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1. 发明授权

US5401674A Germanium implant for use with ultra-shallow junctions 失效
标题翻译：用于超浅结的锗植入物
公开(公告)号：US5401674A
公开(公告)日：1995-03-28
申请号：US258330
申请日：1994-06-10
申请人： Mohammed Anjum , Ibrahim Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim Burki , Craig W. Christian
IPC分类号： H01L21/285 , H01L21/265 , H01L21/283
CPC分类号： H01L21/28518 , Y10S148/019 , Y10S148/032 , Y10S148/034 , Y10S148/058
摘要： A method is provided for reducing growth of silicide and the temperatures necessary to produce silicide. Germanium is implanted at a concentration peak density depth below the midline and above the lower surface of a metal layer receiving the implant. Subsequent anneal causes germanide to occupy an area above growing silicide such that consumption of silicon atoms is reduced, and that silicide is formed to a controlled thickness.
摘要翻译：提供了一种减少硅化物生长和生产硅化物所需的温度的方法。以注入植入物的金属层的中线和下表面以上的浓度峰值密度深度注入锗。随后的退火导致锗化物占据生长硅化物以上的区域，使得硅原子的消耗减少，并且将硅化物形成为受控的厚度。

2. 发明授权

US5470794A Method for forming a silicide using ion beam mixing 失效
标题翻译：使用离子束混合形成硅化物的方法
公开(公告)号：US5470794A
公开(公告)日：1995-11-28
申请号：US200628
申请日：1994-02-23
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/265 , H01L21/285 , H01L21/336 , H01L21/283
CPC分类号： H01L29/66575 , H01L21/26506 , H01L21/26526 , H01L21/28518 , Y10S148/019
摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implanted germanium atoms impact upon and move a plurality of metal atoms through the metal-silicon interface and into a region residing immediately below the silicon (or polysilicon) surface. The metal atoms can therefore bond with silicon atoms to cause a pre-mixing of metal with silicon near the interface in order to enhance silicidation. Germanium is advantageously chosen as the irradiating species to ensure proper placement of the germanium and ensuing movement of dislodged metal atoms necessary for minimizing oxides left in the contact windows and lattice damage within the underlying silicon (or polysilicon).
摘要翻译：提供了一种用于在半导体衬底上制造金属硅化物的改进方法。该方法通过将锗注入到覆盖硅接触区域的金属层内的特定高度水平上来利用离子束混合。植入的锗原子冲击并移动多个金属原子通过金属 - 硅界面并移动到位于硅（或多晶硅）表面正下方的区域中。因此，为了增强硅化物，金属原子可以与硅原子键合以在界面附近引起金属与硅的预混合。有利地，锗被选择为照射种类，以确保锗的适当放置和随后的移动的金属原子的移动，以使残留在接触窗口中的氧化物和底层硅（或多晶硅）中的晶格损伤最小化。

3. 发明授权

US5444024A Method for low energy implantation of argon to control titanium silicide formation 失效
标题翻译：用于低能量注入氩气以控制硅化钛形成的方法
公开(公告)号：US5444024A
公开(公告)日：1995-08-22
申请号：US258542
申请日：1994-06-10
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/285 , H01L21/265 , H01L21/28
CPC分类号： H01L21/28518 , Y10S148/019 , Y10S148/144
摘要： A method is provided for controlling growth of silicide to a defined thickness based upon the relative position of peak concentration density depth within a layer of titanium. The titanium layer is deposited over silicon and namely over the silicon junction regions. Thereafter the titanium is implanted with argon ions. The argon ions are implanted at a peak concentration density level corresponding to a depth relative to the upper surface of the titanium. The peak concentration density depth can vary depending upon the dosage and implant energies of the ion implanter. Preferably, the peak concentration density depth is at a midpoint between the upper and lower surfaces of the titanium or at an elevational level beneath the midpoint and above the lower surface of the titanium. Subsequent anneal of the argon-implanted titanium causes the argon atoms to occupy a diffusion area normally taken by silicon consumed and growing within overlying titanium. However, based upon the presence of argon, the diffusion length and therefore the silicide thickness is reduced to a controllable amount necessary for applications with ultra-shallow junction depths.
摘要翻译：提供了一种基于钛层内的峰浓度密度深度的相对位置来控制硅化物的规定厚度的方法。钛层沉积在硅上，即在硅结区上。之后，用氩离子注入钛。以与钛的上表面相对应的深度的峰值浓度密度水平注入氩离子。峰浓度密度深度可以根据离子注入机的剂量和植入能量而变化。优选地，峰浓度密度深度处于钛的上表面和下表面之间的中点处，或者在钛的下表面上方的中点以上。氩注入钛的后续退火导致氩原子占据通常被硅消耗并在上覆钛内生长的扩散区域。然而，基于氩的存在，扩散长度以及因此的硅化物厚度减小到具有超浅结深度的应用所需的可控量。

