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1. 发明授权

US06653235B2 Fabricating process for forming multi-layered metal bumps by electroless plating 有权
公开(公告)号：US06653235B2
公开(公告)日：2003-11-25
申请号：US09887074
申请日：2001-06-25
申请人： Muh-Wang Liang , Yi-Hsiu Tseng , Pang-Min Chiang
发明人： Muh-Wang Liang , Yi-Hsiu Tseng , Pang-Min Chiang
IPC分类号： H01L2100
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05548 , H01L2224/1147 , H01L2224/13099 , H01L2224/131 , H01L2224/13155 , H01L2224/13644 , H01L2224/13647 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/00014 , H01L2224/05647 , H01L2224/05124 , H01L2224/05147
摘要： The present invention provides a fabricating process for forming multi-layered metal bumps by electroless plating, comprising the steps of: providing an IC chip or a semiconductor substrate on which there are provided a plurality of pads; dispensing a first dielectric layer, exposing the pads, roughing the surface to be redistributed by chemical or physical approaches, activating the surface in order to follow-up electroless plating deposition advantageously, and dispensing a second dielectric layer so as to define a redistribution path; depositing a conductive film on the redistribution path by electroless plating, in which the conductive film allows the positions of the pads to be changed so as to be connected to the external circuit; forming a photoresist pattern, exposing a plurality of pre-determined positions on the conductive film so as to redistribute the positions for the metal bumps formed later; performing activation on the pre-determined positions so as to generate an activator; forming initial metal bumps of a pre-determined thickness on the pads by electroless plating; removing the photoresist pattern, completely exposing the metal bumps; dispensing a third dielectric layer, having a thickness less than the height of the metal bumps and a window more than the size of the metal bumps, so as to expose the metal bumps; and forming a peripheral metal layer covering the periphery of the metal bumps, in which the conductivity and the RF characteristics of the peripheral metal layer are better than those of the metal bumps so as to be electrically connected to the conductive film.

2. 发明授权

US06803329B2 Method for low temperature liquid-phase deposition and method for cleaning liquid-phase deposition apparatus 失效
标题翻译：低温液相沉积方法及清洗液相沉积装置的方法
公开(公告)号：US06803329B2
公开(公告)日：2004-10-12
申请号：US10342245
申请日：2003-01-15
申请人： Edward Y. Chang , Muh-Wang Liang , Shih-Ming Chiang , Chih-Yuan Tseng , Pang-Min Chiang
发明人： Edward Y. Chang , Muh-Wang Liang , Shih-Ming Chiang , Chih-Yuan Tseng , Pang-Min Chiang
IPC分类号： H01L2131
CPC分类号： H01L21/02282 , H01L21/316 , H01L23/3192 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A method for low temperature liquid-phase deposition and a method for cleaning a liquid-phase deposition apparatus are disclosed. The method for low temperature liquid-phase deposition is employed so as to form a low-temperature grown film or a film with excellent step-coverage on the surface of a semiconductor device having independent circuit functions. The method for cleaning liquid-phase deposition apparatus is characterized in that a loop used exclusively for cleaning is employed so as to prevent SiO2 powders from remaining in the loop.
摘要翻译：公开了低温液相沉积的方法和清洗液相沉积设备的方法。采用低温液相沉积的方法，以便在具有独立电路功能的半导体器件的表面上形成低温生长膜或具有优异的阶梯覆盖的膜。清洗液相沉积装置的方法的特征在于，采用专门用于清洗的环，以防止SiO 2粉末残留在回路中。

3. 发明授权

US06653245B2 Method for liquid phase deposition 失效
标题翻译：液相沉积方法
公开(公告)号：US06653245B2
公开(公告)日：2003-11-25
申请号：US09874108
申请日：2001-06-06
申请人： Muh-Wang Liang , Pang-Min Chiang , Chen Max , Jen-Rong Huang , Ching-Fa Yeh
发明人： Muh-Wang Liang , Pang-Min Chiang , Chen Max , Jen-Rong Huang , Ching-Fa Yeh
IPC分类号： H01L2131
CPC分类号： H01L21/67086 , H01L21/316 , Y10T137/4643 , Y10T137/4891 , Y10T137/5386 , Y10T137/5474 , Y10T137/8593 , Y10T307/779
摘要： A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring until saturation occurs, filtering out unnecessary solid-state particles, and providing saturated and filtered liquid into an over-saturation reaction trough of a steady-flow over-saturation loop reaction system and stopping the saturated and filtered liquid when the over-saturation reaction trough is filled and the saturated and filtered liquid over-flows into a liquid level control trough to a pre-determined level. The method also includes the steps of providing a substrate in the over-saturation reaction trough, providing reactants from at least two supply devices into the over-saturation reaction trough, and depositing a thin film onto the substrate when the saturated liquid becomes over-saturated.
摘要翻译：一种用于液相沉积的方法，包括以下步骤：将饱和反应体系的至少两个供应装置的至少两种原料提供到混合物槽中，并搅拌直到饱和发生，过滤不需要的固态颗粒，并提供饱和和过滤液体进入稳流过饱和环路反应系统的过饱和反应槽，当过饱和反应槽填满时停止饱和和过滤的液体，饱和和过滤的液体过量流入液位控制低谷达到预定水平。该方法还包括以下步骤：在过饱和反应槽中提供衬底，将反应物从至少两个供应装置提供到过饱和反应槽中，并且当饱和液体变得过度饱和时，将薄膜沉积到衬底上。

