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1. 发明专利

JPS5766639A Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：JPS5766639A
公开(公告)日：1982-04-22
申请号：JP14148480
申请日：1980-10-09
申请人： Mitsubishi Electric Corp
发明人： MIZUGUCHI KAZUO , NAGASAWA KOUICHI , SHIBAYAMA ISAO
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32623
摘要： PURPOSE:To prevent the contamination of a sample by a method wherein a metal net for electrostatic shielding is arranged in a chamber forming an etching tank and adhesion of an excessive reactive product to an internal wall surface is interrupted. CONSTITUTION:A metal net 8 for electrostatic shielding is arranged in a chamber 1. And a reactive charge ion molecular performing etching is decelerated or neutralized by approching or contacting the net 8. In this way, an excessive reactive product will not be left in the chamber 1 but be exhausted outside and the contamination of a sample 4 is remarkably reduced.
摘要翻译：目的：为了防止样品的污染，其中用于静电屏蔽的金属网布置在形成蚀刻槽的室中，并且过量反应产物与内壁表面的粘附被中断。构成：用于静电屏蔽的金属网8布置在室1中。并且通过对网8进行接触或接触来减少或中和反应性电荷离子分子执行蚀刻。以这种方式，过量的反应产物将不会留在室1，但在外部被排出，并且样品4的污染显着减少。

2. 发明专利

JPS5745234A Method for formation of microscopic pattern 失效
标题翻译：形成微观图案的方法
公开(公告)号：JPS5745234A
公开(公告)日：1982-03-15
申请号：JP12050580
申请日：1980-08-29
申请人： Mitsubishi Electric Corp
发明人： MASUKO YOUJI , HARADA HIROJI , OOHAYASHI YOSHIKAZU , SHIBAYAMA ISAO , NISHIOKA KIYUUSAKU
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3105
CPC分类号： H01L21/3105
摘要： PURPOSE:To form the microscopic pattern by a method wherein the film, consisting of a substance which will be sublimated by irradiation of a particle beam or radioactive rays, is formed on a substarate and a pattern is directly drawn on the abovememtioned film by irradiating the particle beam or radioactive rays. CONSTITUTION:An aluminum layer 2 and a molybdenum oxide film 6 are laminated on an SiO2 substrate 1. When a direct patterning is performed on the film 6 by irradiating an electron beam 7, the section whereon the electron beam 7 was irradiated is sublimated and a pattern having a molybdenum oxide film 6 is obtained, because the molybdenum oxide has the characteristic of sublimation when an annealing is performed at the temperature of 500 deg.C or above. The microscopic wiring pattern of aluminum is formed by performing an etching by a commonly used method on the aluminum layer 2 using the abovementioned pattern as a mask.
摘要翻译：目的：通过以下方法形成微观图案：通过将通过照射粒子束或放射线而升华的物质的膜由形成在基底上的图案形成在图案上，并通过照射粒子束或放射线。构成：在SiO 2基板1上层叠铝层2和氧化钼膜6.当通过照射电子束7对膜6进行直接图案化时，照射电子束7的部分升华，由于当在500℃以上的温度下进行退火时，氧化钼具有升华的特性，因此得到具有氧化钼膜6的图案。通过使用上述图案作为掩模在铝层2上通过常规方法进行蚀刻来形成铝的微观布线图案。

3. 发明专利

JPS5723228A Dry etching device 失效
标题翻译：干蚀设备
公开(公告)号：JPS5723228A
公开(公告)日：1982-02-06
申请号：JP9789080
申请日：1980-07-16
申请人： Mitsubishi Electric Corp
发明人： SHIBAYAMA ISAO , NAGASAWA KOUICHI , MIZUGUCHI KAZUO
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32431
摘要： PURPOSE:To perform dry etching keeping constantly the inside of a dry etching tank cleanly by method wherein impurity absorbing members are provided detachable freely on the inside walls of the etching tank. CONSTITUTION:The members 8 to absorb impurities generated by etching are provided detachable freely on the side walls of the etching tank 4, and traditional reactive etching is performed. The member 8 is consisted of glass wool, Al or stainless steel being formed unevenness on the surface thereof. By this constitution, cleanness of the inside of tank can be kept constantly by exchanging the members 8 properly, and the semiconductor device having favorable characteristic can be obtained.
摘要翻译：目的：通过干法蚀刻槽内部的干法蚀刻，通过干法蚀刻槽的内壁上可自由分离地提供杂质吸收件的方法进行干蚀刻。构成：用于吸收由蚀刻产生的杂质的构件8在蚀刻槽4的侧壁上自由地分开设置，并进行传统的反应蚀刻。构件8由其表面上形成为不平坦的玻璃棉，Al或不锈钢构成。通过这种结构，通过适当地更换构件8可以不断地保持罐内部的清洁，并且可以获得具有良好特性的半导体器件。

