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1. 发明授权

US4532150A Method for providing a coating layer of silicon carbide on the surface of a substrate 失效
标题翻译：在基材表面上提供碳化硅涂层的方法
公开(公告)号：US4532150A
公开(公告)日：1985-07-30
申请号：US564293
申请日：1983-12-22
申请人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Susumu Ueno
发明人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Susumu Ueno
IPC分类号： C04B41/87 , C03C17/22 , C08J7/04 , C23C16/32 , H01L21/314 , C23C13/04
CPC分类号： C23C16/325 , H01L21/314
摘要： The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula Si.sub.x C.sub.1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.
摘要翻译：本发明提供了一种用于提供各种基底制品的表面的新方法，例如，蓝宝石，石英，氧化铝，金属，玻璃，塑料等，其中x为正数为0.2至0.9，其中X为正数为0.2至0.9的非晶碳化硅的分子式为SixC1-x，通过使基材的表面在没有卤素或氧原子直接键合到硅原子的有机硅化合物的气体气氛中产生的等离子体气氛，例如六甲基乙硅烷，任选地与烃化合物的蒸汽或气体混合，例如甲烷，苯等。

2. 发明授权

US4676966A Method for the preparation of a fine powder of silicon carbide 失效
标题翻译：制备碳化硅细粉的方法
公开(公告)号：US4676966A
公开(公告)日：1987-06-30
申请号：US706238
申请日：1985-02-27
申请人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
发明人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , C01P2002/72 , C01P2002/82 , C01P2004/62 , C01P2006/60
摘要： The invention provides a novel method for the preparation of a finely divided powder of silicon carbide as a promising material for sintered ceramic products of silicon carbide. The method comprises vapor-phase pyrolysis of a vaporizable organosilicon compound having, in a molecule, at least two, e.g. 2, 3 or 4, silicon atoms and at least one hydrogen atom directly bonded to the silicon atom but having no oxygen or halogen atom directly bonded to the silicon atom at a temperature of 750.degree. C. or higher.
摘要翻译：本发明提供了一种制备碳化硅细碎粉末作为碳化硅烧结陶瓷产品有希望的材料的新方法。该方法包括在一分子中具有至少两个例如至少两个的可汽化的有机硅化合物的气相热解。 2,3或4，硅原子和至少一个氢原子直接键合到硅原子上，但是在750℃或更高的温度下没有直接与硅原子键合的氧或卤素原子。

3. 发明授权

US4762810A Method for the preparation of a sintered body of silicon carbide 失效
标题翻译：制备碳化硅烧结体的方法
公开(公告)号：US4762810A
公开(公告)日：1988-08-09
申请号：US17818
申请日：1987-02-24
申请人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
发明人： Morinobu Endo , Minoru Takamizawa , Tatsuhiko Hongu , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki
IPC分类号： C04B35/565 , C04B35/571 , C04B35/56
CPC分类号： C04B35/571
摘要： Sintered bodies of silicon carbide having remarkably increased volume resistivity and thermal conductivity can be obtained by heating a green body shaped of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid at 1800.degree. to 2200.degree. C. in the presence of or in the vicinity of a shaped body of a powdery mixture of a fine silicon carbide powder admixed with boron nitride in the same furnace. The improvements in the volume resistivity and thermal conductivity of the sintered body are particularly remarkable when the fine silicon carbide powder is a pyrolysis product of a methyl hydrogen silane compound such as tetramethyl disilane.
摘要翻译：可以通过加热与硼或硼化合物混合的细小碳化硅粉末的生坯体，例如通过加热形成具有显着增加的体积电阻率和导热性的碳化硅的烧结体。碳化硼，硼化钛和氧化硼作为烧结助剂，在1800-2200℃下，在与其相同的氮化硼混合的细碳化硅粉末的粉末混合物的成形体存在下或其附近炉。当细碳化硅粉末是甲基氢硅烷化合物如四甲基乙硅烷的热解产物时，烧结体的体积电阻率和热导率的改善是特别显着的。

