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1. 发明授权

US4852133A X-ray lithography apparatus 失效
标题翻译： X射线光刻设备
公开(公告)号：US4852133A
公开(公告)日：1989-07-25
申请号：US117499
申请日：1987-11-06
申请人： Minoru Ikeda , Ryuichi Funatsu , Yukio Kembo , Motoya Taniguchi
发明人： Minoru Ikeda , Ryuichi Funatsu , Yukio Kembo , Motoya Taniguchi
IPC分类号： H01L21/027 , G03F7/20 , H01L21/30
CPC分类号： G03F7/70866 , G03F7/70875 , G03F7/70933
摘要： An X-ray lithography apparatus for transferring a pattern formed in a mask onto a wafer by using a soft X-ray. The apparatus comprises a soft X-ray generating unit, a gas chamber connected to an X-ray exit window of the soft X-ray generating unit and filled with a gaseous medium having a high transmittivity to the X-ray, the mask being mounted within the gas chamber, a stage for positioning the wafer in opposition to the mask with a small gap therebetween, detecting optics disposed within the gas chamber for optically picking up image of alignment patterns of the mask and wafer, an imager disposed within the gas chamber for converting the image of the alignment pattern picked up by the detecting optics into a video signal, a discharging port for withdrawing from the gas chamber the gaseous medium present in the vicinity of the imager, a combination of a blower and a heat exchanged for cooling and circulating the gaseous medium withdrawn through the gas discharging port, and a charging port for feeding back to the gas chamber the gaseous medium conditioned and circulated by the blower and the heat exchanger. The discharge port, blower and heat exchanger and the charging port cooperate to prevent the temperature of the gaseous medium within the gas chamber from being increased due to heat generated by the imager means to thereby suppress drift phenomenon in the detecting optics.
摘要翻译：一种X射线光刻设备，用于通过使用软X射线将形成在掩模中的图案转印到晶片上。该装置包括软X射线产生单元，连接到软X射线产生单元的X射线出射窗的气室，并且填充有对X射线具有高透射率的气体介质，所述掩模被安装在气室内设有用于将晶片定位成与掩模相对的掩模的台阶，其间检测设置在气室内的光学拾取掩模和晶片的对准图案的图像;设置在气室内的成像器用于将由检测光学元件拾取的对准图案的图像转换为视频信号;排出口，用于从气室中取出存在于成像器附近的气态介质，鼓风机和换热器的组合并且循环通过气体排出口排出的气体介质，以及用于将由鼓风机调节和循环的气体介质反馈给气室的充气口，在交换器。排气口，鼓风机和热交换器以及充气口配合，以防止气体室内气态介质的温度由于成像器装置产生的热量而增加，从而抑制检测光学元件中的漂移现象。

2. 发明授权

US4666291A Light-exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4666291A
公开(公告)日：1987-05-19
申请号：US852729
申请日：1986-04-16
申请人： Motoya Taniguchi , Asahiro Kuni , Ryuichi Funatsu , Yukio Kembo , Akira Inagaki
发明人： Motoya Taniguchi , Asahiro Kuni , Ryuichi Funatsu , Yukio Kembo , Akira Inagaki
IPC分类号： H01L51/00 , G03F7/20 , G03F9/00 , G03B27/68
CPC分类号： G03F9/7053 , G03F7/703 , G03F7/707
摘要： A light-exposure apparatus which can keep uniform the gap between a mask and a wafer and reduce the density of arrangement of vertical movers adapted to deform the wafer to thereby reduce cost and weight of the apparatus. The apparatus has a thin plate deforming mechanism comprising a chuck platen for holding on its top surface the wafer, the bottom surface of the chuck platen being formed with imperforate slits patterned in the form of a grid composed of a plurality of triangular meshes so that the chuck platen may be deformed along bending lines near the triangular meshes, and a plurality of vertical movers for vertically deforming the individual triangular meshes so as to flatten or deform into a desired shape the wafer.
摘要翻译：能够使掩模和晶片之间的间隙保持均匀并且减小适于使晶片变形的垂直移动器的布置密度，从而降低装置的成本和重量的曝光装置。该装置具有薄板变形机构，其包括用于在其顶表面上保持晶片的卡盘台板，卡盘台板的底表面形成为由多个三角形网格构成的网格形式的无孔狭缝，使得卡盘台板可以沿着三角形网格附近的弯曲线变形，并且多个垂直移动器用于使各个三角形网格垂直变形，以使其平坦化或变形成所需形状的晶片。

