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1. 发明专利

JP2012248633A Etching device, manufacturing method of solar cell, and solar cell 审中-公开
标题翻译：蚀刻装置，太阳能电池的制造方法和太阳能电池
公开(公告)号：JP2012248633A
公开(公告)日：2012-12-13
申请号：JP2011118383
申请日：2011-05-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MURAKAMI TOSHIYA , YASUNAGA NOZOMI , KARAKIDA SHOICHI , NONOGAKI MITSUHIRO , KOBAYASHI JUNJI , YOSHIDA YASUHIRO , OSHIRO YUSUKE
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a solar cell capable of manufacturing a solar cell having high generation efficiency with a high yield by forming a uniform texture in a silicon substrate surface by reducing cation concentration in an etching liquid by a texture etching step which uses an alkali solution and using a substrate whose surface is not contaminated.SOLUTION: A texture etching device (etching device) 100 for etching a silicon substrate 8 containing a p- or n-type dopant by immersing the silicon substrate in an etching liquid 9 comprises: an etching bath 1 which stores the etching liquid 9; and a first cation removal device 4A and a second cation removal device 4B which adsorb and collect the cations which are eluted into the etching liquid 9.
摘要翻译：解决的问题：提供一种太阳能电池的制造方法，其能够通过在蚀刻液中通过减少蚀刻液中的阳离子浓度来减少蚀刻液中的阳离子浓度，通过在硅衬底表面中形成均匀的织构，以高产率制造具有高发电效率的太阳能电池纹理蚀刻步骤，其使用碱溶液并使用表面未被污染的基材。解决方案：通过将硅衬底浸渍在蚀刻液体9中来蚀刻包含p型或n型掺杂剂的硅衬底8的纹理蚀刻装置（蚀刻装置）100包括：蚀刻槽1，其存储蚀刻液 9; 以及第一阳离子去除装置4A和第二阳离子去除装置4B，其吸附并收集洗脱到蚀刻液体9中的阳离子。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2003309274A Solar battery 有权
标题翻译：太阳能电池
公开(公告)号：JP2003309274A
公开(公告)日：2003-10-31
申请号：JP2002111734
申请日：2002-04-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NISHIDA TAKAHIKO , MORIKAWA HIROAKI , NAKATANI MITSUNORI , KARAKIDA SHOICHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To reduce the usage amount of the silver paste of an electrode while maintaining the performance of a cell without deteriorating characteristics of the cell, and to reduce the manufacturing cost of a solar battery. SOLUTION: In the solar battery for converting optical energy received into photovoltaic power, photovoltaic power on a light-receiving surface side is gathered and outputted, a free part which does not use silver is provided on a part of a bus electrode 12 composed of the silver and formed on the surface at the light-receiving surface side, and the solar battery is constituted. Thus, the usage amount of the silver paste of the electrode is reduced while maintaining the performance of the cell without deteriorating the characteristics of the cell and the manufacturing cost of the solar battery is reduced. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了降低电池的银浆的使用量，同时保持电池的性能而不劣化电池的特性，并且降低太阳能电池的制造成本。解决方案：在用于将接收的光能转换为光伏电力的太阳能电池中，光接收表面侧的光伏电力被聚集和输出，在总线电极12的一部分上设置不使用银的自由部分由银构成并形成在受光面侧的表面上，构成太阳能电池。因此，电极的银膏的使用量在保持电池的性能的同时降低，而不会劣化电池的特性，并且太阳能电池的制造成本降低。版权所有（C）2004，JPO

