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1. 发明授权

US5260447A Polyhydroxycyclopentane derivatives, their preparation and their therapeutic use 失效
标题翻译：多羟基环戊烷衍生物，其制备及其治疗用途
公开(公告)号：US5260447A
公开(公告)日：1993-11-09
申请号：US835185
申请日：1992-02-13
申请人： Mutsuo Nakajima , Osamu Ando , Kiyoshi Hamano , Shuji Takahashi , Takeshi Kinoshita , Hideyuki Haruyama , Akira Sato , Yasuyuki Takamatsu , Ryuzo Enokita
发明人： Mutsuo Nakajima , Osamu Ando , Kiyoshi Hamano , Shuji Takahashi , Takeshi Kinoshita , Hideyuki Haruyama , Akira Sato , Yasuyuki Takamatsu , Ryuzo Enokita
IPC分类号： C07C215/42 , A61K20060101 , A61K31/13 , C07C20060101 , C07C215/44 , C07D263/52 , C07D413/12 , C12P7/38 , C12P17/14 , C07D261/20 , C07C211/00
CPC分类号： C07D263/52 , C07C215/44 , C07D413/10 , C12P17/14 , C07C2101/06
摘要： 5-Amino-1-(hydroxymethyl)cyclopentane-1,2,3,4-tetraol and 2-amino-4-(hydroxymethyl)-3a,5,6,6a-tetrahydro-4H-cyclopent[d]oxazole-4,5,6-triol, which have the ability to inhibit the activity of sugar hydrolases, especially .beta.-glucosidase and sucrase and can thus be used for the treatment and prophylaxis of tumorous conditions, AIDS, diabetes and obesity, can be prepared by hydrolysis of trehazolin. 2-Amino-4-(hydroxymethyl)-3a,5,6,6a-tetrahydro-4H-cyclopent[d]oxazole-4,5,6-triol can also be prepared by fermentation using newly isolated strains Micromonospora sp. SANK 62390, FERM BP-3521 and Amycolatopsis sp. SANK 60791, FERM BP-3513.
摘要翻译： 5-氨基-1-（羟甲基）环戊烷-1,2,3,4-四醇和2-氨基-4-（羟甲基）-3a，5,6,6a-四氢-4H-环戊二烯并[d]恶唑-4 具有抑制糖水解酶，特别是β-葡糖苷酶和蔗糖酶的活性，因此可用于治疗和预防肿瘤病症，AIDS，糖尿病和肥胖症的能力的5,6-三醇可以通过水解制备的trehazolin。 2-氨基-4-（羟甲基）-3a，5,6,6a-四氢-4H-环戊[d]恶唑-4,5,6-三醇也可以通过使用新分离的小单孢菌属 SANK 62390，FERM BP-3521和Amycolatopsis sp。 SANK 60791，FERM BP-3513。

2. 发明授权

US4804676A Enkephalinase B inhibitors, their preparation, and pharmaceutical compositions containing the same 失效
标题翻译：脑啡肽酶B抑制剂，它们的制剂和含有它们的药物组合物
公开(公告)号：US4804676A
公开(公告)日：1989-02-14
申请号：US782524
申请日：1985-10-01
申请人： Yoshinori Inaoka , Shuji Takahashi , Hidetsune Tamaoki , Ryuzo Enokita
发明人： Yoshinori Inaoka , Shuji Takahashi , Hidetsune Tamaoki , Ryuzo Enokita
IPC分类号： C07G99/00 , A61K35/74 , A61K38/55 , A61P25/04 , A61P43/00 , C07K5/06 , C07K5/078 , C07K7/02 , C07K14/81 , C12P1/02 , C12P21/02 , C12R1/01 , C12R1/465 , C12R1/645 , A61K31/40 , C07D207/09
CPC分类号： C07K5/06165
摘要： Propioxatins A and B, which have the formula: ##STR1## wherein R represents a hydrogen atom or a methyl group, can be prepared by cultivating a suitable strain of Kitasatosporia, e.g. Kitasatosporia sp. SANK 60684 (FERM-P 7581). They can be salified to give pharmaceutically acceptable salts. The compounds are active as enkephalinase B inhibitors and are thus capable of enhancing enkephalin activity in vivo.
摘要翻译：具有式：其中R表示氢原子或甲基的具有下式的具有下式的普鲁马毒素A和B可以通过培养合适的Kitasatosporia菌株，例如，北海孢属 SANK 60684（FERM-P 7581）。它们可以成盐以产生药学上可接受的盐。这些化合物作为脑啡肽酶B抑制剂是有活性的，因此能够在体内增强脑啡肽的活性。

