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1. 发明专利

JP2014060334A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014060334A
公开(公告)日：2014-04-03
申请号：JP2012205733
申请日：2012-09-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MITSUI TAKAO , ISHIZAKI MITSUNORI , MURAI JUNICHI
IPC分类号： H01L23/29 , H01L23/473 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/37 , H01L2224/37124 , H01L2224/37147 , H01L2224/40 , H01L2224/40095 , H01L2224/40137 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/8484 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can efficiently radiate heat generated inside the semiconductor device.SOLUTION: A semiconductor device comprises: first and second wiring members 8, 9 which are joined with each other to form a junction part A; and an encapsulation insulator 10 which covers a semiconductor element 2, the first wiring member 8 and the junction part A and exposes a part of the second wiring member 9. The first wiring member 8 includes a heat radiation part 8a formed to extend from the junction part A to the inside of the encapsulation insulator 10.
摘要翻译：要解决的问题：提供一种可以有效地辐射半导体器件内部产生的热的半导体器件。解决方案：半导体器件包括：第一和第二布线构件8,9，它们彼此接合以形成接合部分A; 以及覆盖半导体元件2，第一布线构件8和接合部A并且暴露第二布线构件9的一部分的封装绝缘体10.第一布线构件8包括形成为从接合部延伸的散热部8a 部分A到封装绝缘体10的内部。

2. 发明专利

JP2013055278A Power semiconductor switch and power conversion device 有权
标题翻译：功率半导体开关和功率转换器件
公开(公告)号：JP2013055278A
公开(公告)日：2013-03-21
申请号：JP2011193672
申请日：2011-09-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MITSUI TAKAO , IKEDA MATAHIKO , NAKAJIMA YASUSHI , KOBAYASHI MASARU , MORITAKE NAOKI
IPC分类号： H01L25/07 , H01L25/18 , H01L27/04 , H01L29/78
CPC分类号： H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/01047 , H01L2924/12032 , H01L2924/13091 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/2076
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor switch capable of reducing ringing noise without damaging a high frequency and a low loss, and a power conversion device using the power semiconductor switch.SOLUTION: A power semiconductor switch 3 for use to perform complementary switching operation in a power conversion device 15 comprises: an FET 1; and a reflux diode 2 connected in reverse parallel to the FET 1 and composed of a wideband gap semiconductor material. As compared to the electric resistance of a circuit member from first connection wiring Ls with the power conversion device 15 via the FET1 to second connection wiring Ld of the power conversion device 15, the electric resistance of a circuit member from the first connection wiring Ls via the reflux diode 2 to the second connection wiring Ld of the power conversion device 15 is configured to be greater.
摘要翻译：解决的问题：提供能够降低振铃噪声而不损害高频和低损耗的功率半导体开关，以及使用该功率半导体开关的功率转换装置。解决方案：用于在功率转换装置15中执行互补开关操作的功率半导体开关3包括：FET 1; 以及与FET1反向并联连接并由宽带隙半导体材料构成的回流二极管2。与从电力转换装置15经由FET1到电力转换装置15的第二连接配线Ld的第一连接配线Ls的电路的电阻相比，电路部件从第一连接配线Ls经由到电力转换装置15的第二连接布线Ld的回流二极管2被配置为更大。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013013220A Power conversion device 有权
标题翻译：电源转换器件
公开(公告)号：JP2013013220A
公开(公告)日：2013-01-17
申请号：JP2011143913
申请日：2011-06-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKEDA MATAHIKO , KOBAYASHI MASARU , MORITAKE NAOKI , MITSUI TAKAO , MAEKAWA HIROTOSHI , ISHIBASHI SEIJI , IDENOUE SHINSUKE
IPC分类号： H02M7/48 , H02M1/00 , H02M1/08 , H02M3/155
CPC分类号： H02M7/5387 , H01L2224/32225 , H02M3/156 , H02M3/3376 , H02M2001/0009 , H02M2001/327
摘要： PROBLEM TO BE SOLVED: To provide an improved power conversion device that implements a higher maximum output power by reducing heat generation of FETs constituting the power conversion device.SOLUTION: A power conversion device 10 that has one set of two semiconductor switches S1a, S1b comprising FET1a, FET1b and freewheeling diodes D1a, D1b in antiparallel connection to FET1a, FET1b and capable of switching action, and a smoothing capacitor C1 and that performs power conversion by complementary switching action of FET1a, FET1b of the semiconductor switches S1a, S1b includes: a current sensor CS1 for detecting a direction of current flowing through the semiconductor switches S1a, S1b; and a gate generation section 11 for decimating an on signal of a PWM gate signal to the semiconductor switches S1a, S1b when the direction of current flowing through the semiconductor switches S1a, S1b is negative.