4. 发明专利

JPS5766638A Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：JPS5766638A
公开(公告)日：1982-04-22
申请号：JP14148380
申请日：1980-10-09
申请人： Mitsubishi Electric Corp
发明人： NAGASAWA KOUICHI , MIZUGUCHI KAZUO , SHIBAYAMA ISAO
IPC分类号： H01L21/302 , H01J37/34
CPC分类号： H01J37/3435
摘要： PURPOSE:To cool samples up to a predetermined temperature with good controllability by providing a lower electrode working as a sample stand with compression and expansion means consisting of a cylinder and a piston, and gas in the cylinder chamber is repeatedly compressed and expanded. CONSTITUTION:A cylinder 9 is formed in a lower electrode 3 to be a sample stand and a piston 10 is engaged with the cylinder 9 to permit operation from outside.Gas such as ammonia, alcohol is sealed in the chamber of the cylinder 9 and a thermocouple 11 for temperature detection is arranged in the vicinity of the surface of the lower electrode 3. The temperature of the lower electrode 3 and that of the sample 8 in can be decreased by repeatedly compressing and expanding the sealed gas by the reciprocating operation of the piston 10 and the samples 8 are maintained at a predetermined temperature by controlling the reciprocating operation of the piston 10 by using the detection output of the thermcouple 11.
摘要翻译：目的：通过提供作为样品台的下部电极，通过气缸和活塞组成的压缩和膨胀装置，将样品冷却到预定温度，具有良好的可控性，气缸室中的气体被反复压缩和膨胀。构成：在下部电极3中形成作为样品台的气缸9，活塞10与气缸9接合以允许从外部进行操作。诸如氨，乙醇等的气体被密封在气缸9的室中，用于温度检测的热电偶11被布置在下电极3的表面附近。下电极3和样品8的温度可以通过反复压缩和膨胀密封气体而减少，通过使用热电偶11的检测输出来控制活塞10的往复运动，活塞10和样品8保持在预定温度。

5. 发明专利

JPS5743425A Forming method for fine pattern 失效
标题翻译：精细图案的形成方法
公开(公告)号：JPS5743425A
公开(公告)日：1982-03-11
申请号：JP11997680
申请日：1980-08-28
申请人： Mitsubishi Electric Corp
发明人： OOHAYASHI YOSHIKAZU , HARADA HIROJI , SHIBAYAMA ISAO , MASUKO YOUJI , NISHIOKA KIYUUSAKU
IPC分类号： H01L21/027
CPC分类号： H01L21/0271
摘要： PURPOSE:To obtain a fine pattern by forming a thin metallic film on a lower thin resist and an upper thick resist on the metallic film, etching the metallic film with the upper resist as a mask, and further etching the metallic film with the lower resist as a mask. CONSTITUTION:A thin metallic film 2 is formed on a glass substrate 1, a thin lower resist layer 6 is coated on the film, is patterned, and the processed part 4 is exposed. Then, a thin metallic film 7 is coated on the lower resist layer 6 including the exposed part, an upper resist layer 8 is coated thereon, and is patterned. With the upper resist layer 8 thus patterned as a mask the intermediate metallic film 7 is dry etched and removed, and the metallic film 2 is positively removed with high accuracy by dry etching with the layer 8, the film 7 and the layer 6 as masks.
摘要翻译：目的：为了通过在金属膜上的下层抗蚀剂和上部厚抗蚀剂上形成薄的金属膜来形成精细图案，用上部抗蚀剂作为掩模蚀刻金属膜，并用下部抗蚀剂进一步蚀刻金属膜作为面具。构成：在玻璃基板1上形成薄的金属膜2，在薄膜上涂布薄的下层抗蚀剂层6，进行图案化，使被处理部4露出。然后，在包括露出部分的下抗蚀剂层6上涂覆薄金属膜7，在其上涂覆上抗蚀剂层8并进行图案化。通过将上抗蚀剂层8图案化为掩模，中间金属膜7被干蚀刻去除，并且通过用层8，膜7和层6作为掩模的干蚀刻以高精度积极地去除金属膜2 。

