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    • 2. 发明专利
    • Distortion generating circuit and distortion compensating device
    • 失真产生电路和失真补偿装置
    • JP2006074699A
    • 2006-03-16
    • JP2004258898
    • 2004-09-06
    • Mitsubishi Electric CorpShimada Phys & Chem Ind Co Ltd三菱電機株式会社島田理化工業株式会社
    • MARUYAMA HIROSHIIWASAKI TAKASHIOGAWA KAZUYOSHISUZUE HIDEKIIKEDA YUKIOYAMAUCHI KAZUHISANOTO HIFUMI
    • H01P1/00H03F1/32
    • PROBLEM TO BE SOLVED: To provide a distortion compensating device generating larger distortion components than current distortion generating amplifiers.
      SOLUTION: The distortion compensating device is provided with a particular distortion generating circuit 17. The distortion generating circuit 17 distributes an input signal input to an input terminal 16 into two lines in an electric power distributor 51, and synthesizes outputs from the two lines in an electric power synthesizer 56. A first phase shifter 52 and a first distortion generator 53 are inserted to be connected in series with one of the two lines, while a second phase shifter 54 and a second distortion generator 55 are inserted to be connected in series with the other line. The first phase shifter 52 and the second phase shifter 54 are configured in such a way that a phase difference between an signal input from the first phase shifter 52 to the electric power synthesizer 56 via the first distortion generator 53, and an signal input from the second phase shifter 54 to the electric power synthesizer 56 via the second distortion generator 55, is 180 degree so that a double-level distortion component is output in comparison with the current devices.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供产生比电流失真发生放大器更大失真分量的失真补偿装置。 解决方案:失真补偿装置设置有特定的失真发生电路17.失真产生电路17将输入到输入端子16的输入信号分配到电力分配器51中的两条线路中,并且从两者中合成输出 电源合成器56中的线路。第一移相器52和第一失真发生器53被插入以与两条线中的一条串联连接,而第二移相器54和第二失真发生器55插入以被连接 与另一行串联。 第一移相器52和第二移相器54被配置为使得经由第一失真发生器53从第一移相器52输入到电力合成器56的信号之间的相位差以及从第一移相器52输入的信号 经由第二失真发生器55的电力合成器56的第二移相器54为180度,与当前的装置相比,输出双电平失真分量。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Power-combined high-power fet
    • 电源组合大功率FET
    • JP2005123995A
    • 2005-05-12
    • JP2003358352
    • 2003-10-17
    • Mitsubishi Electric Corp三菱電機株式会社
    • YUGAWA HIDENORIIKEDA YUKIOTARUI YUKINORI
    • H01L21/82H01P3/08H01P5/02H01P5/08
    • PROBLEM TO BE SOLVED: To obtain a power-combined high-power FET which improves the combination efficiency of a signal to be amplified by reducing amplitude deviation in a dividing/combining circuit to raise output power.
      SOLUTION: A power divider circuit, an FET 6 and a power combiner circuit are provided. The power divider circuit is composed of a dielectric board 3, a tapered conductor pattern 4 and a ground pattern 5. The dielectric board 3 has thinner portions having trenches 12 than a central portion. The FET 6 is composed of a dielectric board, a plurality of unit FET cells and a ground pattern. The power combiner circuit is composed of a dielectric board 9, a tapered conductor pattern 10, and a ground pattern 11. The dielectric board 9 has thinner portions having the trenches 12 than the central portion.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了获得通过减小分频/组合电路中的幅度偏差来提高输出功率而提高待放大信号的组合效率的电力组合大功率FET。 解决方案:提供功率分配器电路,FET 6和功率合成器电路。 功率分配器电路由电介质基板3,锥形导体图案4和接地图案5组成。电介质基板3具有比中心部分更薄的具有沟槽12的部分。 FET 6由电介质基板,多个单位FET单元和接地图形构成。 功率组合器电路由电介质板9,锥形导体图案10和接地图案11组成。电介质板9具有比中心部分更薄的具有沟槽12的部分。 版权所有(C)2005,JPO&NCIPI
    • 6. 发明专利
    • Bias circuit for amplifier and high-frequency field effect transistor amplifier
    • 用于放大器和高频场效应晶体管放大器的偏置电路
    • JP2003060444A
    • 2003-02-28
    • JP2001249376
    • 2001-08-20
    • Mitsubishi Electric Corp三菱電機株式会社
    • YAMANAKA KOJIIKEMATSU HIROSHIYAMAUCHI KAZUHISAMORI KAZUTOMIIKEDA YUKIOTAKAGI SUNAO
    • H03F1/30H03F3/195
    • PROBLEM TO BE SOLVED: To obtain a bias circuit for an amplifier, capable of incorporating large temperature characteristics in an output voltage according to a single negative voltage.