3. 发明授权

US5405762A Culture of alteromonas and process of using the same to produce an antibacterial compound 失效
标题翻译：变异体的培养及其使用方法生产抗菌化合物
公开(公告)号：US5405762A
公开(公告)日：1995-04-11
申请号：US184225
申请日：1994-01-19
申请人： Shuji Takahashi , Hideyuki Shiozawa , Hideyuki Haruyama , Takeshi Kagasaki , Kentaro Kodama , Akira Ishii
发明人： Shuji Takahashi , Hideyuki Shiozawa , Hideyuki Haruyama , Takeshi Kagasaki , Kentaro Kodama , Akira Ishii
IPC分类号： C07D495/04 , C12P17/18 , C12N1/20 , C12P17/16
CPC分类号： C07D495/04 , C12P17/185 , C12R1/01
摘要： The present invention relates to a novel antibacterial compound obtainable from the genus Alteromonas and which shares structural similarity with the pseudomonic acids.
摘要翻译：本发明涉及一种获自阿尔单胞菌属的新型抗菌化合物，其与假单胞菌酸共享结构相似性。

4. 发明授权

US5292892A Anti-bacterial compound and pharmaceutical compositions thereof 失效
标题翻译：抗菌化合物及其药物组合物
公开(公告)号：US5292892A
公开(公告)日：1994-03-08
申请号：US2085
申请日：1993-01-08
申请人： Shuji Takahashi , Hideyuki Shiozawa , Hideyuki Haruyama , Takeshi Kagasaki , Kentaro Kodama , Akira Ishii
发明人： Shuji Takahashi , Hideyuki Shiozawa , Hideyuki Haruyama , Takeshi Kagasaki , Kentaro Kodama , Akira Ishii
IPC分类号： C07D495/04 , C12P17/18 , A61K31/40
CPC分类号： C07D495/04 , C12P17/185 , C12R1/01
摘要： The present invention relates to a novel antibacterial compound obtainable from the genus Alteromonas and which shares structural similarity with the pseudomonic acids.
摘要翻译：本发明涉及一种获自阿尔单胞菌属的新型抗菌化合物，其与假单胞菌酸共享结构相似性。

5. 发明授权

US08628174B2 Piezoelectric element, method of manufacturing the same, and ink jet head 有权
标题翻译：压电元件，其制造方法和喷墨头
公开(公告)号：US08628174B2
公开(公告)日：2014-01-14
申请号：US12717816
申请日：2010-03-04
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： B41J2/045 , H01L41/00 , H02N2/00
CPC分类号： B41J2/1628 , B41J2/161 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , H01L41/0973 , H01L41/316 , H01L41/332
摘要： A piezoelectric element 10 includes a supporting body 12, a lower electrode 16 that is formed over the supporting body, a piezoelectric layer 20 that is formed over the lower electrode, and an upper electrode 24 that is formed over the piezoelectric layer so as to oppose the lower electrode via the piezoelectric layer. A step portion 20A is formed at a peripheral portion of the piezoelectric layer at a side of the lower electrode such that a surface of the piezoelectric layer at the side of the lower electrode is larger than a surface of the piezoelectric layer at a side of the upper electrode.
摘要翻译：压电元件10包括支撑体12，形成在支撑体上的下电极16，形成在下电极上的压电层20和形成在压电层上方的上电极24，下电极通过压电层。台阶部分20A形成在压电层的下电极一侧的周边部分处，使得压电层在下电极侧的表面大于压电层侧面的压电层的表面上电极。

