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1. 发明授权

US08941197B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08941197B2
公开(公告)日：2015-01-27
申请号：US13370075
申请日：2012-02-09
申请人： Takeshi Kajiyama , Yoshiaki Asao
发明人： Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： H01L27/22 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.
摘要翻译：一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和倪

2. 发明授权

US08592928B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US08592928B2
公开(公告)日：2013-11-26
申请号：US13237586
申请日：2011-09-20
申请人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
发明人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译：根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层，电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

3. 发明申请

US20120068286A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20120068286A1
公开(公告)日：2012-03-22
申请号：US13237586
申请日：2011-09-20
申请人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
发明人： Keiji Hosotani , Hiroyuki Kanaya , Takeshi Kajiyama
IPC分类号： H01L29/82 , H01L21/20
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译：根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层，电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

4. 发明申请

US20110254112A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110254112A1
公开(公告)日：2011-10-20
申请号：US13015410
申请日：2011-01-27
申请人： Takaya YAMANAKA , Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Masayoshi IWAYAMA , Kuniaki SUGIURA , Yukinori KOYAMA
发明人： Takaya YAMANAKA , Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Masayoshi IWAYAMA , Kuniaki SUGIURA , Yukinori KOYAMA
IPC分类号： H01L29/82 , H01L21/4763
CPC分类号： H01L27/228 , H01L21/7684 , H01L43/12
摘要： A semiconductor memory device includes a semiconductor substrate, and plural switching transistors provided on the semiconductor substrate. A contact plug is embedded between the adjacent two switching transistors described above, is insulated from gates of the adjacent two switching transistors, and is electrically connected to diffusion layers of the adjacent two switching transistors. An upper connector is formed on the contact plug, and an upper surface is at a position higher than upper surfaces of the switching transistors. A memory element is provided on the upper surface of the upper connector, and stores data. A wiring is provided on the memory element.
摘要翻译：半导体存储器件包括半导体衬底和设置在半导体衬底上的多个开关晶体管。接触插头嵌入在上述相邻的两个开关晶体管之间，与相邻的两个开关晶体管的栅极绝缘，并且电连接到相邻的两个开关晶体管的扩散层。在接触插塞上形成上连接器，上表面位于高于开关晶体管的上表面的位置。存储元件设置在上连接器的上表面上并存储数据。在存储元件上提供布线。

5. 发明申请

US20110068404A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110068404A1
公开(公告)日：2011-03-24
申请号：US12726300
申请日：2010-03-17
申请人： Kuniaki SUGIURA , Takeshi KAJIYAMA , Yoshiaki ASAO
发明人： Kuniaki SUGIURA , Takeshi KAJIYAMA , Yoshiaki ASAO
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/41791 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： A semiconductor device includes a first semiconductor layer and a second semiconductor layer that have a form of fins and are arranged a predetermined distance apart from each other, in which a center portion of each serves as a channel region, and side portions sandwiching the center portion serve as source/drain regions, a gate electrode formed on two side surfaces of each of the channel regions of the first semiconductor layer and the second semiconductor layer, with a gate insulating film interposed therebetween, an insulating film formed to fill a gap between the source/drain regions of the first semiconductor layer and the source/drain regions of the second semiconductor layer, and silicide layers formed on side surfaces of the source/drain regions of the first semiconductor layer and the source/drain regions of the second semiconductor layer that are not covered by the insulating film.
摘要翻译：半导体器件包括第一半导体层和第二半导体层，该第一半导体层和第二半导体层具有散热片的形式并且彼此隔开预定距离，其中每个半导体层的中心部分用作沟道区域;以及侧部分夹着中心部分作为源极/漏极区域，形成在第一半导体层和第二半导体层的每个沟道区域的两个侧面上的栅电极，隔着栅极绝缘膜，形成为填充第二半导体层之间的间隙的绝缘膜第一半导体层的源极/漏极区域和第二半导体层的源极/漏极区域以及形成在第一半导体层的源极/漏极区域和第二半导体层的源极/漏极区域的侧表面上的硅化物层不被绝缘膜覆盖。

6. 发明申请

US20110012179A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE 有权
标题翻译：磁性随机访问存储器件
公开(公告)号：US20110012179A1
公开(公告)日：2011-01-20
申请号：US12719729
申请日：2010-03-08
申请人： Takeshi KAJIYAMA
发明人： Takeshi KAJIYAMA
IPC分类号： H01L27/115
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , H01L27/0207 , H01L43/08
摘要： An aspect of the present disclosure, there is provided a magnetoresistive random access memory device, including, an active area formed on a semiconductor substrate in a first direction, a magnetoresistive effect element formed on the active area and storing data by a change in resistance value, a gate electrode of a cell transistor formed on each side of the magnetoresistive effect element on the active area in a second direction, a bit line contact formed on the active area and arranged alternately with the magnetoresistive effect element, a first bit line connected to the magnetoresistive effect, and a second bit line connected to the bit line contact.
摘要翻译：本发明的一个方面提供了一种磁阻随机存取存储器件，包括：在第一方向上形成在半导体衬底上的有源区，形成在有源区上的磁阻效应元件，并通过电阻值的变化存储数据形成在有源区域的第二方向上的磁阻效应元件的每一侧上的单元晶体管的栅电极，形成在有源区上并与磁阻效应元件交替布置的位线接触，第一位线连接到磁阻效应，以及与位线接触连接的第二位线。