4. 发明授权

US4596741A Carbon fibers having improved surface properties and a method for the preparation thereof 失效
标题翻译：具有改善的表面性质的碳纤维及其制备方法
公开(公告)号：US4596741A
公开(公告)日：1986-06-24
申请号：US558845
申请日：1983-12-06
申请人： Morinobu Endou , Susumu Ueno , Tatsuhiko Hongu , Minoru Takamizawa
发明人： Morinobu Endou , Susumu Ueno , Tatsuhiko Hongu , Minoru Takamizawa
IPC分类号： D06M10/00 , C04B41/45 , D01F11/12 , D06M11/00 , D06M11/77 , D06M101/00 , D06M101/40 , B32B9/00 , B05D3/06 , D02G3/00
CPC分类号： C04B41/009 , C04B41/4584 , D01F11/126 , Y10T428/2918 , Y10T428/292 , Y10T428/2933 , Y10T428/30
摘要： The invention provides carbon fibers coated on the surface with a layer of an amorphous silicon carbide of the composition Si.sub.x C.sub.y, x and y each being a positive number with the proviso that the ratio y/x is in the range from 0.5 to 2.5, formed by the exposure of the carbon fibers to low temperature plasma generated in an atmosphere containing an organosilicon compound having no oxygen or chlorine atom directly bonded to the silicon atom in the molecule. The carbon fibers are imparted with greatly increased resistance against air oxidation at high temperatures as well as remarkably improved affinity or wettability with plastics and molten metals along with very low reactivity with molten metals so that the carbon fibers are useful as a reinforcing material in the composite materials of carbon fiber-reinforced plastics and metals.
摘要翻译：本发明提供涂覆在表面上的碳纤维，其中组成为SixCy，x和y的非晶碳化硅层为正数，条件是y / x的比值在0.5至2.5的范围内，由在含有直接与分子中的硅原子键合的氧或氯原子的有机硅化合物的气氛中，碳纤维暴露于低温等离子体中。赋予碳纤维在高温下具有大大提高的抗空气氧化性，并且与塑料和熔融金属显着提高亲和性或润湿性，同时与熔融金属具有非常低的反应性，使得碳纤维可用作复合材料中的增强材料碳纤维增强塑料和金属材料。

5. 发明授权

US4560589A Method for providing a coating layer of silicon carbide on substrate surface 失效
标题翻译：在基板表面上提供碳化硅涂层的方法
公开(公告)号：US4560589A
公开(公告)日：1985-12-24
申请号：US533649
申请日：1983-09-19
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
IPC分类号： C04B41/50 , C04B41/87 , C23C16/32 , D01F11/12 , D06M11/00
CPC分类号： C04B41/009 , C04B41/5059 , C04B41/87 , C23C16/325 , D01F11/126 , Y10S438/931
摘要： The invention provides a method for providing a highly protective coating layer of silicon carbide on to the surface of a substrate. The method comprises pyrolyzing the vapor of an organosilicon compound having at least one hydrogen atom directly bonded to the silicon atom in a molecule but having no halogen or oxygen atom directly bonded to the silicon atom at a temperature of 700.degree. to 1400.degree. C. in contact with the substrate surface to deposit silicon carbide thereon. In particular, the method is useful to form a sheath-and-core structure composed of the core of carbon filament and the coating layer of silicon carbide so that the carbon fibers are imparted with greatly improved resistance against oxidation and chemicals including molten metals when the carbon fibers are used as a reinforcing material of a fiber-reinforced metal composite as well as with improved affinity with molten resins and metals which is also an advantageous property as a reinforcing material for such matrix materials.
摘要翻译：本发明提供了一种在基材表面上提供碳化硅高保护性涂层的方法。该方法包括将分子中具有至少一个与硅原子键合的至少一个氢原子的有机硅化合物的蒸气热分解，但在700℃至1400℃的温度下直接与硅原子键合的卤原子或氧原子，与基底表面接触以在其上沉积碳化硅。特别地，该方法可用于形成由碳丝芯和碳化硅的涂层组成的皮 - 芯结构，从而使得碳纤维在氧化时具有极大的改善的抗性和包括熔融金属在内的化学物质碳纤维用作纤维增强金属复合材料的增强材料，并且与熔融树脂和金属具有改进的亲和性，这也是作为这种基体材料的增强材料的有利特性。

