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1. 发明申请

WO2011099858A1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 审中-公开
标题翻译：在基材上沉积原子层的方法和装置
公开(公告)号：WO2011099858A1
公开(公告)日：2011-08-18
申请号：PCT/NL2011/050100
申请日：2011-02-11
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
发明人： VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译：在基板上沉积原子层的方法。该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。前体气体从前体气体供应源朝向基底提供。该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。

2. 发明申请

WO2009123459A1 METHOD FOR TREATING A METAL OXIDE LAYER 审中-公开
标题翻译：用于处理金属氧化物层的方法
公开(公告)号：WO2009123459A1
公开(公告)日：2009-10-08
申请号：PCT/NL2009/050176
申请日：2009-04-06
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , VAN DEELEN, Joop , POODT, Paulus Willibrordus George
发明人： VAN DEELEN, Joop , POODT, Paulus Willibrordus George
IPC分类号： C23C14/08 , C23C14/58 , H01L31/0224 , H01L31/18
CPC分类号： C23C14/086 , C23C8/36 , C23C14/5826 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying an atmospheric plasma process at a low temperature. Preferably, the temperature during the plasma process is lower than 180 -C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.
摘要翻译：本发明涉及一种处理沉积在基板上的金属氧化物层的方法。该方法包括在低温下施加大气等离子体工艺的步骤。优选地，等离子体处理期间的温度低于180℃。此外，大气等离子体处理可以应用于包括H 2气体和He气体的等离子体室中。

3. 发明申请

WO2013169109A1 ADJUSTABLE CHEMICAL VAPOUR DEPOSITION PROCESS AND REACTOR 审中-公开
标题翻译：可调式化学气相沉积工艺和反应器
公开(公告)号：WO2013169109A1
公开(公告)日：2013-11-14
申请号：PCT/NL2013/050349
申请日：2013-05-08
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： VAN DEELEN, Joop
IPC分类号： C23C16/455 , C23C16/40 , H01J37/32
CPC分类号： C23C16/407 , C23C16/45589 , H01J37/32449
摘要： The invention relates to a chemical vapour deposition process and to a reactor for a chemical vapour deposition process In an aspect, the invention relates to a chemical vapour deposition process for preparing a layer of a solid material on a substrate, comprising: passing a gas flow comprising a precursor of the solid material through a gas flow pathway and over the substrate, wherein a control of the gas flow over the substrate mitigates effects on the gas flow of accretion of said solid material on a boundary surface of the gas flow path way by adjusting, while the gas flow is passed over the substrate, a dimension of the gas flow pathway upstream, downstream and/or at the substrate.
摘要翻译：本发明涉及一种化学气相沉积工艺和一种用于化学气相沉积工艺的反应器。一方面，本发明涉及一种用于在基材上制备固体材料层的化学气相沉积工艺，包括：将气流包括固体材料的前体，通过气体流动路径和衬底上，其中对衬底上的气体流动的控制减轻了对气体流动路径的边界表面上所述固体材料的吸积的气体流动的影响，当气体流过衬底时，调节气体流动路径的上游，下游和/或衬底处的尺寸。

4. 发明公开

EP2271786A1 METHOD FOR TREATING A METAL OXIDE LAYER 审中-公开
标题翻译：法处理的金属
公开(公告)号：EP2271786A1
公开(公告)日：2011-01-12
申请号：EP09728765.0
申请日：2009-04-06
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： VAN DEELEN, Joop , POODT, Paulus Willibrordus George
IPC分类号： C23C14/08 , C23C14/58 , H01L31/0224 , H01L31/18
CPC分类号： C23C14/086 , C23C8/36 , C23C14/5826 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying an atmospheric plasma process at a low temperature. Preferably, the temperature during the plasma process is lower than 180 -C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.

5. 发明公开

EP2534278A1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 有权转让
标题翻译：方法和装置存款核层上的衬底
公开(公告)号：EP2534278A1
公开(公告)日：2012-12-19
申请号：EP11704333.1
申请日：2011-02-11
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

6. 发明授权

EP2534278B8 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 有权转让
公开(公告)号：EP2534278B8
公开(公告)日：2015-05-27
申请号：EP11704333.1
申请日：2011-02-11
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

7. 发明授权

EP2534278B1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 有权转让
标题翻译：用于在衬底上沉积原子层的方法和设备
公开(公告)号：EP2534278B1
公开(公告)日：2015-04-01
申请号：EP11704333.1
申请日：2011-02-11
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
发明人： VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

8. 发明申请

WO2004025748A1 PHOTOVOLTAIC DEVICE COMPRISING A 1,3,5-TRIS-AMINOPHENYL-BENZENE COMPOUND 审中-公开
标题翻译：包含1,3,5-三氨基苯乙烯化合物的光伏器件
公开(公告)号：WO2004025748A1
公开(公告)日：2004-03-25
申请号：PCT/EP2002/010120
申请日：2002-09-10
申请人： AGFA-GEVAERT , ANDRIESSEN, Hieronymus , VAN DEELEN, Joop , WIENK, Martijn , KROON, Jan
发明人： ANDRIESSEN, Hieronymus , VAN DEELEN, Joop , WIENK, Martijn , KROON, Jan
IPC分类号： H01L51/20
CPC分类号： H01L51/4226 , H01L51/0059 , H01L51/0064 , H01L51/0086 , H01L2251/306 , Y02E10/549
摘要： A photovoltaic device comprising a n-type semiconductor with a band-gap of greater than 2.9 eV, a spectral sensitizer and a 1,3,5-tris-aminophenyl-benzene compound represented by formula (I): wherein R1 represents a -NR3R4 group, wherein R3 and R4, same or different, represents a C2-C10 alkyl group including the alkyl groups in substituted form, a benzyl group, a cycloalkyl group, or an aryl group, and R2 represents hydrogen, an alkyl group including a substituted alkyl group or halogen; and the 1,3,5-tris-aminophenyl-benzene compound is optionally in a cationic form; and a process for preparing the above-mentioned photovoltaic device with at least one transparent electrode comprising the steps of: providing a support with a conductive layer as one electrode; coating the conductive layer on the support with a layer comprising the n-type semiconductor with a bandgap of greater than 2.9 eV; coating the n-type semiconductor-containing layer with a solution or dispersion comprising the 1,3,5-tris-aminophenyl-benzene compound, or cation thereof, to provide after drying a layer comprising the 1,3,5-tris-aminophenyl-benzene compound; and applying a conductive layer to the layer comprising the 1,3,5-tris-aminophenyl-benzene compound thereby providing a second electrode.
摘要翻译：一种光电器件，包括具有大于2.9eV的带隙的n型半导体，光谱增感剂和由式（I）表示的1,3,5-三氨基苯基 - 苯化合物：其中R1表示-NR3R4 基团，其中R3和R4相同或不同，表示包括取代基的烷基，苄基，环烷基或芳基的C2-C10烷基，R2表示氢，包括取代基的烷基烷基或卤素; 1,3,5-三氨基苯基 - 苯化合物任选呈阳离子形式; 以及用于制备具有至少一个透明电极的上述光电器件的方法，包括以下步骤：提供具有作为一个电极的导电层的支撑体; 用包含大于2.9eV的带隙的n型半导体层涂覆载体上的导电层; 用包含1,3,5-三氨基苯基 - 苯化合物或其阳离子的溶液或分散体涂覆含n型半导体层，以在干燥后包含1,3,5-三氨基苯基 - - 苯化合物; 以及将导电层施加到包含1,3,5-三氨基苯基 - 苯化合物的层上，从而提供第二电极。

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