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1. 发明专利

JPH0318178B2 失效
公开(公告)号：JPH0318178B2
公开(公告)日：1991-03-11
申请号：JP10815583
申请日：1983-06-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI
IPC分类号： G03F7/26 , G03F7/09 , H01L21/027

2. 发明专利

JPH0230181B2 失效
公开(公告)号：JPH0230181B2
公开(公告)日：1990-07-04
申请号：JP16436383
申请日：1983-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , YONEDA MASAHIRO , INUISHI MASAHIDE
IPC分类号： H01L27/00 , H01L21/3213 , H01L21/60

3. 发明专利

JPS6248898B2 失效
公开(公告)号：JPS6248898B2
公开(公告)日：1987-10-16
申请号：JP818381
申请日：1981-01-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , HIRATA KATSUHIRO , KONISHI KANJI
IPC分类号： H01L23/522 , H01L21/28 , H01L21/768

4. 发明专利

JPS6243134A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPS6243134A
公开(公告)日：1987-02-25
申请号：JP18440685
申请日：1985-08-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , NISHIOKA KYUSAKU
IPC分类号： H01L21/205 , H01L21/302 , H01L21/31
摘要： PURPOSE:To perform treating precisely at a high speed, by providing a light source for irradiating light with desired wavelengths onto the sample surface. CONSTITUTION:A light source 6 for irradiating light with desired wavelengths onto the sample surface is provided. By selecting arbitrarily the wavelength of the ray 7 generated from the light source 6, creation of necessary ions in the ion-beam 3 can be promoted, the ions can be activated, the surface treating speed, that is, the etching speed or the forming speed in forming a thin film, can be increased, and only specific ions can be activated, so that the ratio of its etching speed to that of the other members can be increased. Moreover, by irradiating the ray 7 vertically to the surface of the sample 4, a move minute pattern can be attained in the etching and a more uniform film in the depth direction can be anticipated in forming the thin film.

5. 发明专利

JPS61174638A FORMATION FOR ELECTRODE METAL WIRING PATTERN 失效
公开(公告)号：JPS61174638A
公开(公告)日：1986-08-06
申请号：JP1619185
申请日：1985-01-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To contrive to prevent the film thickness of the insulating films on the step difference parts of the side surface parts of the opening part pattern from becoming thinner and to enable to form electrode metal wiring patterns having little disconnection even on the step difference parts by a method wherein the patterns of the insulating films are formed on the side surface parts of the opening part pattern, and afer that, a metal film for electrode wiring is formed on the whole surface. CONSTITUTION:An opening part pattern 2a is formed on an interlayer insulating film 2, such as a silicon oxide film, and after that, an insulating film 6 such as a silicon nitride film is formed on the whole surface. Then, when an etching is performed on the whole surface by a reactive ion etching method, wherein a mixed gas of CF4 gas and H2 gas, for example, is used, the film thickness of insulating films 6, which are formed on the side surfaces of the opening part patterns 2a, is formed thicker compared to that of the insulating film, which nis formed on the flat part of the opening pattern 2a. Therefore, the patterns 6a of the insulating films 6 are formed on the side surfaces of the opening part pattern 2a. Here, as the angles of the upper parts of the patterns 6a on the side surface parts become round, the opening part inlets of the patterns 6a of the insulating films 6 all become a form removed sharpness. After that, when an aluminum film 5, which is the metal film for electrode wiring, is formed on the whole surface, the film thickness of aluminum films 5b on the step difference parts of the opening part pattern does not become thinner and the electrode metal wiring patterns can be formed there, while disconnection is eliminated and the covering property is improved.

