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1. 发明授权

US6001748A Single crystal of nitride and process for preparing the same 失效
标题翻译：单晶氮化物及其制备方法
公开(公告)号：US6001748A
公开(公告)日：1999-12-14
申请号：US868971
申请日：1997-06-04
申请人： Motoyuki Tanaka , Kouichi Sogabe
发明人： Motoyuki Tanaka , Kouichi Sogabe
IPC分类号： C30B23/00 , C30B23/02 , C30B29/38 , H01L21/31
CPC分类号： C30B23/02 , C30B29/38
摘要： A single crystal of a nitride having a length of not less than 10 mm, a width of not less than 10 mm and a thickness of not less than 300 .mu.m, or having a length of not less than 20 mm and a diameter of not less than 10 .mu.m. In the production of the single crystal, either a mixed powder composed of a nitride powder and an oxide powder or an amorphous nitride powder is provided as a source material powder, the source material powder is heated in a nitrogen atmosphere or in a nitrogen atmosphere containing hydrogen and/or carbon at a temperature below the sublimation temperature or melting temperature of the nitride to decompose and vaporize the nitride powder, and the decomposed and vaporized component is subjected to crystal growth from the vapor phase on a substrate. The nitride single crystal is useful as a bulk material for heat sinks, electric and electronic components, such as semiconductors, optical components, and components of electric equipment and office automation equipment.
摘要翻译：长度不小于10mm，宽度不小于10mm，厚度不小于300μm，长度不小于20mm，直径不大于90mm的氮化物单晶小于10亩。在单晶的制造中，提供由氮化物粉末和氧化物粉末组成的混合粉末或非晶氮化物粉末作为源材料粉末，将源材料粉末在氮气氛或氮气氛中加热，氢和/或碳，在低于氮化物的升华温度或熔融温度的温度下分解和蒸发氮化物粉末，并且将分解和汽化的组分从衬底上的气相中进行晶体生长。氮化物单晶可用作散热器，电子和电子部件如半导体，光学部件以及电气设备和办公自动化设备的部件的散装材料。

2. 发明授权

US5909036A Group III-V nitride semiconductor device 失效
标题翻译： III-V族氮化物半导体器件
公开(公告)号：US5909036A
公开(公告)日：1999-06-01
申请号：US881126
申请日：1997-06-24
申请人： Motoyuki Tanaka , Kouichi Sogabe
发明人： Motoyuki Tanaka , Kouichi Sogabe
IPC分类号： H01L33/12 , H01L33/16 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01S5/32341 , H01L33/0075
摘要： A semiconductor device comprising single crystal films consisting of at least one III-V nitride selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and single-crystalline alloys of these nitrides, the single crystal films being provided on a single crystal substrate of aluminum nitride either directly or through a low-temperature growth buffer layer of at least one III-V nitride. This semiconductor device is useful as a short-wavelength light emitting device capable of conducting continuous oscillation or a diode which is operated at a high temperature. The AlN single crystal substrate is matched in lattice constant and coefficient of thermal expansion with the single crystal film of a III-V nitride and the single crystal films is grown with good crystallinity on the substrate.
摘要翻译：一种包括由选自氮化镓，氮化铝，氮化硼，氮化铟和这些氮化物的单晶合金中的至少一种III-V族氮化物构成的单晶膜的半导体器件，单晶膜设置在直接或通过至少一种III-V族氮化物的低温生长缓冲层的氮化铝单晶衬底。该半导体器件可用作能够进行连续振荡的短波长发光器件或在高温下工作的二极管。 AlN单晶衬底的晶格常数和热膨胀系数与III-V族氮化物的单晶膜匹配，并且在衬底上生长具有良好结晶度的单晶膜。

3. 发明授权

US06337146B1 Hydrogen-occluding layered material 失效
标题翻译：储氢层压材料
公开(公告)号：US06337146B1
公开(公告)日：2002-01-08
申请号：US09762426
申请日：2001-02-06
申请人： Kouichi Sogabe , Shousaku Yamanaka , Yoshinobu Takeda , Nozomu Kawabe , Hideo Itozaki , Akira Nakayama , Takashi Uemura
发明人： Kouichi Sogabe , Shousaku Yamanaka , Yoshinobu Takeda , Nozomu Kawabe , Hideo Itozaki , Akira Nakayama , Takashi Uemura
IPC分类号： B32B1500
CPC分类号： H01M4/366 , B01J20/0207 , B01J20/0218 , B01J20/0225 , B01J20/0229 , B01J20/04 , B01J2220/42 , B32B15/01 , C01B3/0078 , C01B3/0084 , C23C14/14 , H01M4/242 , H01M4/383 , H01M8/065 , Y02E60/327 , Y10T428/12632 , Y10T428/12729 , Y10T428/12778 , Y10T428/12826 , Y10T428/12931 , Y10T428/12951
摘要： A hydrogen storage laminated material can be obtained which is capable of achieving reduction in weight as well as being mass-produced industrially while assuring excellent hydrogen storage capability. The hydrogen storage laminated material (10) has a laminated structure of a first layer (6a) and a second layer (7a), wherein the first layer is formed from an alloy or compound including an element of a group 2A or 3A or an element of at least one of the groups 2A and 3A, and at least partially includes a bcc structure, and the second layer is formed from an alloy or compound including an element of one of groups 6A, 7A and 8A or an element of at least one of the groups 6A, 7A and 8A.
摘要翻译：可以获得能够实现重量减轻以及在工业上批量生产同时确保优异的储氢能力的储氢层压材料。储氢层压材料（10）具有第一层（6a）和第二层（7a）的层压结构，其中第一层由包含2A或3A族元素或元素的元素的合金或化合物形成的组2A和3A中的至少一个，并且至少部分地包括bcc结构，并且第二层由包含6A，7A和8A族之一的元素的合金或化合物或至少一种元素的组6A，7A和8A。