4. 发明授权

US08435803B2 Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition 有权
标题翻译：沉积微晶硅的方法和等离子体增强沉积监测装置
公开(公告)号：US08435803B2
公开(公告)日：2013-05-07
申请号：US12758698
申请日：2010-04-12
申请人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
发明人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
IPC分类号： H01L21/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译：公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Halpha的闭环等离子体增强沉积工艺，并调制等离子体增强沉积过程的工艺参数，物质浓度稳定化，其控制SiH *和Halpha在目标值的允许范围内的强度变化，以提高成膜速率。

5. 发明授权

US06669185B2 Wafer loading system positioning method and device 有权
公开(公告)号：US06669185B2
公开(公告)日：2003-12-30
申请号：US09736664
申请日：2000-12-08
申请人： Wu-Lang Lin , Kuan-Chou Chen , Ping-Yu Hu , Muh-Wang Liang , Kuei-Jung Chen , Tzong-Ming Wu
发明人： Wu-Lang Lin , Kuan-Chou Chen , Ping-Yu Hu , Muh-Wang Liang , Kuei-Jung Chen , Tzong-Ming Wu
IPC分类号： B65G6534
CPC分类号： H01L21/67775 , Y10S269/903 , Y10S414/137
摘要： A wafer loading system positioning method and device, comprising a loading system, having a base and a rear plate for docking on a positioning frame of a production equipment. The main characteristic thereof is that the loading system in an upper part of the rear plate has a holding seat and the positioning frame in an upper part of a front side has an upward extending positioning element. Two eccentric cams on the holding seat and the positioning element allow to adjust a relative position of the holding seat with respect to the positioning element. A lifting mechanism enables raising of the loading system for lifting said holding seat above said positioning element, so as to enable said holding seat to engage with said positioning element.

6. 发明申请

US20120111269A1 VIEW PORT DEVICE FOR PLASMA PROCESS AND PROCESS OBSERVATION DEVICE OF PLASMA APPARATUS 审中-公开
标题翻译：等离子体处理的观察装置和等离子体装置的方法观察装置
公开(公告)号：US20120111269A1
公开(公告)日：2012-05-10
申请号：US13009526
申请日：2011-01-19
申请人： Chen-Chung DU , Muh-Wang Liang , Guan-Yu Lin , Ta-Chin Wei
发明人： Chen-Chung DU , Muh-Wang Liang , Guan-Yu Lin , Ta-Chin Wei
IPC分类号： B05C11/00
CPC分类号： C23C16/50 , H01J37/32798 , H01J37/32935
摘要： A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.
摘要翻译：提供了一种用于等离子体处理的视口装置和等离子体装置的处理观察装置。用于等离子体处理的视口装置包括第一基板部分，第二基板部分和连接部分。第一基板部分具有第一通孔。第二基板部分具有第二通孔和第二扩散空间。第二扩散空间的横截面积大于第二通孔的横截面面积。连接部分设置在第一基板部分和第二基板部分之间。

7. 发明申请

US20100123381A1 CATHODE DISCHARGE APPARATUS 有权
标题翻译：阴极放电装置
公开(公告)号：US20100123381A1
公开(公告)日：2010-05-20
申请号：US12411797
申请日：2009-03-26
申请人： FU-CHING TUNG , Tean-Mu Shen , Jung-Chen Ho , Pei-Shan Wu , Chia-Ming Chen , Kuan-Chou Chen , Jung-Chen Chien , Muh-Wang Liang
发明人： FU-CHING TUNG , Tean-Mu Shen , Jung-Chen Ho , Pei-Shan Wu , Chia-Ming Chen , Kuan-Chou Chen , Jung-Chen Chien , Muh-Wang Liang
IPC分类号： H01J17/26
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.
摘要翻译：提供阴极放电装置。阴极放电装置包括阳极，阴极和多个阴极室。阴极位于阳极的内部，其中阴极具有多个流动通道和至少一个流动通道孔，并且多个流动通道通过流动通道孔相互连接。多个阴极室位于阴极内，其中每个阴极室具有腔室出口和与至少一个流动通道连接的室入口。

