专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07897024B2 Conducting belt for use with anode holder and anode holder 有权
标题翻译：导电带用于阳极支架和阳极支架
公开(公告)号：US07897024B2
公开(公告)日：2011-03-01
申请号：US12073348
申请日：2008-03-04
申请人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki , Yoshio Minami , Tomoyasu Nagayumi
发明人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki , Yoshio Minami , Tomoyasu Nagayumi
IPC分类号： C25B9/04 , C25D17/06 , C25D17/08
CPC分类号： C25D17/12
摘要： A conducting belt is used with an anode holder for supplying an electric current to an anode for plating a surface of a substrate such as a semiconductor wafer. The anode and the substrate are vertically disposed so as to face each other in a plating tank of a plating apparatus. The conducting belt includes a belt capable of contacting an outer circumferential edge of the anode and holding the anode.
摘要翻译：导电带与阳极保持器一起使用，用于向阳极提供电流，以电镀诸如半导体晶片的基板的表面。阳极和基板在电镀装置的镀槽中垂直配置以相互面对。导电带包括能够接触阳极的外周缘并保持阳极的带。

2. 发明申请

US20090050473A1 Conducting belt for use with anode holder and anode holder 有权
标题翻译：导电带用于阳极支架和阳极支架
公开(公告)号：US20090050473A1
公开(公告)日：2009-02-26
申请号：US12073348
申请日：2008-03-04
申请人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki , Yoshio Minami , Tomoyasu Nagayumi
发明人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki , Yoshio Minami , Tomoyasu Nagayumi
IPC分类号： C25D17/10
CPC分类号： C25D17/12
摘要： A conducting belt is used with an anode holder for supplying an electric current to an anode for plating a surface of a substrate such as a semiconductor wafer. The anode and the substrate are vertically disposed so as to face each other in a plating tank of a plating apparatus. The conducting belt includes a belt capable of contacting an outer circumferential edge of the anode and holding the anode.
摘要翻译：导电带与阳极保持器一起使用，用于向阳极提供电流，以电镀诸如半导体晶片的基板的表面。阳极和基板在电镀装置的镀槽中垂直配置以相互面对。导电带包括能够接触阳极的外周缘并保持阳极的带。

3. 外观设计

USD556692S1 Electrical contact for use in a plating apparatus 有权
标题翻译：用于电镀设备的电接点
公开(公告)号：USD556692S1
公开(公告)日：2007-12-04
申请号：US29270693
申请日：2007-01-03
申请人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki
设计人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki

4. 外观设计

USD555595S1 Electrical contact for use in a plating apparatus 有权
公开(公告)号：USD555595S1
公开(公告)日：2007-11-20
申请号：US29270692
申请日：2007-01-03
申请人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki
设计人： Mitsutoshi Yahagi , Kenichi Abe , Yuji Araki

5. 发明授权

US06921722B2 Coating, modification and etching of substrate surface with particle beam irradiation of the same 失效
标题翻译：用其粒子束照射进行涂层，改性和蚀刻基材表面
公开(公告)号：US06921722B2
公开(公告)日：2005-07-26
申请号：US09866843
申请日：2001-05-30
申请人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
发明人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
IPC分类号： C23C16/18 , C23C16/452 , C23C16/48 , H01J37/32 , H01L21/285 , H01L21/3213 , H01L21/302
CPC分类号： H01J37/32422 , C23C16/18 , C23C16/452 , C23C16/486 , C23C16/487 , H01J37/3233 , H01L21/28556 , H01L21/32136
摘要： There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.
摘要翻译：提供了在基板的表面上进行表面处理如涂层，变性，改性和蚀刻的方法。该方法包括以下步骤：使表面处理气体与基板的表面接触，并用快速粒子束照射基板的表面，以增强表面和/或表面处理气体的活性，由此有助于表面和气体之间的反应。快速粒子束可以选自电子束，带电粒子束，原子束和分子束。例如，在涂布操作期间，将气体的预定组分元素化学沉积到表面上，并且用颗粒束照射基板的表面的预定部分，以在预定部分上形成涂层。