3. 发明专利

JP2013128137A Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2013128137A
公开(公告)日：2013-06-27
申请号：JP2013024404
申请日：2013-02-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KARAKIDA SHOICHI , NISHIDA TAKAHIKO , NAKATANI MITSUNORI , MORIKAWA HIROAKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell and a manufacturing method thereof in which detachment of electrodes is effectively prevented.SOLUTION: There is provided a solar cell comprising: a photoelectric conversion layer (substrate) having a first surface and a second surface; a first electrode (surface side silver electrode 21) on the first surface; a second electrode (aluminum electrode 17) formed of a first metallic paste, the second electrode being on the second surface; and a third electrode formed of a second metallic paste, the third electrode being on the second surface. The third electrode is configured to extract output from the second electrode, and on the second surface, the third electrode overlaps the second electrode in a state where the second electrode is directly sandwiched between the second surface and the third electrode. An alloy part 23 is formed on the whole area where the first metallic paste and the second metallic paste overlap each other. The thickness of the second electrode is greater than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode (backside silver electrode 19) is 10 μm or more and 30 μm or less.
摘要翻译：要解决的问题：提供一种能够有效地防止电极脱离的太阳能电池及其制造方法。解决方案：提供一种太阳能电池，包括：具有第一表面和第二表面的光电转换层（基板）; 在第一表面上的第一电极（表面侧银电极21）由第一金属膏形成的第二电极（铝电极17），第二电极位于第二表面上; 以及由第二金属膏形成的第三电极，所述第三电极位于所述第二表面上。第三电极被配置为从第二电极提取输出，并且在第二表面上，第三电极在第二电极直接夹在第二表面和第三电极之间的状态下与第二电极重叠。在第一金属膏和第二金属膏彼此重叠的整个区域上形成合金部分23。第二电极的厚度大于第三电极的厚度，第二电极和第三电极（背面银电极19）的厚度之间的差为10μm以上且30μm以下。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013098301A Etching apparatus, etching method, and method for manufacturing solar cell 审中-公开
标题翻译：蚀刻装置，蚀刻方法和制造太阳能电池的方法
公开(公告)号：JP2013098301A
公开(公告)日：2013-05-20
申请号：JP2011238807
申请日：2011-10-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MURAKAMI TOSHIYA , YOSHIDA YASUHIRO , YASUNAGA NOZOMI , KARAKIDA SHOICHI , NONOGAKI MITSUHIRO , KOBAYASHI JUNJI , TSUGENO HAJIME , OSHIRO YUSUKE
IPC分类号： H01L21/306 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain an etching apparatus which is capable of suppressing a texture formation failure as compared with conventional ones in a texture etching process in solar cell manufacturing.SOLUTION: The etching apparatus for etching a silicon substrate 100 by immersing it in an etchant 13 includes: an etching bath 11 in which the etchant 13 is stored and the silicon substrate 100 is etched; and a hydrophobic organic substance collection part 15 for collecting a hydrophobic organic substance eluted into the etchant 13.
摘要翻译：要解决的问题：与太阳能电池制造中的纹理蚀刻工艺中的传统方法相比，获得能够抑制纹理形成故障的蚀刻装置。解决方案：用于通过将硅衬底100浸入蚀刻剂13中来蚀刻硅衬底100的蚀刻装置包括：其中存储蚀刻剂13并蚀刻硅衬底100的蚀刻槽11; 和用于收集洗脱到蚀刻剂13中的疏水性有机物质的疏水性有机物质收集部分15.权利要求：（C）2013，JPO＆INPIT

5. 发明专利

JP2011018748A Method of manufacturing solar battery cell 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：JP2011018748A
公开(公告)日：2011-01-27
申请号：JP2009161889
申请日：2009-07-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KARAKIDA SHOICHI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar battery cell that can manufacture a solar battery having superior photoelectric conversion efficiency, by removing a dead layer of a surface layer of an impurity diffusion layer in a simple and sure way.SOLUTION: A method of manufacturing a solar battery cell having a light-receiving surface side electrode on one side of a semiconductor substrate, includes: a first step of forming an impurity diffusion layer in which a second conductivity-type impurity element is diffused on one side of the semiconductor substrate of a first conductivity-type; a second step of removing a natural oxide film formed on a surface layer of the impurity diffusion layer using the solution containing hydrofluoric acid by etching; a third step of carrying out a water cleaning process and a drying process to the surface layer of the impurity diffusion layer, to oxygenize the surface layer of the impurity diffusion layer and form a first oxidation layer; a fourth step of removing the first oxidation layer using the solution containing hydrofluoric acid by etching; a fifth step of forming an antireflection film on the impurity diffusion layer; and a sixth step of forming the light-receiving surface side electrode that penetrates the antireflection film and which is electrically connected to the impurity diffusion layer, on the antireflection film.
摘要翻译：要解决的问题：提供一种通过以简单且可靠的方式去除杂质扩散层的表面层的死层来制造可制造具有优异光电转换效率的太阳能电池的太阳能电池单元的方法。解决方案：一种制造在半导体衬底的一侧具有受光面侧电极的太阳能电池单元的方法，包括：形成杂质扩散层的第一工序，其中第二导电型杂质元素在第一导电型的半导体衬底; 使用含有氢氟酸的溶液通过蚀刻去除形成在杂质扩散层的表面层上的自然氧化膜的第二步骤; 对杂质扩散层的表面层进行水洗处理和干燥处理的第3工序，对杂质扩散层的表面层进行氧化，形成第1氧化层; 使用含有氢氟酸的溶液通过蚀刻去除第一氧化层的第四步骤; 在杂质扩散层上形成防反射膜的第五步骤; 以及第六步骤，在防反射膜上形成穿透防反射膜并与该杂质扩散层电连接的受光面侧电极。

