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1. 发明专利

JP2011213520A Method for manufacturing powder for thermal spray, turbine member, and gas turbine 有权
标题翻译：用于制造热喷涂粉末，涡轮部件和气体涡轮的方法
公开(公告)号：JP2011213520A
公开(公告)日：2011-10-27
申请号：JP2010081961
申请日：2010-03-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： NANBA KATSUMI , TORIGOE TAIJI , NAGANO ICHIRO , KANEKO HIDEAKI , MATSUI TAKUYA , SHIDA MASAHITO , OKADA IKUO , MORI KAZUTAKA , TSURU YASUHIKO , ITO EISAKU , OKAJIMA YOSHIFUMI
IPC分类号： C04B35/628 , C23C4/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a powder for thermal spray capable of efficiently manufacturing a powder of an optional particle size in relatively easy operation.SOLUTION: A slurry 13 formed by mixing a raw material of the powder for thermal spray, water and a dispersing agent is adjusted to have a solid concentration of 60 wt.% or higher and 86 wt.% or lower. The slurry 13 is then supplied to a disk-type atomizer 12 of a spray dryer 10, of which the rotation speed is adjusted so that the discharging velocity of the slurry 13 from the atomizer 12 is 30 m/s or higher and 110 m/s or lower. The slurry 13 is dried in the spray dryer 10 to form a powder body 22 for thermal spray, which is subjected to heat treatment to obtain the powder for thermal spray having an optional particle size distribution.
摘要翻译：要解决的问题：提供一种制造用于热喷涂的粉末的方法，其能够在相对容易的操作中有效地制造任选粒径的粉末。溶液：通过将用于热喷涂的粉末的原料混合而形成的浆料13，将水和分散剂调节至固体成分浓度为60重量％以上且86重量％以下。然后将浆料13供给到喷雾干燥器10的盘式雾化器12，其中调节转速使得来自雾化器12的浆料13的排出速度为30m / s以上且110m / s或更低。将浆料13在喷雾干燥器10中干燥，形成用于热喷涂的粉末体22，进行热处理，得到具有任意粒度分布的热喷涂用粉末。

2. 发明专利

JP2012084559A Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：JP2012084559A
公开(公告)日：2012-04-26
申请号：JP2010226840
申请日：2010-10-06
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： NAKANO SHINYA , TAKEUCHI YOSHIAKI , KONDO MICHIO , MATSUI TAKUYA
IPC分类号： H01L31/04 , H01L31/042
CPC分类号： H01L31/202 , H01L31/03762 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving electric power generation characteristics of a solar cell having a hetero junction cell composed of a p-type crystal Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer.SOLUTION: A method of manufacturing a photoelectric conversion device 100 having a hetero junction cell 1 including a stack of an i-type amorphous silicon semiconductor layer 12 and an n-type amorphous silicon semiconductor layer 13 on a substrate (p-type crystal Ge) 11 in this order comprises: a PHexposure processing step of heating the substrate 11 from which an oxide film formed on a surface is removed to a predetermined temperature, and then disposing the substrate in a vacuum chamber to expose the substrate to a PHgas; an i-layer deposition step of depositing the i-type amorphous silicon semiconductor layer 12 on the PH-exposed substrate; an n-layer deposition step of depositing the n-type amorphous silicon semiconductor layer 13 on the i-type amorphous silicon semiconductor layer 12; and an electrode formation step of forming electrodes (2, 3, and 4) on the n-type amorphous silicon semiconductor layer and on the rear surface of the substrate 11.
摘要翻译：解决的问题：提供一种能够提高具有由p型晶体Ge（基板）构成的异质结电池的太阳能电池的发电特性的i型光电转换装置的制造方法非晶硅半导体层和n型非晶硅半导体层。解决方案：一种制造具有异质结单元1的光电转换装置100的方法，该异质结单元1包括在基板上的i型非晶硅半导体层12和n型非晶硅半导体层13的堆叠（p型晶体Ge）11依次包括：将表面上形成的氧化膜除去到预定温度的基板11进行加热的PH 3 曝光处理步骤，然后将基板设置在真空室中以使基板暴露于气体; 将i型非晶硅半导体层12沉积在基底上的i层沉积步骤; 在i型非晶硅半导体层12上沉积n型非晶硅半导体层13的n层沉积步骤; 以及在n型非晶硅半导体层和衬底11的后表面上形成电极（2,3和4）的电极形成步骤。（C）2012，JPO＆INPIT