6. 发明申请

US20130098888A1 METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS 审中-公开
标题翻译：用于加热处理的方法，用于生产硅波的方法，硅波和热处理装置
公开(公告)号：US20130098888A1
公开(公告)日：2013-04-25
申请号：US13807243
申请日：2011-07-15
申请人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
发明人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
IPC分类号： H05B1/00
CPC分类号： H05B1/00 , C30B29/06 , C30B33/02 , H01L21/324 , H01L21/67115
摘要： The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.
摘要翻译：本发明是一种对晶片进行热处理的方法，其特征在于，通过在主表面（第一晶片的主表面）由支撑构件支撑，其中通过控制加热源进行热处理的方法是这样一种方式，使得由支撑构件支撑的第一主表面的温度变为1至25 高于与晶片的第一主表面相对的主表面（第二主表面）的温度。结果，提供了一种用于对晶片进行热处理的方法，当对硅晶片进行热处理时，可以可靠地抑制从晶片支撑位置产生的滑移位错的方法。

7. 发明申请

US20120008915A1 VIDEO DATA RECORDING DEVICE, VIDEO DATA PLAYING DEVICE, VIDEO DATA RECORDING METHOD, AND VIDEO DATA PLAYING METHOD 有权
标题翻译：视频数据记录装置，视频数据播放装置，视频数据记录方法和视频数据播放方法
公开(公告)号：US20120008915A1
公开(公告)日：2012-01-12
申请号：US13001554
申请日：2010-03-18
申请人： Shuji Takahashi , Yasuhiro Ueki
发明人： Shuji Takahashi , Yasuhiro Ueki
IPC分类号： H04N5/91 , G06K9/62
CPC分类号： H04N5/91 , G06K9/00248 , G11B27/034 , G11B27/28 , H04N5/232 , H04N5/23219 , H04N5/772 , H04N5/85 , H04N9/8205
摘要： A video data recording device for sufficiently protecting privacy even before a mask target enters into a screen. The video data recording device includes a reference information storage unit in which reference information including predetermined features is recorded; a video data acquisition unit which acquires video data and sequentially outputs the video data to a video buffer; a similarity determining unit which compares newest video data and the reference information, and extracts partial information determined to be similar to the reference information from the newest video data; a relation determining unit which compares video data output to the video buffer before the newest video data, and the partial information determined to be similar, and extracts partial information determined to be related to the partial information determined to be similar; and an imaging recording I/F unit which records the video data and the related information related to the partial information in a recording medium.
摘要翻译：一种视频数据记录装置，即使在掩模目标进入屏幕之前也能充分保护隐私。视频数据记录装置包括参考信息存储单元，其中记录了包括预定特征的参考信息; 视频数据获取单元，其获取视频数据并将视频数据顺序地输出到视频缓冲器; 相似度确定单元，对最新的视频数据和参考信息进行比较，并从最新的视频数据中提取确定为与参考信息相似的部分信息; 关系确定单元，将在最新视频数据之前的视频缓冲器输出的视频数据与确定为相似的部分信息进行比较，并且提取被确定为与被确定为相似的部分信息相关的部分信息; 以及成像记录I / F单元，其将视频数据和与部分信息相关的相关信息记录在记录介质中。