6. 发明专利

JP2004207493A Semiconductor device, its manufacturing method, and solar cell 审中-公开
公开(公告)号：JP2004207493A
公开(公告)日：2004-07-22
申请号：JP2002374965
申请日：2002-12-25
申请人： Du Pont Kk , Mitsubishi Electric Corp , デュポン株式会社 , 三菱電機株式会社
发明人： MORIKAWA HIROAKI , NISHIDA TAKAHIKO , KARAKIDA SHOICHI , NAKATANI MITSUNORI , KONNO TAKUYA
IPC分类号： H01L21/28 , H01L21/288 , H01L31/04
CPC分类号： Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device prominent in resistance to moisture and excellent in productivity while being capable of sufficiently suppressing a manufacturing cost and never influencing bad affection to the global environment, and to provide its manufacturing method as well as a solar cell. SOLUTION: In the solar cell, a nitride silicon film 30 is formed on an Si substrate 10, and a conductive metal paste material 500 is applied thereon by printing to calcine the same. In the manufacturing method of a semiconductor device forming a surface silver electrode 501 by fire through, the film 30 is formed by a CVD method and the material 500 comprises silver powder, an organic vehicle and glass powder while the adding amount of the glass powder is not less than 1.5 wt.% with respect to the material 500, the softening point of the glass powder is 450-550°C, the content of B 2 O 3 in the glass powder is not more than 15 wt.%, and calcination is effected in dry atmosphere at 800-850°C. Further, the semiconductor device manufactured by the manufacturing method and the solar cell comprising the semiconductor device are obtained. Solder coating is not used, the productivity can be remarkably improved while reducing a manufacturing cost while lead is not used, and, therefore, it becomes especially favorable in the consideration of environment. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004088124A Manufacturing method of semiconductor laser, and semiconductor laser 审中-公开
公开(公告)号：JP2004088124A
公开(公告)日：2004-03-18
申请号：JP2003365828
申请日：2003-10-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KINETSUKI HIROTAKA , KARAKIDA SHOICHI
IPC分类号： H01S5/24
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser so as to easily manufacture semiconductor lasers that have uniform characteristics. SOLUTION: After forming a semiconductor laminate structure that has an n-type clad layer 2, an active layer 3, a p-type clad layer 4, and an n-type current block layer 5 on an n-type substrate 1, an insulating film pattern 7 which has a stripe-shaped opening is formed on the semiconductor layer laminate structure. Then, the semiconductor laminate structure is etched by chlorine gas etching using the insulating film pattern 7 as an etching mask, and a stripe groove that has the side planes of (111) B plane and V-shaped cross section is formed. After forming a current path in the stripe groove so as to inject current to the active layer, p-type semiconductor 8 is buried and grown in the stripe groove and crystal is grown on the wafer as a p-type contact layer 11. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003338631A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003338631A
公开(公告)日：2003-11-28
申请号：JP2002147864
申请日：2002-05-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MORIKAWA HIROAKI , NAKATANI MITSUNORI , KARAKIDA SHOICHI , NISHIDA TAKAHIKO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To solve following problems: when a light-reception-surface electrode of a semiconductor is coated with solder, solder balls coagulated in ball shapes are formed on a grid electrode, although the solder balls alone cannot be easily removed in general, one part of the light-reception-surface electrode is also removed, a broken part is formed in the grid electrode, collection is not carried out effectively, and conversion efficiency in a solar cell is reduced. SOLUTION: The semiconductor device comprises: a semiconductor substrate where the light-reception-surface electrode is provided on a light reception surface; a grid electrode provided on the light-reception-surface electrode so that the grid electrode becomes nearly vertical to the liquid level of molten solder when the semiconductor substrate is dipped in a soldering bath; and a bus electrode that is provided on the light-reception-surface electrode so that the bus electrode becomes nearly horizontal relative to a liquid surface and nearly orthogonally crosses the grid electrode. The grid electrode is formed of at least two parts having different widths, and the width of the part from a position where the grid electrode nearly orthogonally crosses the bus electrode to a fixed position toward a direction where the semiconductor substrate is dipped into the molten solder is wider. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了解决以下问题：当半导体的受光面电极涂覆有焊料时，在栅电极上形成凝固成球形的焊球，尽管单独的焊球不容易通常，通过除去光接收面电极的一部分，在栅电极中形成断裂部，不能有效地进行收集，并且降低太阳能电池的转换效率。解决方案：半导体器件包括：光接收表面电极设置在光接收表面上的半导体衬底; 设置在受光面电极上的栅极，使得当半导体衬底浸入焊浴时，栅电极变得与熔融焊料的液面几乎垂直; 以及设置在受光面电极上的总线电极，使得总线电极相对于液面几乎成为水平，并且几乎正交地与栅电极交叉。栅格电极由至少两个具有不同宽度的部分形成，并且该部分的宽度从栅电极几乎正交地跨过总线电极到固定位置朝向半导体衬底浸入熔融焊料的方向更宽版权所有（C）2004，JPO

