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1. 发明授权

US08501599B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08501599B2
公开(公告)日：2013-08-06
申请号：US12087479
申请日：2007-02-21
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/20 , H01L21/36 , H05B1/02 , C23C16/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
摘要翻译：基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先根据由温度检测部分检测的温度确定温度。

2. 发明授权

US08116618B2 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US08116618B2
公开(公告)日：2012-02-14
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： A45D20/40 , A21B2/00
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

3. 发明申请

US20120011353A1 INFORMATION PROCESSING APPARATUS HAVING VERIFICATION CAPABILITY OF CONFIGURATION CHANGE 有权
标题翻译：具有配置更改验证能力的信息处理设备
公开(公告)号：US20120011353A1
公开(公告)日：2012-01-12
申请号：US13238744
申请日：2011-09-21
申请人： Akira Hayashida
发明人： Akira Hayashida
IPC分类号： G06F9/00
CPC分类号： G06F21/57
摘要： An information processing apparatus having a verification capability of a configuration change. The information processing apparatus includes: a configuration storage unit to store information on components having been connected to the information processing apparatus as reference configuration information; a detecting unit to detect configuration information on components being connected to the information processing apparatus in booting; a comparing unit to compare, detected configuration information and the reference configuration information when the information processing apparatus is booted; a boot control unit to terminate booting of the information processing apparatus when an unequal comparison occurs; a monitoring unit to monitor, after the information processing apparatus is booted, a configuration change of the information processing apparatus in operation; and a dynamic update unit to update, when the configuration change of the information processing apparatus in operation is recognized, the reference configuration information with configuration information of the configuration-changed information processing apparatus.
摘要翻译：具有配置改变的验证能力的信息处理装置。信息处理设备包括：配置存储单元，用于存储关于已经连接到信息处理设备的组件的信息作为参考配置信息; 检测单元，用于检测在启动时连接到信息处理设备的组件的配置信息; 比较单元，用于在信息处理设备启动时比较检测到的配置信息和参考配置信息; 引导控制单元，用于在发生不等的比较时终止信息处理设备的引导; 监视单元，用于在所述信息处理装置启动之后监视所述信息处理装置的运行中的配置更改; 以及动态更新单元，当识别出运行中的信息处理装置的配置更改时，更新具有配置改变信息处理设备的配置信息的参考配置信息。

4. 发明授权

US07700054B2 Substrate processing apparatus having gas side flow via gas inlet 有权
标题翻译：具有通过气体入口的气体侧流动的基板处理装置
公开(公告)号：US07700054B2
公开(公告)日：2010-04-20
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

5. 发明申请

US20090291566A1 Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method 有权
标题翻译：基板处理装置，冷却剂气体供给喷嘴和半导体装置制造方法
公开(公告)号：US20090291566A1
公开(公告)日：2009-11-26
申请号：US11989698
申请日：2006-07-19
申请人： Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
发明人： Masaaki Ueno , Akira Hayashida , Masakazu Shimada , Takenori Oka
IPC分类号： H01L21/477 , C23C16/00
CPC分类号： H01L21/67769 , C23C16/463 , C23C16/54 , H01L21/67109
摘要： A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.
摘要翻译：基板处理装置包括：处理室，用于存储支撑多个基板并用于处理多个基板的船;加热器单元，安装在处理室周围用于加热基板;以及冷却剂气体供给喷嘴，其包括垂直于主体的管段支撑在存储在处理室中的舟皿中的基板的表面，以及形成在管段上用于将冷却剂气体喷射到多个基板中的至少两个的喷射孔，其中冷却剂气体供给喷嘴形成为横截面积在喷孔形成区域中的管段大于喷孔的总开口面积。

6. 发明授权

US6143409A Polycarbodiimide resin-containing adhesive and flexible printed circuit board 失效
标题翻译：含聚碳酰亚胺树脂的粘合剂和柔性印刷电路板
公开(公告)号：US6143409A
公开(公告)日：2000-11-07
申请号：US199366
申请日：1998-11-25
申请人： Yasuyoshi Komoto , Akira Hayashida , Michio Aizawa , Hitoshi Arai , Ken Yahata
发明人： Yasuyoshi Komoto , Akira Hayashida , Michio Aizawa , Hitoshi Arai , Ken Yahata
IPC分类号： B32B7/12 , B32B15/08 , C08G73/00 , H05K1/00 , B32B27/40
CPC分类号： C08G73/00 , B32B15/08 , B32B7/12 , H05K1/0393 , H05K2201/0154 , H05K2201/0355 , Y10T428/2852 , Y10T428/2861 , Y10T428/2896
摘要： Described is an adhesive containing a polycarbodiimide resin having repeating units represented by the following formula:.paren open-st.R--N.dbd.C.dbd.N.paren close-st..sub.nwherein R is a divalent hydrocarbon group and n is an integer of 5 to 250, and also described is a flexible printed circuit board and a coverlay film fabricated using the above-described polycarbodiimide resin-containing adhesive.
摘要翻译：描述了含有具有由下式表示的重复单元的聚碳二亚胺树脂的粘合剂：+545NR = C = N + 546n其中R是二价烃基，n是5至250的整数，并且还描述了一种柔性印刷电路板和使用上述含聚碳酰亚胺树脂的粘合剂制造的覆盖膜。

