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1. 发明授权

US06300190B1 Method for fabricating semiconductor integrated circuit device 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US06300190B1
公开(公告)日：2001-10-09
申请号：US09452389
申请日：1999-12-01
申请人： Mitsuru Nishitsuji , Yoshiharu Anda , Katsuhiko Kawashima , Tsuyoshi Tanaka
发明人： Mitsuru Nishitsuji , Yoshiharu Anda , Katsuhiko Kawashima , Tsuyoshi Tanaka
IPC分类号： H01L218242
CPC分类号： H01L29/66863 , H01L21/28587 , H01L27/0629
摘要： First, an insulating film is formed over the entire surface of a semiconductor substrate including a channel region for a field effect transistor. The insulating film has a gate electrode opening over the channel region. Next, a protective film is deposited over the entire surface of the insulating film. Then, a lower electrode, a capacitive insulating film and an upper electrode are formed in this order in a region on the protective film where a capacitor will be formed. Subsequently, part of the protective film, with which the gate electrode opening of the insulating film has been filled in, is removed, thereby exposing the semiconductor substrate within the gate electrode opening. And then a gate electrode is formed to fill in the gate electrode opening again.
摘要翻译：首先，在包括场效应晶体管的沟道区域的半导体衬底的整个表面上形成绝缘膜。绝缘膜具有在沟道区域上开口的栅电极。接下来，在绝缘膜的整个表面上沉积保护膜。然后，在保护膜上将形成电容器的区域中，依次形成下电极，电容绝缘膜和上电极。随后，去除绝缘膜的栅电极开口已经填充的保护膜的一部分，从而使半导体衬底暴露在栅电极开口内。然后形成栅电极以再次填充栅电极开口。

2. 发明授权

US06329227B2 Method of patterning organic polymer film and method for fabricating semiconductor device 有权
公开(公告)号：US06329227B2
公开(公告)日：2001-12-11
申请号：US09789738
申请日：2001-02-22
申请人： Yoshiharu Anda , Mitsuru Nishitsuji , Katsuhiko Kawashima , Tsuyoshi Tanaka
发明人： Yoshiharu Anda , Mitsuru Nishitsuji , Katsuhiko Kawashima , Tsuyoshi Tanaka
IPC分类号： H01L2100
CPC分类号： H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/28581 , H01L21/28587 , H01L21/3081 , H01L21/3088 , H01L21/31138 , H01L21/312
摘要： An organic polymer film patterning method includes the steps of: defining a resist film on a selected area of a substrate; depositing an organic polymer film over the substrate by a plasma CVD process so that the resist film is covered with part of the organic polymer film; and removing the resist film along with the part of the organic polymer film that has covered the resist film.

3. 发明申请

US20070012949A1 Bipolar transistor and power amplifier 有权
标题翻译：双极晶体管和功率放大器
公开(公告)号：US20070012949A1
公开(公告)日：2007-01-18
申请号：US11484753
申请日：2006-07-12
申请人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
发明人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
IPC分类号： H01L31/00 , H01L21/336
CPC分类号： H01L29/7371 , H01L29/0692 , H01L29/41708 , H01L29/42304 , H01L29/66318
摘要： A base mesa finger (an emitter ledge layer 15, a base layer 16, and a collector layer 17) is interposed between two collector fingers (collector electrodes 13), and on the base mesa finger, a base finger (a base electrode 12) and two emitter fingers (an emitter layer 14 and an emitter electrode 11) on both sides of the base finger, are formed. The two emitter fingers are formed symmetric with respect to the base finger as a reference.
摘要翻译：基底台面（发射极壁缘层15，基底层16和集电体层17）介于两个集电极指（集电极13）之间，并且在基底台面上指基底指（基底电极12）并且形成在基指的两侧上的两个发射极指（发射极层14和发射极11）。两个发射极指相对于基指形成对称的基准。

4. 发明申请

US20090288862A1 Wired circuit board and producing method thereof 审中-公开
标题翻译：有线电路板及其制造方法
公开(公告)号：US20090288862A1
公开(公告)日：2009-11-26
申请号：US12453542
申请日：2009-05-14
申请人： Yasushi Tamura , Hayato Abe , Katsuhiko Kawashima
发明人： Yasushi Tamura , Hayato Abe , Katsuhiko Kawashima
IPC分类号： H05K1/09 , B05D5/12 , B32B38/00
CPC分类号： H01L23/498 , H01L23/49894 , H01L2924/0002 , H05K1/0393 , H05K1/056 , H05K3/244 , H05K3/28 , H05K3/384 , H05K2201/0394 , H05K2203/0315 , H05K2203/1105 , Y10T156/10 , H01L2924/00
摘要： A wired circuit board includes an insulating base layer, a conductive pattern formed on the insulating base layer, a tin-based thin layer formed on a surface of the conductive pattern, and containing at least tin oxide, and an insulating cover layer formed on the insulating base layer so as to cover the tin-based thin layer.
摘要翻译：布线电路板包括绝缘基底层，形成在绝缘基底层上的导电图案，形成在导电图案的表面上并至少包含氧化锡的锡基薄层，以及形成在绝缘基底层上的绝缘覆盖层绝缘基层以覆盖锡基薄层。