4. 发明授权

US5661335A Semicondutor having selectively enhanced field oxide areas and method for producing same 失效
标题翻译：具有选择性增强的场氧化物区域的半导体及其制造方法
公开(公告)号：US5661335A
公开(公告)日：1997-08-26
申请号：US515285
申请日：1995-08-15
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/265 , H01L21/762 , H01L23/58 , H01L29/00
CPC分类号： H01L21/26506 , H01L21/76213 , H01L2924/0002 , Y10S438/981
摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.
摘要翻译：提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。在最初生长和植入之后，发生通过重组的氧化物的增稠。因此，可以缩短初始热氧化以提高生产量。因此，氟增强增稠效果可以补偿较短的热氧化时间。此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。

5. 发明授权

US5550084A Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer 失效
标题翻译：使用具有溅射沉积的金属氮化物层的金属硅化物的集成电路制造
公开(公告)号：US5550084A
公开(公告)日：1996-08-27
申请号：US375126
申请日：1995-01-17
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/285 , H01L21/336 , H01L29/45 , H01L29/78 , H01L21/44 , H01L21/48
CPC分类号： H01L29/6659 , H01L21/28518 , H01L29/456 , H01L29/665 , H01L29/7833 , Y10S148/169
摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method advantageously places a film of metal nitride upon the metal layer. The metal nitride layer and metal layer are sputter deposited within the same chamber without removing the substrate from the vacuum so as to prevent oxygen or moisture from contaminating the metal layer and causing oxides to form thereon. Furthermore, the metal nitride layer is reactively sputter deposited in a nitrogen/argon ambient to allow precise amounts of nitrogen to be deposited across uneven surface topography directly adjacent to the underlying metal layer. Excess nitrogen purposefully deposited within the metal nitride layer consumes a controlled depth of metal bond sites within the underlying metal layer so as to limit the amount of silicidation from underlying silicon or polysilicon into the metal thereby substantially eliminating or minimizing silicide shorting problems.
摘要翻译：提供了一种用于在半导体衬底上制造金属硅化物的改进方法。该方法有利地将金属氮化物膜放置在金属层上。金属氮化物层和金属层溅射沉积在相同的室内，而不从真空中去除衬底，以防止氧气或水分污染金属层并引起氧化物在其上形成。此外，金属氮化物层在氮气/氩气环境中被反应溅射沉积，以允许精确量的氮沉积在与下面的金属层直接相邻的不平坦表面形貌之间。有目的地沉积在金属氮化物层内的过多的氮消耗了下层金属层内的金属结合位置的受控深度，从而限制从底层硅或多晶硅到金属中的硅化物的量，从而基本上消除或最小化硅化物短路问题。

6. 发明授权

US5372951A Method of making a semiconductor having selectively enhanced field oxide areas 失效
标题翻译：制造具有选择性增强的场氧化物区域的半导体的方法
公开(公告)号：US5372951A
公开(公告)日：1994-12-13
申请号：US131194
申请日：1993-10-01
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/265 , H01L21/762 , H01L21/266
CPC分类号： H01L21/26506 , H01L21/76213 , H01L2924/0002 , Y10S438/981
摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.
摘要翻译：提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。在最初生长和植入之后，发生通过重组的氧化物的增稠。因此，可以缩短初始热氧化以提高生产量。因此，氟增强增稠效果可以补偿较短的热氧化时间。此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。

7. 发明授权

US5393676A Method of fabricating semiconductor gate electrode with fluorine migration barrier 失效
标题翻译：制造具有氟迁移屏障的半导体栅电极的方法
公开(公告)号：US5393676A
公开(公告)日：1995-02-28
申请号：US125421
申请日：1993-09-22
申请人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
发明人： Mohammed Anjum , Ibrahim K. Burki , Craig W. Christian
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L21/265
CPC分类号： H01L29/66575 , H01L21/28052 , H01L29/4916 , H01L29/4933 , H01L29/665
摘要： A PMOS device is provided having a diffusion barrier placed within a polysilicon gate material. The diffusion barrier is purposefully implanted to a deeper depth within the gate material than subsequently placed impurity dopants. The barrier comprises Ar atoms placed in fairly close proximity to one another within the gate conductor, and the impurity dopant comprises ions of BF.sub.2. F from the impurity dopant of BF.sub.2 is prevented from diffusing to underlying silicon-oxide bonds residing within the oxide bulk. By minimizing F migration to the bond sites, the present polysilicon barrier and method of manufacture can minimize oxygen dislodgment and recombination at the interface regions between the polysilicon and the gate oxide as well as between the gate oxide and silicon substrate.
摘要翻译：提供PMOS器件，其具有放置在多晶硅栅极材料内的扩散势垒。扩散阻挡层被有目的地植入到栅极材料内比之后放置的杂质掺杂物更深的深度。势垒包括在栅极导体内彼此相当接近的Ar原子，杂质掺杂物包含BF 2的离子。来自BF 2的杂质掺杂剂的F被阻止扩散到位于氧化物体内的下面的氧化硅键。通过最小化F迁移到键合位置，本多晶硅势垒和制造方法可以使多晶硅和栅极氧化物之间以及栅极氧化物和硅衬底之间的界面区域处的氧分离和复合最小化。