6. 发明专利

JPS61127148A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61127148A
公开(公告)日：1986-06-14
申请号：JP24778284
申请日：1984-11-22
申请人： Mitsubishi Electric Corp
发明人： SAKAGAMI KIYOSHI , ITAKURA HIDEAKI , SADAHIRO SHIGEKI , CHIBA AKIRA
IPC分类号： H01L21/768 , H01L21/88
摘要： PURPOSE:To prevent the breaking of the second layer wiring by a method wherein the first interlayer insulating film of almost same thickness as a wiring is provided on the wiring, said insulating film is removed by performing an etching wider than the width of the wiring, and the second interlayer insulating film thinner than the wiring is provided, liquid type glass is coated thereon, and a through hole is provided by performing an etching. CONSTITUTION:An insulating film 4 of almost same thickness as the first layer wiring 3 is formed on the wiring 3, and when the insulating film 4, including a through hole forming region, is removed wider than the wiring 3 by performing an etching, the height of the remaining insulating film 4 becomes almost equal to that of the wiring 3. The upper surface of the film 5 is flattened by the presence of space 12 when the second insulating film 5 is stacked, and a trough 51 is generated at the part adjoining to the wiring 3. The second layer wiring 8 is formed by flattening using liquid glass 6 and by providing a through hole 7 at the prescribed position. According to this constitution, the stepping of the through hole part is reduced in the amount of thickness of the first interlayer insulting film 4, thereby enabling to reduce the breaking of the second layer wiring 8.
摘要翻译：目的：为了通过在布线上设置与布线几乎相同厚度的第一层间绝缘膜的方法来防止第二层布线的断裂，通过进行比布线的宽度更宽的蚀刻来去除绝缘膜，并且设置比布线薄的第二层间绝缘膜，在其上涂覆液体型玻璃，并且通过进行蚀刻来提供通孔。构成：在布线3上形成与第一层布线3几乎相同厚度的绝缘膜4，并且当通过进行蚀刻将包括通孔形成区域的绝缘膜4除去比布线3宽的情况下，剩余绝缘膜4的高度几乎与布线3的高度相同。当层叠第二绝缘膜5时，膜5的上表面由于空间12的存在而变平，并且在该部分产生槽51 与布线3相邻。第二层布线8通过使用液体玻璃6进行平坦化并且在规定位置设置通孔7而形成。根据这种结构，通孔部的步进减少了第一层间绝缘膜4的厚度，从而能够减少第二层布线8的断裂。

7. 发明专利

JPS6193628A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：JPS6193628A
公开(公告)日：1986-05-12
申请号：JP21535784
申请日：1984-10-15
申请人： Mitsubishi Electric Corp
发明人： ITAKURA HIDEAKI
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To obtain a minute pattern having an arbitrary width, based on the length of an excessive etching time, by making the thickness of the second thin film larger than the thickness of the first thin film pattern, and making the width of the minute pattern, which remains at the side end part of the first thin film pattern, larger by the etching of the second thin film. CONSTITUTION:On a substrate 1, a first thin film pattern 2a is formed. Then, a second thin film 5 comprising the second material is formed on the entire surface. A film thickness t4 is made larger than a film thickness t1 of the first thin film pattern 2a. Thereafter, etching is a etching is performed until the surface of the substrate 1 is exposed at a part, where the first thin film pattern 2a is not present, by using reactive ion etching. Then, a minute pattern 5a comprising the second material is formed on the side end surface of the first thin film pattern 2a by the straight advancing effect of the reacting ions. The thickness of the pattern 5a is approximately equal to t1. A width L5 of the minute pattern 5a becomes considerably large. When L5 is excessively larger than required, the etching time is made longer so as to perform excessive etching.
摘要翻译：目的：为了通过使第二薄膜的厚度大于第一薄膜图案的厚度，通过使蚀刻时间过长的长度，获得具有任意宽度的微小图案，并使微细图案的宽度，其保留在第一薄膜图案的侧端部分，通过蚀刻第二薄膜而更大。构成：在基板1上形成第一薄膜图案2a。然后，在整个表面上形成包括第二材料的第二薄膜5。使得膜厚度t4大于第一薄膜图案2a的膜厚度t1。此后，通过使用反应离子蚀刻，进行蚀刻直到基板1的表面在不存在第一薄膜图案2a的部分处露出。然后，通过反应离子的直线前进效应，在第一薄膜图案2a的侧端面上形成包括第二材料的微小图案5a。图案5a的厚度近似等于t1。微小图案5a的宽度L5变得相当大。当L5过大时，蚀刻时间变长，进行过度蚀刻。

