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    • 2. 发明专利
    • Method for producing metallic film and apparatus for producing metallic film
    • 用于制造金属膜的方法和用于生产金属膜的装置
    • JP2003328128A
    • 2003-11-19
    • JP2002229413
    • 2002-08-07
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • SAKAMOTO HITOSHITONEGAWA YUTAKAKOSHIRO YASUMASAOGURA KENOBA YOSHIYUKINISHIMORI TOSHIHIKOHACHIMAN NAOKI
    • C23C16/08C23C16/14C23C16/50C23C16/505H01L21/285
    • PROBLEM TO BE SOLVED: To provide an apparatus for producing a metallic film by which film deposition reaction can be promoted in the production of a metallic film by which a film deposition rate is accelerated, inexpensive raw materials can be used, and impurities in a film can be reduced as possible. SOLUTION: The temperatures of a steel sheet member 7 and a substrate 3 and a temperature difference therebetween are controlled in accordance with the prescribed ones, so that the copper sheet member 7 is subjected to etching with gaseous Cl 2 plasma in a chamber 1 to form a precursor of a Cu component and gaseous Cl 2 . The Cu component in the precursor is precipitated over the substrate 3, so that film deposition of Cu is carried out. In this case, Cl* is formed in an excitation chamber 25 of a passage 24 communicating with the inside of the chamber 1 and circulating the gaseous Cl 2 . The Cl* is fed into the chamber 1, so that the gaseous Cl 2 is discharged from the precursor adsorbed on the substrate 3 to promote the film deposition reaction of the Cu film. COPYRIGHT: (C)2004,JPO
    • 解决的问题:提供一种用于制造金属膜的装置,通过该金属膜的制造,可以促进在成膜速度加快的金属膜的制造中进行成膜反应,可以使用廉价的原料,并且可以使用杂质 在电影中可以尽可能地减少。 解决方案:根据规定的方式控制钢板构件7和基板3的温度及其温度差,使得铜板构件7用气态Cl 2进行蚀刻, / SB>等离子体,以形成Cu组分的前体和气态Cl 2 SBB。 前体中的Cu成分沉积在基板3上,从而进行Cu的沉积。 在这种情况下,Cl *形成在通道24的激发室25中,该通道24与室1的内部连通并使气态Cl 2 SBB循环。 将Cl *送入室1中,从而吸附在基板3上的前体排出气态Cl 2 SB以促进Cu膜的膜沉积反应。 版权所有(C)2004,JPO
    • 5. 发明专利
    • Method for evaluating grain boundary corrosion sensitivity
    • 评估颗粒边界腐蚀敏感性的方法
    • JP2003050196A
    • 2003-02-21
    • JP2001237375
    • 2001-08-06
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • KOSHIRO YASUMASAKAWAKAMI TETSUJI
    • G01B11/06G01N17/00
    • PROBLEM TO BE SOLVED: To provide a method for easily evaluating grain boundary corrosion sensitivity in stainless steel in its environment, without performing long-time dipping tests.
      SOLUTION: An evaluation method of grain boundary corrosion sensitivity includes a surface-polishing process for polishing the measurement surface of stainless steel, a potential stabilization process for installing the stainless steel in a liquid phase cell under nearly the same conditions as specific usage environment, providing an electrode in each cell, and then stabilizing potential within 10 minutes to 5 hours, a film thickness calculation process for measuring reflected light to incidence light by microscope ellipsometry, having a resolution of up to 20 μm using a CCD camera, and calculating the film thickness in a grain boundary film and a film in a grain formed on the surface of the stainless steel, and a sensitivity evaluation process for changing potential at least two times, then repeating the film thickness calculation process for a total of at least three times, and then plotting the film thickness in the grain boundary and inside the grain with respect to the potential change.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种容易评估不锈钢环境中的晶界腐蚀敏感性的方法,而不进行长时间浸渍试验。 解决方案:晶界腐蚀敏感性的评估方法包括用于抛光不锈钢测量表面的表面抛光工艺,在与特定使用环境几乎相同的条件下将不锈钢安装在液相电池中的电势稳定过程,提供 每个电池中的电极,然后在10分钟至5小时内稳定电位,使用CCD照相机通过显微镜椭偏仪测量反射光到入射光的膜厚度计算过程,并且使用CCD照相机分辨率高达20μm,并计算膜 晶界膜中的厚度和形成在不锈钢表面上的晶粒中的膜,以及用于将电位变化至少两次的灵敏度评估过程,然后重复膜厚计算处理总共至少三次, 然后相对于电位c在晶界内和晶粒内绘制薄膜厚度 改变
    • 7. 发明专利
    • Method and apparatus for forming metal film
    • 用于形成金属膜的方法和装置
    • JP2005320634A
    • 2005-11-17
    • JP2005208413
    • 2005-07-19
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • SAKAMOTO HITOSHITONEGAWA YUTAKAKOSHIRO YASUMASAOGURA KENOBA YOSHIYUKINISHIMORI TOSHIHIKOHACHIMAN NAOKI
    • C23C16/14C23C16/448C23C16/505H01L21/285
    • PROBLEM TO BE SOLVED: To provide a metal film forming apparatus by which the film formation reaction for forming a metal film is promoted so that a high film formation speed is attained, inexpensive raw materials are used and the mount of impurities remaining in the film can be reduced as much as possible.