摘要翻译：要解决的问题：提供一种改进的电力转换装置，其通过减少构成电力转换装置的FET的发热来实现更高的最大输出功率。解决方案：具有一组两个半导体开关S1a，S1b的电源转换装置10，其包括与FET1a，FET1b并联连接并能够切换动作的FET1a，FET1b和续流二极管D1a，D1b，以及平滑电容器C1和通过FET1a的互补开关动作进行功率转换，半导体开关S1a，S1b的FET1b包括：电流传感器CS1，用于检测流过半导体开关S1a，S1b的电流方向; 以及栅极产生部分11，用于当半导体开关S1a，S1b的电流方向为负时将半导体开关S1a，S1b的PWM门信号的导通信号抽取。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012129241A Magnetic component and manufacturing method of the same 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：JP2012129241A
公开(公告)日：2012-07-05
申请号：JP2010276972
申请日：2010-12-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKEDA MATAHIKO , KOBAYASHI MASARU , ISHII RYUICHI , MORITAKE NAOKI , MITSUI TAKAO , MAEKAWA HIROTOSHI
IPC分类号： H01F27/30 , H01F27/255 , H01F41/04
摘要： PROBLEM TO BE SOLVED: To obtain a small magnetic component which achieves short assembly time and excellent heat radiation.SOLUTION: A magnetic component (100) includes: a soft magnetic core having a frame core (11a), which has four surface wall parts, has an opening having a rectangular shape cross section, and is made of a soft magnetic material, and a winding core (11b) made of the soft magnetic material and around which a coil having electrodes at both ends is wound; and a metal case (14) which opens at an upper surface. The frame core is disposed in the metal case so that the opening of the frame core is placed on an upper surface. The winding core around which the coil (13) is wound is disposed in the frame core, and a potting resin fills the interior of the metal case, the interior of the frame core, and the exterior of the winding core.
摘要翻译：要解决的问题：获得组装时间短，散热性好的小型磁性部件。解决方案：磁性部件（100）包括：具有框架芯（11a）的软磁芯，其具有四个表面壁部分，具有矩形截面的开口，并且由软磁性材料制成和由软磁性材料制成的卷绕芯部（11b），并且缠绕在两端具有电极的线圈; 和在上表面开口的金属外壳（14）。框架芯设置在金属壳体中，使得框架芯的开口被放置在上表面上。缠绕线圈（13）的绕线芯设置在框架芯中，并且灌封树脂填充金属壳体的内部，框架芯部的内部和卷芯的外部。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011061900A Dc/dc power converter 有权
标题翻译： DC / DC电源转换器
公开(公告)号：JP2011061900A
公开(公告)日：2011-03-24
申请号：JP2009206048
申请日：2009-09-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKEDA MATAHIKO , KOBAYASHI MASARU , MAEKAWA HIROTOSHI , URAKABE TAKAHIRO , OKUDA TATSUYA , MITSUI TAKAO , MORITAKE NAOKI
IPC分类号： H02M3/07
摘要： PROBLEM TO BE SOLVED: To provide a DC/DC power converter having a compact energy-migration capacitor, and steadily reducing a switching loss.
SOLUTION: The DC/DC power converter uses the energy-migration capacitor and an inductor, utilizes charging and discharging of the energy-migration capacitor to perform DC/DC conversion, and includes a means of detecting or calculating a ripple voltage of the energy-migration capacitor and a means of adjusting a switching frequency of a semiconductor switching element according to the detected or calculated ripple voltage.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供具有小型能量迁移电容器的DC / DC电力转换器，并且稳定地降低开关损耗。解决方案：DC / DC电源转换器使用能量迁移电容器和电感器，利用能量迁移电容器的充电和放电进行DC / DC转换，并且包括检测或计算纹波电压的手段能量迁移电容器和根据检测或计算的纹波电压来调节半导体开关元件的开关频率的装置。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010251487A Circuit device, and method of manufacturing the circuit device 有权
标题翻译：电路装置以及制造电路装置的方法
公开(公告)号：JP2010251487A
公开(公告)日：2010-11-04
申请号：JP2009098584
申请日：2009-04-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MITSUI TAKAO , KIKUCHI MASAO , HAYASHI RYOHEI , ISHII RYUICHI
IPC分类号： H05K1/18 , H05K3/28 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To obtain a circuit device which packages a plurality of electronic components in proximity on a circuit board, and also has superior junction reliability between a lead terminal of the electronic component and a through-hole of the circuit board.