5. 发明授权

US07566920B2 Bipolar transistor and power amplifier 有权
标题翻译：双极晶体管和功率放大器
公开(公告)号：US07566920B2
公开(公告)日：2009-07-28
申请号：US11484753
申请日：2006-07-12
申请人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
发明人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
IPC分类号： H01L29/737
CPC分类号： H01L29/7371 , H01L29/0692 , H01L29/41708 , H01L29/42304 , H01L29/66318
摘要： A base mesa finger (an emitter ledge layer 15, a base layer 16, and a collector layer 17) is interposed between two collector fingers (collector electrodes 13), and on the base mesa finger, a base finger (a base electrode 12) and two emitter fingers (an emitter layer 14 and an emitter electrode 11) on both sides of the base finger, are formed. The two emitter fingers are formed symmetric with respect to the base finger as a reference.
摘要翻译：基底台面（发射极壁缘层15，基底层16和集电体层17）介于两个集电极指（集电极13）之间，并且在基底台面上指基底指（基底电极12）并且形成在基指的两侧上的两个发射极指（发射极层14和发射极11）。两个发射极指相对于基指形成对称的基准。

6. 发明申请

US20070229170A1 High-frequency power amplifier device 有权
标题翻译：高频功放器
公开(公告)号：US20070229170A1
公开(公告)日：2007-10-04
申请号：US11727692
申请日：2007-03-28
申请人： Masahiro Maeda , Katsuhiko Kawashima , Masatoshi Kamitani
发明人： Masahiro Maeda , Katsuhiko Kawashima , Masatoshi Kamitani
IPC分类号： H03F3/191
CPC分类号： H03F1/565
摘要： A high-frequency power amplifier device including: a power amplifier circuit which amplifies a high-frequency signal; an output matching circuit connected to an output side of the power amplifier circuit; and a high-frequency circuit connected to an output side of the output matching circuit, which is designed so that X[f] satisfies the relationship expressed as X[L]
摘要翻译：一种高频功率放大器装置，包括：放大高频信号的功率放大电路; 输出匹配电路，连接到功率放大器电路的输出侧; 以及连接到输出匹配电路的输出侧的高频电路，被设计为使得X [f]满足表示为X [L]

7. 发明申请

US20060132241A1 Transistor integrated circuit device and manufacturing method thereof 审中-公开
标题翻译：晶体管集成电路器件及其制造方法
公开(公告)号：US20060132241A1
公开(公告)日：2006-06-22
申请号：US10545786
申请日：2004-10-08
申请人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
发明人： Katsuhiko Kawashima , Masahiro Maeda , Keiichi Murayama , Hirotaka Miyamoto
IPC分类号： H03F3/191
CPC分类号： H01L27/0629 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： There are provided a transistor integrated circuit device which reduces the integrated area of a circuit while avoiding an element destruction caused by thermal runaway, and a method of manufacturing the transistor integrated circuit device. A cut capacitor (13) is composed of an upper electrode formed from a wiring metal and in a first layer; and a lower electrode formed from a wiring metal and in a second layer. A bias resistor (12) is formed from the same wiring metal as that of the lower electrode of the cut capacitor (13). This bias resistor (12) is formed from a wiring metal which is made into a thin film to function as a sheet resistor, and the resistance value of the bias resistor (12) can be freely set according to the thickness or width of the wiring metal.
摘要翻译：提供了一种晶体管集成电路器件，其减少了电路的集成面积，同时避免了由热失控引起的元件损坏，以及制造晶体管集成电路器件的方法。切断电容器（13）由由布线金属形成的上电极和第一层构成; 以及由布线金属和第二层形成的下电极。偏置电阻器（12）由与切断电容器（13）的下电极相同的布线金属形成。该偏置电阻器（12）由布线金属形成，该布线金属制成薄膜以用作片状电阻器，并且可以根据布线的厚度或宽度自由设置偏置电阻器（12）的电阻值金属。

