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1. 发明专利

JP2006002197A Method and apparatus for preparing metallic film, and apparatus for preparing layered film 有权
标题翻译：制备金属膜的方法和装置，以及制备薄膜的装置
公开(公告)号：JP2006002197A
公开(公告)日：2006-01-05
申请号：JP2004178117
申请日：2004-06-16
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OBA YOSHIYUKI , SAKAMOTO HITOSHI , TONEGAWA YUTAKA , OGURA KEN , HACHIMAN NAOKI
IPC分类号： C23C16/06 , C23C16/24 , C23C16/28 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for preparing a metallic film, which forms the film at a high speed without damaging a substrate; an apparatus therefor; and an apparatus for preparing a layered film.
SOLUTION: The method for preparing the metallic film comprises the steps of: placing a substrate 3 in a chamber 1 in which a pressure can be controlled; supplying a halogen-based source gas containing B or Si onto a member 10 to be etched from above, which is arranged in the chamber 1 and is made of a 3d transition metal, and at the same time forming the plasma 19 of a source gas to form free radicals of a halogen element; producing a precursor 20 containing the 3d transition metal included in the member 10, by etching the member 10 with the free radicals of the halogen element; and forming the film of the precursor 20 on the substrate 3 which has been controlled to a lower temperature than that of the member 10, and reducing the film-formed precursor 20 with the free radicals of the halogen element, to prepare the metallic film of the 3d transition metal or the 3d transition metal containing B or Si, on the substrate 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制备金属膜的方法，该方法在不损坏基材的情况下高速形成膜; 一种装置; 以及制备层状膜的装置。解决方案：制备金属膜的方法包括以下步骤：将基底3放置在可以控制压力的腔室1中; 将含有B或Si的卤素源气体从上方供给到要被蚀刻的构件10上，该构件设置在室1中并由3d过渡金属制成，同时形成源气体的等离子体19 以形成卤素元素的自由基; 通过用卤素元素的自由基蚀刻构件10，制造包含构件10中包含的3d过渡金属的前体20; 在基板3上形成前体20的膜，将其控制在比构件10的温度低的温度下，用卤素元素的自由基还原成膜前体20，制作金属膜在底物3上含有B或Si的3d过渡金属或3d过渡金属。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006009106A Surface treatment apparatus, thin film forming apparatus, surface treatment method and method for forming thin film 有权
标题翻译：表面处理装置，薄膜成型装置，表面处理方法和形成薄膜的方法
公开(公告)号：JP2006009106A
公开(公告)日：2006-01-12
申请号：JP2004189235
申请日：2004-06-28
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OBA YOSHIYUKI , SAKAMOTO HITOSHI , OGURA KEN , HACHIMAN NAOKI
IPC分类号： C23C16/02 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming apparatus which eliminates influences of Cl without carrying out a post treatment process and which prevents formation of an impurity layer or the like.
SOLUTION: After a Cu thin film is formed, supply of Cl
2 gas 21 is stopped as well as Ar gas 22 is supplied through a gas nozzle 18 to generate Ar
* so as to substitute Ar
* for Cl
* remaining after the film of a Cu component is formed on a substrate 3. Thereby, formation of a contaminated layer of particles due to re-reaction of residual Cl
* is suppressed, the surface of the Cu layer is kept clean and the surface of a member 11 to be etched is kept clean.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种消除C1的影响而不进行后处理工艺并且防止杂质层等的形成的薄膜形成装置。解决方案：在形成Cu薄膜之后，停止供应Cl 2 气体21，并且Ar气体22通过气体喷嘴18供给以产生Ar SP>，以便在基板3上形成Cu成分的膜之后，替代残留的Cl * 的Ar * 。由此，形成颗粒污染层残留Cl * 的反应被抑制，Cu层的表面保持清洁，并且要蚀刻的构件11的表面保持清洁。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005187922A Apparatus and method for forming metallic film 有权
标题翻译：用于形成金属膜的装置和方法
公开(公告)号：JP2005187922A
公开(公告)日：2005-07-14
申请号：JP2003434004
申请日：2003-12-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OGURA KEN , OBA YOSHIYUKI , HACHIMAN NAOKI , SAKAMOTO HITOSHI
IPC分类号： C23C16/14 , C23C16/08 , C23C16/507 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for forming a metallic film of high quality at a low temperature and simplifying a reaction material used for forming the metallic film, and to provide a method for forming the metallic film therefor.
