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1. 发明申请

US20130001651A1 SEMICONDUCTOR LIGHT DETECTING ELEMENT 有权
标题翻译：半导体光检测元件
公开(公告)号：US20130001651A1
公开(公告)日：2013-01-03
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L31/102
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

2. 发明授权

US09293499B2 Semiconductor light detecting element having silicon substrate and conductor 有权
标题翻译：具有硅衬底和导体的半导体光检测元件
公开(公告)号：US09293499B2
公开(公告)日：2016-03-22
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L27/146 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

3. 发明授权

US08598674B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08598674B2
公开(公告)日：2013-12-03
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146 , G01C3/08
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

4. 发明授权

US09081095B2 Range image sensor 有权
标题翻译：范围图像传感器
公开(公告)号：US09081095B2
公开(公告)日：2015-07-14
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： G01J1/46 , G01S7/486 , H01L27/146 , G01S17/89 , H01J1/46
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

5. 发明授权

US08653619B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08653619B2
公开(公告)日：2014-02-18
申请号：US13487514
申请日：2012-06-04
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L31/0224 , H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG. The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

6. 发明申请

US20120312966A1 RANGE IMAGE SENSOR 有权
标题翻译：范围图像传感器
公开(公告)号：US20120312966A1
公开(公告)日：2012-12-13
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

7. 发明申请

US20120181650A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20120181650A1
公开(公告)日：2012-07-19
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

8. 发明申请

US20140327903A1 DISTANCE MEASUREMENT DEVICE 有权
标题翻译：距离测量装置
公开(公告)号：US20140327903A1
公开(公告)日：2014-11-06
申请号：US14357817
申请日：2012-08-21
申请人： Mitsuhito Mase , Takashi Suzuki , Jun Hiramitsu
发明人： Mitsuhito Mase , Takashi Suzuki , Jun Hiramitsu
IPC分类号： G01S7/486
CPC分类号： G01S7/4861 , G01S7/4863 , G01S17/89
摘要： In a distance measurement device of an embodiment, a light source emits modulation light in a first charge transfer cycle, and emission of the modulation light of the light source is stopped in a second charge transfer cycle. In each of the first and second charge transfer cycles, the charges generated in a photosensitive region are distributed to a first accumulation region and a second accumulation region. A first value is obtained based on readout values corresponding to amounts of accumulated charges of the first accumulation region. A second value is obtained based on readout values corresponding to amounts of accumulated charges of the second accumulation region. A distance is calculated based on the first value and the second value.
摘要翻译：在实施例的距离测量装置中，光源在第一电荷转移周期中发射调制光，并且在第二电荷转移周期中停止光源的调制光的发射。在第一和第二电荷转移循环中的每一个中，在感光区域中产生的电荷被分配到第一累积区域和第二累积区域。基于与第一累积区域的累积电荷量对应的读出值获得第一值。基于对应于第二累积区域的累积电荷量的读出值获得第二值。基于第一值和第二值计算距离。

9. 发明授权

US08665422B2 Back-illuminated distance measuring sensor and distance measuring device 有权
标题翻译：背照式距离测量传感器和距离测量装置
公开(公告)号：US08665422B2
公开(公告)日：2014-03-04
申请号：US13585103
申请日：2012-08-14
申请人： Mitsuhito Mase , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
发明人： Mitsuhito Mase , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
IPC分类号： G01C3/08
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译：作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确距离测量启用。

10. 发明申请

US20100201966A1 BACK-ILLUMINATED DISTANCE MEASURING SENSOR AND DISTANCE MEASURING DEVICE 有权
标题翻译：后置照明距离测量传感器和距离测量装置
公开(公告)号：US20100201966A1
公开(公告)日：2010-08-12
申请号：US12666572
申请日：2008-07-02
申请人： Mitsuhito Mase , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
发明人： Mitsuhito Mase , Takashi Suzuki , Seiichiro Mizuno , Mitsutaka Takemura
IPC分类号： G01C3/08 , H01L31/12 , H01L27/146
CPC分类号： H01L27/1464 , G01S7/4863 , G01S17/10 , G01S17/89 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L2224/05001 , H01L2224/05124 , H01L2224/05568 , H01L2224/0557 , H01L2224/05624 , H01L2224/16225 , H01L2924/00014
摘要： Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d′(m,n) having the distance information. Since the respective pixels P (m,n) output signals d′(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
摘要翻译：作为具有距离信息的信号d'（m，n），从背照式距离测量传感器1的各个像素P（m，n）输出两个电荷量（Q1，Q2）。由于各个像素P（m，n）响应于到物体H的距离作为微距测量传感器输出信号d'（m，n），所以可以获得对象的距离图像作为距离信息的集合如果来自物体H的反射光成像在拾取区域1B上，物体H上的点。如果在半导体的深部产生的响应于用于投影的近红外光的入射的载流子被引导到设置在与光入射表面侧相对的载体产生位置附近的势阱中，则高速准确距离测量启用。

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