      SOLUTION: The bias circuit for the amplifier comprises resistors 44 and 45, connected in series between a power source terminal 41 and a ground and having temperature characteristics different from each other, a field effect transistor 43 having a gate connected between the resistors 44 and 45, a resistor 45 connected between the power source terminal 41 and the source of the transistor 43, a resistor 47 connected between the drain of the transistor 43 and the ground, and an output voltage terminal 42 for generating on output voltage between the drain of the transistor 43 and the resistor 47.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了获得能够根据单个负电压在输出电压中引入大的温度特性的放大器的偏置电路。 解决方案:放大器的偏置电路包括电阻器44和45,其串联连接在电源端子41和接地之间并具有彼此不同的温度特性;场效应晶体管43,其栅极连接在电阻器44和45之间 连接在电源端子41和晶体管43的源极之间的电阻器45,连接在晶体管43的漏极和地之间的电阻器47,以及用于在输出端子42的漏极之间产生输出电压的输出电压端子42。 晶体管43和电阻47。
    • 7. 发明专利
    • Power synthetic amplifier
    • 电源合成放大器
    • JP2009153193A
    • 2009-07-09
    • JP2009053726
    • 2009-03-06
    • Mitsubishi Electric CorpShimada Phys & Chem Ind Co Ltd三菱電機株式会社島田理化工業株式会社
    • IWASAKI TAKASHIMARUYAMA HIROSHIMIYADERA NOBUOOGAWA KAZUYOSHIIKEDA YUKIOHORIGUCHI KENICHINAKAYAMA MASATOSHI
    • H03F1/07H03F3/60
    • H03F1/0288
    • PROBLEM TO BE SOLVED: To provide a power synthetic amplifier that can be easily accomplished over a wide band and with high efficiency.
      SOLUTION: The power synthetic amplifier is provided which includes: a class-B operational transistor 3 provided in one of two paths to which a predetermined input signal is distributed, for amplifying the input signal; a class-C operational transistor 4 provided in the other path, for amplifying the input signal; and a T branch 11 for synthesizing output power of the class-B operational transistor 3 and output power of the class-C operational transistor 4. The output power of the class-B operational transistor 3 is sent to the T branch 11 via a first isolator 9, and the output power of the class-C operational transistor 4is sent to the T branch 11 via a second isolator 10. A load impedance of the class-B operational transistor 3 is settled to a fixed value by the first isolator 9, and a load impedance of the class-C operational transistor 4 is settled to a fixed value by the second isolator 10.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供能够在宽带上并且以高效率容易地实现的功率合成放大器。 解决方案:提供功率合成放大器,其包括:设置在分配有预定输入信号的两个路径之一中的B类操作晶体管3,用于放大输入信号; 设置在另一路径中的用于放大输入信号的C类操作晶体管4; 以及用于合成B类运算晶体管3的输出功率的T分支11和C类运算晶体管4的输出功率.B类运算晶体管3的输出功率经由第一 隔离器9,并且C类工作晶体管4的输出功率经由第二隔离器10发送到T分支11.B类工作晶体管3的负载阻抗由第一隔离器9确定为固定值, 并且通过第二隔离器10将C类工作晶体管4的负载阻抗稳定为固定值。版权所有(C)2009,JPO&INPIT
    • 8. 发明专利
    • Amplifier
    • 放大器
    • JP2005005948A
    • 2005-01-06
    • JP2003166156
    • 2003-06-11
    • Mitsubishi Electric Corp三菱電機株式会社
    • YAMAUCHI KAZUHISAIKEDA YUKIOMORI KAZUTOMINAKAHARA KAZUHIKOKOIDE HIDEYUKITSUBOTA YOSHIHIRO
    • H03F3/60H03F3/68
    • PROBLEM TO BE SOLVED: To provide an amplifier having an input/output matching circuit where a plurality of transistors are connected in parallel, and the deterioration of a gain and the decrease of an output power are minimized.