7. 发明申请

US20100232210A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20100232210A1
公开(公告)日：2010-09-16
申请号：US12723349
申请日：2010-03-12
申请人： Takeshi KAJIYAMA , Yoshiaki ASAO
发明人： Takeshi KAJIYAMA , Yoshiaki ASAO
IPC分类号： G11C11/00 , G11C7/00 , H01L21/8239
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C13/0004 , H01L27/115 , H01L43/08
摘要： A semiconductor memory device includes variable resistance elements arranged in a memory area and configured to store data according to a resistance variation, each of the variable resistance elements having a first terminal electrically connected to a first line and a second terminal electrically connected to a second line, and dummy elements arranged in the memory area, formed of the same material as the variable resistance element and electrically isolated.
摘要翻译：半导体存储器件包括可变电阻元件，其布置在存储区域中并被配置为根据电阻变化存储数据，每个可变电阻元件具有电连接到第一线的第一端子和电连接到第二线路的第二端子，以及布置在存储区域中的虚拟元件，由与可变电阻元件相同的材料形成并电隔离。

8. 发明申请

US20090206426A1 MAGNETORESISTIVE EFFECT ELEMENT 有权
标题翻译：磁感应效应元件
公开(公告)号：US20090206426A1
公开(公告)日：2009-08-20
申请号：US12369555
申请日：2009-02-11
申请人： Takeshi KAJIYAMA
发明人： Takeshi KAJIYAMA
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , H01L27/222
摘要： A magnetoresistive element includes first, second, and third fixed layers, first, second, and third spacer layers, and a free layer. The first fixed layer is made of a ferromagnetic material and having an invariable magnetization direction. The first spacer layer is formed on the first fixed layer and made of an insulator. The free layer is formed on the first spacer layer, made of a ferromagnetic material, and having a variable magnetization direction. The second spacer layer is formed on the free layer and made of a nonmagnetic material. The second fixed layer is formed on the second spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction. The third spacer layer is formed below the first fixed layer and made of a nonmagnetic material. The third fixed layer is formed below the third spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction.
摘要翻译：磁阻元件包括第一，第二和第三固定层，第一，第二和第三间隔层，以及自由层。第一固定层由铁磁材料制成并且具有不变的磁化方向。第一间隔层形成在第一固定层上并由绝缘体制成。自由层形成在第一间隔层上，由铁磁材料制成，具有可变的磁化方向。第二间隔层形成在自由层上并由非磁性材料制成。第二固定层形成在第二间隔层上，由铁磁材料制成，具有不变的磁化方向。第三间隔层形成在第一固定层下方并由非磁性材料制成。第三固定层形成在第三间隔层的下方，由铁磁材料制成，具有不变的磁化方向。

9. 发明授权

US07564109B2 MRAM and method of manufacturing the same 失效
标题翻译： MRAM及其制造方法
公开(公告)号：US07564109B2
公开(公告)日：2009-07-21
申请号：US10917300
申请日：2004-08-13
申请人： Takeshi Kajiyama , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Masatoshi Yoshikawa
发明人： Takeshi Kajiyama , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Masatoshi Yoshikawa
IPC分类号： G11C11/00 , G11C11/14 , H01L21/8246
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.
摘要翻译：磁存储器件包括：第一写入布线，其包括形成在绝缘层中的沟槽中的布线层;掩埋在布线层上的沟槽中的阻挡金属层。并且该器件包括设置在第一写入布线上的磁阻效应元件。

10. 发明授权

US07262449B2 MTJ element for magnetic random access memory 有权
标题翻译：用于磁随机存取存储器的MTJ元件
公开(公告)号：US07262449B2
公开(公告)日：2007-08-28
申请号：US10847362
申请日：2004-05-18
申请人： Takeshi Kajiyama
发明人： Takeshi Kajiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08 , H01L43/12
摘要： A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magnetization state varies in accordance with write data, a non-magnetic layer which is arranged between the first magnetic layer and the second magnetic layer, and a third magnetic layer which surrounds the second magnetic layer.
摘要翻译：根据本发明的一个方面的磁性随机存取存储器包括其中固定有磁化状态的第一磁性层，具有与第一磁性层的形状不同的磁化状态变化的第二磁性层根据写入数据，布置在第一磁性层和第二磁性层之间的非磁性层和围绕第二磁性层的第三磁性层。

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