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1. 发明专利

JPH0233809A DIELECTRIC PORCELAIN COMPOSITION 失效
公开(公告)号：JPH0233809A
公开(公告)日：1990-02-05
申请号：JP18488788
申请日：1988-07-25
申请人： NIPPON DENSO CO
发明人： OYA NOBUYUKI , SAWAKE TOSHIKI
IPC分类号： C04B35/00 , H01B3/12
摘要： PURPOSE:To obtain a porcelain composition at a temperature of 1,000 deg.C or below by using a dielectric porcelain composition expressed as (1-x).PbMoO4-(1-x).PbEO4(0

2. 发明专利

JPH01102874A HIGH FREQUENCY WAVE AND SURGE ABSORBING FILTER 失效
公开(公告)号：JPH01102874A
公开(公告)日：1989-04-20
申请号：JP25932887
申请日：1987-10-14
申请人： NIPPON DENSO CO
发明人： SAWAKE TOSHIKI , YAMAZAKI TORU , OYA NOBUYUKI
IPC分类号： H01G4/12 , H01G4/40 , H01R13/66 , H03H7/01
摘要： PURPOSE:To make it possible to cut off both high frequency noise and surge voltage by arranging a slender signal line for electrical signal transmission on one surface of a flat plate made of a dielectric material having both capacitance and varistor characteristics, arranging an installation electrode on almost entire part of the other surface, and forming a distributed constant type condenser and a varistor between the signal line and a grounding electrode. CONSTITUTION:While an electrical signal is transmitted via a connector pin 5, a filter 10, and pins 6, 7, the filter 10 is provided with a ceramic base board 12 having both capacitance and varistor characteristics between metallic strips 14, 15 and a grounding electrode 16. A distributed constant type circuit is formed along the length of the signal line as shown in the equivalent circuit with a condenser C, conductance G and varistor V. Here, if the capacitance C of the base board 12 and the conductance G are made to have characteristics that the capacitance decreases as the frequency increases, and the frequency characteristic of the conductance is made of an arch shape, high frequency noise can be cut off. This makes it possible to cut off high frequency noise and surge voltage due to radio interference.

3. 发明专利

JPS6417513A HIGH FREQUENCY FILTER 失效
公开(公告)号：JPS6417513A
公开(公告)日：1989-01-20
申请号：JP17436287
申请日：1987-07-13
申请人： NIPPON DENSO CO
发明人： SAWAKE TOSHIKI , YAMAZAKI TORU , OYA NOBUYUKI
IPC分类号： H03H7/01
摘要： PURPOSE:To suppress crosstalk by setting up the plate thickness of a dielectric substrate, a distance between signal electrodes, the line lengths of the signal electrodes, and the specific dielectric constant of a dielectric substance at 1KHz frequency so that a specific inequality is satisfied. CONSTITUTION:Plural U-shaped lead pins 22 are arranged so as to be respectively connected to the signal electrodes 14 on the dielectric substrates 10 to constitute signal line electrodes. When a signal is inputted from one terminal 24 of the pin 22, high frequency noise is by-passed to an earth electrode 20 through the substrates 10 and only a signal component is transmitted to the other terminal 26. When it is defined that the plate thickness of the substrate 10 is Tmm, the distance between the electrodes 14 is Wmm, the line length of the electrode 14 is Lmm, and the specific dielectric constant of the dielectric substance at 1KHz frequency is epsilon, the plate thickness T, the inter-electrode distance W, the line length L, and the specific dielectric constant epsilon are set up so that the inequality is satisfied. The left side of the inequality corresponds to inter-line capacity pF and the crosstalk can be suppressed within 1% by suppressing the inter-line capacity to 100pF or less.

4. 发明专利

JPS63296325A MANUFACTURE OF SEMICONDUCTOR CAPACITOR MATERIAL 失效
公开(公告)号：JPS63296325A
公开(公告)日：1988-12-02
申请号：JP13220187
申请日：1987-05-28
申请人： NIPPON DENSO CO , NAT INST RES INORGANIC MAT
发明人： SAWAKE TOSHIKI , OYA NOBUYUKI , SHIRASAKI SHINICHI
IPC分类号： H01G4/12 , H01B3/00
摘要： PURPOSE:To increase the capacitance of a grain boundary layer insulated type semiconductor capacitor and reduce the dispersion of capacitance by preparing SrTiO3 group raw material powder having excellent dispersibility in a submicron class and manufacturing a desired composition raw material by mixing through a mere dry method by using the powder. CONSTITUTION:Either of the mixed liquid of a proper quantity of at least one component except Sr and a proper quantity of an Sr solution or the mixed liquid of a proper quantity of at least one component except Ti and a proper quantity of a Ti solution is prepared, the mixed liquid and a precipitate forming liquid are mixed to form a co-precipitate, and the co-precipitate is dried and calcined at 600-1200 deg.C. A calcined body acquired and the compound of residual ingredients having an aimed composition are mixed, and calcined at 700-1300 deg.C and molded, or molded and calcined. A molded form obtained is baked in a reducing atmosphere at 1300-1600 deg.C, thus shaping a semiconductor element material. Accordingly, sintered body particles, which have large diameters and are arranged in monodispersion, can be acquired simply, thus increasing the capacitance of a grain boundary layer insulated type semiconductor capacitor and reducing the dispersion of capacitance thereof.

