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    • 2. 发明授权
    • Thin film micromechanical resonator gyro
    • 薄膜微机械谐振陀螺
    • US5438231A
    • 1995-08-01
    • US110524
    • 1993-08-23
    • Mohsen KhoshnevisanManouchehr E. MotamediRatnakar R. Neurgaonkar
    • Mohsen KhoshnevisanManouchehr E. MotamediRatnakar R. Neurgaonkar
    • G01C19/5621H03H9/50H01L41/08
    • H03H9/21G01C19/5621
    • A method to fabricate a tuning fork resonator gyro which uses non-piezoelectric substrate structure is proposed. The tuning fork structure can be effectively rendered piezoelectric for activation and sensing by thin film deposition of a piezoelectric material. Electrical excitation of the piezo film excites vibrations in the structure of the drive tuning fork, and the gyro signal generated due to rotation can be picked up from the piezo film on the signal tuning fork. Most piezoelectric films have a much higher piezoelectric coupling than crystalline quartz, the material used in the prior art. The piezoelectric films on mechanically hard non-piezoelectric substrates are simpler for fabrication, electroding, and have a number of other advantages over the prior art. Fabrication of the tuning fork structures can be done more simply than the prior art, and deposition of the piezo films can be accomplished by sol-gel, or other thin film techniques. The proposed methods thus provide considerable flexibility to separately optimize the resonator structure in terms of the physical and mechanical properties of the structure, the required piezoelectric properties, and methods for fabrication, processing and low cost manufacturing of resonator gyros.
    • 提出了一种制造使用非压电衬底结构的音叉谐振器陀螺仪的方法。 音叉结构可以通过压电材料的薄膜沉积而被有效地压制成用于激活和感测。 压电膜的电激发激发驱动音叉结构中的振动,并且可以从信号音叉上的压电膜拾取由于旋转而产生的陀螺仪信号。 大多数压电膜具有比结晶石英(现有技术中使用的材料)高得多的压电耦合。 机械硬非压电基片上的压电膜比制造,电镀更简单,并且具有优于现有技术的许多其它优点。 音叉结构的制作可以比现有技术更简单,并且压电薄膜的沉积可以通过溶胶 - 凝胶或其它薄膜技术来实现。 因此,所提出的方法提供了相当大的灵活性,以便在结构的物理和机械性质,所需的压电特性以及谐振器陀螺仪的制造,处理和低成本制造的方法方面分别优化谐振器结构。
    • 4. 发明授权
    • Push-pull high force piezoelectric linear motor
    • 推拉式高压压电直线电机
    • US06246157B1
    • 2001-06-12
    • US09379887
    • 1999-08-23
    • John R. OliverRatnakar R. Neurgaonkar
    • John R. OliverRatnakar R. Neurgaonkar
    • H01L4108
    • H02N2/023
    • A high force linear displacement piezoelectric motor operates with equal force and reliability in both the push and pull mode. The new motor includes a split motor shaft having with two shaft segments that are coaxially affixed to opposite sides of an expandable and contractable displacement actuator. The displacement actuator has a piezoelectric body coincident with the axis of the shaft segments such that the expansion of the piezoelectric body increases the length of the split motor shaft. The motor has a set of clamps that receive and close on the shaft segments to hold them in place, or open to allow axial displacement of the shaft segments. Linear motion of the split shaft motor is produced by coordinating the opening and closing the clamps with the expansion and contraction of the piezoelectric body.
    • 高力线性位移压电电动机在推挽模式下均具有相同的力和可靠性。 新的电动机包括具有两个轴段的分离电动机轴,其同轴地固定在可膨胀和可收缩的位移致动器的相对侧上。 位移致动器具有与轴部分的轴线重合的压电体,使得压电体的膨胀增加了分离电动机轴的长度。 电机具有一组夹具,用于接收和关闭轴段,将其保持在适当位置,或打开以允许轴段的轴向位移。 通过使夹具的开闭动作与压电体的膨胀收缩协调来产生分裂轴马达的直线运动。
    • 6. 发明授权
    • Nb-doped PLZT piezoelectric ceramics
    • Nb掺杂PLZT压电陶瓷
    • US5595677A
    • 1997-01-21
    • US452923
    • 1995-05-30
    • Ratnakar R. NeurgaonkarJohn R. OliverJeffrey G. Nelson
    • Ratnakar R. NeurgaonkarJohn R. OliverJeffrey G. Nelson
    • C04B35/491H01L41/187
    • C04B35/491H01L41/187
    • PLZT piezoelectric ceramics having the general formula (Pb.sub.1-x La.sub.x)(Zr.sub.y Ti.sub.1-y).sub.1-(x/4) O.sub.3 are fabricated in a hot forging process using PbO, TiO.sub.2, ZrO.sub.2, and La.sub.2 O.sub.3 powders as starting materials with Nb.sub.2 O.sub.5 added to provide niobium (Nb) as a dopant. The ZrO.sub.2 and TiO.sub.2 powders are mixed at a molar ratio of y/(1-y), calcined at approximately 1300.degree.-1500.degree. C., ball milled in acetone, and evaporated to a dry powder. The mixture of ZrO.sub.2 and TiO.sub.2 is then combined with the PbO, La.sub.2 O.sub.3, and Nb.sub.2 O.sub.5 powders, and the new mixture is ball milled in acetone, evaporated to a dry powder, calcined at approximately 700.degree.-850.degree. C., and sifted to obtain a particle size of approximately 0.3-2.0 .mu.m. The final PLZT powder is formed into the desired shape by cold pressing followed by sintering at approximately 1000.degree.-1150.degree. C. in oxygen. The PLZT ceramic material is further densifted to about 98.5% of the material's theoretical maximum density by heating to approximately 1175.degree.-1275.degree. C. at 800-1200 psi uniaxial pressure. The resulting high performance Nb-doped PLZT piezoelectric ceramic exhibits an average grain size of about 3 .mu.m, a well-defined polarization hysteresis loop, reduced strain hysteresis with the application of a unipolar electric field, a breakdown strength greater than 25 kV/cm, a linear piezoelectric coefficient (d.sub.33) greater than 750, maximum strain greater than 0.15%, and a fatigue life of at least 10.sup.10 cycles.