      SOLUTION: This amplifier is provided with a plurality of transistors for amplifying power, an input matching circuit for distributing input power to the plurality of transistors, and an output matching circuit for compositing power amplified by the plurality of transistors. The input matching circuit is provided with an input matching substrate configuring one high frequency transmission line which is constituted of a ground conductor and a strip conductor and whose line width is fixed, and the strip conductor is provided with a plurality of input terminals at one end of the high frequency transmission path and a plurality of output terminals which are connected to the inputs of the transistors whose number is not less than the number of the input terminals respectively, at the other end of the high frequency transmission path.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了提供一种放大器,其具有并联连接多个晶体管的输入/输出匹配电路,并且增益的劣化和输出功率的降低被最小化。 解决方案:该放大器设置有用于放大功率的多个晶体管,用于将输入功率分配给多个晶体管的输入匹配电路和用于合成由多个晶体管放大的功率的输出匹配电路。 输入匹配电路设置有输入匹配基板,其构成由接地导体和带状导体构成的一个高频传输线,并且线宽固定,并且带状导体在一端设置有多个输入端子 的高频传输路径的多个输出端子,以及多个输出端子,其分别连接到高频传输路径的另一端的数量不小于输入端子数量的晶体管的输入端。 版权所有(C)2005,JPO&NCIPI
    • 10. 发明专利
    • High-frequency module and antenna device
    • 高频模块和天线设备
    • JP2003283212A
    • 2003-10-03
    • JP2002083248
    • 2002-03-25
    • Mitsubishi Electric Corp三菱電機株式会社
    • YONEDA HISAFUMIMIYAZAKI MORIYASUOWADA SATORUOHASHI HIDEMASAYAMANAKA KOJIMORI KAZUTOMIIKEDA YUKIOHORIE SOSUKEIIDA AKIOOZAKI YUTAKA
    • H01P1/208H01P1/211H01P1/213H04B1/40
    • H01P1/2131H01P1/2138
    • PROBLEM TO BE SOLVED: To obtain a high-frequency module for reducing an antenna device in size and weight and improving the degree of freedom of arrangement of constituent circuits, and an antenna device which is reduces in size and weight.
      SOLUTION: The module is provided with a first main waveguide 1, a T- branch circuit 3 connected to the waveguide 1, a first low-pass filter 5 connected to the circuit 3, a band-pass filter 7 connected to the filter 3, a first converter 8 connected to the filter 5 to convert a transmission line between the waveguide and a microwave integrated circuit, an amplifier 10 connected to the converter 8 and constituted by the integrated circuit, a second converter 9 connected to the amplifier 10 to convert a transmission line between the waveguide and the integrated circuit, a second low-pass filter 6 connected to the amplifier 10, a second T-branch circuit 4 connected to the filter 6 and to the filter 7, and a second main waveguide 2 connected to the circuit 4.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了获得用于减小天线装置的尺寸和重量的高频模块,并且提高组成电路的布置的自由度,以及减小尺寸和重量的天线装置。 解决方案:模块设置有第一主波导1,连接到波导1的T分支电路3,连接到电路3的第一低通滤波器5,连接到波导1的带通滤波器7 滤波器3,连接到滤波器5以转换波导和微波集成电路之间的传输线的第一转换器8,连接到转换器8并由集成电路构成的放大器10,连接到放大器10的第二转换器9 转换波导和集成电路之间的传输线,连接到放大器10的第二低通滤波器6,连接到滤波器6和滤波器7的第二T分支电路4和第二主波导2 连接到电路4.版权所有(C)2004,JPO