4. 发明授权

US5306679A Heat conductive colored aluminum nitride sintered body 失效
标题翻译：导热色氮化铝烧结体
公开(公告)号：US5306679A
公开(公告)日：1994-04-26
申请号：US24820
申请日：1993-03-01
申请人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
发明人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
IPC分类号： C04B35/581 , H01L21/48 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Such a sintered body has a heat conductivity of at least 100 W/m.multidot.K. and not more than 270 W/m.multidot.K. at room temperature.
摘要翻译：导热氮化铝烧结体含有100重量份的氮化铝，至少0.005重量份，不超过0.5重量份的碳，至少0.01重量份，不超过15重量份的稀有金属以稀土元素的单质为基准的至少0.01重量份至少15重量份的选自包含属于IVB族，VB族的元素的化合物的族中的至少一种元素和元素周期表的VIB。这种烧结体的导热率至少为100W / m×K。不超过270 W / m * K。在室温下。

5. 发明授权

US06566990B2 Electromagnetic actuator and valve-open-close mechanism 失效
公开(公告)号：US06566990B2
公开(公告)日：2003-05-20
申请号：US09729348
申请日：2000-12-05
申请人： Hitoshi Oyama , Takao Nishioka , Kenji Matsunuma , Kouichi Sogabe
发明人： Hitoshi Oyama , Takao Nishioka , Kenji Matsunuma , Kouichi Sogabe
IPC分类号： H01F708
CPC分类号： F01L9/04 , F01L1/462 , F01L3/02 , F01L3/10
摘要： To lighten the weight of an electromagnetic actuator and a valve-open-close mechanism by forming the stems from a lighter material than conventional. A pair of electromagnets formed of stators and coils are opposed to each other with a gap therebetween. An armature is disposed in the gap so as to be reciprocable between one electromagnet and the other electromagnet by the electromagnets. A first stem for transmitting the movement of the armature from one electromagnet toward the other electromagnet to a valve of the internal combustion engine is inserted in a guide hole formed in the stator of one electromagnet. The first stem is formed of a lighter material than the armature to lighten the weight of the electromagnetic actuator and a valve-open-close mechanism of an internal combustion engine.

6. 发明授权

US5482905A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5482905A
公开(公告)日：1996-01-09
申请号：US178642
申请日：1994-01-05
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1.000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

7. 发明授权

US06329076B1 Hydrogen storage material and manufacturing method of the same 失效
标题翻译：储氢材料及其制造方法相同
公开(公告)号：US06329076B1
公开(公告)日：2001-12-11
申请号：US09762980
申请日：2001-02-14
申请人： Nozomu Kawabe , Kouichi Sogabe , Shousaku Yamanaka , Yoshinobu Takeda , Takashi Uemura
发明人： Nozomu Kawabe , Kouichi Sogabe , Shousaku Yamanaka , Yoshinobu Takeda , Takashi Uemura
IPC分类号： B32B1500
CPC分类号： H01M8/065 , B01J20/02 , C01B3/0031 , C01B3/0047 , C01B3/0078 , C01B3/0084 , H01M4/383 , Y02E60/327 , Y10S420/90 , Y10S428/926 , Y10S428/94 , Y10T428/12729 , Y10T428/12778 , Y10T428/12806 , Y10T428/12861
摘要： A hydrogen storage material (1) having excellent hydrogen storage capability and having such a low hydrogen desorption temperature as not to significantly hinder the use thereof, and also capable of being mass-produced, and a manufacturing method of the same can be obtained. The hydrogen storage material has a layered deformation structure including plastic deformation, and one layer (2) of the layered deformation structure is formed from an alloy or compound including an element of groups 2A, 3A and 4A or an element of at least one of the groups 2A, 3A and 4A, and another layer (3) being in contact with the one layer is formed from an alloy or compound including an element of groups 6A, 7A and 8A or an element of at least one of the groups 6A, 7A and 8A.
摘要翻译：具有优异的储氢能力并且具有这样的低氢解吸温度不会显着阻碍其使用并且也可以批量生产的储氢材料（1），并且可以获得其制造方法。储氢材料具有包括塑性变形的层状变形结构，层叠变形结构的一层（2）由包含2A，3A和4A族的元素的合金或化合物或至少一种组2A，3A和4A以及与该层接触的另一层（3）由包含6A，7A和8A族的元素的合金或化合物或6A，7A族中的至少一种的元素形成和8A。