7. 发明授权

US5770661A Polycarbodiimide derivative and process for producing the same 失效
标题翻译：聚碳二亚胺衍生物及其制造方法
公开(公告)号：US5770661A
公开(公告)日：1998-06-23
申请号：US785170
申请日：1997-01-13
申请人： Hiroshi Miyoshi , Ken Yahata , Yasuyoshi Komoto , Yasuyuki Takiguchi , Akira Hayashida
发明人： Hiroshi Miyoshi , Ken Yahata , Yasuyoshi Komoto , Yasuyuki Takiguchi , Akira Hayashida
IPC分类号： C08G73/00 , C08G73/06 , C08G18/82
CPC分类号： C08G73/00 , C08G73/065
摘要： A polycarbodiimide compound is reacted with an organic compound having at least two amino groups in the molecule. A polycarbodiimide compound is reacted with an amine compound having a silicon atom in the molecule. The carbodiimide bonds remained in the crosslinked material are further crosslinked. The crosslinked material is further heated/calcined to obtain an inorganic material having high heat resistance and strong toughness.
摘要翻译：聚碳二亚胺化合物与分子中具有至少两个氨基的有机化合物反应。聚碳二亚胺化合物与分子中具有硅原子的胺化合物反应。保留在交联材料中的碳二亚胺键进一步交联。将交联材料进一步加热/煅烧，得到耐热性高，韧性强的无机材料。

8. 发明授权

US5599892A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5599892A
公开(公告)日：1997-02-04
申请号：US539757
申请日：1995-10-06
申请人： Akira Hayashida
发明人： Akira Hayashida
IPC分类号： C08G77/60 , C08G77/00
CPC分类号： C08G77/60
摘要： In a process for preparing a polysilane from a diorganodihalosilane and an alkali metal, a low molecular weight polysilane results from the process as a by-product. The low molecular weight polysilane is further reacted with an alkali metal for conversion into a high molecular weight polysilane.
摘要翻译：在从二有机二卤硅烷和碱金属制备聚硅烷的方法中，低分子量聚硅烷作为副产物由该方法得到。低分子量聚硅烷进一步与碱金属反应以转化为高分子量聚硅烷。

9. 发明授权

US5296418A Method for manufacturing a hafnium-containing silazane polymer and a method for manufacturing a ceramic from said polymer 失效
标题翻译：含铪硅氮烷聚合物的制造方法和由所述聚合物制造陶瓷的方法
公开(公告)号：US5296418A
公开(公告)日：1994-03-22
申请号：US951571
申请日：1992-10-23
申请人： Yoshihumi Takeda , Akira Hayashida
发明人： Yoshihumi Takeda , Akira Hayashida
IPC分类号： C04B35/571 , C04B35/589 , C08G77/48 , C08G77/60 , D01F9/10 , C04B35/56
CPC分类号： C04B35/589 , C08G77/60
摘要： A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are(A) a halide of an organic silicon compound;(B) a hafnium compound having a the formula:HfX.sub.4 [I]wherein X is chlorine or bromine, and(C) a disilazane having the formula: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 may be the same or different and are hydrogen, methyl ethyl, phenyl or vinyl.
摘要翻译：通过聚合反应获得含铪硅氮烷聚合物，其反应物为（A）有机硅化合物的卤化物; （B）具有下式的铪化合物：其中X是氯或溴的HfX4（I），和（C）具有下式的二硅氮烷：（*化学结构*）（II）其中R1，R2和R3可以是是氢，甲基乙基，苯基或乙烯基。

10. 发明授权

US5237033A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5237033A
公开(公告)日：1993-08-17
申请号：US850641
申请日：1992-03-13
申请人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
发明人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
IPC分类号： C08G77/60
CPC分类号： C08G77/60
摘要： Polysilanes are synthesized by reacting dihalosilanes in the presence of alkali metal particles while using copper powder, cuprous oxide, cupric oxide, or an organic copper compound as a catalyst. There are obtained high molecular weight polysilanes in high yields.
摘要翻译：聚硅烷通过在碱金属颗粒存在下使二卤代硅烷反应而合成，同时使用铜粉，氧化亚铜，氧化铜或有机铜化合物作为催化剂。以高产率获得高分子量聚硅烷。

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