9. 发明专利

JP2014203849A 太陽電池用基板の製造方法及び太陽電池有权
标题翻译：太阳能电池和太阳能电池基板的制造方法
公开(公告)号：JP2014203849A
公开(公告)日：2014-10-27
申请号：JP2013076231
申请日：2013-04-01
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： NONOGAKI MITSUHIRO , TSUGENO HAJIME , KARAKIDA SHOICHI , OSHIRO YUSUKE , KAWASAKI TAKAHIRO
IPC分类号： H01L31/04 , H01L21/306
CPC分类号： Y02E10/50 , Y02P70/521
摘要：【課題】薬液使用コストを低減でき、かつ基板面内均一で太陽電池特性低下を引き起こさないテクスチャー構造を得ること。【解決手段】加工用スラリーを用いて半導体インゴットをスライスして半導体基板を切り出し、ウエハ表面のスラリーを除去した後、該基板を表面処理することにより、基板表面にテクスチャーを形成する太陽電池用基板の製造方法であって、p型単結晶シリコン基板などの半導体基板の表面処理を、少なくとも過酸化水素と金属捕捉剤を含む第1の水溶液に浸漬して基板表面の有機不純物と金属不純物を除去した(S1003)後、少なくともアルカリ物質を含む第2の水溶液で、前記半導体基板のスライスにより生じた基板表面のダメージ層を除去した(S1004)後、アルカリ系水溶液などの第3の水溶液に浸漬して、異方性エッチングを行い(S1005)、凹凸部からなるテクスチャー構造を形成する。【選択図】図1
摘要翻译：要解决的问题：获得可以降低液体化学品使用成本的纹理结构，其在基板表面中是均匀的，并且防止太阳能电池的特性被降低。解决方案：一种制造方法用于太阳能电池的衬底包括：通过在使用处理浆料的同时切割半导体锭来切割半导体衬底; 以及在除去晶片表面上的浆料之后，通过对基板进行表面处理，在基板的表面上形成纹理。在诸如p型单晶硅衬底的半导体衬底的表面处理中，将半导体衬底浸入至少含有过氧化氢和金属清除剂的第一水溶液中，以除去有机杂质和金属杂质基板表面（S1003），然后在含有至少一种碱性物质的第二水溶液（S1004）中除去在半导体晶片上切片得到半导体基板而导致的基板表面上的损伤层（S1004），然后将其浸入第三水溶液溶液，例如碱性水溶液，用于进行各向异性蚀刻（S1005），从而形成由凹凸形成的织构结构。

10. 发明专利

JP2009290235A Solar cell, and manufacturing method thereof 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2009290235A
公开(公告)日：2009-12-10
申请号：JP2009206182
申请日：2009-09-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KARAKIDA SHOICHI , NISHIDA TAKAHIKO , NAKATANI MITSUNORI , MORIKAWA HIROAKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a solar cell in which peeling of an electrode is effectively prevented, and to provide a manufacturing method thereof. SOLUTION: In the solar cell provided with: a substrate 10 having a photoelectric conversion function: a first electrode 21 provided on one surface side of the substrate 10; a second electrode 17 provided on the other surface side of the substrate 10; and a third electrode 19 whose outer edge part is provided by being overlapped on the second electrode 17 in the inside the surface direction of the substrate 10 on the other surface side of the substrate 10, and for taking out output from the second electrode 17, thickness of the second electrode 17 is larger than that of the third electrode 19, and difference between the thickness of the second electrode 17 and thickness of the third electrode 19 is 10 μm or more and 30 μm or less. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：获得有效防止电极剥离的太阳能电池，并提供其制造方法。解决方案：在具有：具有光电转换功能的基板10的太阳能电池中，设置在基板10的一个表面侧的第一电极21; 设置在基板10的另一个表面侧的第二电极17; 以及第三电极19，其外缘部分通过在基板10的另一表面侧上的基板10的表面方向内侧的第二电极17上重叠设置，并且用于从第二电极17取出输出，第二电极17的厚度大于第三电极19的厚度，第二电极17的厚度和第三电极19的厚度之间的差为10μm以上且30μm以下。版权所有（C）2010，JPO＆INPIT

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