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1. 发明专利

JP2002268644A MONOLITHIC FBAR DUPLEXER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2002268644A
公开(公告)日：2002-09-20
申请号：JP2001397974
申请日：2001-12-27
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/70
摘要： PROBLEM TO BE SOLVED: To provide a monolithic FBAR duplexer which can be made small- sized and reduced in manufacture cost and a method for manufacturing it. SOLUTION: On a single substrate, a transmitting filter and a receiving filter each having an L type section composed of a series resonator and a shunt resonator are provided and the shunt resonators of both the filters are provided with tuning layers and the series resonator of one of the filters and both the shunt resonators are provided with tuning layers to form the duplexer which has the transmitting filter and receiving filter differing in frequency. Thus, the size of equipment is reduced and the manufacture cost is lowered.

2. 发明专利

JP2002311959A METHOD AND SYSTEM FOR WAFER LEVEL TUNING OF BULK SOUND RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002311959A
公开(公告)日：2002-10-25
申请号：JP2002018553
申请日：2002-01-28
申请人： NOKIA CORP
发明人： ELLAE JUHA , TIKKA PASI , KAITILA JYRKI
IPC分类号： G10K11/02 , H01L41/22 , H03H3/013 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for obtaining a desired resonance frequency of a bulk sound wave device within a specified permissible tolerance. SOLUTION: The method for turning the bulk sound wave device formed of a plurality of sound wave generation and control layers on a substrate includes a process of providing a mask with an aperture near to the surface of the device, a process of varying the thickness of the device by providing a particle beam onto the mask, making at least a part of the particle beam pass through the aperture, and bringing the device surface into contact with a contact area substantially segmented by the aperture, and a process of varying the contact area by rearranging the aperture of the mask laterally on the device surface.

3. 发明专利

JP2007267405A Filter structure including piezo-resonator, and its configuration 有权
标题翻译：滤波器结构，包括PIEZO谐振器及其配置
公开(公告)号：JP2007267405A
公开(公告)日：2007-10-11
申请号：JP2007128094
申请日：2007-05-14
申请人： Nokia Corp , ノキアコーポレイション
发明人： TIKKA PASI , ELLA JUHA
IPC分类号： H03H9/54 , H01L41/09 , H01L41/18 , H01L41/22 , H03H9/00 , H03H9/17 , H03H9/58 , H03H9/60 , H03H9/64
CPC分类号： H03H9/0095 , H03H9/605
摘要： PROBLEM TO BE SOLVED: To provide a filter structure which uses a plurality of piezo-resonators and has excellent power handling capacity and electric responses. SOLUTION: The filter structure has a chain of piezo-resonators. The chain forms groups of piezo-resonators 1020 and 1110 comprising at least two piezo-resonators connected to a first piezo-resonator in series and is connected in series together with the first piezo-resonator. Each piezo-resonator belonging to the chain of piezo-resonators has resonating frequency substantially equivalent to a first resonating frequency. The groups of piezo-resonators 1020 and 1110 are connected only through the first piezo-resonator 1021b connected in series at one end of the group of the piezo-resonators, and the second piezo-resonator connected in series at the other end of the group of the piezo-resonators. Impedance of the groups of the piezo-resonators connected in series is matched with impedance of the filter structure and the filter structure takes the form of ladder-type filter structures 1090 and 1100. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用多个压电谐振器并且具有优异的功率处理能力和电响应的滤波器结构。滤波器结构具有压电谐振器链。链形成压电谐振器1020和1110的组，其包括串联连接到第一压电谐振器的至少两个压电谐振器，并与第一压电谐振器一起串联连接。属于压电谐振器链的每个压电谐振器的谐振频率基本上等于第一谐振频率。压电谐振器1020和1110的组仅通过串联在压电谐振器组的一端的第一压电谐振器1021b连接，并且第二压电谐振器串联连接在组的另一端的压电谐振器。串联连接的压电谐振器组的阻抗与滤波器结构的阻抗相匹配，滤波器结构采用梯形滤波器结构1090和1100的形式。（C）2008，JPO＆INPIT

