会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20100193850A1
    • 2010-08-05
    • US12697912
    • 2010-02-01
    • Yoshiaki ASAOTakeshi KAJIYAMAMinoru AMANOYoshikuni TATEYAMAAtsushi SHIGETA
    • Yoshiaki ASAOTakeshi KAJIYAMAMinoru AMANOYoshikuni TATEYAMAAtsushi SHIGETA
    • H01L29/82
    • H01L27/228H01L27/105
    • First and second transistors are formed on a substrate. An interlayer insulating film is formed on the first transistor. A first contact is formed in the interlayer film on a source or a drain of the first transistor. A second contact is formed in the interlayer film on the other of the source or the drain. A first interconnect is formed on the first contact. A magnetoresistive element is formed on the second contact. The magnetoresistive element is arranged in a layer having a height equal to that of the first interconnect from a substrate surface. A third contact is formed in the interlayer film on a source or a drain of the second transistor. A second interconnect is formed on the third contact. The second interconnect is arranged in a layer having a height equal to those of the first interconnect and the magnetoresistive element from the substrate surface.
    • 第一和第二晶体管形成在衬底上。 在第一晶体管上形成层间绝缘膜。 在第一晶体管的源极或漏极上的层间膜中形成第一接触。 在源极或漏极中的另一个的层间膜中形成第二接触。 在第一接触件上形成第一互连。 在第二触点上形成磁阻元件。 磁阻元件从衬底表面布置成具有与第一互连的高度相同的高度的层。 在第二晶体管的源极或漏极上的层间膜中形成第三接触。 在第三触点上形成第二互连。 第二互连布置在具有与来自衬底表面的第一互连和磁阻元件的高度相同的高度的层中。
    • 7. 发明申请
    • SUBSTRATE PROCESSING METHOD
    • 基板处理方法
    • US20080254719A1
    • 2008-10-16
    • US12100450
    • 2008-04-10
    • Atsushi SHIGETADai FukushimaHiroyuki Yano
    • Atsushi SHIGETADai FukushimaHiroyuki Yano
    • B24B1/00
    • B24B9/065B24B21/002
    • In a substrate processing method of polishing a periphery of a substrate, in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface. Moreover, in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface.
    • 在对基板的周边进行研磨的基板处理方法中,在将包含对氧化物硅系或氮系硅系列膜具有化学作用的粒子的磨粒作为主要成分的第一研磨面进行研磨的状态下, 已经被固定的部分与半导体衬底的周边接触,通过滑动衬底和第一抛光表面来抛光衬底的周边。 此外,在固定有主要具有机械作用的磨粒的第二研磨面与基板的周边接触的状态下,通过滑动基板和第二研磨面来研磨基板的周围。