414 , H03H2003/0478 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator from which a bulk acoustic wave device having a uniform operation frequency can be fabricated on a large substrate or wafer. SOLUTION: This invention relates to a method and a system for tuning the bulk acoustic wave resonator and a filter at a wafer level for correcting non-uniformity of thickness of a device to the non-uniformity of thickness of the device caused when a bulk acoustic wave device is fabricated on a large substrate or wafer, by using an etching mask having such non-uniformity of thickness as to correct the non-uniformity of the thickness.
摘要翻译：要解决的问题：提供一种能够在大的衬底或晶片上制造具有均匀的工作频率的体声波器件的体声波谐振器。解决方案：本发明涉及一种用于调整体声波谐振器和晶片级滤波器的方法和系统，用于将器件厚度的不均匀性校正为器件厚度的不均匀性，当体声通过使用具有厚度不均匀性的蚀刻掩模来校正厚度的不均匀性，在大的衬底或晶片上制造波器件。

2. 发明专利

JP2002353761A WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002353761A
公开(公告)日：2002-12-06
申请号：JP2002119478
申请日：2002-04-22
申请人： NOKIA CORP
发明人： KAITILA JYRKI , TIKKA PASI , ELLA JUHA
IPC分类号： C23C16/04 , H03H3/013 , H03H3/02 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To manufacture a bulk acoustic wave element with a uniform operat ing frequency on a large-sized substrate. SOLUTION: In the case of manufacturing bulk acoustic elements by thin film layers formed on a substrate by a chemical vapor deposition process, by locally supplying a medium for promoting the chemical vapor deposition process to the substrate, the operating frequencies of the bulk acoustic wave elements can be tuned uniformly.

3. 发明专利

JP2007267405A Filter structure including piezo-resonator, and its configuration 有权
标题翻译：滤波器结构，包括PIEZO谐振器及其配置
公开(公告)号：JP2007267405A
公开(公告)日：2007-10-11
申请号：JP2007128094
申请日：2007-05-14
申请人： Nokia Corp , ノキアコーポレイション
发明人： TIKKA PASI , ELLA JUHA
IPC分类号： H03H9/54 , H01L41/09 , H01L41/18 , H01L41/22 , H03H9/00 , H03H9/17 , H03H9/58 , H03H9/60 , H03H9/64
CPC分类号： H03H9/0095 , H03H9/605
摘要： PROBLEM TO BE SOLVED: To provide a filter structure which uses a plurality of piezo-resonators and has excellent power handling capacity and electric responses. SOLUTION: The filter structure has a chain of piezo-resonators. The chain forms groups of piezo-resonators 1020 and 1110 comprising at least two piezo-resonators connected to a first piezo-resonator in series and is connected in series together with the first piezo-resonator. Each piezo-resonator belonging to the chain of piezo-resonators has resonating frequency substantially equivalent to a first resonating frequency. The groups of piezo-resonators 1020 and 1110 are connected only through the first piezo-resonator 1021b connected in series at one end of the group of the piezo-resonators, and the second piezo-resonator connected in series at the other end of the group of the piezo-resonators. Impedance of the groups of the piezo-resonators connected in series is matched with impedance of the filter structure and the filter structure takes the form of ladder-type filter structures 1090 and 1100. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用多个压电谐振器并且具有优异的功率处理能力和电响应的滤波器结构。滤波器结构具有压电谐振器链。链形成压电谐振器1020和1110的组，其包括串联连接到第一压电谐振器的至少两个压电谐振器，并与第一压电谐振器一起串联连接。属于压电谐振器链的每个压电谐振器的谐振频率基本上等于第一谐振频率。压电谐振器1020和1110的组仅通过串联在压电谐振器组的一端的第一压电谐振器1021b连接，并且第二压电谐振器串联连接在组的另一端的压电谐振器。串联连接的压电谐振器组的阻抗与滤波器结构的阻抗相匹配，滤波器结构采用梯形滤波器结构1090和1100的形式。（C）2008，JPO＆INPIT

4. 发明专利

JP2002344271A WAFER LEVEL TUNING METHOD AND SYSTEM FOR BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002344271A
公开(公告)日：2002-11-29
申请号：JP2002124693
申请日：2002-04-25
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： H03H3/013 , H03H3/02 , H03H3/04 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a method and system for realizing a desired resonance frequency of a bulk acoustic wave device within a given tolerance range. SOLUTION: The wafer level tuning method and system for a bulk acoustic wave resonator and a filter includes a step of providing an etching medium on the surface layer at one position, in order to adjust the thickness of at least one position of the surface layer locally all at once, a step of rearranging the etching medium at another position of the surface layer in the device, in order to adjust the thickness of at least another position of the surface layer, and a repeating step of the rearrangement, when at least another remaining position of the surface layer needs adjusting of the thickness.