      SOLUTION: A compound metal plate member 101 is etched with Cl
      2 gas plasma in a chamber 1 to form a precursor of a compound metal component and Cl
      2 gas by controlling the temperature of the compound metal plate member 101 and a substrate 3 and the differential temperature therebetween in a predetermined manner, and the compound metal component of the precursor is deposited on the substrate 3 to form a film of compound metals. Cl free radical is formed in an excitation chamber 25 of a passage 24 to circulate Cl
      2 gas in a communication manner in the chamber 1, Cl
      2 gas is extracted from the precursor adsorbed on to the substrate 3 to promote the film deposition reaction of the compound metal film. By supplying Cl free radical into the chamber 1, Cl
      2 gas is withdrawn from the precursor adsorbed onto the substrate 3 to promote the film formation reaction of the compound metal film.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种金属膜形成装置,通过该金属膜形成装置促进形成金属膜的成膜反应,从而获得高的成膜速度,使用廉价的原料,并且残留的杂质的载体 可以尽可能地减少电影。 解决方案:在室1中用Cl 2气体等离子体蚀刻复合金属板构件101,以通过以下方式形成复合金属成分的前体和Cl 2 气体 以预定的方式控制复合金属板构件101和基板3的温度及其间的差分温度,并将前体的复合金属成分沉积在基板3上以形成复合金属膜。 在通道24的激发室25中形成Cl自由基,以在室1中以连通方式循环Cl 2 SB 2气体,从前体中提取气体 吸附到基板3上以促进复合金属膜的膜沉积反应。 通过将C1自由基供应到室1中,从吸附到基板3上的前体中取出Cl 2气体,以促进复合金属膜的成膜反应。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • Method and apparatus for production of metal film
    • 用于生产金属膜的方法和装置
    • JP2005307355A
    • 2005-11-04
    • JP2005208410
    • 2005-07-19
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • SAKAMOTO HITOSHITONEGAWA YUTAKAKOSHIRO YASUMASAOGURA KENOBA YOSHIYUKINISHIMORI TOSHIHIKOHACHIMAN NAOKI
    • C23C16/08
    • PROBLEM TO BE SOLVED: To provide a metal film production apparatus which has a high film formation speed, can use an inexpensive starting material, and promotes film formation reaction in formation of the metal film capable of minimizing impurities in the film. SOLUTION: A method for producing metal film comprises controlling the temperatures of a copper plate member 7 and a substrate and a difference between these temperatures as predetermined and etching the copper plate member 7 with a Cl 2 gas plasma within a chamber 1 to form a precursor comprising a Cu component and a Cl 2 gas; and to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this instance, Cl* is formed in an excitation chamber 25 of a passage communicating with the interior of the chamber 1 to flow the Cl 2 gas, and the Cl* is supplied into the chamber 1 to withdraw the Cl 2 gas from the precursor adsorbed onto the substrate, thereby promoting the Cu film formation reaction. COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决问题:为了提供成膜速度快的金属膜制造装置,可以使用廉价的起始材料,并且能够在形成能够最小化膜中的杂质的金属膜的情况下促进成膜反应。 解决方案:一种制造金属膜的方法包括如预定的那样控制铜板构件7和基板的温度以及这些温度之间的差异,并用Cl 2 蚀刻铜板构件7, 在室1内的气体等离子体,以形成包含Cu组分和Cl 2 SB 2气体的前体; 并将前体的Cu成分沉积在基板上,由此形成Cu膜。 在这种情况下,Cl *形成在与室1内部连通的通道的激励室25中,以使Cl 2 气体流动,并将Cl *供应到室1中以提取 来自吸附在基底上的前体的Cl 2 气体,从而促进Cu膜形成反应。 版权所有(C)2006,JPO&NCIPI
    • 10. 发明专利
    • Method for evaluating pitting sensitivity
    • 评估感光度的方法
    • JP2003329571A
    • 2003-11-19
    • JP2002134873
    • 2002-05-10
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • KOSHIRO YASUMASATSURUTA TAKAOKAWAKAMI TETSUJIYOSHIYAMA TAKASHI
    • G01N17/00
    • PROBLEM TO BE SOLVED: To provide a method for evaluating pitting sensitivity that easily evaluates the pitting sensitivity in a short time and enables the cost reduction and the shortening of an evaluation time.
      SOLUTION: The method for evaluating the pitting sensitivity on stainless steel includes a dipping process that generates at least two or more test pieces of the stainless steel with polished measurement surfaces, and individually dips the test pieces into liquids with different concentrations of chlorine ions, a process for the measuring film thickness that measures reflection light to incident light by a microscopic ellipsometry with a CCD camera on films formed on the surfaces of the test pieces after the dipping process, and a sensitivity evaluating process for plotting a correlation between the film thickness obtained in the process for measuring the film thickness and the concentrations of the chlorine ions on dipping the test pieces into.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种用于评估点蚀灵敏度的方法,其可以在短时间内容易地评价点腐蚀性,并且能够降低成本并缩短评价时间。

      解决方案:用于评估不锈钢点蚀敏感性的方法包括浸渍过程,其产生具有抛光测量表面的不锈钢的至少两个或更多个试件,并单独将试样浸入具有不同浓度氯的液体中 离子,用于通过用CCD照相机的微观椭偏仪测量反射光到入射光的测量膜厚度的方法在浸渍过程之后在测试片的表面上形成的膜上,以及用于绘制浸渍过程之间的相关性的灵敏度评估过程 在测量薄膜厚度的过程中获得的薄膜厚度以及浸入测试片中的氯离子的浓度。 版权所有(C)2004,JPO