4. 发明专利

JP2002344271A WAFER LEVEL TUNING METHOD AND SYSTEM FOR BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002344271A
公开(公告)日：2002-11-29
申请号：JP2002124693
申请日：2002-04-25
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： H03H3/013 , H03H3/02 , H03H3/04 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a method and system for realizing a desired resonance frequency of a bulk acoustic wave device within a given tolerance range. SOLUTION: The wafer level tuning method and system for a bulk acoustic wave resonator and a filter includes a step of providing an etching medium on the surface layer at one position, in order to adjust the thickness of at least one position of the surface layer locally all at once, a step of rearranging the etching medium at another position of the surface layer in the device, in order to adjust the thickness of at least another position of the surface layer, and a repeating step of the rearrangement, when at least another remaining position of the surface layer needs adjusting of the thickness.

5. 发明专利

JP2003050584A Method and system for wafer-level tuning of bulk acoustic wave resonator and filter 有权
标题翻译：大容量波形谐振器和滤波器的水平调谐方法与系统
公开(公告)号：JP2003050584A
公开(公告)日：2003-02-21
申请号：JP2002126693
申请日：2002-04-26
申请人： Nokia Corp , ノキアコーポレーション
发明人： ELLA JUHA , TIKKA PASI , KAITILA JYRKI
IPC分类号： H01L21/66 , G10K11/04 , H01L41/09 , H01L41/18 , H01L41/22 , H03H3/04 , H03H9/17
CPC分类号： H03H3/04 , H03H2003/0414 , H03H2003/0478 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator from which a bulk acoustic wave device having a uniform operation frequency can be fabricated on a large substrate or wafer. SOLUTION: This invention relates to a method and a system for tuning the bulk acoustic wave resonator and a filter at a wafer level for correcting non-uniformity of thickness of a device to the non-uniformity of thickness of the device caused when a bulk acoustic wave device is fabricated on a large substrate or wafer, by using an etching mask having such non-uniformity of thickness as to correct the non-uniformity of the thickness.
摘要翻译：要解决的问题：提供一种能够在大的衬底或晶片上制造具有均匀的工作频率的体声波器件的体声波谐振器。解决方案：本发明涉及一种用于调整体声波谐振器和晶片级滤波器的方法和系统，用于将器件厚度的不均匀性校正为器件厚度的不均匀性，当体声通过使用具有厚度不均匀性的蚀刻掩模来校正厚度的不均匀性，在大的衬底或晶片上制造波器件。

6. 发明专利

JP2002353761A WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002353761A
公开(公告)日：2002-12-06
申请号：JP2002119478
申请日：2002-04-22
申请人： NOKIA CORP
发明人： KAITILA JYRKI , TIKKA PASI , ELLA JUHA
IPC分类号： C23C16/04 , H03H3/013 , H03H3/02 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To manufacture a bulk acoustic wave element with a uniform operat ing frequency on a large-sized substrate. SOLUTION: In the case of manufacturing bulk acoustic elements by thin film layers formed on a substrate by a chemical vapor deposition process, by locally supplying a medium for promoting the chemical vapor deposition process to the substrate, the operating frequencies of the bulk acoustic wave elements can be tuned uniformly.