3. 发明专利

JP2010251424A Photoelectric conversion apparatus 审中-公开
标题翻译：光电转换装置
公开(公告)号：JP2010251424A
公开(公告)日：2010-11-04
申请号：JP2009097263
申请日：2009-04-13
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial Science & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： ASAKUSA KOICHI , TAKEUCHI YOSHIAKI , KUREYA MASAYUKI , MATSUI TAKUYA , KONDO MICHIO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion apparatus in which an i-layer includes a photoelectric conversion layer comprising crystalline silicon germanium, representing a high power generation characteristic in a long wavelength band. SOLUTION: The photoelectric conversion apparatus 100 includes a photoelectric conversion layer 3 in which a p-layer 41, a crystalline silicon germanium i layer 42, and an n-layer 43 are stacked, sequentially from light incident side, on a substrate 1. In the photoelectric conversion apparatus 100, the concentration of germanium in the crystalline silicon germanium i layer 42 changes in such manner as decreases stepwise when advances from the p-layer 41 side to the n-layer 43 side. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种其中i层包括表示长波长带中的高发电特性的晶体硅锗的光电转换层的光电转换装置。解决方案：光电转换装置100包括光电转换层3，其中p层41，晶体硅锗层42和n层43从光入射侧依次层叠在基板上在光电转换装置100中，结晶硅锗层42中的锗的浓度随从p层41侧向n层43侧的逐步降低而变化。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2013074038A Method of manufacturing photoelectric conversion device and photoelectric conversion device 审中-公开
标题翻译：制造光电转换器件和光电转换器件的方法
公开(公告)号：JP2013074038A
公开(公告)日：2013-04-22
申请号：JP2011211025
申请日：2011-09-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAKANO SHINYA , TAKEUCHI YOSHIAKI , KONDO MICHIO , MATSUI TAKUYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving power generation characteristics of a solar cell having a hetero junction cell composed of a p-type crystal Ge (substrate), an i-type amorphous silicon layer, and an n-type amorphous silicon layer.SOLUTION: A method of manufacturing a photoelectric conversion device includes a hetero junction cell 1 in which a p-type crystal Ge is used as a substrate 11 and an i-type amorphous silicon layer 12 and an n-type amorphous silicon layer 13 are laminated on the substrate 11 in this order. This method includes a PHexposure processing step in which the substrate 11 of the p-type crystal Ge having a Ge (111) face on the surface is used and after heating the substrate 11 from which an oxide film 5 formed on the surface is removed to a predetermined temperature, the substrate 11 is exposed to the PHgas by being disposed in a vacuum chamber.
摘要翻译：解决的问题：提供一种能够提高具有由p型晶体Ge（衬底）构成的异质结电池的太阳能电池的发电特性的i型非晶体的发光特性的制造方法，硅层和n型非晶硅层。解决方案：一种制造光电转换器件的方法包括其中使用p型晶体Ge作为衬底11的异质结电池1和i型非晶硅层12和n型非晶硅层 13依次层压在基板11上。该方法包括使用表面上具有Ge（111）面的p型晶体Ge的基板11并且在加热基板之后的PH 3 曝光处理步骤如图11所示，将形成在表面上的氧化膜5除去到预定温度，通过设置在真空室中将基板11暴露于PH 3“气体。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011103492A Photoelectric conversion device, and method of manufacturing the same 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：JP2011103492A
