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1. 发明申请

WO2011099858A1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 审中-公开
标题翻译：在基材上沉积原子层的方法和装置
公开(公告)号：WO2011099858A1
公开(公告)日：2011-08-18
申请号：PCT/NL2011/050100
申请日：2011-02-11
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
发明人： VERMEER, Adrianus Johannes Petrus Maria , ROOZEBOOM, Freddy , VAN DEELEN, Joop
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译：在基板上沉积原子层的方法。该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。前体气体从前体气体供应源朝向基底提供。该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。

2. 发明申请

WO2011105908A1 APPARATUS AND METHOD FOR REACTIVE ION ETCHING 审中-公开
标题翻译：用于反应离子蚀刻的装置和方法
公开(公告)号：WO2011105908A1
公开(公告)日：2011-09-01
申请号：PCT/NL2011/050138
申请日：2011-02-25
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO , ROOZEBOOM, Freddy , LANKHORST, Adriaan Marinus , POODT, Paulus Willibrordus George , KOSTER, Norbertus Benedictus , WINANDS, Gerardus Johan Jozef , VERMEER, Adrianus Johannes Petrus Maria
发明人： ROOZEBOOM, Freddy , LANKHORST, Adriaan Marinus , POODT, Paulus Willibrordus George , KOSTER, Norbertus Benedictus , WINANDS, Gerardus Johan Jozef , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： H01L21/00 , H01L21/3065 , C23C16/455 , H01J37/32
CPC分类号： H01L21/3065 , C23C16/0245 , C23C16/45525 , H01J37/32366 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J37/32706 , H01J2237/3341 , H01L21/30655 , H01L21/67028
摘要： The invention relates to an apparatus (1) for reactive ion etching of a substrate (5), comprising: a plasma etch zone (2) including an etch gas supply (40) and arranged with a plasma generating structure (22) for igniting a plasma (4) and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate (5); a passivation zone (3) including a cavity (8) provided with a passivation gas supply (41); said supply (41) arranged for providing a passivation gas flow from the supply to the cavity (8); the cavity (8) in use being bounded by the injector head (1) and the substrate surface; and a gas purge structure (7) comprising a gas exhaust (6) arranged between said etch zone (2) and passivation zone (3); the gas purge structure (7) thus forming a spatial division of the etch (2) and passivation (3) zones.
摘要翻译：本发明涉及一种用于衬底（5）的反应离子蚀刻的设备（1），包括：等离子体蚀刻区（2），其包括蚀刻气体供应（40）并且布置有等离子体产生结构（22），用于点燃等离子体（4）并且包括电极结构，其布置成将蚀刻等离子体加速到衬底部分以使离子撞击在衬底（5）的表面上; 包括设置有钝化气体供应源（41）的空腔（8）的钝化区（3）; 所述供应装置（41）布置成提供从所述供应源到所述空腔（8）的钝化气体流; 所述腔（8）在使用中由所述注射器头（1）和所述基底表面限定; 和气体吹扫结构（7），其包括布置在所述蚀刻区（2）和钝化区（3）之间的排气（6）。气体吹扫结构（7）因此形成蚀刻（2）和钝化（3）区域的空间划分。

3. 发明申请

WO2015199539A1 PLASMA SOURCE AND SURFACE TREATMENT METHOD 审中-公开
标题翻译：等离子体源和表面处理方法
公开(公告)号：WO2015199539A1
公开(公告)日：2015-12-30
申请号：PCT/NL2015/050463
申请日：2015-06-25
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： CREYGHTON, Yves Lodewijk Maria , POODT, Paulus Willibrordus George , SIMOR, Marcel , ROOZEBOOM, Freddy
IPC分类号： C23C16/455 , C23C16/513 , H01J37/32 , H05H1/24 , H01L21/314
CPC分类号： C23C16/45514 , C23C16/45504 , C23C16/45536 , C23C16/4583 , C23C16/509 , C23C16/513 , H01J37/32348 , H01J37/32366 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32825 , H01J2237/332 , H05H1/2406 , H05H2001/2412
摘要： Plasma source and surface treatment method. A plasma source has an outer surface (12), interrupted by an aperture (14) for delivering an atmospheric plasma from the outer surface. A transport mechanism (11) transports a substrate (10) in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode (16a,b) of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode (17) covered at least partly by a dielectric layer (18) is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet (19a,b) feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.
摘要翻译：等离子体源和表面处理方法。等离子体源具有由用于从外表面输送大气等离子体的孔（14）中断的外表面（12）。输送机构（11）将与外表面平行的基板（10）紧密地输送到外表面，使得来自大气等离子体的气体可以在外表面和基板之间形成气体轴承。等离子体源的第一电极（16a，b）具有从沿着孔径延伸的第一电极的边缘延伸的第一和第二表面。第一表面限定孔的第一侧上的外表面。第一和第二表面之间的距离随着与边缘的距离而增加。至少部分地由电介质层（18）覆盖的第二电极（17）设置有介电层面向第一电极的第二表面，基本上与第一电极的第二表面平行，留下等离子体引发空间所述孔的所述第一侧在介电层的表面和第一电极的第二表面之间。气体入口（19a，b）进入等离子体引发空间，以通过等离子体引发空间提供从气体入口到孔的气流。在等离子体起始空间中引发的大气等离子体流入孔，离开该孔与基板的表面反应。