3. 发明授权

US4777641A Method and apparatus for alignment 失效
标题翻译：对准方法和装置
公开(公告)号：US4777641A
公开(公告)日：1988-10-11
申请号：US918004
申请日：1986-10-14
申请人： Akira Inagaki , Yukio Kembo , Ryuichi Funatsu , Asahiro Kuni , Keiichi Okamoto , Yoshihiro Komeyama
发明人： Akira Inagaki , Yukio Kembo , Ryuichi Funatsu , Asahiro Kuni , Keiichi Okamoto , Yoshihiro Komeyama
IPC分类号： G02B7/00 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/67 , H01L21/68 , G21K5/00
CPC分类号： G03F9/70
摘要： A method and apparatus for alignment for use in X-ray exposure or the like wherein a mask is provided having a formation of an alignment pattern made up of at least one linear segment formed in a peripheral section of the mask and a wafer is provided having a formation of an alignment pattern formed in a same direction as the alignment pattern of the mask and made up of linear segments. An illuminating arrangement illuminates a light to the mask alignment pattern along a direction inclined to the alignment direction and the mask alignment pattern and the wafer alignment pattern are imaged and transformed into a video signal. An A/D converts the video signal into a digital signal and stores the digital signal in a memory. The digital video signal is read out from the memory and averaged in a mask alignment pattern by removing a shadow portion caused by the mask alignment pattern and additionally averaged in a wafer alignment pattern area with an averaged wafer alignment pattern signal and an averaged wafer alignment pattern signal being provided. Relative displacement between the mask and the wafer is detected from the averaged mask alignment pattern signal and the averaged wafer alignment pattern signal and the mask and wafer are aligned by moving at least one of the mask and wafer so that displacement between the mask and the wafer does not exist.
摘要翻译：一种用于X射线曝光等的对准用的方法和装置，其中提供具有由形成在掩模的周边部分中的至少一个线性部分构成的取向图案的掩模和晶片，其具有：形成与由掩模的对准图形相同的方向形成并由直线段构成的对准图案。照明装置沿着对准方向倾斜的方向照射到掩模对准图案，并且将掩模对准图案和晶片对准图案成像并变换为视频信号。 A / D将视频信号转换为数字信号，并将数字信号存储在存储器中。从存储器中读出数字视频信号，并通过去除由掩模对准图形引起的阴影部分并以平均的晶片对准图案信号和平均的晶片对准图案在晶片对准图案区域中平均化，以掩模对准图案平均化提供信号。从平均的掩模对准图案信号中检测掩模和晶片之间的相对位移，并且通过移动掩模和晶片中的至少一个来对准平均的晶片对准图案信号并且掩模和晶片，使得掩模和晶片之间的位移不存在。

4. 发明授权

US5121449A Information detecting system of scanning type 失效
标题翻译：扫描型信息检测系统
公开(公告)号：US5121449A
公开(公告)日：1992-06-09
申请号：US513911
申请日：1990-04-24
申请人： Masataka Shiba , Ryuichi Funatsu , Motoya Taniguchi , Minoru Tanaka , Akira Inagaki
发明人： Masataka Shiba , Ryuichi Funatsu , Motoya Taniguchi , Minoru Tanaka , Akira Inagaki
IPC分类号： G02F1/335 , G02B6/12 , G11B7/12
CPC分类号： G02B6/12004 , G11B7/1245
摘要： Disclosed is an information detecting system of scanning type which comprises a substrate formed with an optical waveguide layer, a laser oscillator emitting a laser beam, a SAW type beam deflecting device formed on the optical waveguide layer, a beam irradiating section irradiating a specimen with the laser beam derived from the optical waveguide layer, a controller controlling the frequency of a high-frequency voltage applied to the SAW type beam deflecting device so as to scan the specimen with the laser beam directed from the beam irradiating section, and a detecting section detecting the position and/or the intensity of the laser beam scanning the specimen with respect to the SAW control signal controlled by the controller.
摘要翻译：公开了一种扫描型信息检测系统，其包括形成有光波导层的基板，发射激光束的激光振荡器，形成在光波导层上的SAW型光束偏转装置，用该光波导层照射试样的光束照射部衍生自光波导层的激光束，控制施加到SAW型光束偏转装置的高频电压的频率的控制器，以便用从光束照射部分引导的激光束扫描样本;以及检测部分检测相对于由控制器控制的SAW控制信号扫描样本的激光束的位置和/或强度。

5. 发明授权

US07271385B2 Inspection method and inspection apparatus using electron beam 失效
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US07271385B2
公开(公告)日：2007-09-18
申请号：US11234313
申请日：2005-09-26
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G01R31/302
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

6. 发明授权

US07071468B2 Circuit pattern inspection method and its apparatus 失效
标题翻译：电路图形检测方法及其装置
公开(公告)号：US07071468B2
公开(公告)日：2006-07-04
申请号：US10957748
申请日：2004-10-05
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N21/00
CPC分类号： G01N23/2251 , G01N21/95607 , H01J2237/2817
摘要： A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
摘要翻译：可以在确认在检查缺陷时检测到的缺陷能够容易地设定最佳阈值的电路图案检查方法和装置，并且能够容易地形成配方。将电子束照射到其表面上形成有电路图案的试样的电路图案检查，根据来自试样的反射电子的二次电子形成检查图像和参考图像，并从检查图像与参考图像之间的差异，其中从异常部分的图像获得异常部分的多个特征量，并且通过改变为特征量虚拟设置的检查阈值来选择性地显示异常部分。

7. 发明申请

US20050194536A1 Charged particle beam apparatus 审中-公开
标题翻译：带电粒子束装置
公开(公告)号：US20050194536A1
公开(公告)日：2005-09-08
申请号：US11103526
申请日：2005-04-12
申请人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
发明人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
IPC分类号： G01N23/225 , H01J37/28 , H01J37/08 , G21K5/10
CPC分类号： H01J37/261 , G01N23/225 , H01J37/28 , H01J2237/2817
摘要： The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.
摘要翻译：本发明的目的是通过电路图形检查装置快速且精确地发送已经指定的缺陷的位置信息，使得位置信息在另一装置中被有效地使用。通过使用检查装置的带电粒子束照射机构在缺陷的周边区域进行标记。该标记实现与另一装置共享缺陷位置信息。标记技术包括通过照射带电粒子束沉积沉积物并充电。检查装置中的标记允许将缺陷位置信息更正确且容易地传送到另一装置，结果提高了分析精度，缩短了分析时间。

8. 发明申请

US20090045338A1 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US20090045338A1
公开(公告)日：2009-02-19
申请号：US12222606
申请日：2008-08-12
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

9. 发明授权

US07425704B2 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US07425704B2
公开(公告)日：2008-09-16
申请号：US11354247
申请日：2006-02-15
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N13/16
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

10. 发明申请

US20060192117A1 Inspection method and apparatus using an electron beam 失效
公开(公告)号：US20060192117A1
公开(公告)日：2006-08-31
申请号：US11354247
申请日：2006-02-15
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.

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