专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1994013595A1 FLUXLESS SOLDERING METHOD 审中-公开
标题翻译：无焊接方法
公开(公告)号：WO1994013595A1
公开(公告)日：1994-06-23
申请号：PCT/JP1992001611
申请日：1992-12-09
申请人： NIPPONDENSO CO., LTD. , YONEYAMA, Takao , OKADA, Hiroyuki
发明人： NIPPONDENSO CO., LTD.
IPC分类号： C03C27/04
CPC分类号： B23K1/20
摘要： A soldering method wherein, even when, for example, a pressure sensor unit having a sensor chip incorporating therein a highly integrated type semiconductor circuit is jointed to a metal stem, fluxless soldering can be performed without damaging the surface of the sensor chip. For this purpose, in forming a nickel layer for jointing by soldering and an oxidation preventing layer of a nickel layer on the surface of a member to be jointed, this oxidation preventing layer is formed before the soldering to a film thickness for suppressing exposure of nickel of the above-described nickel layer to the outermost surface of the member to be jointed after a thermal histeresis in association with the thermal histeresis to be received by the member to be jointed, the oxidation preventing layer is heated in a reducing atmosphere to melt a soldering foil and jointed to another member to be jointed by soldering. With this arrangement, even if the member to be jointed is subjected to the thermal histeresis before the soldering, exposure of the nickel layer, which is a base ground, to the outermost surface of the member to be jointed can be effectively suppressed, whereby substantially, there is no lowered soldering wettability on the jointed surface of the member to be jointed, even if the load imposed on the jointed portion is not increased during the jointing by soldering, satisfactory soldering wettability on the jointed surface can be realized, and, since the jointing by soldering is effected by heating in a reducing atmosphere, a fluxless soldering is possible that can provide highly tightly sealed jointed portion. Therefore, in jointing the pressure sensor unit having the sensor chip incorporating therein the highly integrated type semiconductor circuit to the metal stem, there is no need of loading the metal stem with the sensor chip facing downward, so that a disadvantage of damaging the surface of the sensor chip can be obviated.
摘要翻译：一种焊接方法，其中，即使例如具有结合有高度集成型半导体电路的传感器芯片的压力传感器单元连接到金属杆上，也可以在不损坏传感器芯片的表面的情况下进行无焊接焊接。为此，在通过焊接形成用于焊接的镍层和镍层的防氧化层的待接合构件的表面上，将该氧化防止层在焊接前形成为用于抑制镍暴露的膜厚度的上述镍层与待接合部件接受的热分升速度相关联的热等离子体收缩后的被接合部件的最外表面，在还原气氛中加热氧化防止层，使其熔融焊接箔并与另一个通过焊接接合的部件接合。通过这种布置，即使在焊接之前要接合的构件进行热分解，也可以有效地抑制作为基础接地的镍层的暴露于待接合构件的最外表面，从而基本上即使在焊接接合时施加在接合部上的负荷没有增加，也可以在接合部件的接合面上降低焊接润湿性，能够实现接合面上的令人满意的焊接润湿性，通过在还原气氛中加热来实现焊接的接合，能够提供高度密封的接合部的无焊剂焊接。因此，在将具有内置有高度集成型半导体电路的传感器芯片的压力传感器单元接合到金属杆上时，不需要将传感器芯片朝下的金属杆加载，从而不利于损坏表面可以消除传感器芯片。