4. 发明申请

WO2013022339A1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 审中-公开
标题翻译：在基材上沉积原子层的方法和装置
公开(公告)号：WO2013022339A1
公开(公告)日：2013-02-14
申请号：PCT/NL2012/050540
申请日：2012-07-30
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , KNAAPEN, Raymond Jacobus Wilhelmus , OLIESLAGERS, Ruud , VAN DEN BERG, Dennis , VAN DEN BOER, Matijs C. , MAAS, Diederik Jan , VAN DER DONCK, Jacques Cor Johan , ROOZEBOOM, Freddy
发明人： KNAAPEN, Raymond Jacobus Wilhelmus , OLIESLAGERS, Ruud , VAN DEN BERG, Dennis , VAN DEN BOER, Matijs C. , MAAS, Diederik Jan , VAN DER DONCK, Jacques Cor Johan , ROOZEBOOM, Freddy
IPC分类号： C23C16/44 , C23C16/52 , C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45589 , C23C16/4401 , C23C16/4409 , C23C16/45517 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/45587 , C23C16/4586 , C23C16/4588 , C23C16/52 , C23C16/545
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.
摘要翻译：在基板上沉积原子层的方法。该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。前体气体从前体气体供应源朝向基底提供。该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。该方法还包括在旋转轨迹的第一部分上将来自前体气体供应的前体气体供给朝向基底的切换; 并且中断在旋转轨迹的第二部分上从前体气体供应源提供前体气体。

5. 发明申请

WO2021187982A1 A METHOD OF MANUFACTURING A SEMI-CONDUCTING THIN FILM DEVICE 审中-公开
公开(公告)号：WO2021187982A1
公开(公告)日：2021-09-23
申请号：PCT/NL2021/050182
申请日：2021-03-17
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： MAMELI, Alfredo , KRONEMEIJER, Auke Jisk , ROOZEBOOM, Freddy
IPC分类号： H01L21/033 , H01L29/40
摘要： The present disclosure relates to a method of manufacturing a thin film device (100). A multilevel nanoimprint lithography template (20) is transferred into a thin film stack comprising an electrode layer (11) and a blanket sacrificial layer (12) covering the electrode layer. The template is transferred, thereby patterning the device (100) and exposing a predefined insulating area (A2) of the electrode while keeping a remaining portion (12a) of the sacrificial layer that covers a pre-defined electrical contact area (A1) of the electrode. An area selective ALD process is performed to selectively cover the exposed area of the electrode layer with a cover layer. After removing the remaining portion (12a) of the sacrificial layer (12) the electrical contact; area (A1) of the electrode layer (11) is exposed for further processing.

6. 发明申请

WO2021096359A1 AREA SELECTIVE ATOMIC LAYER DEPOSITION METHOD AND TOOL 审中-公开
公开(公告)号：WO2021096359A1
公开(公告)日：2021-05-20
申请号：PCT/NL2020/050713
申请日：2020-11-12
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： MAMELI, Alfredo , FAWZY, Ahmed , ROOZEBOOM, Freddy , POODT, Paulus Willibrordus George
IPC分类号： C23C16/04 , C23C16/455 , C23C16/54
摘要： The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non- deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.