6. 发明授权

US4492681A Method for the preparation of silicon carbide fibers 失效
标题翻译：碳化硅纤维的制备方法
公开(公告)号：US4492681A
公开(公告)日：1985-01-08
申请号：US505250
申请日：1983-06-17
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi
IPC分类号： C01B31/36 , C04B35/571 , C30B25/00 , D01F9/10
CPC分类号： D01F9/10 , C04B35/571 , C30B25/005 , C30B29/36
摘要： The invention provides a novel method for the preparation of silicon carbide fibers capable of being performed at a relatively low temperature and giving fibers of relatively large lengths by the vapor-phase pyrolysis of an organosilicon compound on a substrate. The method comprises contacting an organosilicon compound, which should have no halogen and oxygen atoms directly bonded to the silicon atoms and have preferably at least one hydrogen atom directly bonded to the silicon atom in a molecule, with a finely divided powder of a metal or a compound of a metal, such as copper, silver, vanadium, niobium, tantalum, iron, cobalt, nickel, palladium and platinum, at a temperature of 700.degree. to 1450.degree. C. so that the powder serves simultaneously as a catalyst and nucleus for the growth of the silicon carbide fibers thereon formed by the pyrolysis of the organosilicon compound. When the organosilicon compound is deficient of the carbon content relative to the silicon so that free silicon may be formed by the pyrolysis, admixing of a hydrocarbon to the feed of the organosilicon compound can solve the problem.
摘要翻译：本发明提供了一种制备能够在较低温度下进行的碳化硅纤维的新方法，并且通过基底上的有机硅化合物的气相热解产生相当长的纤维。该方法包括将不具有卤素和氧原子的有机硅化合物直接键合到硅原子上，并且优选具有至少一个与分子中的硅原子键合的至少一个氢原子，与金属或金属的化合物，例如铜，银，钒，铌，钽，铁，钴，镍，钯和铂，在700°至1450℃的温度下，使粉末同时作为催化剂和核通过有机硅化合物的热解形成的碳化硅纤维的生长。当有机硅化合物相对于硅缺乏碳含量时，可以通过热解形成游离硅，将烃与有机硅化合物的进料混合可以解决问题。

7. 发明授权

US4571331A Ultrafine powder of silicon carbide, a method for the preparation thereof and a sintered body therefrom 失效
标题翻译：超细碳化硅粉末，其制备方法和烧结体
公开(公告)号：US4571331A
公开(公告)日：1986-02-18
申请号：US560389
申请日：1983-12-12
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
IPC分类号： C01B31/36 , C04B35/565 , C04B35/575
CPC分类号： B82Y30/00 , C01B31/36 , C04B35/565 , C04B35/575 , C01P2002/72 , C01P2002/82 , C01P2004/62 , C01P2004/64 , C01P2006/40
摘要： The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.
摘要翻译：本发明提供一种制备碳化硅超细粉末的方法，其具有均匀的颗粒尺寸分布的球形聚集体颗粒，它们各自由5nm或更小的微晶形成。碳化硅粉末通过气相热分解制备，所述气相热分解用载气稀释的特定甲基氢（聚）硅烷。氢气，在750〜1600℃的温度下浓度为40体积％以下。碳化硅粉末可以容易地在1750〜2500℃的温度下烧结，即使不添加烧结助剂得到非常高密度的烧结体达到常规碳化硅粉末不可获得的理论值的80％以上。

8. 发明授权

US5011639A Method for the preparation of a sintered body of silicon carbide 失效
标题翻译：制备碳化硅烧结体的方法
公开(公告)号：US5011639A
公开(公告)日：1991-04-30
申请号：US453038
申请日：1989-12-12
申请人： Nobuaki Urasato , Minoru Takamizawa , Akira Hayashida , Hiromi Ohsaki , Jiyunitirow Maruta
发明人： Nobuaki Urasato , Minoru Takamizawa , Akira Hayashida , Hiromi Ohsaki , Jiyunitirow Maruta
IPC分类号： C04B35/565 , C04B35/626 , H01L21/48
CPC分类号： H01L21/4807 , C04B35/565
摘要： A powdery mixture of a fine silicon carbide powder admixed with boron or a boron compound, e.g. boron carbide, titanium boride and boron oxide, as a sintering aid is compression-molded into a green body which is subjected to a sintering treatment into a sintered body. Different from conventional methods in which the sintering treatment is performed always in an atmosphere of an inert gas, e.g. argon, the sintering treatment in the inventive method is performed in an atmosphere of a rare gas containing 0.005-5% by volume of nitrogen. The sintered body of silicon carbide obtained by this method has an outstandingly high electric volume resistivity of 10.sup.10 to 10.sup.13 ohm.cm and a coefficient of thermal conductivity of 100-220 W/m.K.
摘要翻译：与硼或硼化合物混合的细碳化硅粉末的粉末混合物，例如作为烧结助剂的碳化硼，硼化钛和氧化硼被压缩成型坯，其经历烧结处理成烧结体。不同于常规方法，其中始终在惰性气体气氛中进行烧结处理，例如，氩气中，本发明方法中的烧结处理在含有0.005-5体积％氮气的稀有气体的气氛中进行。通过该方法获得的碳化硅烧结体具有极高的体积电阻率为1010至1013欧姆·厘米，导热系数为100-220W / m·K。