SOLUTION: The circuit device includes: a guide member provided with a recessed guide mechanism having an opening and a positioning hole forming part having a positioning hole; an electronic component in which a main frame is inserted into the guide mechanism, and the lead terminal is inserted into the positioning hole; the circuit board which is provided on the outer face side of the positioning hole forming part of the guide member, and in which the lead terminal extended from the positioning hole is inserted into the through-hole for joint; and a base plate covering the opening of the guide member opposing to the positioning hole forming part.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了获得在电路板附近封装多个电子部件的电路装置，并且在电子部件的引线端子和电路板的通孔之间具有优异的结可靠性。解决方案：电路装置包括：引导构件，其具有具有开口的凹入引导机构和具有定位孔的定位孔形成部; 其中主框架插入到引导机构中的电子部件，并且引线端子插入到定位孔中; 设置在形成引导部件的定位孔的外表面侧的电路板，其中从定位孔延伸的引线端子插入到用于接合的通孔中; 以及覆盖与定位孔形成部相对的引导构件的开口的基板。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2014175646A Temperature protection device of magnetic device and electric power unit 有权
标题翻译：磁性装置和电力单元的温度保护装置
公开(公告)号：JP2014175646A
公开(公告)日：2014-09-22
申请号：JP2013050310
申请日：2013-03-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MITSUI TAKAO , DEGUCHI YOSHIYUKI , URYU YUTA
IPC分类号： H01F27/00 , H02M3/155
摘要： PROBLEM TO BE SOLVED: To miniaturize a magnetic device by accurately estimating the temperature of the magnetic device in a temperature protection device of the magnetic device used for an electric power unit.SOLUTION: A temperature protection device 30 comprises: a current detection section 34 that detects a current I flowing through a reactor L1; a voltage detection section 32 that detects a voltage V between terminals of the reactor L1; a computation section 36 that estimates the temperature of the reactor L1 on the basis of the detection values of the current I and the voltage V; a determination section 40 that controls the output of an electric power unit on the basis of the estimated temperature of the reactor L1; and an initial setting section 38 that stores impedance Zi of the reactor L1 calculated by the computation section 36 at a reference temperature as an initial value. The computation section 36 calculates impedance Z of the reactor L1 from the detection values of the current I and the voltage V and calculates an estimated temperature on the basis of the impedance Z and the initial value Zi using the previously obtained relationship between the impedance and the temperature of the reactor L.
摘要翻译：要解决的问题：通过精确估计用于电力单元的磁性装置的温度保护装置中的磁性装置的温度，来使磁性装置小型化。解决方案：温度保护装置30包括：电流检测部34，检测流经反应器L1的电流I; 检测电抗器L1的端子间的电压V的电压检测部32; 计算部36，其基于电流I和电压V的检测值来估计电抗器L1的温度; 确定部40，其基于反应器L1的估计温度来控制电力单元的输出; 以及初始设定部38，其将由计算部36计算出的电抗器L1的基准温度的阻抗Zi存储为基准温度作为初始值。计算部36根据电流I和电压V的检测值来计算电抗器L1的阻抗Z，并根据阻抗Z和初始值Zi，根据先前获得的阻抗与反应器的温度L.

8. 发明专利

JP2012023083A Reactor device 审中-公开
标题翻译：反应器装置
公开(公告)号：JP2012023083A
公开(公告)日：2012-02-02
申请号：JP2010157737
申请日：2010-07-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOBAYASHI MASARU , MITSUI TAKAO , ISHII RYUICHI , IKEDA MATAHIKO , MAEKAWA HIROTOSHI
IPC分类号： H01F37/00
摘要： PROBLEM TO BE SOLVED: To provide a reactor device which has an improved heat dissipation performance, while ensuring sufficient insulating properties for automotive applications.SOLUTION: A reactor device 1 comprises: a metal case 2; a dielectric component 3 housed in the metal case 2; and mold resin 4, in the metal case 2, having the dielectric component 3 immersed therein. The metal case 2 is placed on a cooling heat sink 11 for dissipating heat. The dielectric component 3 is composed of a combination of insulating bobbins 5a and 5b, a coil 6, and cores 7a and 7b, and allows these parts to be closely arranged, while satisfying the insulating property required between a wound portion 62 of the coil 6 and the metal case 2 by using projections 51a and 51b extending from the insulating bobbins 5a and 5b, respectively. Thus, the heat dissipation performance of the coil can be significantly improved even in a narrow gap where it is difficult to fill the mold resin 4.