6. 发明授权

US6116267A Valving device 失效
标题翻译：阀门装置
公开(公告)号：US6116267A
公开(公告)日：2000-09-12
申请号：US172146
申请日：1998-10-14
申请人： Hidenao Suzuki , Kuniaki Horie , Kiwamu Tsukamoto , Yuji Araki
发明人： Hidenao Suzuki , Kuniaki Horie , Kiwamu Tsukamoto , Yuji Araki
IPC分类号： F16K7/17 , F16K41/10 , F16K41/12 , F16K49/00
CPC分类号： F16K41/12 , F16K41/10 , F16K49/005 , Y10T137/6579
摘要： A valving device can operate stably to provide switching or flow rate control operations, even when it is used for controlling thermodynamically unstable gases. The valving device including a valve casing having an internal passage for process fluids. A valve body is movable against a valve seat for adjusting opening of the internal passage, and a valve driving mechanism can drive the valve body. A flexible member is provided for separating a fluid handling space including the internal passage from a valve mechanism space for housing the valve driving mechanism. A thermal medium space is formed within the valve mechanism space for receiving a thermal medium for providing heat to the valve body.
摘要翻译：即使用于控制热力学不稳定的气体，阀门装置也可以稳定运行，以提供切换或流量控制操作。阀装置包括具有用于处理流体的内部通道的阀壳体。阀体可以抵靠阀座移动，用于调节内部通道的开口，阀驱动机构可以驱动阀体。提供了一种柔性构件，用于将包括内部通道的流体处理空间与用于容纳阀驱动机构的阀机构空间分离。在阀机构空间内形成有热介质空间，用于接收用于向阀体提供热量的热介质。

7. 发明授权

US06488774B1 Trap apparatus 失效
标题翻译：陷阱装置
公开(公告)号：US06488774B1
公开(公告)日：2002-12-03
申请号：US09512333
申请日：2000-02-24
申请人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
发明人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , B01D5/0027 , B01D8/00 , Y02C20/30
摘要： A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.
摘要翻译：捕集装置最适于捕获从气相沉积装置排出的材料气体，用于沉积在基底上的高电介质或铁电体如钡/锶钛酸盐的气相薄膜中。捕集装置设置在真空处理室的下游。真空处理室用于处理基板。捕集装置用于捕获从真空处理室排出的气体中所含的具有低蒸气压的部件。捕集装置包括用于引入从真空处理室排出的气体的捕集容器和设置在捕集容器中的冷却装置，用于将气体冷却至等于或低于气体成分的冷凝温度的温度气体容易液化。

8. 发明授权

US06458694B2 High energy sputtering method for forming interconnects 失效
标题翻译：用于形成互连的高能溅射方法
公开(公告)号：US06458694B2
公开(公告)日：2002-10-01
申请号：US09767145
申请日：2001-01-23
申请人： Naoaki Ogure , Takao Kato , Kuniaki Horie , Yuji Araki
发明人： Naoaki Ogure , Takao Kato , Kuniaki Horie , Yuji Araki
IPC分类号： H01L21443
CPC分类号： H01L21/76873 , C23C14/046 , C23C14/35 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.
摘要翻译：本发明涉及一种在诸如半导体晶片的衬底上形成互连的方法和装置，该方法和装置通过在衬底的表面中形成的精细凹槽中填充诸如铜（Cu）的导电材料。一种用于形成互连的方法包括在室内相互对置地提供由导电材料构成的基板和靶，将溅射气体引入室中，同时在基板和靶之间施加高电压以引起溅射气体与目标物碰撞，在基板的表面上沉积从靶发射的导电材料的粒子，形成薄膜，同时通过反射溅射气体分子溅射蚀刻薄膜，反射溅射气体分子并且具有高能量。

9. 发明授权

US06269221B1 Liquid feed vaporization system and gas injection device 失效
公开(公告)号：US06269221B1
公开(公告)日：2001-07-31
申请号：US09662897
申请日：2000-09-15
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号： F22B2906
CPC分类号： C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

10. 外观设计

USD649986S1 Sealing ring 有权
标题翻译：密封圈
公开(公告)号：USD649986S1
公开(公告)日：2011-12-06
申请号：US29368047
申请日：2010-08-17
申请人： Jumpei Fujikata , Yuji Araki , Masaaki Kimura
设计人： Jumpei Fujikata , Yuji Araki , Masaaki Kimura

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式