5. 发明专利

JPS63292614A MANUFACTURE OF GRAIN BOUNDARY LAYER TYPE SEMICONDUCTOR CERAMICS CAPACITOR 失效
公开(公告)号：JPS63292614A
公开(公告)日：1988-11-29
申请号：JP12721587
申请日：1987-05-26
申请人： NIPPON DENSO CO , NAT INST RES INORGANIC MAT
发明人： SAWAKE TOSHIKI , OYA NOBUYUKI , SHIRASAKI SHINICHI
IPC分类号： H01B3/12 , H01G4/12
摘要： PURPOSE:To obtain a ceramics capacitor enabling firing at a relatively low temperature and having large capacity with small dispersion of capacity, by making an SrTiO3 system of denatured oxide raw material powder of a submicron order having good dispersibility in grain diameter control for making this powder into a composite raw material by mixing this powder. CONSTITUTION:A solution which contains a proper quantity of at least one kind of metallic components except Sr or Ti of the chemical formula expressed by Sr1-x-yBaxGayTiO3 and Sr or Ti is made. Next, this solution is hydrolyzed to generate a sol and this sol is dried and temporarily fired at 600-1200 deg.C to be made into a calcined substance. As a result, denatured powder of a submicron order, for instance, SrTiO3 powder is obtained as the calcined substance, and this denatured powder has extremely good dispersion so as to be hard to generate cohesion of grains. Subsequently, this temporary-fired substance and a compound of the remaining constitutive components of perovskite structure are mixed to be temporary-fired at 700-1300 deg.C for being made into calcined powder. The calcined powder is fired in a reducing atmosphere of 1300-1600 deg.C to be made into a ceramic. Ti, Mn, Fe, Co, Ni, Cu, B, Pb, Bi, La, Pr and Tm are diffused in a grain boundary at 800-1300 deg.C to obtain the intended ceramic capacitor.

6. 发明专利

JPS63291305A MANUFACTURE OF DIELECTRIC RESONATOR MATERIAL 失效
公开(公告)号：JPS63291305A
公开(公告)日：1988-11-29
申请号：JP12537287
申请日：1987-05-22
申请人： NIPPON DENSO CO , NAT INST RES INORGANIC MAT
发明人： OYA NOBUYUKI , SAWAKE TOSHIKI , SHIRASAKI SHINICHI
IPC分类号： C04B35/00 , C04B35/495 , C04B35/64 , H01B3/00 , H01P11/00
摘要： PURPOSE:To secure such a material that is high in Q value by using Ba(Zn1/3 Nbx/3Ta(1-x)/3)O3 system ceramics for dielectric resonator material, forming the ceramics into modified material powder of a submicron grade, and mixing another material powder in this, then burning it. CONSTITUTION:When Ba(Zn1/3Nbx/3Ta(1-x)/3)O3 system ceramics are manufactured, it is performed by dividing the process into three parts ranging from first to third ones. At the first process, a mixed solution consisting of at least one component other than Zn and a Zn solution, a mixed solution consisting of at least one component other than Ba and Ba solution and a mixed solution consisting of at least one component other than Nb and an Nb solution are all produced, setting these solutions down to a coprecipitating body each, and after being dried up, it is calcined at a temperature of 700-1300 deg.C. Here, another component is a small amount of sintering assistant for which Zr, Mg, Sc, Hf or the like are used. Next, at the second process, powder of the obtained calcined material and powder of the remaining component of the target perovskite composition are mixed and calcined at a temperature of 700-1300 deg.C. At the next third process, powder of the obtained calcined material is molded and completely baked at a temperature of 1200-1700 deg.C.

7. 发明专利

JPS63153871A MANUFACTURE OF MATERIAL FOR DIELECTRIC RESONATOR 失效
公开(公告)号：JPS63153871A
公开(公告)日：1988-06-27
申请号：JP30089786
申请日：1986-12-17
申请人： NIPPON DENSO CO , NAT INST RES INORGANIC MAT
发明人： OYA NOBUYUKI , SAWAKE TOSHIKI , SHIRASAKI SHINICHI
IPC分类号： C04B35/49 , H01B3/00 , H01B3/12 , H01L41/39
摘要： PURPOSE:To obtain a (Zr, Sn) TiO4 ceramics which is minute, has a high dielectric constant and has a specially high Q value by a method wherein the mixed solution of at least one component other than Zr and Zr solution is hydrolyzed, the powder calcinated after drying and the powder containing the residual component of the purposed composition are mixed to calcinate and the obtained calcinated material powder is molded and calcined. CONSTITUTION:In manufacture of a (ZrxSn1-x) TiO4 ceramics, first the mixed solution of at least one component other than Zr and Zr solution is produced as the first step, hydrolyzed and calcinated after drying. The obtained calcinated material powder and the powder containing the residual component of the purposed composition are mixed, and the mixture is calcinated, molded and calcined. In the first step, such aqueous solution as zirconium oxychloride or alcohol solution is used as the Zr solution, Sn solution and Ti solution. The molar ratio of (ZrxSn1-x) to Ti is set at 1.0 or at a value approximated to that.

