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1. 发明授权

US07271385B2 Inspection method and inspection apparatus using electron beam 失效
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US07271385B2
公开(公告)日：2007-09-18
申请号：US11234313
申请日：2005-09-26
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G01R31/302
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

2. 发明申请

US20050040331A1 Inspection method and inspection apparatus using electron beam 审中-公开
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US20050040331A1
公开(公告)日：2005-02-24
申请号：US10942941
申请日：2004-09-17
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G01R31/302 , H01J37/22 , H01J37/28 , H01L21/66 , G01N23/00
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

3. 发明申请

US20060076490A1 Inspection method and inspection apparatus using electron beam 失效
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US20060076490A1
公开(公告)日：2006-04-13
申请号：US11234313
申请日：2005-09-26
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G21K7/00
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

4. 发明授权

US07071468B2 Circuit pattern inspection method and its apparatus 失效
标题翻译：电路图形检测方法及其装置
公开(公告)号：US07071468B2
公开(公告)日：2006-07-04
申请号：US10957748
申请日：2004-10-05
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N21/00
CPC分类号： G01N23/2251 , G01N21/95607 , H01J2237/2817
摘要： A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
摘要翻译：可以在确认在检查缺陷时检测到的缺陷能够容易地设定最佳阈值的电路图案检查方法和装置，并且能够容易地形成配方。将电子束照射到其表面上形成有电路图案的试样的电路图案检查，根据来自试样的反射电子的二次电子形成检查图像和参考图像，并从检查图像与参考图像之间的差异，其中从异常部分的图像获得异常部分的多个特征量，并且通过改变为特征量虚拟设置的检查阈值来选择性地显示异常部分。

5. 发明申请

US20090045338A1 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US20090045338A1
公开(公告)日：2009-02-19
申请号：US12222606
申请日：2008-08-12
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

6. 发明授权

US07425704B2 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US07425704B2
公开(公告)日：2008-09-16
申请号：US11354247
申请日：2006-02-15
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N13/16
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

7. 发明申请

US20060192117A1 Inspection method and apparatus using an electron beam 失效
公开(公告)号：US20060192117A1
公开(公告)日：2006-08-31
申请号：US11354247
申请日：2006-02-15
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.

8. 发明申请

US20050109938A1 Circuit pattern inspection method and its apparatus 失效
标题翻译：电路图形检测方法及其装置
公开(公告)号：US20050109938A1
公开(公告)日：2005-05-26
申请号：US10957748
申请日：2004-10-05
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01B15/04 , G01B15/08 , G01N21/956 , G01N23/225 , H01L21/66 , G01N21/00
CPC分类号： G01N23/2251 , G01N21/95607 , H01J2237/2817
摘要： A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
摘要翻译：可以在确认在检查缺陷时检测到的缺陷能够容易地设定最佳阈值的电路图案检查方法和装置，并且能够容易地形成配方。将电子束照射到其表面上形成有电路图案的试样的电路图案检查，根据来自试样的反射电子的二次电子形成检查图像和参考图像，并从检查图像与参考图像之间的差异，其中从异常部分的图像获得异常部分的多个特征量，并且通过改变为特征量虚拟设置的检查阈值来选择性地显示异常部分。

9. 发明授权

US07855363B2 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US07855363B2
公开(公告)日：2010-12-21
申请号：US12222606
申请日：2008-08-12
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N23/225
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

10. 发明授权

US07034298B2 Inspection method and apparatus using an electron beam 失效
公开(公告)号：US07034298B2
公开(公告)日：2006-04-25
申请号：US10669253
申请日：2003-09-25
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N13/16 , G06K9/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.

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