6. 发明专利

JPS5710234A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5710234A
公开(公告)日：1982-01-19
申请号：JP8484380
申请日：1980-06-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBAYAMA ISAO , HARADA HIROJI , OOHAYASHI YOSHIKAZU , MASUKO YOUJI , NISHIOKA KIYUUSAKU
IPC分类号： H01L21/027 , G03F7/20 , H01L21/28 , H01L21/30 , H01L21/3205
摘要： PURPOSE:To form an extremely small pattern formed of an Mo film by forming the Mo film on a substrate on which a pattern is provided, selectively injecting oxygen ions to the film, raising the temperature with an energy beam and then removing it. CONSTITUTION:An Mo film 2 is covered on the overall surface of a substrate 1 in the step of forming a mask pattern on the semiconductor substrate 1 so as to form, for example, a diffused region or the like. Then, oxygen ions are injected on the prescribed position of the film 2, and the prescribed position is converted into an oxidized Mo film 3. Subsequently, a laser light is emitted to the film 3, the film 3 is raised an its temperature to 500 deg.C to allow it to sublimate, and the film 3 is thus removed. The influence to the device can be reduced by performing the removing step in vacuum. In this manner, the diffusing mask pattern made of the film 2 and having an opening 4 can be produced without sidewise etching step precisely.

7. 发明专利

JPS57121254A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS57121254A
公开(公告)日：1982-07-28
申请号：JP818481
申请日：1981-01-21
申请人： Mitsubishi Electric Corp
发明人： SHIBAYAMA ISAO , ITAKURA HIDEAKI , HIRATA KATSUHIRO
IPC分类号： H01L23/522 , H01L21/768 , H01L21/88
摘要： PURPOSE:To reduce the number of steps of manufacture a semiconductor device by simultaneously forming by an ion implantation method mutual wire formed between an insulating layer and a semiconductor layer. CONSTITUTION:An interlayer insulating layer 3 is formed on the overall surface including a lower wire metallic film 2 on a semiconductor substrate 1, metallic ions are implanted from the position to be connected with the film 2 to become the wire of an upper layer, and a conductor 5 for connecting the films 3 and 4 is formed. In this manner, it is not necessary to perform twice the positioning to form a contacting hole and connecting conductor, but may position once for the ion implantation.
摘要翻译：目的：通过在绝缘层和半导体层之间形成的互连线，通过离子注入法同时形成来减少制造半导体器件的步骤数。构成：在半导体衬底1上的包括下线金属膜2的整个表面上形成层间绝缘层3，从与膜2连接的位置注入金属离子，成为上层的导线，形成用于连接薄膜3和4的导体5。以这种方式，不需要执行两次定位以形成接触孔和连接导体，而是可以定位一次用于离子注入。

8. 发明专利

JPS5718336A APPARATUS FOR HOUSING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS5718336A
公开(公告)日：1982-01-30
申请号：JP9347680
申请日：1980-07-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBAYAMA ISAO , HARADA HIROJI
IPC分类号： H01L21/22 , H01L21/673 , H01L21/68
摘要： PURPOSE:To stabilize thermal and chemical natures of a semiconductor substrate housing apparatus means of a protective film provided on the surface of the body thereof made of a heat proofing metal having a section for carrying the substrate. CONSTITUTION:A housing apparatus having a section for carrying a semiconductor substrate such as diffusing boat is made of a heat resisting metal such as stainless steel. Then, the entire surface of the metal is covered with a film having proper thermal and chemical natures, such as Mo silicide and W silicide. This upgrade both thermal and mechanical natures of the apparatus thereby optimizing it for automation work of water processing.

9. 发明专利

JPS5718324A METHOD OF WORKING 失效
公开(公告)号：JPS5718324A
公开(公告)日：1982-01-30
申请号：JP9347380
申请日：1980-07-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KIYUUSAKU , HARADA HIROJI , OOHAYASHI YOSHIKAZU , MASUKO YOUJI , SHIBAYAMA ISAO
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027 , H01L21/30
摘要： PURPOSE:To accomplish fine working without use of a photoresist or an electronic resist by sublimating or evaporating material through a reaction of the material and ion with irradiaton of an accelerated ion beam on a substrate. CONSTITUTION:An oxygen ion beam 4 with an accelerated voltage of 10-30kV is irradiated on a part to be etched away of a molybdenum thin film 3 formed on a subtrate 1 and a molybdenum oxide is formed through a reaction of oxygen ion and molybdenum. The molybdenum oxide thus formed is sublimated away due to a high local temperature caused by the ion beam 4. The use of such beam can improve the accuracy of the working eliminating resists.

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