SOLUTION: This film-forming method comprises generating unstable low-valency titanium chloride of a precursor 15 and chlorine radicals, by supplying an electric power to a plasma antenna 27 concurrently with introducing titanium tetrachloride gas 18 into an evacuated chamber 1, then making a substrate 3 adsorb the precursor 15 by adjusting a temperature controlling means 6, and reducing the precursor 15 adsorbed onto the substrate with the chlorine radicals.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种在低温下形成高质量的金属膜的装置，并且简化了用于形成金属膜的反应材料，并提供了形成金属膜的方法。解决方案：该成膜方法包括通过向等离子体天线27提供电力同时将四氯化钛气体18引入真空室1中，产生前体15和氯自由基的不稳定低价氯化钛，然后使基板3通过调节温度控制装置6吸附前体15，并且用氯自由基还原吸附在基板上的前体15。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004083946A Method for depositing metallic film and apparatus for depositing metallic film 有权
公开(公告)号：JP2004083946A
公开(公告)日：2004-03-18
申请号：JP2002243249
申请日：2002-08-23
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OGURA KEN , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI
IPC分类号： C23C16/08 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To perform high-quality deposition without making the scale of an apparatus greater even when gaseous raw materials of a high concentration are supplied in order to improve deposition efficiency. SOLUTION: The prescribed deposition is performed by feeding electricity to an annular pipe 10, to which the gaseous raw materials are supplied, by forming an auxiliary gaseous raw material plasma dissociating part of a precursor 23 in the space above the portion near a substrate in this portion, and drawing a Cl component out of the precursor 23 adsorbed on the substrate 3 by the auxiliary gaseous raw material plasma, thereby depositing the Cu component of the precursor 23 onto the substrate 3. Even when the gaseous raw materials of the high concentration are supplied in order to improve the deposition efficiency, the high-quality deposition is performed without making the scale of the apparatus greater. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003328127A Metallic film forming method and device 有权
标题翻译：金属膜形成方法和装置
公开(公告)号：JP2003328127A
公开(公告)日：2003-11-19
申请号：JP2002132409
申请日：2002-05-08
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , MATSUDA RYUICHI , HACHIMAN NAOKI
IPC分类号： C23C16/06 , C23C16/14 , C23C16/50 , C23C16/505 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a metallic film forming method for forming a high quality film, even if a high density gaseous starting material is supplied to improve film forming efficiency. SOLUTION: Temperatures of a copper plate member 7 to be etched and a substrate 3, and temperature difference between them are controlled to prescribed respective temperatures and temperature difference, thereby etching the copper plate member 7 with the Cl 2 gas plasma in a chamber 1 to form a precursor 15 containing Cu. While this precursor 15 is adsorbed on the substrate 3, a high frequency electric power is supplied to an auxiliary antenna 17, so that a part of the precursor 15 is dissociated in the proximity of the substrate 3 to form Cl*. With this Cl 2 , Cl is abstracted from the CuCl adsorbed on the substrate 3, thereby accelerating a prescribed film-forming reaction in which Cu component is precipitated on the substrate 3. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：即使提供高密度气态原料以提高成膜效率，提供一种形成高质量薄膜的金属成膜方法。解决方案：要蚀刻的铜板构件7和基板3的温度以及它们之间的温度差被控制为规定的各自的温度和温度差，从而用Cl 2蚀刻铜板构件7， / SB>气体等离子体，以形成含有Cu的前体15。当该前体15被吸附在基板3上时，将高频电力供给到辅助天线17，使得前体15的一部分在基板3附近解离以形成Cl *。使用该Cl 2 ，从吸附在基板3上的CuCl中抽出Cl，从而加速在基板3上析出Cu成分的规定的成膜反应。版权所有（C））2004，JPO

6. 发明专利

JP2005240187A Device and method for producing metallic film 有权
标题翻译：用于生产金属膜的装置和方法
公开(公告)号：JP2005240187A
公开(公告)日：2005-09-08
申请号：JP2005133961
申请日：2005-05-02
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , MATSUDA RYUICHI , HACHIMAN NAOKI
IPC分类号： C23C16/14 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a device for producing a metallic film in which the film deposition speed is high, an inexpensive material can be used, and no impurities remain in the film, and a method for producing the metallic film.