9. 发明授权

US4948763A Preparation of hollow ceramic fibers 失效
标题翻译：中空陶瓷纤维的制备
公开(公告)号：US4948763A
公开(公告)日：1990-08-14
申请号：US404584
申请日：1989-09-08
申请人： Akira Hayashida , Minoru Takamizawa , Yoshihumi Takeda
发明人： Akira Hayashida , Minoru Takamizawa , Yoshihumi Takeda
IPC分类号： C04B20/00 , C04B35/571 , C04B35/589 , C08G77/62 , C08L83/16
CPC分类号： C04B20/0056 , C04B35/571 , C04B35/589 , C08G77/62 , C08L83/16
摘要： Hollow ceramic fibers are prepared by melt spinning an organic silazane polymer, infusibilizing the fiber to form an infusible layer on the surface, and pyrolyzing the fiber to obtain a ceramic fiber having an empty interior. The infusibilizing step includes two steps of treating the fiber with a gas containing the vapor of an infusibilizing silicon, boron, phosphorus or metal compound and further treating with a water vapor-containing gas or ammonia-containing gas. The surface infusible fibers are efficiently sintered into hollow ceramic fibers without fusion bond.
摘要翻译：中空陶瓷纤维通过熔融纺丝有机硅氮烷聚合物制备，使纤维不熔化以在表面上形成不熔层，并热解纤维以获得具有空的内部的陶瓷纤维。渗透步骤包括两个步骤：用含有不熔硅，硼，磷或金属化合物的蒸汽的气体处理纤维，并进一步用含水气体气体或含氨气体进行处理。将表面不熔纤维有效地烧结成中空陶瓷纤维而没有熔接。

10. 发明授权

US4847345A Process for manufacturing organic silazane polymers and ceramics therefrom 失效
标题翻译：从其制造有机硅氮烷聚合物和陶瓷的方法
公开(公告)号：US4847345A
公开(公告)日：1989-07-11
申请号：US159315
申请日：1988-02-23
申请人： Minoru Takamizawa , Yoshihumi Takeda , Akira Hayashida , Tsutomu Takeno
发明人： Minoru Takamizawa , Yoshihumi Takeda , Akira Hayashida , Tsutomu Takeno
IPC分类号： C01B21/068 , C01B31/36 , C04B35/571 , C04B35/589 , C08G77/48 , C08G77/60 , C08G77/62 , D01F9/10
CPC分类号： C08G77/60 , C04B35/571 , C04B35/589 , C08G77/62
摘要： A process for manufacturing an organic silazane polymer which comprises reacting an organic silicon compound of the following formula (I): ##STR1## in which R represents hydrogen, chlorine, bromine, methyl radical, ethyl radical, phenyl radical or vinyl radical, R.sub.1 represents hydrogen or methyl radical and X represents chlorine or bromine, or a mixture of organic silicon compounds of the formula (I) above and an organic silicon compound of the following formula (II): ##STR2## in which R.sub.2 and R.sub.3 represent hydrogen, chlorine, bromine, methyl radical, ethyl radical, phenyl radical or vinyl radical and X represents chlorine or bromine with a disilazane of the following formula (III): ##STR3## in which R.sub.4, R.sub.5, R.sub.6 represents hydrogen, methyl radical, ethyl radical, phenyl radical or vinyl radical in an anhydrous state at a temperature of from 25.degree. to 350.degree. C. while distilling off by-produced organic ingredients out of the system to obtain an organic silazane polymer. The organic silazane polymer is useful for preceramic materials.
摘要翻译：一种制备有机硅氮烷聚合物的方法，其包括使下式（I）的有机硅化合物：其中R表示氢，氯，溴，甲基，乙基，苯基或乙烯基，R 1表示氢或甲基，X表示氯或溴，或上述式（I）的有机硅化合物与下式（II）的有机硅化合物的混合物：其中R 2 并且R 3代表氢，氯，溴，甲基，乙基，苯基或乙烯基，X代表氯或溴与下列通式（III）的二硅氮烷：其中R4，R5，R6 在25至350℃的温度下，以无水状态代表氢，甲基，乙基，苯基或乙烯基，同时将副产物的有机成分蒸馏出体系，得到有机硅氮烷聚合物。有机硅氮烷聚合物可用于陶瓷材料。

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