公开(公告)日：2011-05-26
申请号：JP2011028301
申请日：2011-02-14
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial Science & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： KUREYA MASAYUKI , KONDO MICHIO , MATSUI TAKUYA
IPC分类号： H01L31/04 , H01L21/205
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a pin-type photoelectric conversion layer using microcrystal silicon germanium for an (i) layer, and to provide a method of manufacturing the same, wherein the deterioration of a power generation characteristic accompanied by an increase in the germanium density of the (i) layer is suppressed.
SOLUTION: The present invention relates to the method of manufacturing the photoelectric conversion device, including forming the photoelectric conversion layer by forming a pin junction through: a step of forming a layer of a p-type silicon-based semiconductor; a step of forming a layer of an i-type silicon-based semiconductor; and a step of forming a layer of an n-type silicon-based semiconductor, wherein the step of forming the layer of the i-type silicon-based semiconductor is a step of forming a layer of microcrystal silicon germanium by a plasma CVD method at a filming temperature of 100 to 160°C.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有针对（i）层使用微晶硅锗的pin型光电转换层的光电转换装置，并提供其制造方法，其中发电的劣化伴随着（i）层的锗密度增加的特性被抑制。解决方案：本发明涉及制造光电转换装置的方法，包括通过以下步骤形成光电转换层：通过形成p型硅基半导体层的步骤; 形成i型硅基半导体层的步骤; 以及形成n型硅基半导体层的步骤，其中形成i型硅基半导体层的步骤是通过等离子体CVD法形成微晶硅锗层的步骤成膜温度为100〜160℃。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2005244073A Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2005244073A
公开(公告)日：2005-09-08
申请号：JP2004054348
申请日：2004-02-27
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUI TAKUYA , KONDO MICHIO , SONOBE HIROYUKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which uses a transparent conductive film as a light incident surface electrode and which obtains a high output current and high conversion efficiency by remarkably reducing the reflection loss of visible infrared light incident into an interface between a transparent conductive film and a photoelectric conversion layer. SOLUTION: The solar cell comprises a transparent conductive layer 10, a first antireflection layer 11, a second antireflection layer 12, a photoelectric conversion layer 4, and a rear surface electrode layer 5. The transparent conductive layer 10 is formed on a transparent substrate 9. The first antireflection layer 11 is formed on the transparent conductive layer 10. The second antireflection layer 12 is formed on the first antireflection layer 11. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用透明导电膜作为光入射面电极的太阳能电池，通过显着降低入射到界面中的可见红外光的反射损失，获得高输出电流和高转换效率在透明导电膜和光电转换层之间。解决方案：太阳能电池包括透明导电层10，第一抗反射层11，第二抗反射层12，光电转换层4和背面电极层5.透明导电层10形成在透明基板9.第一抗反射层11形成在透明导电层10上。第二抗反射层12形成在第一抗反射层11上。（C）2005，JPO和NCIPI