2. 发明申请

WO1994014190A1 SURFACE STRUCTURE FOR SOLDERING AND NON-FLUX SOLDERING METHOD USING THE SAME 审中-公开
标题翻译：用于焊接和非通量焊接方法的表面结构
公开(公告)号：WO1994014190A1
公开(公告)日：1994-06-23
申请号：PCT/JP1993001788
申请日：1993-12-09
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , NIPPONDENSO CO., LTD. , FUJIKAWA, Hisayoshi , OHWAKI, Takeshi , TAGA, Yasunori , TAKENAKA, Osamu , KONDO, Kenji , YONEYAMA, Takao , KONDO, Ichiharu
发明人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , NIPPONDENSO CO., LTD.
IPC分类号： H01L21/52
CPC分类号： H01L24/32 , H01L23/4924 , H01L23/49513 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05556 , H01L2224/29111 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8319 , H01L2224/83801 , H01L2224/83825 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01021 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/12032 , H01L2924/12042 , H01L2924/15151 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2924/3512
摘要： A contact layer (11), a diffusion prevention layer (12) and a solder bond layer (13) are disposed on the back of a semiconductor substrate (10), and this solder bond layer (13) is joined to a bed (15) by a solder layer (14). The contact layer (11) comprises a rare earth metal film, a rare earth metal silicide film or their composite film, the diffusion prevention layer (12) comprises an iron-containing metal and the solder bond layer (13) comprises a Ni-Au alloy. Since the diffusion prevention layer (12) is constituted by the Fe-containing metal, diffusion of tin in the solder can be prevented, and the solder bond layer (13) comprising the Ni-Au alloy can keep excellent solderability and can reduce the number of layers of a laminate. The Ni-Au alloy is used for a surface treatment of at least one of the joint members, and is heated in a reducing atmosphere through a solder foil to obtain high air-tightness.
摘要翻译：接触层（11），扩散防止层（12）和焊料接合层（13）设置在半导体衬底（10）的背面上，并且该焊料接合层（13）接合到床（15））通过焊料层（14）。接触层（11）包括稀土金属膜，稀土金属硅化物膜或其复合膜，扩散防止层（12）包括含铁金属，焊料接合层（13）包含Ni-Au 合金。由于扩散防止层（12）由含Fe金属构成，因此可以防止锡在焊料中的扩散，并且包含Ni-Au合金的焊料接合层（13）可以保持良好的可焊性，并且可以减少数量的层压板。 Ni-Au合金用于至少一个接头构件的表面处理，并且通过焊锡箔在还原气氛中加热，以获得高气密性。

3. 发明申请

WO1997033357A1 ROTOR OF ROTARY MACHINE 审中-公开
标题翻译：旋转机转子
公开(公告)号：WO1997033357A1
公开(公告)日：1997-09-12
申请号：PCT/JP1996000515
申请日：1996-03-04
申请人： NIPPONDENSO CO., LTD. , OGISHIMA, Kenji , SHIGA, Tsutomu
发明人： NIPPONDENSO CO., LTD.
IPC分类号： H02K01/32
CPC分类号： H02K1/32
摘要： An air passage (523a) is defined in a rotor core (520) by a punch hole (523) opened in each core plate (521) so laminated as to constitute the rotor core (520), and communicating with each other. Because the core plates (521) are laminated under the state where they are rotated by a predetermined angle relative to one other, the air passage (523a) is twisted towards one of the sides in a circumferential direction. According to this construction, an air flow is generated in the air passage (523a) by the revolution of the rotor core (520), and the rotor core (520) can be cooled satisfactorily. This construction is also effective for blowing dust of wear of a brush.
摘要翻译：通过在每个芯板（521）上开口的冲孔（523）在转子芯（520）中限定空气通道（523a），以构成转子芯（520）并彼此连通。由于芯板（521）在相对于彼此旋转了预定角度的状态下被层叠，因此空气通道（523a）朝向圆周方向的一侧扭转。根据该结构，通过转子铁芯520的旋转，在空气通路523a中产生气流，能够令人满意地冷却转子铁心520。这种结构对于吹刷器的磨损灰尘也是有效的。

4. 发明申请

WO1996025016A1 COMMUNICATION SYSTEM 审中-公开
标题翻译：通讯系统
公开(公告)号：WO1996025016A1
公开(公告)日：1996-08-15
申请号：PCT/JP1995002406
申请日：1995-11-24
申请人： NIPPONDENSO CO., LTD. , TAGUCHI, Akemi , HYODO, Masahito
发明人： NIPPONDENSO CO., LTD.
IPC分类号： H04Q09/00
CPC分类号： B60R16/0315 , B60R2016/0322 , G05B19/0421 , H04Q9/14
摘要： A master device transmits a continuation (or stopping) message on a communication line without causing the message to collide with response messages continuously transmitted from a slave device in the communication channel. Upon elapsing a time T1 after the completion of the transmission of a request message, a fault diagnosing tester (5) (master) transmits the continuation message when the count value of an idle counter exceeds P3' and an engine controller (1) (slave) transmits the next response message when the count value of the idle counter exceeds P2' (>P3'). Thus, the continuation message can be transmitted from the tester (5) before the controller (1) transmits the next response message without causing both messages to collide with each other on the communication line.
摘要翻译：主设备在通信线路上发送连续（或停止）消息，而不会导致消息与在通信信道中从从设备连续发送的响应消息相冲突。在完成发送请求消息之后经过时间T1时，当空闲计数器的计数值超过P3'时，故障诊断测试器（5）（主机）发送继续消息，以及发动机控制器（1））当空闲计数器的计数值超过P2'（> P3'）时，发送下一个响应消息。因此，在控制器（1）发送下一个响应消息而不使两个消息在通信线路上相互冲突的情况下，可以从测试器（5）发送继续消息。