8. 发明授权

US07854494B2 Nozzle plate, method of manufacturing nozzle plate, and image forming apparatus 有权
标题翻译：喷嘴板，喷嘴板的制造方法以及成像装置
公开(公告)号：US07854494B2
公开(公告)日：2010-12-21
申请号：US12023984
申请日：2008-01-31
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： B41J2/14
CPC分类号： B41J2/1433 , B41J2/1606 , B41J2/162 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1645
摘要： The nozzle plate has a nozzle hole formed therethrough, the nozzle hole being defined in the nozzle plate with an inner surface including a first liquid-philic portion, a liquid-phobic portion and a second liquid-philic portion that are arranged in this order from a side near the nozzle mouth, the first and second liquid-philic portions having liquid-philicity, the liquid-phobic portion having liquid-phoblicity.
摘要翻译：喷嘴板具有贯穿其上形成的喷嘴孔，喷嘴孔限定在喷嘴板中，其内表面包括第一液体亲水部分，液体疏液部分和第二液体亲水部分，在喷嘴口附近的一侧，第一和第二液体亲液部分具有液体亲和性，该液体疏液部分具有液体光阑。

9. 发明申请

US20100216260A1 PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD 有权
标题翻译：等离子体蚀刻方法和装置，以及制造液体喷射头的方法
公开(公告)号：US20100216260A1
公开(公告)日：2010-08-26
申请号：US12712132
申请日：2010-02-24
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： H01L21/66 , H01L21/3065 , C23F1/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , H01J37/32091 , H01J37/32963 , H01J2237/334 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step.
摘要翻译：等离子体蚀刻方法包括：蚀刻步骤，在室中的台上放置通过保护膜在待蚀刻材料的表面上形成规定的掩模图案的基板，在腔室中产生等离子体，同时向所述室供应处理气体，并且蚀刻与所述掩模图案中的开口部分相对应的所述材料的一部分; 电压测量步骤，在蚀刻步骤的蚀刻期间，通过与所述材料的表面接触放置的导电构件测量形成有所述掩模图案的一侧上的所述材料的表面处的电压形成掩模图案的一侧; 以及根据在电压测量步骤中获得的测量结果来控制蚀刻步骤中的蚀刻条件的控制步骤。

10. 发明申请

US20060115598A1 Repellency increasing structure and method of producing the same, liquid ejection head and method of producing the same, and stain-resistant film 失效
标题翻译：排斥性增加结构及其制造方法，液体喷射头及其制造方法以及耐污染膜
公开(公告)号：US20060115598A1
公开(公告)日：2006-06-01
申请号：US11290695
申请日：2005-12-01
申请人： Yasuhisa Kaneko , Shuji Takahashi , Yoshinori Hotta , Toshiaki Fukunaga
发明人： Yasuhisa Kaneko , Shuji Takahashi , Yoshinori Hotta , Toshiaki Fukunaga
IPC分类号： G11B5/64 , B05D3/10
CPC分类号： B41J2/1606 , Y10T428/24355
摘要： The repellency increasing structure includes a substrate, if a surface of the substrate is flat, a flat surface of which shows lyophilic property with respect to a liquid having a surface tension lower than that of water and multiple recesses multiple and/or projections that are formed in the surface of the substrate. Inner walls of the recesses and outer walls of the projections are substantially parallel to a thickness direction of the substrate. The structure further includes a repellent layer that covers the recesses and the projections. In the liquid ejection head, a solution ejection surface around multiple through-holes of a ejection substrate corresponds to the surface of the substrate of the repellency increasing structure in which the recesses and/or the projections are formed. In the stain-resistant film, the substrate of the repellency increasing structure is a support film.
摘要翻译：排斥性增加结构包括基材，如果基材的表面是平坦的，其平坦表面相对于表面张力低于水的表面张力的液体显示亲液性，并且多个凹陷形成多个和/或突起在基板的表面。突起的凹部和外壁的内壁基本上平行于基板的厚度方向。该结构还包括覆盖凹部和突起的驱避层。在液体喷射头中，喷射基板的多个通孔周围的溶液喷射面对应于形成凹部和/或突起的排斥性增加结构的基板的表面。在耐污染膜中，斥力增加结构的基材是支持膜。

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