    • 在使用PbO,TiO 2,ZrO 2和La 2 O 3粉末作为起始原料的热锻造工艺中制备具有通式(Pb1-xLax)(Zry Ti1-y)1-(x / 4)O3的PLZT压电陶瓷,其中添加Nb 2 O 5 提供铌(Nb)作为掺杂剂。 将ZrO 2和TiO 2粉末以y /(1-y)的摩尔比混合,在约1300-150℃下煅烧,在丙酮中球磨,并蒸发成干燥粉末。 然后将ZrO 2和TiO 2的混合物与PbO,La 2 O 3和Nb 2 O 5粉末组合,将新混合物在丙酮中球磨,蒸发至干粉末,在约700℃-850℃下煅烧,并筛分得到 粒径约0.3-2.0μm。 通过冷压将最终的PLZT粉末形成所需形状,然后在约1000-111℃在氧气中烧结。 通过在800-1200psi单轴压力下加热至约1175℃-1275℃,将PLZT陶瓷材料进一步致密化为材料理论最大密度的约98.5%。 所得到的高性能Nb掺杂的PLZT压电陶瓷的平均晶粒尺寸约为3μm,明确的极化磁滞回线,施加单极电场减小的应变滞后,击穿强度大于25kV / cm ,大于750的线性压电系数(d33),最大应变大于0.15%,疲劳寿命至少为1010次。
    • 7. 发明授权
    • High temperature, high strain piezoelectric compositions
    • 高温高应变压电组合物
    • US06279878B1
    • 2001-08-28
    • US09561094
    • 2000-04-28
    • Jeffrey G. NelsonRatnakar R. Neurgaonkar
    • Jeffrey G. NelsonRatnakar R. Neurgaonkar
    • C04B35493
    • H01L41/187C04B35/491C04B35/493
    • PLZT piezoelectric ceramics having the general formula (Pb1−xLax)(ZryTi1−y)1−(x/4)−zMa+4z/a O3 are fabricated in a hot forging process using PbO, TiO2, ZrO2, and La2O3 powders with Nb2O5 and Ta2O5 added to provide 2.0-3.0% Nb5+ (mole %) and 2.0-3.0% Ta+5 (mole %) as a dopant. ZrO2 and TiO2 powders are mixed at a molar ratio of y/(1−y), the preferred molar ratio being 55/45, calcined at approximately 1300° C.-1500° C., ball milled in acetone, and evaporated to a dry powder. The mixture of ZrO2 and TiO2 is then combined with PbO2, La2O3, Nb2O5 and Ta2O5 powders, and the new mixture is ball milled in acetone, evaporated to a dry powder, calcined at approximately 700°-850° C., and sifted to obtain a particle size of approximately 0.5-1.5 &mgr;m. The final Nb/Ta-doped PLZT powder is formed into the desired shape by cold pressing followed by sintering at approximately 1000° C.-1150° C. in oxygen. The PLZT ceramic material is further densified to about 98.5% of the material's theoretical maximum density by heating to approximately 1175° C.-1275° C. at 300-1200 psi uniaxial pressure. The resulting high temperature, high performance Nb/Ta-doped PLZT piezoelectric ceramic exhibits an average grain size of about 3 &mgr;m, a well-defined polarization hysteresis loop, reduced strain hysteresis with the application of a unipolar electric field, a breakdown strength greater than 25 kV/cm, a linear piezoelectric coefficient (d33) of about 790 pC/N, maximum strain greater than 0.16%, and a fatigue life of at least 108 cycles and a Tc of about 205-208° C.