8. 发明授权

US5395694A Aluminum nitride powder having surface layer containing oxynitride 失效
标题翻译：具有包含氮氧化物的表面层的氮化铝粉末
公开(公告)号：US5395694A
公开(公告)日：1995-03-07
申请号：US117433
申请日：1993-09-07
申请人： Kouichi Sogabe , Takahiro Matsuura , Seiji Nakahata , Akira Yamakawa
发明人： Kouichi Sogabe , Takahiro Matsuura , Seiji Nakahata , Akira Yamakawa
IPC分类号： C01B21/072 , C04B35/581 , B32B15/04
CPC分类号： C04B35/581 , C01B21/072 , C01B21/0728 , C01P2002/50 , C01P2002/82 , C01P2004/80 , C01P2006/32 , Y10T428/265 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： An aluminum nitride powder having a surface layer containing an oxynitride characterized in that the surface layer of the aluminum nitride particle contains an aluminum oxynitride which has an oxygen content of 5 to 75 mol % in terms of Al.sub.2 O.sub.3 /(Al.sub.2 O.sub.3 +AlN). The surface layer of the aluminum nitride powder may contain, besides the aluminum oxynitride, at least one other oxynitride selected from among oxynitrides of Mg, Ca, Ba, Ti, V, Cr, Co, Ni, Cu, Ga, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Li, B, Si, Y, Sc and rare metal elements and the aluminum oxynitride and at least one other oxynitride have a total oxygen content in the range of 10 to 75 mol % in terms of (3.times.oxygen amount)/(3.times.oxygen amount+nitrogen amount). The alumina nitride powder can easily be converted into a sintered body having excellent sinterability and favorable characteristics, since the above surface layer reduces the penetration of oxygen from the surface layer into the crystal grains and prevents the formation of microcracks layer.
摘要翻译：一种具有包含氧氮化物的表面层的氮化铝粉末，其特征在于，氮化铝颗粒的表面层含有以Al 2 O 3 /（Al 2 O 3 + AlN）换算的氧含量为5〜75摩尔％的氮氧化铝。除了氮氧化铝之外，氮化铝粉末的表面层可以含有选自Mg，Ca，Ba，Ti，V，Cr，Co，Ni，Cu，Ga，Ge，Zr等的氮氧化物中的至少一种氮氧化物， Nb，Mo，Ru，Hf，Ta，W，Li，B，Si，Y，Sc和稀有金属元素和氮氧化铝和至少一种其他氧氮化物的总氧含量在10〜75摩尔％的范围内（3氧气量）/（3氧气量+氮量）。氮化铝粉末可以容易地转化为具有优异的可烧结性和良好特性的烧结体，因为上述表面层使氧从表面层渗透到晶粒中并防止形成微裂纹层。

9. 发明授权

US5147832A Thermal conductive colored aluminum nitride sintered body and method of preparing the same 失效
标题翻译：热传导性有色氮化铝烧结体及其制备方法
公开(公告)号：US5147832A
公开(公告)日：1992-09-15
申请号：US738461
申请日：1991-07-31
申请人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
发明人： Kouhei Shimoda , Takao Maeda , Kouichi Sogabe , Masaya Miyake
IPC分类号： C04B35/581 , H01L23/08 , H01L23/15
CPC分类号： C04B35/581
摘要： An AlN sintered body which has a color within the range of gray to black and a thermal conductivity within the range of 100 to 270 W/m.multidot.K at room temperature. Such a body is useful as an electronic material and a method of preparing the same. The AlN sintered body contains 100 parts by weight of AlN, 0.005 to 0.5 parts by weight of carbon, not more than 1 part by weight of a boron compound in terms of the simple substance of boron, 0.01 to 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of the rare earth element, and 0.01 to 15 parts by weight of a compound containing an element belonging to the group IVB of the periodic table in terms of the simple substance of the element. This AlN sintered body is obtained by shaping a mixture of the above components into a prescribed configuration and thereafter firing the as-formed compact in a non-oxidizing atmosphere containing at least 10 percent by volume of nitrogen, at a temperature of 1500.degree. to 2100.degree. C.

10. 发明授权

US5529962A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5529962A
公开(公告)日：1996-06-25
申请号：US406242
申请日：1995-03-14
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1,000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

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