5. 发明专利

JP2011072047A Filter structure 审中-公开
标题翻译：过滤器结构
公开(公告)号：JP2011072047A
公开(公告)日：2011-04-07
申请号：JP2011004509
申请日：2011-01-13
申请人： Nokia Corp , ノキアコーポレイション
发明人： ELLA JUHA
IPC分类号： H03H9/17 , H03H9/54 , H03H9/56 , H04B1/16
CPC分类号： H03H9/568
摘要： PROBLEM TO BE SOLVED: To provide a filter structure whose attenuation gradient on an edge in a passband is steep compared to that of a conventional lattice filter. SOLUTION: The structure has: a first port including a first signal line and a second signal line; a second port comprising a first signal line and a second signal line; a first resonator connecting the first signal line of the first port to the first signal line of the second port; a second resonator connecting the second signal line of the first port to the second signal line of the second port; a third resonator connecting the first signal line of the first port to the second signal line of the second port; and a fourth resonator connecting the second signal line of the first port to the first signal line of the second port. The first to fourth resonators are all bulk acoustic wave resonators, the first and second resonators have a first area, the third and fourth resonators have a second area, and the first area is larger than the second area. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种滤波器结构，其在通带中的边缘上的衰减梯度与常规晶格滤波器相比陡峭。解决方案：该结构具有：包括第一信号线和第二信号线的第一端口; 第二端口，包括第一信号线和第二信号线; 第一谐振器，将第一端口的第一信号线连接到第二端口的第一信号线; 将所述第一端口的第二信号线连接到所述第二端口的第二信号线的第二谐振器; 将第一端口的第一信号线连接到第二端口的第二信号线的第三谐振器; 以及将第一端口的第二信号线连接到第二端口的第一信号线的第四谐振器。第一至第四谐振器都是体声波谐振器，第一和第二谐振器具有第一区域，第三和第四谐振器具有第二区域，第一区域大于第二区域。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2007202171A Device containing controllable thin-film bulk acoustic resonator for amplitude and phase modulation 有权
标题翻译：包含可控薄膜泡沫谐振器的装置，用于振幅和相位调制
公开(公告)号：JP2007202171A
公开(公告)日：2007-08-09
申请号：JP2007042874
申请日：2007-02-22
申请人： Nokia Corp , ノキアコーポレーション
发明人： ELLA JUHA
IPC分类号： H03C1/08 , H04R17/00 , H01L41/09 , H01L41/18 , H01L41/22 , H03C1/46 , H03C3/10 , H03C3/42 , H03H3/02 , H03H3/04 , H03H9/17 , H03H9/54
CPC分类号： H03H9/175 , H03C1/46 , H03C3/42 , H03H3/04 , H03H9/173 , H03H9/174 , H03H2003/0428
摘要： PROBLEM TO BE SOLVED: To provide a device containing a controllable BAW resonator for amplitude modulating or phase modulating desired signals. SOLUTION: The bulk acoustic wave resonator comprises a substrate, a resonation means, a first electrode adjacent to the first surface of the resonation means, a second electrode adjacent to the second surface of the resonation means, a membrane positioned between the second electrode and the substrate, a pair of etching windows, and an air gap separating at least a portion of the substrate from at least a portion of the membrane. The air gap is formed by etching a portion of the substrate through the etching windows, the resonation means resonates in response to an electric field generated between the electrodes by a voltage applied between the first and second electrodes, and the air gap insulates vibrations generated by the resonation means from the bulk acoustic wave resonator insulated from the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种包含用于振幅调制或相位调制所需信号的可控BAW谐振器的装置。解决方案：体声波谐振器包括衬底，谐振装置，与谐振装置的第一表面相邻的第一电极，与谐振装置的第二表面相邻的第二电极，位于第二电极之间的膜电极和衬底，一对蚀刻窗口和将至少一部分衬底与膜的至少一部分分开的气隙。通过蚀刻窗口蚀刻衬底的一部分来形成气隙，谐振装置响应于通过施加在第一和第二电极之间的电压而在电极之间产生的电场而谐振，并且气隙绝缘由来自与基板绝缘的体声波谐振器的谐振装置。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2002268644A MONOLITHIC FBAR DUPLEXER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2002268644A
公开(公告)日：2002-09-20
申请号：JP2001397974
申请日：2001-12-27
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/70
摘要： PROBLEM TO BE SOLVED: To provide a monolithic FBAR duplexer which can be made small- sized and reduced in manufacture cost and a method for manufacturing it. SOLUTION: On a single substrate, a transmitting filter and a receiving filter each having an L type section composed of a series resonator and a shunt resonator are provided and the shunt resonators of both the filters are provided with tuning layers and the series resonator of one of the filters and both the shunt resonators are provided with tuning layers to form the duplexer which has the transmitting filter and receiving filter differing in frequency. Thus, the size of equipment is reduced and the manufacture cost is lowered.

8. 发明专利

DE60134620D1 未知
公开(公告)号：DE60134620D1
公开(公告)日：2008-08-14
申请号：DE60134620
申请日：2001-12-28
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H03H9/70 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/58

9. 发明专利

AT400085T 未知
公开(公告)号：AT400085T
公开(公告)日：2008-07-15
申请号：AT01310921
申请日：2001-12-28
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H03H9/70 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/58

10. 发明专利

BRPI0415009A 未知
公开(公告)号：BRPI0415009A
公开(公告)日：2006-11-07
申请号：BRPI0415009
申请日：2004-08-13
申请人： NOKIA CORP
发明人： MARTIN NIGEL , ELLA JUHA , KLYAKOSKI JANNE
IPC分类号： H04B1/40 , H04B1/48 , H04J99/00 , H04B1/38 , H04B1/10
摘要： A receive front-end module having one or more 2 GHz Rx paths and one or more W-CDMA Rx paths for use in a portable communication device, such as a mobile phone or a communicator device. The module comprises at least two feed points operatively connected to two electrically separate antennas for receiving communication signals. The module also comprises filters for filtering the communication signals in corresponding frequency band, and means for providing cross-band isolation. The cross-band isolation is achieved by using linear amplifiers in different signal paths, for example. Advantageously, the module comprising three signal paths so that one or more modules can be used together to achieve MIMO/diversity functionality.

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