8. 发明专利

JPS6184023A Formation of pattern 失效
标题翻译：形成图案
公开(公告)号：JPS6184023A
公开(公告)日：1986-04-28
申请号：JP20503584
申请日：1984-09-29
申请人： Mitsubishi Electric Corp
发明人： ITAKURA HIDEAKI
IPC分类号： H01L21/762 , H01L21/302 , H01L21/3065 , H01L21/316
CPC分类号： H01L21/302
摘要： PURPOSE:To suppress the deviation in thickness at the upper part of a composite film when the third film is left on the side face of a pattern by a method wherein the third film made of the second material is superposed on the composite film pattern, located on the whole surface of a substrate, made of the first and the second materials through the medium of an intermediate thin film made of the material having the etching speed lower than that of the second material. CONSTITUTION:An SiO2 film 2, an Si3N4 film 3 and an intermediate thin film 9 of poly Si formed by performing a chemical vapor deposition (CVD) method are superposed on a substrate 1, and a resist mask 4 is provided. A composite pattern 10 is formed by performing an etching successively. Then, a CVD SiO2 film 6 which is thicker than a pattern 10 is superposed, a reactive ion etching (RIE) is performed using CF4+H2, the surface of the substrate 1 is exposed, and a microscopic pattern 6a is left on the side face of the pattern 10. At this time, a poly Si 9a is hardly etched, and a microscopic side wall can be formed on the side end face of the pattern 10 without having a change in the thickness of an Si3N4 film 3a even when an etching is performed somewhat excessively.
摘要翻译：目的：为了抑制复合薄膜上部的厚度偏差，通过以下方法将第三薄膜留在图案的侧面上，其中由第二材料制成的第三薄膜叠加在复合薄膜图案上，位于在由具有蚀刻速度低于第二材料的蚀刻速度的材料制成的中间薄膜的介质中的由第一和第二材料制成的基板的整个表面上。构成：通过进行化学气相沉积（CVD）方法形成的SiO 2膜2，Si 3 N 4膜3和多晶硅的中间薄膜9叠加在基板1上，并且设置抗蚀剂掩模4。通过连续进行蚀刻来形成复合图案10。然后，将比图案10厚的CVD SiO 2膜6重叠，使用CF4 + H2进行反应离子蚀刻（RIE），使基板1的表面露出，并且将微观图案6a留在侧面此时，多晶Si 9a几乎不被蚀刻，并且即使在Si 3 N 4膜3a的厚度变化的情况下，也可以在图案10的侧端面上形成微小的侧壁，稍微过度地进行蚀刻。

9. 发明专利

JPS6118155A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6118155A
公开(公告)日：1986-01-27
申请号：JP13981884
申请日：1984-07-04
申请人： Mitsubishi Electric Corp
发明人： OGAWA TOSHIAKI , YONEDA MASAHIRO , ITAKURA HIDEAKI , SHIBANO TERUO
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/768
摘要： PURPOSE:To suppress temperature rise at the surface of film to be etched and obtain an insulation film having flat and smooth surface by once suspending the etching during the etching process and then start again the etching after cooling the film to be etched. CONSTITUTION:The reaction ion etching is carried out as indicated by the arrow mark I from above the flat substance layer 4 formed on an insulation film 3 having the stepped portion of surface, but the etching is once stopped in such a step as preceding realization of flattening of surface of the target insulation film 3, and the surface of flat substance layer 4 is cooled by the helium gas which has a high thermal conductivity and ensures high cooling effect as indicated by the waving arrow marks G. Thereafter, etching is started again. The etching stage and cooling stage are repeated as required until final flattening of surface of the insulation film 3 can be realized. Thereby, temperature rise at the surface can be controlled and an insulation film 3 having flat and smooth surface can be obtained.
摘要翻译：目的：为了抑制被蚀刻的膜表面的温度上升，通过在蚀刻工序中一次悬浮蚀刻，得到具有平坦光滑表面的绝缘膜，然后在冷却待蚀刻的膜之后重新开始蚀刻。构成：反应离子蚀刻如箭头标记I所示，从形成在具有台阶部分表面的绝缘膜3上的平坦物质层4上方进行，但是在如先前实现的步骤之前的蚀刻一次停止目标绝缘膜3的表面变平，并且平坦物质层4的表面被具有高导热性的氦气冷却，并确保如挥动箭头标记G所示的高冷却效果。此后，再次开始蚀刻。根据需要重复蚀刻阶段和冷却阶段，直到可以实现绝缘膜3的表面的最终平坦化。由此，能够控制表面的温度上升，能够得到平坦且光滑的表面的绝缘膜3。

10. 发明专利

JPS6083941A INSPECTION OF MASK PATTERN OF MASK FOR X-RAY EXPOSING 失效
公开(公告)号：JPS6083941A
公开(公告)日：1985-05-13
申请号：JP19273483
申请日：1983-10-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBANO TERUO , ITAKURA HIDEAKI
IPC分类号： G03F1/00 , G03F1/84 , G03F1/86 , H01L21/027
摘要： PURPOSE:To inspect easily a mask pattern of a mask for energy rays such as X-ray exposing or the like by projecting the mask patterns by the energy rays on a conversion film and converting the projected image to a photoelectron image by the conversion film. CONSTITUTION:When parallel X-rays 4 are irradiated on a flush type mask pattern 1 for X-ray exposing which is an object to be inspected, the X-ray projected image of the pattern 1 is formed on a thin metallic plate 3. Photoelectrons are released from the X-ray projected image and are converted to the electric signal image of which the X-ray projected image of the mask pattern can be taken out. The mask pattern is thus easily detected by reading electrically and checking the pattern from said electrode or magnifying the electron image by a lens system using a magnetic field and forming the same in an image forming plane.

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