7. 发明专利

JP2004184220A Fatigue tester 审中-公开
公开(公告)号：JP2004184220A
公开(公告)日：2004-07-02
申请号：JP2002351275
申请日：2002-12-03
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TADA HIROKAZU , KANEKO HIDEAKI , MATSUI TAKUYA
IPC分类号： G01N3/34 , G01M7/02
摘要： PROBLEM TO BE SOLVED: To perform fatigue test on a plurality of test pieces at the same time with one vibration tester.
SOLUTION: When fatigue test is performed on test pieces by means of bend load by providing the test pieces 31 with vibration of a previously set vibration frequency, a plurality of support mechanisms are formed on a support body 11a supporting/fixing one end part of each test piece. For example, the support mechanisms are plurally disposed at prescribed intervals along the extending direction of the support body while being plurally disposed at predetermined angular intervals around side faces parallel to the extending direction of the support body. With test pieces different in stress conditions from each other being supported/fixed on the plurality of support mechanisms, fatigue test is performed at the same time on the plurality of test pieces by giving vibration to the support body.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2011176242A Thin-film photoelectric conversion device 审中-公开
标题翻译：薄膜光电转换装置
公开(公告)号：JP2011176242A
公开(公告)日：2011-09-08
申请号：JP2010041074
申请日：2010-02-25
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial Science & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MIZUNO KOICHI , TAKEUCHI YOSHIAKI , SAKAI TOMOTSUGU , TSURUGA SHIGENORI , MATSUI TAKUYA , KONDO MICHIO , JIA HAIJUN
IPC分类号： H01L31/04
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/076 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a three-junction type thin-film photoelectric conversion device with high efficiency which has a high haze rate and in which short-circuit current values obtained by respective photoelectric conversion layers are equalized. SOLUTION: The thin-film photoelectric conversion device 100 has a transparent electrode layer 2 and three silicon-based photoelectric conversion layers 91, 92 and 93 in order on a substrate 1. The transparent electrode layer 2 has at least one opening 5 formed through etching processing to expose a surface of the substrate 1, and the haze rate of the transparent electrode layer 2 to light in a wide wavelength range is equal to or larger than 60%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效率的具有高雾度率并且通过各个光电转换层获得的短路电流值相等的三结型薄膜光电转换装置。
解决方案：薄膜光电转换装置100在基板1上依次具有透明电极层2和三个硅基光电转换层91,92和93.透明电极层2具有至少一个开口5 通过蚀刻处理形成以露出衬底1的表面，并且透明电极层2的雾度在宽波长范围内的光等于或大于60％。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2009038064A Photoelectric conversion device, and its manufacturing method 有权
标题翻译：光电转换器件及其制造方法
公开(公告)号：JP2009038064A
公开(公告)日：2009-02-19
申请号：JP2007198490
申请日：2007-07-31
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： KUREYA MASAYUKI , KONDO MICHIO , MATSUI TAKUYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a pin type photoelectric conversion layer using microcrystal silicon germanium for an (i) layer, and a manufacturing method thereof, wherein the deterioration of a power generation characteristic accompanied by an increase in the germanium density of the (i) layer is suppressed. SOLUTION: Disclosed is the manufacturing method of the photoelectric conversion device which has the photoelectric conversion layer formed by forming a pin junction through a stage of forming a layer of a p-type silicon-based semiconductor, a stage of forming a layer of an i-type silicon-based semiconductor, and a stage of forming a layer of an n-type silicon-based semiconductor, wherein the stage of forming the layer of the i-type silicon-based semiconductor is a stage of forming a layer of microcrystal silicon germanium containing ≥50% by atom of germanium by a plasma CVD method at a filming temperature of 100 to 250°C. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种具有针对（i）层使用微晶硅锗的针式光电转换层的光电转换装置及其制造方法，其中伴随着增加的发电特性的劣化在（i）层的锗密度被抑制。解决方案：公开了具有通过在形成p型硅基半导体层的阶段形成pin结而形成的光电转换层的光电转换装置的制造方法，形成层的i型硅系半导体层和形成n型硅系半导体层的阶段，其中形成i型硅系半导体层的阶段是形成层的阶段通过等离子体CVD法在100〜250℃的成膜温度下含有≥50％的锗原子的微晶硅锗。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2005259853A Thin-film forming device, photoelectric converter and thin-film manufacturing method 有权
标题翻译：薄膜成型装置，光电转换器和薄膜制造方法
公开(公告)号：JP2005259853A
公开(公告)日：2005-09-22
申请号：JP2004067009
申请日：2004-03-10
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： KUREYA MASAYUKI , YAMASHITA NOBUKI , YONEKURA YOSHIMICHI , KONDO MICHIO , MATSUI TAKUYA
IPC分类号： C23C16/509 , H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a thin-film forming device that can manufacture more high-quality thin film efficiently, a photoelectric converter that is manufactured by the thin-film forming device, and a thin-film manufacturing method by which more high-quality thin film can be efficiently manufactured. SOLUTION: A plasma CVD device uses a ladder-like electrode 13 as an electrode to generate plasma for decomposing a deposition gas. The ladder-lie electrode 13 is arranged at a position where it is nearly parallel to a substrate K, not being in contact therewith, and a distance between the substrate K and itself is 10 mm or less, at least during deposition. COPYRIGHT: (C)2005,JPO&NCIPI

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