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    • 4. 发明专利
    • MANUFACTURE OF DIELECTRIC RESONATOR MATERIAL
    • JPS63291306A
    • 1988-11-29
    • JP12537387
    • 1987-05-22
    • NIPPON DENSO CONAT INST RES INORGANIC MAT
    • OYA NOBUYUKISAWAKE TOSHIKISHIRASAKI SHINICHI
    • C04B35/00C04B35/64H01B3/00H01P11/00
    • PURPOSE:To secure such a material that is high in Q-value by using Ba(Zn1/3 Me2/3)O3 system ceramics (Me is either of Nb and Ta) for dielectric resonator material, forming this into modified material powder of a submicron grade, and mixing another material powder in this powder, then sintering it. CONSTITUTION:When Ba(Zn1/3Me2/3)O3 system ceramics are manufactured, it is performed by dividing the process into three parts ranging from first to third ones. At the first process, a mixed solution consisting of at least one component other than Ba and Ba solution and another mixed solution consisting of at least one component other than Zn and a Zn solution both are produced, setting these solutions down to a coprecipitating material, and after being dried up, it is calcined at a temperature of 700-1300 deg.C. Here, another component is a small amount of sintering assistant for which Zr, Mg, Sc, Hf, Th or the like are used. At the second process, powder of the previously obtained calcined material and the remaining component of the target perovskite composition are mixed together and calcined at a temperature of 700-1300 deg.C. At the next third process, the obtained calcined material is molded and completely baked at a temperature of 1200-1700 deg.C.
    • 7. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR CAPACITOR MATERIAL
    • JPS63296325A
    • 1988-12-02
    • JP13220187
    • 1987-05-28
    • NIPPON DENSO CONAT INST RES INORGANIC MAT
    • SAWAKE TOSHIKIOYA NOBUYUKISHIRASAKI SHINICHI
    • H01G4/12H01B3/00
    • PURPOSE:To increase the capacitance of a grain boundary layer insulated type semiconductor capacitor and reduce the dispersion of capacitance by preparing SrTiO3 group raw material powder having excellent dispersibility in a submicron class and manufacturing a desired composition raw material by mixing through a mere dry method by using the powder. CONSTITUTION:Either of the mixed liquid of a proper quantity of at least one component except Sr and a proper quantity of an Sr solution or the mixed liquid of a proper quantity of at least one component except Ti and a proper quantity of a Ti solution is prepared, the mixed liquid and a precipitate forming liquid are mixed to form a co-precipitate, and the co-precipitate is dried and calcined at 600-1200 deg.C. A calcined body acquired and the compound of residual ingredients having an aimed composition are mixed, and calcined at 700-1300 deg.C and molded, or molded and calcined. A molded form obtained is baked in a reducing atmosphere at 1300-1600 deg.C, thus shaping a semiconductor element material. Accordingly, sintered body particles, which have large diameters and are arranged in monodispersion, can be acquired simply, thus increasing the capacitance of a grain boundary layer insulated type semiconductor capacitor and reducing the dispersion of capacitance thereof.
    • 8. 发明专利
    • MANUFACTURE OF GRAIN BOUNDARY LAYER TYPE SEMICONDUCTOR CERAMICS CAPACITOR
    • JPS63292614A
    • 1988-11-29
    • JP12721587
    • 1987-05-26
    • NIPPON DENSO CONAT INST RES INORGANIC MAT
    • SAWAKE TOSHIKIOYA NOBUYUKISHIRASAKI SHINICHI
    • H01B3/12H01G4/12
    • PURPOSE:To obtain a ceramics capacitor enabling firing at a relatively low temperature and having large capacity with small dispersion of capacity, by making an SrTiO3 system of denatured oxide raw material powder of a submicron order having good dispersibility in grain diameter control for making this powder into a composite raw material by mixing this powder. CONSTITUTION:A solution which contains a proper quantity of at least one kind of metallic components except Sr or Ti of the chemical formula expressed by Sr1-x-yBaxGayTiO3 and Sr or Ti is made. Next, this solution is hydrolyzed to generate a sol and this sol is dried and temporarily fired at 600-1200 deg.C to be made into a calcined substance. As a result, denatured powder of a submicron order, for instance, SrTiO3 powder is obtained as the calcined substance, and this denatured powder has extremely good dispersion so as to be hard to generate cohesion of grains. Subsequently, this temporary-fired substance and a compound of the remaining constitutive components of perovskite structure are mixed to be temporary-fired at 700-1300 deg.C for being made into calcined powder. The calcined powder is fired in a reducing atmosphere of 1300-1600 deg.C to be made into a ceramic. Ti, Mn, Fe, Co, Ni, Cu, B, Pb, Bi, La, Pr and Tm are diffused in a grain boundary at 800-1300 deg.C to obtain the intended ceramic capacitor.
    • 9. 发明专利
    • MANUFACTURE OF DIELECTRIC RESONATOR MATERIAL
    • JPS63291305A
    • 1988-11-29
    • JP12537287
    • 1987-05-22
    • NIPPON DENSO CONAT INST RES INORGANIC MAT
    • OYA NOBUYUKISAWAKE TOSHIKISHIRASAKI SHINICHI
    • C04B35/00C04B35/495C04B35/64H01B3/00H01P11/00
    • PURPOSE:To secure such a material that is high in Q value by using Ba(Zn1/3 Nbx/3Ta(1-x)/3)O3 system ceramics for dielectric resonator material, forming the ceramics into modified material powder of a submicron grade, and mixing another material powder in this, then burning it. CONSTITUTION:When Ba(Zn1/3Nbx/3Ta(1-x)/3)O3 system ceramics are manufactured, it is performed by dividing the process into three parts ranging from first to third ones. At the first process, a mixed solution consisting of at least one component other than Zn and a Zn solution, a mixed solution consisting of at least one component other than Ba and Ba solution and a mixed solution consisting of at least one component other than Nb and an Nb solution are all produced, setting these solutions down to a coprecipitating body each, and after being dried up, it is calcined at a temperature of 700-1300 deg.C. Here, another component is a small amount of sintering assistant for which Zr, Mg, Sc, Hf or the like are used. Next, at the second process, powder of the obtained calcined material and powder of the remaining component of the target perovskite composition are mixed and calcined at a temperature of 700-1300 deg.C. At the next third process, powder of the obtained calcined material is molded and completely baked at a temperature of 1200-1700 deg.C.