8. 发明授权

US06482719B1 Semiconductor field region implant methodology 失效
标题翻译：半导体领域植入方法
公开(公告)号：US06482719B1
公开(公告)日：2002-11-19
申请号：US08526149
申请日：1995-08-02
申请人： Mohammed Anjum , Alan L. Stuber , Maung H. Kyaw
发明人： Mohammed Anjum , Alan L. Stuber , Maung H. Kyaw
IPC分类号： H01L2130
CPC分类号： H01L21/76216 , H01L21/823481
摘要： An MOS device is provided having a channel-stop implant placed between active regions and beneath field oxides. The channel-stop dopant material is a p-type material of atomic weight greater than boron, and preferably utilizes solely indium ions. The indium ions, once implanted, have a greater tendency to remain in their position than boron ions. Subsequent temperature cycles caused by, for example, field oxide growth do not significantly change the initial implant position. Thus, NMOS devices utilizing indium channel-stop dopant can achieve higher pn junction breakdown voltages and lower parasitic source/drain-to-substrate capacitances. Furthermore, the heavier indium ions can be more accurately placed than lighter boron ions to a region just below the silicon layer which is to be consumed by subsequent field oxide growth. By fixing the peak concentration density of indium at a depth just below the field oxide lower surface, channel-stop implant region is very shallow. Small dispersions in range allow for more precise control of the indium atoms just below the field oxide, further from the inner bulk material of the underlying substrate.
摘要翻译：提供了MOS器件，其具有放置在有源区域之间和场氧化物之下的通道停止植入物。通道阻挡掺杂剂材料是原子量大于硼的p型材料，并且优选仅使用铟离子。一旦注入，铟离子比硼离子具有更大的保留位置的倾向。由例如场氧化物生长引起的后续温度循环不会显着改变初始植入位置。因此，利用铟通道停止掺杂剂的NMOS器件可以实现更高的pn结击穿电压和较低的寄生源/漏极到衬底电容。此外，较重的铟离子可以比较轻的硼离子更准确地放置在正好在随后的场氧化物生长消耗的硅层之下的区域。通过在刚好低于场氧化物下表面的深度固定铟的峰浓度密度，通道停止注入区非常浅。范围内的小分散体允许对场氧化物正下方的铟原子进行更精确的控制，远离底层基底的内部体积材料。

9. 发明授权

US5593907A Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices 失效
标题翻译：用于降低NMOS集成电路器件中的亚阈值电流的大倾角硼注入方法
公开(公告)号：US5593907A
公开(公告)日：1997-01-14
申请号：US400609
申请日：1995-03-08
申请人： Mohammed Anjum , Klaus H. Koop , Maung H. Kyaw
发明人： Mohammed Anjum , Klaus H. Koop , Maung H. Kyaw
IPC分类号： H01L21/265 , H01L21/336 , H01L29/423 , H01L29/78
CPC分类号： H01L29/6659 , H01L21/26513 , H01L21/26586 , H01L29/42376 , H01L29/7833
摘要： A semiconductor structure with large tile angle boron implant is provided for reducing threshold shifts or rolloff at the channel edges. By minimizing threshold shifts, short channel effects and subthreshold currents at or near the substrate surface are lessened. The semiconductor structure is prepared by implanting boron at a non-perpendicular into the juncture between the channel and the source/drain as well as the juncture between the field areas and the source/drain. Placement of boron into these critical regions replenishes segregating and redistributing threshold adjust implant species and channel stop implant species resulting from process temperature cycles. Using lighter boron ions allow for a lesser annealing temperature and thereby avoids the disadvantages of enhanced redistribution and diffusion caused by high temperature anneal.
摘要翻译：提供了具有大瓦片角度硼注入的半导体结构，用于减少通道边缘处的阈值偏移或滚降。通过最小化阈值偏移，减小衬底表面处或附近的短沟道效应和亚阈值电流。半导体结构通过在非垂直方向上注入硼，在沟道和源极/漏极之间的接合处以及场区域和源极/漏极之间的接合处来制备。将硼置入这些关键区域补充了分离和重新分配由工艺温度循环产生的阈值调整植入物种和通道停止植入物种。使用较轻的硼离子允许较小的退火温度，从而避免了由高温退火引起的增强再分配和扩散的缺点。

10. 发明授权

US5965932A Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron 失效
标题翻译：使用含有钛和硼的注入分子的浅层能量结植入物的无污染源
公开(公告)号：US5965932A
公开(公告)日：1999-10-12
申请号：US73257
申请日：1998-05-05
申请人： Gurtej S. Sandhu , Mohammed Anjum
发明人： Gurtej S. Sandhu , Mohammed Anjum
IPC分类号： H01L21/265 , H01L21/285
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/28518
摘要： A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant species is an ionic molecule that contains titanium and boron.
摘要翻译：公开了一种通过离子注入在半导体晶体衬底中形成P型区的方法，其中注入物质是含有钛和硼的离子分子。

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