8. 发明授权

US07554410B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US07554410B2
公开(公告)日：2009-06-30
申请号：US11822906
申请日：2007-07-11
申请人： Katsuhiko Kawashima , Masahiro Maeda , Masatoshi Kamitani
发明人： Katsuhiko Kawashima , Masahiro Maeda , Masatoshi Kamitani
IPC分类号： H03F3/04
CPC分类号： H03F3/189 , H03F1/56
摘要： A power amplifier amplifies an input signal having a fundamental frequency of which band width ranges between a first fundamental frequency F1 and a second fundamental frequency F2. The power amplifier includes a power amplifier transistor for amplifying the input signal and an output matching circuit for suppressing a harmonic component included in an output signal from the power amplifier transistor. The output matching circuit includes: a first second-order harmonic series resonant circuit including a first inductor and a first capacitor and having a frequency twice as large as F1 as a resonance frequency; and a second second-order harmonic series resonant circuit including a second inductor and a second capacitor and having a frequency twice as large as F2 as a resonance frequency.
摘要翻译：功率放大器放大具有基带频率在第一基频F1和第二基频F2之间的带宽的输入信号。功率放大器包括用于放大输入信号的功率放大器晶体管和用于抑制包括在功率放大器晶体管的输出信号中的谐波分量的输出匹配电路。输出匹配电路包括：第一二次谐波串联谐振电路，包括第一电感器和第一电容器，并且具有作为共振频率的F1的两倍的频率; 以及包括第二电感器和第二电容器并且具有作为共振频率的F2的频率两倍的频率的第二二次谐波串联谐振电路。

9. 发明授权

US07541874B2 High-frequency power amplifier device 有权
标题翻译：高频功放器
公开(公告)号：US07541874B2
公开(公告)日：2009-06-02
申请号：US11727692
申请日：2007-03-28
申请人： Masahiro Maeda , Katsuhiko Kawashima , Masatoshi Kamitani
发明人： Masahiro Maeda , Katsuhiko Kawashima , Masatoshi Kamitani
IPC分类号： H03F3/04
CPC分类号： H03F1/565
摘要： A high-frequency power amplifier device including: a power amplifier circuit which amplifies a high-frequency signal; an output matching circuit connected to an output side of the power amplifier circuit; and a high-frequency circuit connected to an output side of the output matching circuit, which is designed so that X[f] satisfies the relationship expressed as X[L]
摘要翻译：一种高频功率放大器装置，包括：放大高频信号的功率放大电路; 输出匹配电路，连接到功率放大器电路的输出侧; 以及连接到输出匹配电路的输出侧的高频电路，被设计为使得X [f]满足表示为X [L]

10. 发明授权

US07286018B2 Transistor circuit 有权
标题翻译：晶体管电路
公开(公告)号：US07286018B2
公开(公告)日：2007-10-23
申请号：US11231800
申请日：2005-09-22
申请人： Hirokazu Makihara , Kazuki Tateoka , Katsuhiko Kawashima , Shingo Matsuda
发明人： Hirokazu Makihara , Kazuki Tateoka , Katsuhiko Kawashima , Shingo Matsuda
IPC分类号： H03F3/191
CPC分类号： H03F1/302 , H03F3/191 , H03F3/195 , H03F3/211 , H03F2200/243 , H03F2200/366 , H03F2200/447 , H03F2200/451 , H03F2203/21133
摘要： The transistor circuit 1 includes a plurality of transistor cells 10 each having a transistor 11, a base ballast resistor 12, a capacitor 13, and an inductor 14. The transistors 11 have the respective collectors commonly connected to a collector terminal 1c of the transistor circuit 1 and the respective emitters commonly connected to an emitter terminal 1e thereof. Each base ballast resistor 12 is connected to bases of the transistor 11 at one end and to a base terminal 1b of the transistor circuit 1 at the other end. The capacitor 13 is serially connected to the inductor 14, thus to form a serial resonant circuit 15, which is connected in parallel with the base ballast resistor 12 and provided between the bases of the transistor 11 and the base terminal 1b of the transistor circuit 1 and connected thereto.
摘要翻译：晶体管电路1包括多个具有晶体管11，基极镇流电阻12，电容器13和电感器14的晶体管单元10。晶体管11具有共同地连接到晶体管电路1的集电极端子1c的各个集电极以及共同连接到其发射极端子1e的各个发射极。每个基极镇流电阻器12在一端连接到晶体管11的基极，在另一端连接到晶体管电路1的基极端子bb。电容器13串联连接到电感器14，从而形成串联谐振电路15，串联谐振电路15与基极镇流电阻12并联连接并设置在晶体管11的基极和晶体管电路的基极端子1b之间 1并连接到其上。

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