SOLUTION: A gaseous starting material is fed into a chamber 1 from a nozzle 12, electromagnetic wave is made incident in the chamber 1 from a plasma antenna 9, and an etching reaction is generated on a copper plate member 7 with Cl
2 gas plasma 14 to generate a precursor (CuxCly) 15. The precursor (CuxCly) 15 to be conveyed to a substrate 3 which is controlled at a temperature lower than that of the copper plate member 7 is turned into only Cu ions by a reducing reaction and made impinge onto the substrate 3. A Cu thin film 16 is generated on the surface of the substrate 3. The Cu thin film 16 whose deposition speed is high, whose cost is considerably reduced, and whose quality is high is generated.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种薄膜沉积速度高的金属膜的制造装置，可以使用廉价的材料，并且不会在膜中残留杂质，以及金属膜的制造方法。解决方案：气体原料从喷嘴12进入腔室1，电磁波从等离子体天线9入射到腔室1中，并且在铜板构件7上产生蚀刻反应， SB> 2 气体等离子体14以产生前体（CuxCly）15.将被输送到基板3的前体（CuxCly）15被控制在低于铜板部件7的温度的温度下变成仅通过还原反应产生Cu离子并撞击到基板3上。在基板3的表面上产生Cu薄膜16.沉积速度高，成本大大降低的Cu薄膜16及其质量产生高。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004083947A Apparatus for forming metallic film 有权
公开(公告)号：JP2004083947A
公开(公告)日：2004-03-18
申请号：JP2002243256
申请日：2002-08-23
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OGURA KEN , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI
IPC分类号： C23C16/14 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for forming metallic films, in which the exchange of members to be etched is facilitated. SOLUTION: The member 18 to be etched is attached to a ceiling board 7 to establish the circumstance of not affecting the structure of a chamber 1 and the member 18 is exchanged without disassembling the chamber 1 which is the structure by removing the ceiling board 7, by which the labor and time for maintenance are drastically reduced and the apparatus for manufacturing the metallic films constituted to facilitate the exchanging of the member 18 is provided. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2004083944A Method for manufacturing metallic film and apparatus for manufacturing metallic film 有权
公开(公告)号：JP2004083944A
公开(公告)日：2004-03-18
申请号：JP2002243232
申请日：2002-08-23
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OGURA KEN , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI
IPC分类号： C23C16/08 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing metallic films capable of depositing the metallic films having excellent adhesion properties and embedding properties and an apparatus for manufacturing the metallic films. SOLUTION: The thin Cu film 16 is deposited on a substrate 3 by etching a copper plate member 7 by the plasma generated in a chamber 1 by a plasma antenna 9 and by making the temperature of the substrate 3 lower than the temperature of the member 7 by a temperature control means 6. At this time, the member 7 is first halogenated by the gaseous raw materials containing halogen supplied from a nozzle 12 and the halogenated member 7 is etched by the rare gaseous plasma formed by making the rare gas supplied from the nozzle 19 into the plasma, thereby forming the first metallic film. Next, the member 7 is etched by the halogen gaseous plasma formed by changing the gaseous raw materials supplied from the nozzle 12 into the plasma gas to form the precursor 15 and thereafter the second metallic film consisting of the Cu component of the precursor 15 is deposited on the first metallic film, thereby forming the thin Cu film 16. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2004027352A Apparatus for making metallic film and method for making metallic film 有权
公开(公告)号：JP2004027352A
公开(公告)日：2004-01-29
申请号：JP2002240344
申请日：2002-08-21
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OGURA KEN , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI
IPC分类号： C23C16/08 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To make a metallic film which is high in a deposition rate, permits the use of inexpensive raw materials and does not allow impurities to remain in the film. SOLUTION: Gaseous Ar is supplied into a chamber 1 provided with a CuCl plate member 7 and the gaseous Ar plasma is generated to etch the member 7, by which the leaving species of CuCl included in the member 7 are formed. Further, the dissociation species of Cu and Cl are formed by the gaseous Ar plasma from the leaving species of the CuCl. The temperature on the substrate 3 side is then made to be lower than the temperature of the member 7 and a thin Cu film 16 is deposited on a substrate 3 by direct reduction. The inexpensive raw material having high deposition rate can be used and the metallic film which does not allow the impurities to remain in the film is made. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003328135A Apparatus for producing metallic film and method for producing metallic film 有权
标题翻译：用于生产金属膜的装置和用于生产金属膜的方法
公开(公告)号：JP2003328135A
公开(公告)日：2003-11-19
申请号：JP2002132424
申请日：2002-05-08
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SAKAMOTO HITOSHI , OBA YOSHIYUKI , NISHIMORI TOSHIHIKO , HACHIMAN NAOKI
IPC分类号： C23C16/448 , C23C16/52 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To eliminate stagnation in the flow of gas, to improve film quality and a film deposition rate, and to suppress the formation of particles. SOLUTION: A gaseous starting material is fed from a gas ring 12 arranged around a supporting stand 2. Only a precursor (Cu x Cl y ) 15 and excitation chlorine are allowed to exist on the surface of a substrate 3, and gas which does not participate in reaction and etching products are exhausted from an exhaust port 21 on the upper part, so that stagnation in the flow of gas is eliminated, and the stagnation of residual Cl molecules is suppressed to deposit a Cu thin film 16. The failure, e.g. that the residual Cl molecules and the Cu thin film 16 are reacted to reduce the film quality is eliminated, so that the film deposition rate is improved, and the formation of particles caused by film deposition materials onto the chamber 1 is suppressed. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了消除气体流动中的停滞，提高膜质量和膜沉积速率，并抑制颗粒的形成。解决方案：气体原料从设置在支撑架2周围的气体环12进料。只有前体（Cu）与激发氯（CH 3）被允许存在于基板3的表面上，并且不参与反应和蚀刻产物的气体从上部的排气口21排出，从而消除气体流中的停滞，并且停止残留的Cl分子被抑制沉积Cu薄膜16 残留的Cl分子和Cu薄膜16反应以降低膜质量，从而提高了膜沉积速率，并且抑制了由膜沉积材料引起到室1上的颗粒的形成。版权所有（C）2004，JPO

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