5. 发明申请

WO1996007571A1 BRAKE PRESSURE CONTROLLER FOR VEHICLES 审中-公开
标题翻译：制动压力控制器
公开(公告)号：WO1996007571A1
公开(公告)日：1996-03-14
申请号：PCT/JP1995001760
申请日：1995-09-04
申请人： NIPPONDENSO CO., LTD. , TANAKA, Eiji , KAWANO, Kyoji
发明人： NIPPONDENSO CO., LTD.
IPC分类号： B60T08/48
CPC分类号： B60T8/4291 , B60T8/348 , B60T8/365 , B60T8/4872 , B60T8/5037 , B60T8/5093
摘要： SM valves 50FL, 50FR are changed over to communication positions for opening a conduit at the time of turn-off of a power supply and to cut-off positions when power is supplied from a brake control device (30). Since these SM valves 50FL, 50FR have an integral structure with a pressure-regulating valve, the term "cut-off position" means the position (pressure-regulating position) at which they function as a pressure-regulating valve for opening the conduit when a pressure from W/C 2FL, 2FR side exceeding a predetermined level is applied. Throttles 50FLS, 50FRS for imparting a pressure between these throttles and an opening/closing position are disposed towards an M/C 34 side from the opening/closing position at which communication/cut-off of the SM valves 50FL, 50FR is made. In this way, vapor lock can be prevented by preventing aeration which occurs when a high oil pressure is applied to the M/C side.
摘要翻译：在从制动控制装置（30）供给电力时，将SM阀50FL，50FR切换为用于在电源断开时断开导管的通信位置和切断位置。由于这些SM阀50FL，50FR具有与压力调节阀一体的结构，所以术语“切断位置”是指作为用于打开管道的压力调节阀的位置（压力调节位置）施加来自W / C 2FL，2FR侧超过预定水平的压力。用于在这些节流阀之间施加压力和打开/关闭位置的节流阀50FLS，50FRS设置成从制造SM阀50FL，50FR的连通/切断的打开/关闭位置朝向M / C 34侧。以这种方式，可以通过防止在M / C侧施加高油压时发生的通气来防止气体锁定。

6. 发明申请

WO1996003236A1 METHOD OF MANUFACTURING PART HAVING UNDERCUT 审中-公开
标题翻译：制造部件的方法
公开(公告)号：WO1996003236A1
公开(公告)日：1996-02-08
申请号：PCT/JP1995001463
申请日：1995-07-21
申请人： NIPPONDENSO CO., LTD.
发明人： NIPPONDENSO CO., LTD. , KOUGA, Toshiya , MIYASHITA, Shu , FUJII, Hiroyuki , IMAI, Toshihiro
IPC分类号： B21K21/08
CPC分类号： B21K21/08 , B21K21/14
摘要： A method of manufacturing a part having an undercut, which is formed to have a predetermined diameter, in a simple way without the use of any split pattern. A stock material for a material (50a) being worked, disposed above a tapered portion (53) of the material (50a) is subjected to swaging by pressing of a sleeve punch (20). Simultaneously, the stock material for the material (50a) disposed in the vicinity of the tapered portion (53) is subjected toironing by a shoulder (12) of a die (10) to undergo bulging deformation. The stock material for the material (50a) disposed in the vicinity of the tapered portion (53) flows toward the axis of the material (50a) to be drawn diametrically until it abuts against the outer wall of a mandrel (30), and a hole (52) of the material (50a) is gently tapered to be reduced in diameter to have a diameter (d2). The stock material for the material (50a) in a range (L3) disposed below the tapered portion (53) of the material (50a) is not reduced in diameter owing to forward extrusion, and is extruded forward to form a blind hole (42) in the form of an undercut having a depth (L4) which corresponds to a depth (L3).
摘要翻译：在没有使用任何分割图案的情况下，以简单的方式制造具有底切的具有预定直径的部分的方法。在材料（50a）的锥形部分（53）的上方加工的材料（50a）的原料通过冲压套筒冲头（20）进行模锻。同时，通过模具（10）的肩部（12）对布置在锥形部分（53）附近的材料（50a）的原料进行环氧化，以进行膨胀变形。设置在锥形部分53附近的材料（50a）的原材料朝着材料（50a）的轴线流动以直径拉伸，直到其抵靠心轴（30）的外壁，并且材料（50a）的孔（52）被轻轻地锥形成直径减小以具有直径（d2）。在材料（50a）的锥形部分（53）下方的范围（L3）中的材料（50a）的原材料由于向前挤压而直径不减小，并且向前挤出以形成盲孔（42 ）具有深度（L4）对应于深度（L3）的底切的形式。