    • 具有通式(Pb1-xLax)(ZryTi1-y)1-(x / 4)-zMa + 4z / aO3的PLZT压电陶瓷是在使用PbO,TiO2,ZrO2和La2O3粉末与Nb2O5的热锻造工艺中制造的 并添加Ta2O5,以提供2.0-3.0%的Nb5 +(摩尔%)和2.0-3.0%的Ta + 5(摩尔%)作为掺杂剂。 ZrO 2和TiO 2粉末以y /(1-y)的摩尔比混合,优选的摩尔比为55/45,在约1300℃-1500℃下煅烧,在丙酮中球磨并蒸发至 干燥的粉。 然后将ZrO 2和TiO 2的混合物与PbO 2,La 2 O 3,Nb 2 O 5和Ta 2 O 5粉末组合,将新混合物在丙酮中球磨,蒸发至干粉末,在约700℃-850℃下煅烧,并筛分得到 粒径约为0.5-1.5μm。 通过冷压将最终的Nb / Ta掺杂的PLZT粉末形成所需的形状,然后在约1000℃-1150℃的氧气中烧结。 通过在300-1200psi单轴压力下加热至约1175℃-1275℃,将PLZT陶瓷材料进一步致密化为材料理论最大密度的约98.5%。 所得到的高温,高性能Nb / Ta掺杂的PLZT压电陶瓷的平均晶粒尺寸约为3μm,明确的极化磁滞回线,应用单极电场的应变滞后减小,击穿强度大于 25kV / cm,约790pC / N的线性压电系数(d33),最大应变大于0.16%,疲劳寿命至少为108次循环,Tc为约205-208℃。
    • 8. 发明授权
    • Method of fabricating PLZT piezoelectric ceramics
    • 制造PLZT压电陶瓷的方法
    • US5607632A
    • 1997-03-04
    • US452927
    • 1995-05-30
    • Ratnakar R. NeurgaonkarJohn R. OliverJeffrey G. Nelson
    • Ratnakar R. NeurgaonkarJohn R. OliverJeffrey G. Nelson
    • C04B35/491C04B35/49
    • C04B35/491
    • PLZT piezoelectric ceramics having the general formula (Pb.sub.1-x La.sub.x)(Zr.sub.y Ti.sub.1-y).sub.1-(x/4) O.sub.3 are fabricated in a hot forging process using PbO, TiO.sub.2, ZrO.sub.2, and La.sub.2 O.sub.3 powders as starting materials with Nb.sub.2 O.sub.5 added to provide Nb as a dopant. The ZrO.sub.2 and TiO.sub.2 powders are mixed at a molar ratio of y/(1-y), calcined at approximately 1300.degree.-1500.degree. C., ball milled in acetone, and evaporated to a dry powder. The mixture of ZrO.sub.2 and TiO.sub.2 is then combined with the PbO, La.sub.2 O.sub.3, and Nb.sub.2 O.sub.5 powders, and the new mixture is ball milled in acetone, evaporated to a dry powder, calcined at approximately 700.degree.-850.degree. C., and sifted to obtain a particle size of approximately 0.3-2.0 .mu.m. The final PLZT powder is formed into the desired shape by cold pressing followed by sintering at approximately 1000.degree.-1150.degree. C. in oxygen. The PLZT ceramic material is further densified to about 98.5% of the material's theoretical maximum density by heating to approximately 1175.degree.-1275.degree. C. at 800-1200 psi uniaxial pressure. The resulting high performance Nb-doped PLZT piezoelectric ceramic exhibits an average grain size of about 3 .mu.m, a well-defined polarization hysteresis loop, reduced strain hysteresis with the application of a unipolar electric field, a breakdown strength greater than 25 kV/cm, a linear piezoelectric coefficient (d.sub.33) greater than 750, maximum strain greater than 0.15%, and a fatigue life of at least 10.sup.10 cycles.
    • 在使用PbO,TiO 2,ZrO 2和La 2 O 3粉末作为原料的热锻造工艺中制造具有通式(Pb1-xLax)(ZryTi1-y)1-(x / 4)O3)的PLZT压电陶瓷, Nb作为掺杂剂。 将ZrO 2和TiO 2粉末以y /(1-y)的摩尔比混合,在约1300-150℃下煅烧,在丙酮中球磨,并蒸发成干燥粉末。 然后将ZrO 2和TiO 2的混合物与PbO,La 2 O 3和Nb 2 O 5粉末组合,将新混合物在丙酮中球磨,蒸发至干粉末,在约700℃-850℃下煅烧,并筛分得到 粒径约0.3-2.0μm。 通过冷压将最终的PLZT粉末形成所需形状,然后在约1000-111℃在氧气中烧结。 PLZT陶瓷材料通过在800-1200psi单轴压力下加热至约1175℃-1275℃,进一步致密化至材料理论最大密度的约98.5%。 所得到的高性能Nb掺杂的PLZT压电陶瓷的平均晶粒尺寸约为3μm,明确的极化磁滞回线,施加单极电场减小的应变滞后,击穿强度大于25kV / cm ,大于750的线性压电系数(d33),最大应变大于0.15%,疲劳寿命至少为1010次。