8. 发明授权

US06997664B1 Apparatus for loading/unloading wafers to and from semiconductor fabrication equipment 有权
标题翻译：用于从半导体制造设备加载/卸载晶片的装置
公开(公告)号：US06997664B1
公开(公告)日：2006-02-14
申请号：US09619388
申请日：2000-07-19
申请人： Muh-Wang Liang , Chun-Kai Huang , Jiann-Cherng Chen , Tzong-Ming Wu , Ping-Yu Hu , Kuan-Chou Chen
发明人： Muh-Wang Liang , Chun-Kai Huang , Jiann-Cherng Chen , Tzong-Ming Wu , Ping-Yu Hu , Kuan-Chou Chen
IPC分类号： B65G49/07
CPC分类号： H01L21/67775 , Y10S414/14
摘要： The present invention proposes an apparatus for loading and unloading wafers to and from the semiconductor fabrication equipment. The present invention uses two U-shaped port plate supporters of high rigidity to respectively join with drive devices such as lead screws, shaft bearings, and a lead device, and then join with components such as a port plate, a port door, and a base. The assembly is driven by a motor via timing pulleys, timing belts, idle wheels, a pair of lead screws, shaft bearings, and a lead device. An encoder is matched for feedback control. Thereby, accurate positioning of the main mechanism of the wafer pod responsible for upward and downward movement can be achieved so as to increase the accuracy and reliability of positioning transfer of wafers. Secondarily, the contamination of particles resulted from the motion of the main mechanism can be reduced by using an intake filtering system. Because the present invention adopts a modular design, the drive source of each unit is isolated and the circuit of each unit is hidden so that the whole structure is most compact and the assembling/disassembling and maintenance are easier.
摘要翻译：本发明提出了一种用于将晶片装载和从半导体制造设备卸载的装置。本发明使用两个具有高刚度的U形端口板支撑件分别与诸如导螺杆，轴轴承和引线装置的驱动装置接合，然后与诸如端口板，端口门和基础。组件由电机通过定时滑轮，同步皮带，惰轮，一对导螺杆，轴轴承和引导装置驱动。编码器匹配反馈控制。因此，可以实现负责向上和向下移动的晶片盒的主机构的精确定位，从而提高晶片定位传送的准确性和可靠性。其次，通过使用进气过滤系统可以减少由主机构的运动引起的颗粒污染。因为本发明采用模块化设计，每个单元的驱动源是隔离的，每个单元的电路都是隐藏的，使得整个结构最紧凑，组装/拆卸和维护更容易。

9. 发明授权

US06382945B1 Resin plunging apparatus for molding resin to seal an electronic device 有权
标题翻译：用于模塑树脂以密封电子装置的树脂插入装置
公开(公告)号：US06382945B1
公开(公告)日：2002-05-07
申请号：US09321543
申请日：1999-05-28
申请人： Li-Wei Chen , Muh-Wang Liang , Sheng-Lang Lee , Kuang-Yuan Hung
发明人： Li-Wei Chen , Muh-Wang Liang , Sheng-Lang Lee , Kuang-Yuan Hung
IPC分类号： B29C4502
CPC分类号： B29C45/021 , Y10S425/228
摘要： A resin plunging apparatus for molding resin to seal an electronic device, in which a ball screw is rotated to move a movable base plate and two load elements at the movable base plate, enabling a plunger holder which is supported on the load elements to be moved with the movable base plate along guide bars, so that plungers which are securely mounted on the plunger holder are positively smoothly forced into cavities in upper and lower molds to plunge resin tablets.
摘要翻译：一种用于模制树脂以密封电子装置的树脂插入装置，其中滚珠丝杠被旋转以使可移动基板和两个负载元件移动在可移动基板处，使得支撑在负载元件上的柱塞保持器能够移动使可动基板沿着导杆移动，使得牢固地安装在柱塞保持器上的柱塞能够被积极平滑地压入上模具和下模具中的空腔中以插入树脂片。

10. 发明申请

US20110136269A1 METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND MONITOR DEVICE OF PLASMA ENHANCED DEPOSITION 有权
标题翻译：沉积微晶硅的方法和等离子体增强沉积的监测装置
公开(公告)号：US20110136269A1
公开(公告)日：2011-06-09
申请号：US12758698
申请日：2010-04-12
申请人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
发明人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译：公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Hα的闭环等离子体增强沉积过程，并调制等离子体增强沉积过程的工艺参数，从而导致物质浓度稳定化，其控制在目标值的允许范围内的SiH *和Hα的强度变化，以提高成膜速率。

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