7. 发明申请

WO2014123415A1 METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE 审中-公开
标题翻译：在基材上沉积原子层的方法和装置
公开(公告)号：WO2014123415A1
公开(公告)日：2014-08-14
申请号：PCT/NL2014/050071
申请日：2014-02-06
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
发明人： KNAAPEN, Raymond Jacobus Wilhelmus , OLIESLAGERS, Ruud , VAN DEN BERG, Dennis , VAN DEN BOER, Matijs C. , ROOZEBOOM, Freddy
IPC分类号： C23C16/455 , C23C16/458 , H01L21/314 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/45551 , C23C16/45563 , C23C16/458 , C23C16/46 , C23C16/481 , C23C16/545
摘要： Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.
摘要翻译：执行原子层沉积的方法。该方法包括使用包括一种或多种气体供应的沉积头（包括前体气体供应）向衬底供应前体气体。前体气体在用于形成原子层的衬底的表面附近反应。沉积头具有包括气体供应的输出面，其在沉积原子层期间至少部分地面对基板表面。输出面具有限定衬底的移动路径的大致圆形形状。通过在供应前体气体的同时旋转沉积头来使前体气体供应相对于基底移动，用于在一个方向上连续移动的同时沉积原子层堆叠。基板的表面通过气体轴承与输出面保持无接触。

8. 发明申请

WO2013025097A1 METHOD AND SYSTEM FOR FORMING A METALLIC STRUCTURE 审中-公开
标题翻译：形成金属结构的方法和系统
公开(公告)号：WO2013025097A1
公开(公告)日：2013-02-21
申请号：PCT/NL2012/050563
申请日：2012-08-14
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , BULLEMA, Jan Eite , ROOZEBOOM, Freddy , VAN DER DONCK, Jacques Cor Johan , BRESSERS, Petrus Marinus Martinus Cornelus
发明人： BULLEMA, Jan Eite , ROOZEBOOM, Freddy , VAN DER DONCK, Jacques Cor Johan , BRESSERS, Petrus Marinus Martinus Cornelus
IPC分类号： H01L21/288 , H01L21/3063 , H01L21/768 , C25D5/02 , C25F3/14
CPC分类号： H01L21/288 , C23C18/161 , C23C18/1619 , C23C18/1669 , C25D5/026 , C25D5/04 , C25D17/001 , C25D17/008 , C25F3/12 , H01L21/2885 , H01L21/3063 , H01L21/76898
摘要： Method of forming a metallic structure (2) in a micro-machined recess that is provided in a surface of a semiconductor substrate (8). The method comprises positioning a protrusion (10) of an apparatus for depositing the metallic structure at least partly inside the recess, thus partly occupying the recess with the protrusion and defining in the recess a gap (14) along the protrusion. The method comprises driving a deposition fluid (20) through the gap in the recess along the protrusion. The method comprises growing in the gap the metallic structure by depositing metal ions contained by the deposition fluid. The method comprises moving the protrusion and the substrate relative to each other so that the protrusion, while being positioned in the recess, moves relative to the recess in a direction out of the recess, thus giving way for the growing of the metallic structure, and forming the metallic structure in the recess.
摘要翻译：在设置在半导体衬底（8）的表面中的微加工凹部中形成金属结构（2）的方法。该方法包括定位用于至少部分地在凹部内部沉积金属结构的装置的突起（10），从而部分地占据具有突起的凹部并且在凹部中沿着突起限定间隙（14）。该方法包括沿着突出部驱动沉积流体（20）穿过凹部中的间隙。该方法包括通过沉积沉积流体所含的金属离子在间隙中生长金属结构。所述方法包括使所述突起和所述基板相对于彼此移动，使得所述突起在位于所述凹部中的同时相对于所述凹部沿着所述凹部的方向移动，从而允许所述金属结构的生长，并且在凹槽中形成金属结构。

9. 发明公开

EP3822389A1 AREA SELECTIVE ATOMIC LAYER DEPOSTION METHOD AND TOOL 审中-公开
公开(公告)号：EP3822389A1
公开(公告)日：2021-05-19
申请号：EP19208861.5
申请日：2019-11-13
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO
发明人： MAMELI, Alfredo , FAWZY, Ahmed , ROOZEBOOM, Freddy , POODT, Paulus Willibrordus George
IPC分类号： C23C16/04 , C23C16/54 , C23C16/455
摘要： The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a backetching space to increase selectivity of the deposition process.

10. 发明公开

EP4122001A1 A METHOD OF MANUFACTURING A SEMI-CONDUCTING THIN FILM DEVICE 审中-实审
公开(公告)号：EP4122001A1
公开(公告)日：2023-01-25
申请号：EP21714273.6
申请日：2021-03-17
申请人： Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO
发明人： MAMELI, Alfredo , KRONEMEIJER, Auke Jisk , ROOZEBOOM, Freddy
IPC分类号： H01L21/033 , H01L29/40

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