摘要翻译：要解决的问题：提供具有改善的散热性能的反应器装置，同时确保汽车应用的足够的绝缘性能。解决方案：反应器装置1包括：金属壳体2; 容纳在金属壳体2内的电介质部件3; 和金属壳体2中的模具树脂4，其中介电部件3浸没在其中。将金属壳体2放置在散热用散热器11上。电介质部件3由绝缘筒管5a和5b，线圈6和芯体7a和7b的组合构成，并且允许这些部件紧密配置，同时满足线圈6的卷绕部分62之间所需的绝缘性能和金属壳体2，分别使用从绝缘筒管5a和5b延伸的突起51a和51b。因此，即使在难以填充模制树脂4的狭窄间隙中，也可以显着提高线圈的散热性能。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011078217A Power module 有权
标题翻译：电源模块
公开(公告)号：JP2011078217A
公开(公告)日：2011-04-14
申请号：JP2009227470
申请日：2009-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOBAYASHI MASARU , IKEDA MATAHIKO , MAEKAWA HIROTOSHI , MITSUI TAKAO , ISHII RYUICHI , MORITAKE NAOKI
IPC分类号： H02M7/48 , H01L23/473
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a power module that is compact, has superior heat dissipation properties, is integrally composed of a semiconductor device incorporating a power semiconductor, a reactor device, and a heat sink, and is suitable for on-board use. SOLUTION: A fluid vessel 4, the reactor device 2, and the semiconductor device 3 are integrally composed as the power module. The reactor device 2 includes a base structure 6 comprising a metal base 61 and a molded resin material 62, a dielectric component 7, and a case 8. The molded resin material 62 is fitted into the fluid vessel 4 opposingly, prevents leakage of a cooling fluid, and easily positions the dielectric component 7 for support. Heat generated by the dielectric component 7 conducts inside the metal base 61 for radiation to the cooling fluid circulating inside the fluid vessel. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了获得紧凑的功率模块，具有优异的散热性，由并入功率半导体，反应器装置和散热器的半导体器件整体地组成，董事会使用。解决方案：流体容器4，反应器装置2和半导体装置3一体地组成为电源模块。反应器装置2包括基底结构6，其包括金属基底61和模制树脂材料62，电介质部件7和壳体8.模制树脂材料62相对地装配到流体容器4中，防止冷却流体，并且容易地定位用于支撑的介电部件7。由介质部件7产生的热量在金属基体61的内部导通，以便辐射到在流体容器内循环的冷却流体。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010073704A Semiconductor circuit device 有权
标题翻译：半导体电路设备
公开(公告)号：JP2010073704A
公开(公告)日：2010-04-02
申请号：JP2008235938
申请日：2008-09-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO , HISAOKA YASUSHI , MITSUI TAKAO
IPC分类号： H01L23/12 , H05K1/02 , H05K1/05
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor circuit device including a circuit through which a high frequency current flows and ensuring high current and high reliability by suppressing generation of heat from the wiring circuit. SOLUTION: A semiconductor circuit device includes a circuit board which is formed of a metal substrate, an insulating layer provided on the surface of the metal substrate, and wiring conductors provided on the surface of the insulating layer and mounting a switching element, wherein the wiring conductors are formed of a plurality of wiring conductors on the input side, a plurality of wiring conductors on the output side each conducting a high frequency current and having a footprint portion and a sidewall portion, and a plurality of wiring conductors on the control side, and the sidewall portions of adjoining wiring conductors on the output side in the plurality of wiring conductors on the output side are arranged closely to each other and substantially in parallel with each other. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括高频电流流动的电路并通过抑制来自布线电路的热产生而确保高电流和高可靠性的半导体电路器件。解决方案：半导体电路器件包括由金属基板形成的电路板，设置在金属基板的表面上的绝缘层，以及设置在绝缘层的表面上并安装开关元件的布线导体，其特征在于，所述布线导体由输入侧的多个布线导体构成，所述输出侧的多个布线导体分别具有高频电流且具有覆盖部和所述侧壁部;以及多个布线导体，控制侧，输出侧的多个布线导体的输出侧的相邻的布线导体的侧壁部彼此靠近并且基本上彼此平行地配置。版权所有（C）2010，JPO＆INPIT

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