7. 发明申请

WO2005081618A3 METHOD FOR IMPROVING HEAT DISSIPATION IN ENCAPSULATED ELECTRONIC COMPONENTS 审中-公开
标题翻译：用于改善封装电子元件中散热的方法
公开(公告)号：WO2005081618A3
公开(公告)日：2009-04-09
申请号：PCT/IB2004003383
申请日：2004-10-15
申请人： NOKIA CORP , NOKIA INC , EPCOS AG , TIKKA PASI , SCHMIDHAMMER EDGAR , HEINZE HABBO , WELZER REINER , ZIDEK HERBERT , SCHAUFELE ANSGAR , ELLAE JUHA
发明人： TIKKA PASI , SCHMIDHAMMER EDGAR , HEINZE HABBO , WELZER REINER , ZIDEK HERBERT , SCHAUFELE ANSGAR , ELLAE JUHA
IPC分类号： H01L23/28 , H01L21/60 , H01L23/31 , H01L23/36 , H03H9/10
CPC分类号： H03H9/1078 , H01L23/3135 , H01L24/81 , H01L24/97 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2224/97 , H01L2924/01029 , H01L2924/01055 , H01L2924/01057 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/3011 , H03H9/02102 , H03H9/1085 , H03H2003/025 , H01L2224/81 , H01L2924/00
摘要： A method for improving heat dissipation in an encapsulated electronic package usually referred to as a chip size SAW package The package comprises one or more acoustic wave components fabricated on a die (30), which is disposed on an electrically non conductive carrier separated by electrically conducting bumps The top of the package is covered by a laminate (40) and a hermetic s layer (42) Heat dissipation can be improved by removing a part of the laminate and then depositing a layer of thermal conducting material on the package, and by providing one or more heat conducting paths through the carrier.
摘要翻译：一种用于改善封装的电子封装中的散热的方法，通常称为芯片尺寸的SAW封装。封装包括制造在管芯（30）上的一个或多个声波部件，该器件设置在由导电材料分开的非导电载体上凸起包装的顶部由层压板（40）和密封层（42）覆盖。可以通过去除层压体的一部分，然后在包装上沉积一层导热材料，并且通过提供穿过载体的一个或多个导热路径。

8. 发明公开

EP1766679A4 METHOD FOR IMPROVING HEAT DISSIPATION IN ENCAPSULATED ELECTRONIC COMPONENTS 有权转让
标题翻译：包封改善电子部件除热方法
公开(公告)号：EP1766679A4
公开(公告)日：2010-02-24
申请号：EP04769650
申请日：2004-10-15
申请人： NOKIA CORP , EPCOS AG
发明人： TIKKA PASI , SCHMIDHAMMER EDGAR , HEINZE HABBO , WELZER REINER , ZIDEK HERBERT , SCHAUFELE ANSGAR , ELLAE JUHA
IPC分类号： H01L23/28 , H01L21/60 , H01L23/31 , H01L23/36 , H03H3/02 , H03H3/08 , H03H9/10
CPC分类号： H03H9/1078 , H01L23/3135 , H01L24/81 , H01L24/97 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2224/97 , H01L2924/01029 , H01L2924/01055 , H01L2924/01057 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/3011 , H03H9/02102 , H03H9/1085 , H03H2003/025 , H01L2224/81 , H01L2924/00
摘要： A method for improving heat dissipation in an encapsulated electronic package usually referred to as a chip-size SAW package. The package comprises one or more acoustic-wave components fabricated on a die, which is disposed on an electrically non-conductive carrier separated by electrically conducting bumps. The top of the package is covered by a laminate and a hermetic seal layer. Heat dissipation can be improved by removing a part of the laminate and then depositing a layer of thermal conducting material on the package, and by providing one or more heat conducting paths through the carrier.

9. 发明专利

DE60223620D1 未知
公开(公告)号：DE60223620D1
公开(公告)日：2008-01-03
申请号：DE60223620
申请日：2002-04-11
申请人： NOKIA CORP
发明人： KAITILA JYRKI , TIKKA PASI , ELLAE JUHA
IPC分类号： C23C16/04 , H03H3/013 , H03H3/02 , H03H3/04
摘要： A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

10. 发明专利

DE60223620T2 未知
公开(公告)号：DE60223620T2
公开(公告)日：2008-07-24
申请号：DE60223620
申请日：2002-04-11
申请人： NOKIA CORP
发明人： KAITILA JYRKI , TIKKA PASI , ELLAE JUHA
IPC分类号： C23C16/04 , H03H3/013 , H03H3/02 , H03H3/04
摘要： A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

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