8. 发明专利

JPH08216876A IN-PIPE TRAVELING DEVICE 失效
公开(公告)号：JPH08216876A
公开(公告)日：1996-08-27
申请号：JP2522395
申请日：1995-02-14
申请人： NIPPON DENSO CO
发明人： KAWAKITA SHINICHIRO , OYA NOBUYUKI , IDOGAKI KOJI
IPC分类号： G01N21/84 , B23Q5/28 , B25J5/00 , B61B13/10 , B62D57/024 , B81B7/02 , G02B23/24
摘要： PURPOSE: To provide an in-pipe traveling device that is travelable in a state that the whole device keeps a stable attitude in a pipeline as in stableness. CONSTITUTION: This device is provided with an inertial body 1 and two piezoelectric elements 21 and 2b being connected to this inertial body and expansibly deformed by way of the impression and release of voltage. In this in-pipe traveling device, traveling by means of inertly driving the inertial body 1 with these piezoelectric elements 2a and 2b, each two of pins 4a, 4b and 4c, 4d in contact with a pipe wall each is installed in both ends in front and in the rear of the device, and these two by two pins 4a, 4b and 4c, 4d are symmetrically installed with one another to the center shaft. Since two by two pins are installed in both front and rear ends at the symmetrical position, these pins come to contact with the inner surface of a diametral part of a pipeline, whereby this device can be kept in a stable attitude, and thus even in the case of movements, this device can be kept in the stable attitude.

9. 发明专利

JPH08207756A IN-HOLE SELF-TRAVELING SURVEY INSTRUMENT 失效
公开(公告)号：JPH08207756A
公开(公告)日：1996-08-13
申请号：JP1698395
申请日：1995-02-03
申请人： NIPPON DENSO CO
发明人： KANAYAMA HITOSHI , OYA NOBUYUKI , IDOGAKI KOJI
IPC分类号： G01N29/26 , B61B13/10 , B62D57/024 , B81B7/02 , G21C17/003 , G21C17/08
摘要： PURPOSE: To provide an in-hole self-traveling inspection instrument that can keep spaces between plural sensors and the inner wall surface of a hole almost constant in spite of the inclination of the inspection instrument in the hole or the bending of the hole. CONSTITUTION: An in-hole self-traveling inspection instrument is provided with a piezoelectric laminated actuator 1 expanded by applied voltage, a weight 2 fixed to one end of the actuator 1, a leg part 3 fixed to the other end of the actuator 1 and brought into contact with the inner wall surface W forming a surrounding hole, sensors 4 held to the actuator 1 or the leg part 3 so as to be provided near the inner wall surface W with which the leg part 3 comes in contact, and a control means for supplying applied voltage to the actuator 1. Since the sensors 4 are provided near the inner wall surface W with which the leg part 3 comes in contact, spaces between the sensors 4 and the inner wall surface W hardly change in spite of a slanting attitude to the hole or the bending of the hole, so that stable sensor output can be obtained.

10. 发明专利

JPH08117686A OBLIQUELY INSTALLED PROJECTION VIBRATION TYPE MOVING DEVICE 失效
公开(公告)号：JPH08117686A
公开(公告)日：1996-05-14
申请号：JP26288394
申请日：1994-10-26
申请人： NIPPON DENSO CO
发明人： TOMINAGA TAKAYUKI , SENDA KOUJI , OYA NOBUYUKI , IDOGAKI KOJI
IPC分类号： B06B1/06 , B81B7/02 , H01L41/09
摘要： PURPOSE: To provide a obliquely installed projection vibration type moving device which is easily ascendable and climbable against gravity in a piping or channel and is well ascendable or climbable even if a traveling surface is slippery and a freely advanceable and retreatable obliquely installed projection vibration type moving device. CONSTITUTION: The obliquely installed projections 3 fixed to diaphragms 1 are brought into pressurized contact with the traveling surface 100 consisting of the inside surface of the piping or channel by power feeding from a power source (driving section) 2 and are vibrated by the driving section 2 in first constitution. Further, the driving section 2 sets the average value of the pressurized contact force to energize the obliquely installed projections 3 via the diaphragms 1 toward the traveling surface 100 at a desired value and, therefore, adequate propulsion is obtd.; in addition, the traveling, climbing and ascending are realized regardless of the internal width and change in the coefft. of friction of the piping. A pair of the devices of the same constitution as the constitution of the first constitution are prepd. in second constitution and both diaphragms 1 are connected. The propulsion direction of the obliquely installed projections 3 of both diaphragms 1 are reversed and the amplitude or frequency of the vibration or pressurized contact force generated by both devices is controlled, by which the advancing and retreating are made possible.

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