7. 发明申请

WO1994015360A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1994015360A1
公开(公告)日：1994-07-07
申请号：PCT/JP1993001866
申请日：1993-12-24
申请人： NIPPONDENSO CO., LTD. , MIURA, Shoji , IIDA, Makio , SUGISAKA, Takayuki , SAKAKIBARA, Toshio , ISHIHARA, Osamu
发明人： NIPPONDENSO CO., LTD.
IPC分类号： H01L21/76
CPC分类号： H01L29/7317 , H01L21/76264 , H01L21/76275 , H01L21/76286 , H01L29/0615 , H01L29/1075 , H01L29/1087 , H01L29/7322 , H01L2924/0002 , H01L2924/00
摘要： Both breakdown strength and integration degree of the device are enhanced. The PN junction of the buried collector region (3) and the region (4) for increasing the collector breakdown strength is reversely biased. The depletion layer reaches the side isolation region (9a) for isolating the collector breakdown strength increasing region (4) at their sides. The surrounding semiconductor region (14) adjacent to the region (4) through the isolation region (9a) has a potential which is more approximate to the base area (5) than to the buried collector region (3). As a result, the depletion layer is affected by the low potentials from both sides of the base region (5) and the circumferential semiconductor region (14). The field concentration at and near the corner sections between the side and bottom of the base region (5) are relaxed. Avalanche breakdown at these sections is suppressed, and the breakdown strength is thus enhanced.
摘要翻译：提高了器件的击穿强度和集成度。掩埋集电极区域（3）和区域（4）的PN结用于提高集电极击穿强度是相反的。耗尽层到达侧面隔离区域（9a），用于在其侧面隔离集电极击穿强度增加区域（4）。通过隔离区（9a）与区域（4）相邻的周围半导体区域（14）的电位比埋藏集电极区域（3）更靠近基极区域（5）。结果，耗尽层受到基极区域（5）和周向半导体区域（14）两侧的低电位的影响。在基部区域（5）的侧面和底部之间的角部和其附近的场浓度被放宽。抑制这些部位的雪崩击穿，从而提高击穿强度。

8. 发明申请

WO1994011703A1 PYRHELIOMETRIC SENSOR 审中-公开
标题翻译：光电传感器
公开(公告)号：WO1994011703A1
公开(公告)日：1994-05-26
申请号：PCT/JP1993001599
申请日：1993-11-04
申请人： NIPPONDENSO CO., LTD. , NUNOGAKI, Naochika , SHIRAI, Makoto , YAMADA, Manabu , MAEDA, Yutaka , NAKAMURA, Masaya , FUKUTANI, Masanori , AKIMOTO, Katsuhide
发明人： NIPPONDENSO CO., LTD.
IPC分类号： G01C01/00
CPC分类号： G01J1/4228 , B60H1/0075 , G01J1/0209 , G01J1/0271 , G01J1/04 , G01J1/0411 , G01J1/0437 , G01J2001/4266 , H01L31/02024 , H01L31/0203 , H01L31/02164 , H01L31/02325 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： This invention relates to a pyrheliometric sensor used particularly for control of an air conditioner mounted to a vehicle, and aims at providing a pyrheliometric sensor capable of precisely controlling and detecting a pyrheliometric heat load corresponding to the direction of solar rays. A shading film (23) is formed on the upper surface of a transparent substrate (21) (inclusion member) of a photosensor device (12), a light introduction hole (24) is formed at the center of this shading film (23) and photo-detection portions (22L, 22R) are formed on both right and left sides of the lower surface of the transparent substrate (21).
摘要翻译：本发明涉及一种特别用于控制安装在车辆上的空调器的紫外线传感器，其目的在于提供一种能够精确地控制和检测与太阳光线方向相对应的紫外线热负荷的紫外线传感器。在光传感器装置（12）的透明基板（21）（包含构件）的上表面上形成遮光膜（23），在遮光膜（23）的中心形成有光导入孔（24）并且在透明基板（21）的下表面的左右两侧形成有光检测部（22L，22R）。

9. 发明申请

WO1993008596A1 METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：WO1993008596A1
公开(公告)日：1993-04-29
申请号：PCT/JP1992001326
申请日：1992-10-12
申请人： NIPPONDENSO CO., LTD. , MIURA, Shoji , SUGISAKA, Takayuki , KOMURA, Atsushi , SAKAKIBARA, Toshio
发明人： NIPPONDENSO CO., LTD.
IPC分类号： H01L21/76
CPC分类号： H01L21/763 , H01L21/76264 , H01L21/76275 , H01L21/76281 , H01L21/76286 , H01L21/76802 , Y10S148/05 , Y10S148/135 , Y10S438/977
摘要： This invention is directed to prevent step breakage and short-circuit of wires resulting from steps of isolation trenches formed in an SOI substrate. An oxide film for a pad is formed on a main plane of an SOI layer formed on an insulating substrate and furthermore, a silicon nitride film and an SiO2 film are sequentially formed. Thereafter, isolation trenches reaching the insulating substrate are formed by RIE using the SiO2 film as the mask. An insulating film is then formed on the inner wall of the isolation grooves by thermal oxidation, and polycrystalline silicon is filled into the insolation trenches. This polycrystalline silicon is etched back while control is made so that the upper end of polycrystalline silicon inside the isolation trenches is above the upper end of the silicon nitride film, and the excessive polycrystalline silicon deposited on the substrate surface is removed. Next, polycrystalline silicon inside the isolation trenches and the silicon nitride film are used as an etching stopper to etch and remove the SiO2 film used as the mask at the time of the formation of the isolation trenches. Since this etching and removal of the SiO2 film used as the mask is carried out after polycrystalline silicon is filled into the isolation trenches, the oxide film for isolating the substrates inside the SOI substrate is not etched when the mask is removed. When the masking SiO2 film is etched and removed, polycrystalline silicon and the silicon nitride film inside the isolation trenches function as the etching stopper, and the oxide film for the pad as the lower layer and the insulating film formed on the inner wall of the trenches are prevented from being etched, and flatness in the trench portions is not lost.

10. 发明申请

WO1992012341A1 PRESSURE ACCUMULATION TYPE FUEL JETTING DEVICE 审中-公开
标题翻译：压力蓄能式燃油喷射装置
公开(公告)号：WO1992012341A1
公开(公告)日：1992-07-23
申请号：PCT/JP1992000017
申请日：1992-01-13
申请人： NIPPONDENSO CO., LTD. , KARIYA, Yasuhiro , IWANAGA, Takashi , MAGARIO, Kenji , KAWAGUCHI, Takayoshi , SHIMA, Nobuhiko , BAN, Mitsuru
发明人： NIPPONDENSO CO., LTD.
IPC分类号： F02M55/02
CPC分类号： F02D41/3845 , F02B3/06 , F02D41/3809 , F02D41/3836 , F02D2041/226 , F02D2200/0602 , F02D2250/04 , F02D2250/31 , F02M47/027 , F02M55/02 , F02M55/025 , F02M59/366 , F02M59/462 , F02M61/10 , F02M63/0007 , F02M63/0205 , F02M63/0225 , F02M2200/30
摘要： Reliability of a system, in which fuel pressurized by a high pressure supply pump is accumulated in a common rail, is affected a great deal when piping connected to the common rail is broken or pulsation of fuel injection occurs, because of high pressure of the fuel. This invention is to improve reliability of the system by incorporating a mechanism to prevent outflow of fuel from the common rail even when the piping is broken or a mechanism to attenuate the pulsation of pressurized fuel into pipings around the common rail.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式